IPB65R110CFD [INFINEON]
650V CoolMOS™ CFD2 替代产品是600V CoolMOS™ CFD7;
| 型号： | IPB65R110CFD |
| 厂家： | 
Infineon |
| 描述： | 650V CoolMOS™ CFD2 替代产品是600V CoolMOS™ CFD7 开关 脉冲 晶体管 功率场效应晶体管 |
| 文件： | 总20页 (文件大小：3859K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ CFD2 650V
650V CoolMOS™ CFD2 Power Transistor
IPx65R110CFD
Data Sheet
Rev. 2.6
Final
Industrial & Multimarket
650V CoolMOS™ CFD2 Power Transistor
IPW65R110CFD, IPB65R110CFD, IPP65R110CFD
IPA65R110CFD, IPI65R110CFD
TO-247
D²PAK
TO-220
1
Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle and
pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series
combines the experience of the leading SJ MOSFET supplier with high
class innovation. The resulting devices provide all benefits of a fast
switching SJ MOSFET while offering an extremely fast and robust body
diode. This combination of extremely low switching, commutation and
conduction losses together with highest robustness make especially
resonant switching applications more reliable, more efficient, lighter and
cooler
TO-220 FP
I²PAK
drain
pin 2
Features
• Ultra-fast body diode
gate
pin 1
• Very high commutation ruggedness
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Easy to use/drive
• Qualified for industrial grade applications according to JEDEC
(J-STD20 and JESD22)
source
pin 3
• Pb-free plating, Halogen free mold compound
Applications
650V CoolMOS™ CFD2 is especially suitable for resonant switching PWM
stages for e.g. PC Silverbox, LCD TV, Lighting, Server,Telecom and Solar.
Table 1 Key Performance Parameters
Parameter
V‡» @ TÎ ÑÈà
RDS(on),max
Qg,typ
Value
700
0.11
118
99.6
9.2
Unit
V
Â
nC
A
ID,pulse
Eoss @ 400V
Body diode di/dt
Qrr
µJ
A/µs
µC
ns
A
900
0.8
trr
150
8.3
Irrm
Type / Ordering Code
IPW65R110CFD
IPB65R110CFD
IPP65R110CFD
IPA65R110CFD
IPI65R110CFD
Package
Marking
65F6110
Related Links
PG-TO 247
PG-TO 263
PG-TO 220
see Appendix A
PG-TO 220 FullPAK
PG-TO 262
Final Data Sheet
Rev. 2.6, 2011-09-26
2
650V CoolMOS™ CFD2 Power Transistor
IPW65R110CFD, IPB65R110CFD, IPP65R110CFD
IPA65R110CFD, IPI65R110CFD
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Final Data Sheet
Rev. 2.6, 2011-09-26
3
650V CoolMOS™ CFD2 Power Transistor
IPW65R110CFD, IPB65R110CFD, IPP65R110CFD
IPA65R110CFD, IPI65R110CFD
2
Maximum ratings
at TÎ = 25°C, unless otherwise specified
Table 2 Maximum ratings
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Continuous drain current1)
I ‡
31.2
19.7
99.6
845
A
A
T† = 25°C
T† = 100°C
T† = 25°C
Pulsed drain current2)
I ‡‚ÔÛÐÙþ
Eƒ»
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
mJ I‡ = 6.2A, V‡‡ = 50V
Eƒ¸
1.30 mJ I‡ = 6.2A, V‡‡ = 50V
I ƒ¸
6.2
50
20
30
A
dv/dt
V•»
V/ns V‡» = 0 ... 400V
-20
-30
V
static
AC (f > 1 Hz)
Power dissipation (non FullPAK)
TO-247, TO-220, I²PAK
PÚÓÚ
277.8 W
T† = 25°C
T† = 25°C
Power dissipation (FullPAK)
TO-220 FP
PÚÓÚ
34.7
150
60
W
Operating and storage temperature
T΂TÙÚÃ
-55
°C
Mounting torque (non FullPAK)
TO-247, TO-220, I²PAK
Ncm M3 and M3.5 screws
Ncm M2.5 screws
Mounting torque (FullPAK)
TO-220 FP
50
Continuous diode forward current
Diode pulse current
I »
31.2
99.6
50
A
T† = 25°C
T† = 25°C
I »‚ÔÛÐÙþ
dv/dt
diË/dt
A
Reverse diode dv/dt3)
V/ns
A/µs
V‡» = 0 ... 400V, I»‡ ù I‡,
TÎ = 25°C
Maximum diode commutation speed
900
1) Limited by TÎ ÑÈà. Maximum
2) Pulse width tÔ limited by TÎ ÑÈà
3) VÔþÈÏ<Vñ…¸ò‡»», TÎ<TÎ ÑÈà, identical low side and high side switch with same Rg
Final Data Sheet
Rev. 2.6, 2011-09-26
4
650V CoolMOS™ CFD2 Power Transistor
IPW65R110CFD, IPB65R110CFD, IPP65R110CFD
IPA65R110CFD, IPI65R110CFD
3
Thermal characteristics
Table 3 Thermal characteristics TO-247, TO-220, I²PAK
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Thermal resistance, junction - case
Thermal resistance, junction - ambient
RÚÌœ†
RÚÌœƒ
0.45 °C/W
62
°C/W leaded
Soldering temperature, wavesoldering only
allowed at leads
1.6 mm (0.063 in.) from case for
10s
TÙÓÐÁ
260
°C
Table 4 Thermal characteristics TO-220 FP
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Thermal resistance, junction - case
Thermal resistance, junction - ambient
RÚÌœ†
RÚÌœƒ
3.6
80
°C/W
°C/W leaded
Soldering temperature, wavesoldering only
allowed at leads
1.6 mm (0.063 in.) from case for
10s
TÙÓÐÁ
260
°C
Table 5 Thermal characteristics D²PAK
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Thermal resistance, junction - case
RÚÌœ†
RÚÌœƒ
0.45 °C/W
SMD version, device on PCB,
minimal footprint
Thermal resistance, junction - ambient1)
62
°C/W
°C
SMD version, device on PCB,
6cm² cooling area
35
Soldering temperature, wave- &
reflowsoldering allowed
TÙÓÐÁ
260
reflow MSL
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection.
PCB is vertical without air stream cooling.
Final Data Sheet
Rev. 2.6, 2011-09-26
5
650V CoolMOS™ CFD2 Power Transistor
IPW65R110CFD, IPB65R110CFD, IPP65R110CFD
IPA65R110CFD, IPI65R110CFD
4
Electrical characteristics
at TÎ = 25°C, unless otherwise specified
Table 6 Static characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Drain-source breakdown voltage
Gate threshold voltage
Vñ…¸ò‡»» 650
V
V•» = 0V, I‡ = 1mA
V•»ñÚÌò
I ‡»»
3.5
4
4.5
1.5
V
V‡» = V•», I‡ = 1.3mA
Zero gate voltage drain current
µA
V‡» = 650V, V•» = 0V, TÎ = 25°C
V‡» = 650V, V•» = 0V,
TÎ = 150°C
400
Gate-source leakage current
I •»»
100
nA
Â
V•» = 20V, V‡» = 0V
Drain-source on-state resistance
R‡»ñÓÒò
0.099 0.11
0.257
V•» = 10V, I‡ = 12.7A, TÎ = 25°C
V•» = 10V, I‡ = 12.7A,
TÎ = 150°C
Gate resistance
R•
1.3
Â
f = 1MHz, open drain
Table 7 Dynamic characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Input capacitance
CÍÙÙ
3240
160
pF
pF
V•» = 0V, V‡» = 100V, f = 1MHz
Output capacitance
CÓÙÙ
Effective output capacitance, energy
related1)
CÓñþØò
118
582
pF
pF
V•» = 0V, V‡» = 0 ... 400V
I‡ = constant, V•» = 0V,
V‡» = 0 ... 400V
Effective output capacitance, time related2) CÓñÚØò
Turn-on delay time
Rise time
tÁñÓÒò
tØ
16
11
68
6
ns
ns
ns
ns
V‡‡ = 400V, V•» = 13V,
I‡ = 19.1A, R• = 1.8Â
Turn-off delay time
Fall time
tÁñÓËËò
tË
Table 8 Gate charge characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Gate to source charge
Gate to drain charge
Gate charge total
QÃÙ
21
nC
nC
nC
V
V‡‡ = 480V, I‡ = 19.1A,
V•» = 0 to 10V
QÃÁ
64
QÃ
118
6.4
Gate plateau voltage
VÔÐÈÚþÈÛ
1) CÓñþØò is a fixed capacitance that gives the same stored energy as CÓÙÙ while V‡» is rising from 0 to 400V
2) CÓñÚØò is a fixed capacitance that gives the same charging time as CÓÙÙ while V‡» is rising from 0 to 400V
Final Data Sheet
Rev. 2.6, 2011-09-26
6
650V CoolMOS™ CFD2 Power Transistor
IPW65R110CFD, IPB65R110CFD, IPP65R110CFD
IPA65R110CFD, IPI65R110CFD
Table 9 Reverse diode characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Diode forward voltage
V»‡
tØØ
0.9
150
0.8
8.3
V
V•» = 0V, IŒ = 19.1A, TÎ = 25°C
Reverse recovery time
ns
µC
A
V¸ = 400V, IŒ = 19.1A,
diŒ/dt = 100A/µs
Reverse recovery charge
Peak reverse recovery current
QØØ
I ØØÑ
Final Data Sheet
Rev. 2.6, 2011-09-26
7
650V CoolMOS™ CFD2 Power Transistor
IPW65R110CFD, IPB65R110CFD, IPP65R110CFD
IPA65R110CFD, IPI65R110CFD
5
Electrical characteristics diagrams
Table 10
Power dissipation (Non FullPAK)
Power dissipation (FullPAK)
300
90
80
70
60
50
40
250
200
150
P
P
P
P
PP
PP
100
50
0
30
20
10
0
0
40
80
TC [°C]
120
160
0
40
80
TC [°C]
120
160
Ptot=f(TC)
Ptot=f(TC)
Table 11
Max. transient thermal impedance (Non FullPAK)
Max. transient thermal impedance (FullPAK)
101
101
0.5
0.5
0.2
0.1
0.2
0.1
0.05
0.05
100
100
0.02
0.02
0.01
0.01
single pulse
single pulse
Z
Z
Z
Z
ZZ
ZZ
10-1
10-1
10-2
10-2
10-5
10-4
10-3
tp [s]
10-2
10-1
10-5
10-4
10-3
10-2
tp [s]
10-1
100
101
ZthJC =f(tP); parameter: D=tp/T
Final Data Sheet
ZthJC =f(tP); parameter: D=tp/T
Rev. 2.6, 2011-09-26
8
650V CoolMOS™ CFD2 Power Transistor
IPW65R110CFD, IPB65R110CFD, IPP65R110CFD
IPA65R110CFD, IPI65R110CFD
Table 12
Safe operating area T†=25°C (Non FullPAK)
Safe operating area T†=25°C (FullPAK)
103
103
1 µs
1 µs
102
101
102
101
10 µs
100 µs
1 ms
10 ms
DC
10 µs
100 µs
1 ms
I
I
I
I
II
II
10 ms
100
10-1
10-2
100
10-1
10-2
DC
100
101
102
103
100
101
102
103
VDS [V]
VDS [V]
; Vgs>7.5V
; Vgs>7.5V
ID=f(VDS); TC=25 °C; D=0; parameter: tp
ID=f(VDS); TC=25 °C; D=0; parameter: tp
Table 13
Safe operating area T†=80°C (Non FullPAK)
Safe operating area T†=80°C (FullPAK)
102
102
1 µs
1 µs
10 µs
10 µs
101
101
100 µs
100 µs
1 ms
1 ms
100
100
I
I
I
I
II
II
10 ms
DC
10 ms
10-1
10-1
DC
10-2
10-2
100
101
102
103
100
101
102
103
VDS [V]
VDS [V]
;
Vgs>7.5V
;
ID=f(VDS); TC=80 °C; D=0; parameter: tp
ID=f(VDS); TC=80 °C; D=0; parameter: tp Vgs>7.5V
Final Data Sheet
Rev. 2.6, 2011-09-26
9
650V CoolMOS™ CFD2 Power Transistor
IPW65R110CFD, IPB65R110CFD, IPP65R110CFD
IPA65R110CFD, IPI65R110CFD
Table 14
Typ. output characteristics T†=25°C
Typ. output characteristics T†=125°C
120
80
20 V
20 V
10 V
10 V
70
100
8 V
8 V
60
7 V
7 V
80
60
40
20
0
6 V
5.5 V
5 V
6 V
50
5.5 V
5 V
40
I
I
I
I
II
II
4.5 V
4.5 V
30
20
10
0
0
5
10
VDS [V]
15
20
0
5
10
VDS [V]
15
20
ID=f(VDS); Tj=25 °C; parameter: VGS
ID=f(VDS); Tj=125 °C; parameter: VGS
Table 15
Typ. drain-source on-state resistance
Drain-source on-state resistance
1.00
0.35
0.90
0.80
0.70
0.60
0.50
0.30
0.25
0.20
0.15
98%
typ
R
R
R
R
RR
RR
0.40
0.30
0.20
0.10
0.00
0.10
0.05
0.00
5 V
5.5 V
6 V
6.5 V
7 V
10 V
0
10
20
ID [A]
30
40
-60
-20
20
60
Tj [°C]
100
140
180
RDS(on)=f(ID); Tj=125 °C; parameter: VGS
RDS(on)=f(Tj); ID=18.1 A; VGS=10 V
Final Data Sheet
Rev. 2.6, 2011-09-26
10
650V CoolMOS™ CFD2 Power Transistor
IPW65R110CFD, IPB65R110CFD, IPP65R110CFD
IPA65R110CFD, IPI65R110CFD
Table 16
Typ. transfer characteristics
Typ. gate charge
120
10
9
120 V
480 V
25 °C
100
80
8
7
6
5
4
3
2
1
0
150 °C
60
I
I
I
I
V
V
V
V
40
20
0
0
2
4
6
8
10
0
50
100
150
VGS [V]
Qgate [nC]
ID=f(VGS); |VDS|=20V;
VGS=f(Qgate); ID=19.2 A pulsed; parameter: VDD
Table 17
Avalanche energy
Drain-source breakdown voltage
900
760
740
720
700
680
660
640
800
700
600
500
400
E
E
E
E
V
V
V
V
620
600
580
560
540
300
200
100
0
0
50
100
Tj [°C]
150
200
-60
-20
20
60
Tj [°C]
100
140
180
EAS=f(Tj); ID=6.2 A; VDD=50 V
VBR(DSS)=f(Tj); ID=10 mA
Final Data Sheet
Rev. 2.6, 2011-09-26
11
650V CoolMOS™ CFD2 Power Transistor
IPW65R110CFD, IPB65R110CFD, IPP65R110CFD
IPA65R110CFD, IPI65R110CFD
Table 18
Typ. capacitances
Typ. CÓÙÙ stored energy
104
18
Ciss
16
14
12
10
8
103
102
Coss
Crss
C
C
C
C
E
E
E
E
6
101
4
2
100
0
0
100
200
300
VDS [V]
400
500
600
0
100
200
300
VDS [V]
400
500
600
C=f(VDS); VGS=0 V; f=1 MHz
Eoss=f(VDS)
Table 19
Forward characteristics of reverse diode
102
125 °C
25 °C
101
I
I
I
I
100
10-1
0.0
0.5
1.0
1.5
VSD [V]
IF=f(VSD); parameter: Tj
Final Data Sheet
Rev. 2.6, 2011-09-26
12
650V CoolMOS™ CFD2 Power Transistor
IPW65R110CFD, IPB65R110CFD, IPP65R110CFD
IPA65R110CFD, IPI65R110CFD
6
Test Circuits
Table 20 Diode_characteristics
Test circuit for diode characteristics
Diode recovery waveform
ID
RG1
VDS
RG2
RG1 = RG2
Table 21 Switching_times
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Table 22 Unclamped_inductive
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
VD
ID
VDS
VDS
VDS
ID
Final Data Sheet
Rev. 2.6, 2011-09-26
13
650V CoolMOS™ CFD2 Power Transistor
IPW65R110CFD, IPB65R110CFD, IPP65R110CFD
IPA65R110CFD, IPI65R110CFD
7
Package Outlines
Figure 1 Outline PG-TO 247, dimensions in mm/inches
Final Data Sheet
Rev. 2.6, 2011-09-26
14
650V CoolMOS™ CFD2 Power Transistor
IPW65R110CFD, IPB65R110CFD, IPP65R110CFD
IPA65R110CFD, IPI65R110CFD
Figure 2 Outline PG-TO 263, dimensions in mm/inches
Final Data Sheet
Rev. 2.6, 2011-09-26
15
650V CoolMOS™ CFD2 Power Transistor
IPW65R110CFD, IPB65R110CFD, IPP65R110CFD
IPA65R110CFD, IPI65R110CFD
Figure 3 Outline PG-TO 220, dimensions in mm/inches
Final Data Sheet
Rev. 2.6, 2011-09-26
16
650V CoolMOS™ CFD2 Power Transistor
IPW65R110CFD, IPB65R110CFD, IPP65R110CFD
IPA65R110CFD, IPI65R110CFD
Figure 4 Outline PG-TO 220 FullPAK, dimensions in mm/inches
Final Data Sheet
Rev. 2.6, 2011-09-26
17
650V CoolMOS™ CFD2 Power Transistor
IPW65R110CFD, IPB65R110CFD, IPP65R110CFD
IPA65R110CFD, IPI65R110CFD
Figure 5 Outline PG-TO 262, dimensions in mm/inches
Final Data Sheet
Rev. 2.6, 2011-09-26
18
650V CoolMOS™ CFD2 Power Transistor
IPW65R110CFD, IPB65R110CFD, IPP65R110CFD
IPA65R110CFD, IPI65R110CFD
8
Appendix A
Table 23 Related Links
IFX Design Tools:
•
http://www.infineon.com/cms/en/product/promopages/designtools/index.html
IFX CoolMOS Webpage:
•
http://www.infineon.com/cms/en/product/channel.html?channel=ff80808112ab681d0112ab6a628704d8
Final Data Sheet
Rev. 2.6, 2011-09-26
19
650V CoolMOS™ CFD2 Power Transistor
IPW65R110CFD, IPB65R110CFD, IPP65R110CFD
IPA65R110CFD, IPI65R110CFD
Revision History
IPW65R110CFD, IPB65R110CFD, IPP65R110CFD, IPA65R110CFD, IPI65R110CFD
Revision: 2011-09-26, Rev. 2.6
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release the final datasheet
-
2.1
2.2
2.3
2.4
2.5
2.6
2011-06-07
2011-06-22
2011-08-30
2011-09-14
2011-09-16
2011-09-26
update to CFD2 standard
update pin naming
release of new pin naming
update the Igss test condition
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Edition 2011-08-01
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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or
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Final Data Sheet
Rev. 2.6, 2011-09-26
20
相关型号：
IPB65R110CFD7
英飞凌 650V CoolMOS™ CFD7 超结 MOSFET IPB65R110CFD7 采用 D2PAK 封装，尤为适用于诸如服务器、电信、太阳能和电动汽车充电站等工业应用中的谐振拓扑结构。相较于竞品，该产品可显著提高效率。作为 CFD2 超结 MOSFET 系列的后续产品，IPB65R110CFD7 的栅极电荷更低，关断行为得以改善，反向恢复电荷较低，从而可显著提高效率与功率密度，且击穿电压可额外提高 50V。
INFINEON
IPB65R110CFDA
Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2
INFINEON
IPB65R125C7
英飞凌的 CoolMOS™ C7 超结 MOSFET 系列是技术的一次突破性进步，在全球范围内实现了低 RDS(on)/封装，并且得益于其低开关损耗，可在全负载范围内提高效率。
INFINEON
IPB65R145CFD7A
D2PAK 3 引脚封装中的 145 mOhm IPB65R145CFD7A 是汽车级认证 650V CoolMOS™ SJ 功率 MOSFET CFD7A 系列中的一款产品。与上一代产品相比，CoolMOS™ CFD7A 具有更高的可靠性和功率密度，同时增强了设计灵活性。
INFINEON
IPB65R150CFDA
650V CoolMOS™ CFDA 超结 (SJ) MOSFET 是英飞凌第二代市场领先汽车应用高压 CoolMOS™ 功率 MOSFET。650V CoolMOS™ CFDA 系列产品不仅满足汽车行业的高质量和高可靠性要求，还集成快速体二极管。
INFINEON
IPB65R150CFDAATMA1
Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2
INFINEON
IPB65R150CFDATMA1
Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
INFINEON
IPB65R155CFD7
英飞凌 650V CoolMOS™ CFD7 超结 MOSFET IPB65R155CFD7 采用 D2PAK 封装，尤为适用于诸如服务器、电信、太阳能和电动汽车充电站等工业应用中的谐振拓扑结构。相较于竞品，该产品可显著提高效率。作为 CFD2 超结 MOSFET 系列的后续产品，IPB65R155CFD7 的栅极电荷更低，关断行为得以改善，反向恢复电荷较低，从而可显著提高效率与功率密度，且击穿电压可额外提高 50V。
INFINEON
IPB65R190C6ATMA1
Power Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
INFINEON
IPB65R190C7
英飞凌的 CoolMOS™ C7 超结 MOSFET 系列是技术的一次突破性进步，在全球范围内实现了低 RDS(on)/封装，并且得益于其低开关损耗，可在全负载范围内提高效率。
INFINEON
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