IPB60R385CP [INFINEON]
CoolMOSTM Power Transistor; CoolMOSTM功率晶体管
| 型号： | IPB60R385CP |
| 厂家： | 
Infineon |
| 描述： | CoolMOSTM Power Transistor |
| 文件： | 总10页 (文件大小：352K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB60R385CP
CoolMOSTM Power Transistor
Features
Product Summary
DS @ Tj,max
R DS(on),max
Q g,typ
V
650
0.385
17
V
• Lowest figure-of-merit RON x Qg
• Ultra low gate charge
Ω
nC
• High peak current capability
• Qualified according to JEDEC1) for target applications
PG-TO263
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Type
IPB60R385CP
Package
PG-TO263
Ordering Code
SP000228365 6R385P
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
T C=100 °C
T C=25 °C
9.0
5.7
Continuous drain current
A
Pulsed drain current2)
27
I D,pulse
E AS
I D=3.4 A, V DD=50 V
I D=3.4 A, V DD=50 V
Avalanche energy, single pulse
Avalanche energy, repetitive t AR
227
0.3
mJ
2),3)
2),3)
E AR
I AR
3
A
Avalanche current, repetitive t AR
MOSFET dv /dt ruggedness
Gate source voltage
V
DS=0...480 V
50
dv /dt
V GS
V/ns
V
±20
±30
83
static
AC (f >1 Hz)
T C=25 °C
P tot
Power dissipation
W
T j, T stg
-55 ... 150
Operating and storage temperature
°C
Rev. 2.0
page 1
2006-06-06
IPB60R385CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
5.2
Parameter
Symbol Conditions
Unit
I S
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
A
T C=25 °C
I S,pulse
27
dv /dt
15
V/ns
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
1.5
62
K/W
SMD version, device
R thJA
on PCB, minimal
footprint
Thermal resistance, junction -
ambient
SMD version, device
on PCB, 6 cm2 cooling
area5)
-
-
35
-
-
Soldering temperature,
wave- & reflowsolderin allowed
T sold
reflow MSL 1
260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=250 µA
DS=V GS, I D=0.34 mA
Drain-source breakdown voltage
Gate threshold voltage
600
2.5
-
-
V
3
3.5
V
DS=600 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
1
-
µA
T j=25 °C
V
DS=600 V, V GS=0 V,
-
-
-
10
-
T j=150 °C
I GSS
V
V
GS=20 V, V DS=0 V
GS=10 V, I D=5.2 A,
Gate-source leakage current
100 nA
R DS(on)
Drain-source on-state resistance
0.35
0.385
Ω
T j=25 °C
V
GS=10 V, I D=5.2 A,
-
-
0.94
1.8
-
T j=150 °C
R G
Gate resistance
f =1 MHz, open drain
-
Ω
Rev. 2.0
page 2
2006-06-06
IPB60R385CP
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
-
-
790
38
-
-
pF
V
GS=0 V, V DS=100 V,
f =1 MHz
C oss
Effective output capacitance, energy
related6)
C o(er)
-
-
36
96
-
-
V
GS=0 V, V DS=0 V
to 480 V
Effective output capacitance, time
related7)
C o(tr)
t d(on)
t r
t d(off)
t f
Turn-on delay time
Rise time
-
-
-
-
10
5
-
-
-
-
ns
V
V
DD=400 V,
GS=10 V, I D=5.2 A,
Turn-off delay time
Fall time
40
5
R G=3.3 Ω
Gate Charge Characteristics
Gate to source charge
Q gs
-
-
-
-
4
6
-
-
nC
Q gd
Gate to drain charge
Gate charge total
V
V
DD=400 V, I D=5.2 A,
GS=0 to 10 V
Q g
17
5.0
22
-
V plateau
Gate plateau voltage
V
V
Reverse Diode
V
GS=0 V, I F=5.2 A,
V SD
Diode forward voltage
-
0.9
1.2
T j=25 °C
t rr
Reverse recovery time
-
-
-
260
3.1
24
-
-
-
ns
µC
A
V R=400 V, I F=I S,
di F/dt =100 A/µs
Q rr
I rrm
Reverse recovery charge
Peak reverse recovery current
1) J-STD20 and JESD22
2) Pulse width t p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
4) ISD≤ID, di/dt≤400A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
2
5) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for drain connection. PCB
is vertical without blown air
6) C o(er) is a fixed capacitance that gives the same stored energy asC oss while V DS is rising from 0 to 80% V DSS.
7) C o(tr) is a fixed capacitance that gives the same charging time asC oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.0
page 3
2006-06-06
IPB60R385CP
1 Power dissipation
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
P
tot=f(T C)
102
100
limited by on-state
resistance
80
60
40
20
1 µs
10 µs
101
100 µs
1 ms
DC
100
10 ms
10-1
0
0
100
101
102
103
40
80
120
160
T
C [°C]
V
DS [V]
3 Max. transient thermal impedance
thJC=f(t P)
4 Typ. output characteristics
I D=f(V DS); T j=25 °C
Z
parameter: D=t p/T
parameter: V GS
101
25
20 V
8 V
7 V
10 V
20
100
6 V
0.5
15
10
5
0.2
0.1
5.5 V
0.05
10-1
0.02
0.01
5 V
single pulse
4.5 V
10-2
0
10-5
10-4
10-3
10-2
10-1
100
0
5
10
DS [V]
15
20
t
p [s]
V
Rev. 2.0
page 4
2006-06-06
IPB60R385CP
6 Typ. drain-source on-state resistance
DS(on)=f(I D); T j=150 °C
5 Typ. output characteristics
I D=f(V DS); T j=150 °C
parameter: V GS
R
parameter: V GS
16
14
12
10
8
1.6
8 V
7 V
6 V
6.5 V
7 V
10 V
5 V
5.5 V
6 V
20 V
1.2
0.8
0.4
20 V
5.5 V
5 V
6
4.5 V
4
2
0
0
0
0
5
10
15
20
5
10
15
20
I
D [A]
V
DS [V]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
R
DS(on)=f(T j); I D=5.2 A; V GS=10 V
1.2
1
40
36
32
28
24
20
16
12
8
C °25
0.8
0.6
C °150
98 %
typ
0.4
0.2
0
4
0
-60
-20
20
60
100
140
180
0
2
4
6
8
10
T j [°C]
V GS [V]
Rev. 2.0
page 5
2006-06-06
IPB60R385CP
9 Typ. gate charge
GS=f(Q gate); I D=5.2 A pulsed
10 Forward characteristics of reverse diode
I F=f(V SD
V
)
parameter: V DD
parameter: T j
102
10
9
8
7
6
5
4
3
2
1
120 V
400 V
150 °C, 98%
25 °C
150 °C
101
100
25 °C, 98%
10-1
0
0
0
0.5
1
1.5
2
5
10
15
20
Q
gate [nC]
V
SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E
AS=f(T j); I D=3.4 A; V DD=50 V
V
BR(DSS)=f(T j); I D=0.25 mA
700
250
200
150
100
50
660
620
580
540
0
-60
-20
20
60
100
140
180
20
60
100
140
180
T j [°C]
T j [°C]
Rev. 2.0
page 6
2006-06-06
IPB60R385CP
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
105
104
6
4
2
Ciss
103
102
Coss
101
Crss
100
0
0
0
100
200
300
DS [V]
400
500
100
200
300
400
500
600
V
V
DS [V]
Rev. 2.0
page 7
2006-06-06
IPB60R385CP
Definition of diode switching characteristics
Rev. 2.0
page 8
2006-06-06
IPB60R385CP
PG-TO263-3-2/TO263-3-5/TO263-3-22: Outlines
Rev. 2.0
page 9
2006-06-06
IPB60R385CP
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristcs.
Terms of delivery and rights to technical change reserved.
We hereby disclaims any and all warranties, including but not limited to warranties of non-infringement
regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your neares
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies Office
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Rev. 2.0
page 10
2006-06-06
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