IPB600N25N3 G [INFINEON]

英飞凌 250V OptiMOS™ 产品采用性能先进标杆技术，完全适合在 48V 系统、直流-直流转换器、不间断电源 (UPS) 和直流电机驱动逆变器中用于异步整流。;


型号：	IPB600N25N3 G
厂家：	Infineon
描述：	英飞凌 250V OptiMOS™ 产品采用性能先进标杆技术，完全适合在 48V 系统、直流-直流转换器、不间断电源 (UPS) 和直流电机驱动逆变器中用于异步整流。电机驱动转换器
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中文：	中文翻译
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IPB600N25N3 G IPP600N25N3 G

IPI600N25N3 G

OptiMOS^TM3 Power-Transistor

Product Summary

Features

V_DS

250

• N-channel, normal level

R_DS(on),max

I_D

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target application

• Halogen-free according to IEC61249-2-21

• Ideal for high-frequency switching and synchronous rectification

Type

IPB600N25N3 G

IPP600N25N3 G

IPI600N25N3 G

Package

Marking

PG-TO263-3

600N25N

PG-TO220-3

600N25N

PG-TO262-3

600N25N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

Continuous drain current

Pulsed drain current²⁾

I _D,pulse

E _AS

100

210

I _D=25 A, R _GS=25 W

Avalanche energy, single pulse

Reverse diode dv /dt

dv /dt

kV/µs

V _GS

Gate source voltage

±20

P _tot

T _C=25 °C

Power dissipation

136

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾J-STD20 and JESD22

²⁾See figure 3

Rev. 2.3

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2011-07-14

IPB600N25N3 G IPP600N25N3 G

IPI600N25N3 G

Values

typ.

Parameter

Symbol Conditions

Unit

min.

max.

Thermal characteristics

R _thJC

Thermal resistance, junction - case

1.1

K/W

R _thJA

minimal footprint

Thermal resistance, junction -

ambient

6 cm2 cooling area³⁾

Electrical characteristics, at T _j=25 °C, unless otherwise specified

Static characteristics

V _(BR)DSSV _GS=0 V, I _D=1 mA

V _GS(th)V _DS=V _GS, I _D=90 µA

Drain-source breakdown voltage

Gate threshold voltage

250

V _DS=200 V, V _GS=0 V,

T _j=25 °C

I _DSS

Zero gate voltage drain current

0.1

µA

V _DS=200 V, V _GS=0 V,

T _j=125 °C

100

I _GSS

V _GS=20 V, V _DS=0 V

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

100 nA

R _DS(on)V _GS=10 V, I _D=25 A

2.5

R _G

|V _DS|>2|I _D|R _DS(on)max

I _D=25 A

g _fs

Transconductance

³⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm²(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 2.3

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2011-07-14

IPB600N25N3 G IPP600N25N3 G

IPI600N25N3 G

Values

typ.

Parameter

Symbol Conditions

Unit

min.

max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C _iss

1770

112

2350 pF

V _GS=0 V, V _DS=100 V,

f =1 MHz

C _oss

C _rss

t _d(on)

t _r

149

V _DD=100 V,

V _GS=10 V, I _D=12 A,

R _G=1.6 W

t _d(off)

t _f

Turn-off delay time

Fall time

Gate Charge Characteristics⁴⁾

Gate to source charge

Gate to drain charge

Switching charge

Q _gs

Q _gd

V _DD=100 V, I _D=12 A,

V _GS=0 to 10 V

Q _sw

Q _g

Gate charge total

4.3

V _plateau

Q _oss

Gate plateau voltage

Output charge

V _DD=100 V, V _GS=0 V

Reverse Diode

I _S

Diode continous forward current

Diode pulse current

T _C=25 °C

I _S,pulse

100

V _GS=0 V, I _F=25 A,

T _j=25 °C

V _SD

Diode forward voltage

1.2

t _rr

Reverse recovery time

127

604

V _R=100 V, I _F=12A ,

di _F/dt =100 A/µs

Q _rr

Reverse recovery charge

⁴⁾See figure 16 for gate charge parameter definition

Rev. 2.3

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2011-07-14

IPB600N25N3 G IPP600N25N3 G

IPI600N25N3 G

1 Power dissipation

2 Drain current

P _tot=f(T _C)

I _D=f(T _C); V _GS≥10 V

160

140

120

100

150

200

100

150

200

T_C[°C]

3 Safe operating area

I _D=f(V _DS); T _C=25 °C; D =0

parameter: t _p

4 Max. transient thermal impedance

Z _thJC=f(t _p)

parameter: D =t _p/T

10³

10²

10¹

10⁰

10^-1

1 µs

10⁰

10 µs

100 µs

0.5

0.2

0.1

1 ms

10^-1

10 ms

0.05

0.02

0.01

single pulse

10^-2

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10^-1

10⁰

10¹

10²

10³

t_p[s]

V_DS[V]

Rev. 2.3

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2011-07-14

IPB600N25N3 G IPP600N25N3 G

IPI600N25N3 G

5 Typ. output characteristics

I _D=f(V _DS); T _j=25 °C

6 Typ. drain-source on resistance

R _DS(on)=f(I _D); T _j=25 °C

parameter: V _GS

100

10 V

7 V

5 V

4.5 V

5 V

7 V

10 V

4.5 V

V_DS[V]

I_D[A]

7 Typ. transfer characteristics

I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max

parameter: T _j

8 Typ. forward transconductance

g _fs=f(I _D); T _j=25 °C

175 °C

25 °C

V_GS[V]

I_D[A]

Rev. 2.3

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2011-07-14

IPB600N25N3 G IPP600N25N3 G

IPI600N25N3 G

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

R _DS(on)=f(T _j); I _D=25 A; V _GS=10 V

V _GS(th)=f(T _j); V _GS=V _DS

parameter: I _D

200

180

160

140

120

100

3.5

900 µA

90 µA

2.5

98%

1.5

typ

0.5

-60

-20

100

140

180

-60

-20

T_j[°C]

100

140

180

T_j[°C]

11 Typ. capacitances

12 Forward characteristics of reverse diode

I _F=f(V _SD

C =f(V _DS); V _GS=0 V; f =1 MHz

)

parameter: T _j

10⁴

10³

Ciss

10³

10²

Coss

25 °C

10²

175 °C

10¹

25°C, 98%

Crss

10¹

175°C, 98%

10⁰

0.5

1.5

120

160

V_SD[V]

V_DS[V]

Rev. 2.3

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2011-07-14

IPB600N25N3 G IPP600N25N3 G

IPI600N25N3 G

13 Avalanche characteristics

14 Typ. gate charge

V _GS=f(Q _gate); I _D=12 A pulsed

parameter: V _DD

I _AS=f(t _AV); R _GS=25 W

parameter: T _j(start)

100

200 V

125 V

25 °C

100 °C

50 V

125 °C

100

1000

t_AV[µs]

Q_gate[nC]

15 Drain-source breakdown voltage

16 Gate charge waveforms

V _BR(DSS)=f(T _j); I _D=1 mA

290

280

270

260

250

240

230

220

V _GS

Q_g

V _gs(th)

Q_g(th)

Q_sw

Q_gd

Q_gate

Q_gs

-60

-20

100

140

180

T_j[°C]

Rev. 2.3

page 7

2011-07-14

IPB600N25N3 G IPP600N25N3 G

IPI600N25N3 G

PG-TO220-3: Outline

Rev. 2.3

page 8

2011-07-14

IPB600N25N3 G IPP600N25N3 G

IPI600N25N3 G

PG-TO263-3: Outline

Rev. 2.3

page 9

2011-07-14

IPB600N25N3 G IPP600N25N3 G

IPI600N25N3 G

PG-TO262-3: Outline

Rev. 2.3

page 10

2011-07-14

IPB600N25N3 G IPP600N25N3 G

IPI600N25N3 G

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of

conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

Rev. 2.3

page 11

2011-07-14

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