select brandShort,logo,brand from pdf_brand where id=10020 limit 1 IPB65R190C7ATMA2_技术文档
首页 |元器件品牌

IPB65R190C7ATMA2 [INFINEON]

Power Field-Effect Transistor, 13A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN;
IPB65R190C7ATMA2
型号： IPB65R190C7ATMA2
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor, 13A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

开关 脉冲 晶体管
文件： 总15页 (文件大小：1780K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源

相关型号：

IPB65R190CFD

 Metal Oxide Semiconduvtor Field Effect Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
86 INFINEON

IPB65R190CFD7A

 D2PAK 3 引脚封装中的 190mOhm IPB65R190CFD7A是汽车级认证 650V CoolMOS™ SJ 功率 MOSFET CFD7A 系列中的一款产品。与上一代产品相比，CoolMOS™ CFD7A 具有更高的可靠性和功率密度，同时增强了设计灵活性。

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
0 INFINEON

IPB65R190CFDA

 暂无描述

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
0 INFINEON

IPB65R190CFDAATMA1

 Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
0 INFINEON

IPB65R190CFDATMA2

 Power Field-Effect Transistor, TO-263, D2PAK-3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
0 INFINEON

IPB65R190E6

 650V CoolMOS™ E6 Power Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
15 INFINEON

IPB65R225C7

 650V CoolMOS™ C7 Power Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
35 INFINEON

IPB65R230CFD7A

 D2PAK 3 引脚封装中的 230mOhm IPB65R230CFD7A是汽车级认证 650V CoolMOS™ SJ 功率 MOSFET CFD7A 系列中的一款产品。与上一代产品相比，CoolMOS™ CFD7A 具有更高的可靠性和功率密度，同时增强了设计灵活性。

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
0 INFINEON

IPB65R280C6

 650V CoolMOS C6 Power Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
46 INFINEON

IPB65R280C6ATMA1

 Power Field-Effect Transistor, 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
0 INFINEON

IPB65R280E6

 650V CoolMOS E6 Power Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
13 INFINEON

IPB65R310CFD

 650V CoolMOS C6 CFD Power Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
35 INFINEON

IPB65R310CFDAATMA1

 Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
0 INFINEON

IPB65R380C6

 650V CoolMOS C6 Power Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
31 INFINEON

IPB65R380C6ATMA1

 Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
0 INFINEON

IPB65R420CFD

 650V CoolMOS C6 CFD Power Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
34 INFINEON

IPB65R600C6

 650V CoolMOS C6 Power Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
30 INFINEON

IPB65R660CFD

 650V CoolMOS CFD Power Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
32 INFINEON

IPB65R660CFDA

 650V CoolMOS™ CFDA 超结 (SJ) MOSFET 是英飞凌第二代市场领先汽车应用高压 CoolMOS™ 功率 MOSFET。650V CoolMOS™ CFDA 系列产品不仅满足汽车行业的高质量和高可靠性要求，还集成快速体二极管。

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
0 INFINEON

IPB65R660CFDATMA1

 Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
0 INFINEON
©2020 ICPDF网 联系我们和版权申明