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IPBE65R115CFD7A [INFINEON]

D2PAK 7 引脚封装中的 115mOhm IPBE65R115CFD7A 是汽车级认证 650V CoolMOS™ SJ 功率 MOSFET CFD7A 系列中的一款产品。与上一代产品相比，CoolMOS™ CFD7A 具有更高的可靠性和功率密度，同时增强了设计灵活性。结合使用英飞凌的 650V CoolMOS™ CFD7A 技术和 D2PAK 7 引脚封装时，更出色的效率和热性能将令客户获益匪浅。D2PAK 7 引脚（驱动器-源极引脚）中使用的开尔文源极概念克服了源极电感造成的限制，并提升了开关性能。 因此，系统级别（特别是高电流下）的优点是降低了开关损耗和热量。此外，漏极和源极/栅极之间的爬电距离增加 4.2mm，有助于在高达 475V 的蓄电池电压等级下使用器件。;
IPBE65R115CFD7A
型号： IPBE65R115CFD7A
厂家： Infineon    Infineon
描述：

D2PAK 7 引脚封装中的 115mOhm IPBE65R115CFD7A 是汽车级认证 650V CoolMOS™ SJ 功率 MOSFET CFD7A 系列中的一款产品。与上一代产品相比，CoolMOS™ CFD7A 具有更高的可靠性和功率密度，同时增强了设计灵活性。结合使用英飞凌的 650V CoolMOS™ CFD7A 技术和 D2PAK 7 引脚封装时，更出色的效率和热性能将令客户获益匪浅。D2PAK 7 引脚（驱动器-源极引脚）中使用的开尔文源极概念克服了源极电感造成的限制，并提升了开关性能。 因此，系统级别（特别是高电流下）的优点是降低了开关损耗和热量。此外，漏极和源极/栅极之间的爬电距离增加 4.2mm，有助于在高达 475V 的蓄电池电压等级下使用器件。

电池 开关 栅 驱动 驱动器 栅极
文件： 总14页 (文件大小：1411K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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IPBE65R115CFD7A  
MOSFET  
D²-PAKꢀ7pin  
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice  
650VꢀCoolMOS™ꢀCFD7AꢀisꢀInfineon'sꢀlatestꢀgenerationꢀofꢀmarketꢀleading  
automotiveꢀqualifiedꢀhighꢀvoltageꢀCoolMOS™ꢀMOSFETs.ꢀInꢀadditionꢀtoꢀthe  
well-knownꢀattributesꢀofꢀhighꢀqualityꢀandꢀreliabilityꢀrequiredꢀbyꢀthe  
automotiveꢀindustry,ꢀtheꢀnewꢀCoolMOS™ꢀCFD7Aꢀseriesꢀprovidesꢀforꢀan  
integratedꢀfastꢀbodyꢀdiodeꢀandꢀcanꢀbeꢀusedꢀforꢀPFCꢀandꢀresonant  
switchingꢀtopologiesꢀlikeꢀtheꢀZVSꢀphase-shiftꢀfull-bridgeꢀandꢀLLC.  
tab  
1
2
3
4
5
6
7
Features  
•ꢀLatestꢀ650Vꢀautomotiveꢀqualifiedꢀtechnologyꢀwithꢀintegratedꢀfastꢀbody  
diodeꢀonꢀtheꢀmarketꢀfeaturingꢀultraꢀlowꢀQrr  
•ꢀLowestꢀFOMꢀRDS(on)*QgꢀandꢀRDS(on)*Eoss  
•ꢀ100%ꢀavalancheꢀtested  
Drain  
tab  
•ꢀKelvinꢀsourceꢀcontactꢀavailable  
•ꢀBest-in-classꢀRDS(on)ꢀinꢀSMDꢀandꢀTHDꢀpackages  
Gate  
Pin 1  
*1  
*2  
Benefits  
Driver  
Source  
Pin 2  
Power  
Source  
Pin 3-7  
•ꢀOptimizedꢀforꢀhigherꢀbatteryꢀvoltagesꢀupꢀtoꢀ475ꢀVꢀthanksꢀtoꢀfurther  
improvedꢀrobustness  
*1: Internal body diode  
*2: Integrated ESD diode  
•ꢀLowerꢀswitchingꢀlossesꢀenablingꢀhigherꢀswitchingꢀfrequencies  
•ꢀHighꢀqualityꢀandꢀreliability  
•ꢀAdvancedꢀcontrollabilityꢀdueꢀtoꢀkelvinꢀsource  
•ꢀIncreasedꢀpackageꢀcreepageꢀdistance  
•ꢀIncreasedꢀefficiencyꢀinꢀlightꢀloadꢀandꢀfullꢀloadꢀconditions  
Potentialꢀapplications  
SuitableꢀforꢀPFCꢀandꢀDC-DCꢀstagesꢀfor:  
•ꢀUnidirectionalꢀandꢀbidirectionalꢀDC-DCꢀconverters,  
•ꢀOn-BoardꢀbatteryꢀChargers  
Productꢀvalidation  
QualifiedꢀaccordingꢀtoꢀAECꢀQ101  
Pleaseꢀnote:ꢀTheꢀsourceꢀandꢀsenseꢀsourceꢀpinsꢀareꢀnotꢀexchangeable.  
Theirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.ꢀForꢀproductionꢀpartꢀapproval  
processꢀ(PPAP)ꢀreleaseꢀweꢀproposeꢀtoꢀshareꢀapplicationꢀrelated  
informationꢀduringꢀanꢀearlyꢀdesignꢀphaseꢀtoꢀavoidꢀdelaysꢀinꢀPPAPꢀrelease.  
PleaseꢀcontactꢀInfineonꢀsalesꢀoffice.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
650  
115  
41  
Unit  
VDS  
V
RDS(on),max  
Qg,typ  
mΩ  
nC  
A
ID,pulse  
82  
Eoss @ 400V  
Body diode diF/dt  
5.6  
µJ  
1300  
A/µs  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
65A115F7  
RelatedꢀLinks  
IPBE65R115CFD7A  
PG-TO263-7-11  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.2,ꢀꢀ2021-11-24  
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice  
IPBE65R115CFD7A  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Final Data Sheet  
2
Rev.ꢀ2.2,ꢀꢀ2021-11-24  
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice  
IPBE65R115CFD7A  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
21  
13  
TC=25°C  
A
Continuous drain current1)  
ID  
TC=100°C  
Pulsed drain current2)  
ID,pulse  
EAS  
IAS  
-
-
-
-
-
-
-
-
-
-
-
-
-
82  
A
TC=25°C  
Avalanche energy, single pulse  
Avalanche current, single pulse  
MOSFET dv/dt ruggedness  
Gate source voltage (static)  
Gate source voltage (dynamic)  
Power dissipation  
-
97  
mJ  
A
ID=4.7A; VDD=50V; see table 10  
-
-
4.7  
120  
20  
dv/dt  
VGS  
VGSk,pulse  
Ptot  
-
V/ns VDS=0...400V  
-20  
-30  
-
V
static;  
30  
V
frepetition<=100kHz, tpulse <= 2ns  
114  
150  
150  
-
W
°C  
°C  
TC=25°C  
Storage temperature  
Tstg  
-55  
-40  
-
-
-
Operating junction temperature  
Mounting torque  
Tj  
-
Ncm -  
Continuous diode forward current  
Diode pulse current2)  
IS  
-
21  
A
A
TC=25°C  
IS,pulse  
-
82  
TC=25°C  
VDS=0...400V,ꢀISD<=9.7A,ꢀTj=25°Cꢀꢀꢀꢀ  
Reverse diode dv/dt3)  
dv/dt  
diF/dt  
-
-
-
-
70  
V/ns  
see table 8  
VDS=0...400V,ꢀISD<=9.7A,ꢀTj=25°Cꢀꢀꢀꢀ  
Maximum diode commutation speed  
1300 A/µs  
see table 8  
1) Limited by Tj max  
.
2) Pulse width tp limited by Tj,max  
3) Identical low side and high side switch with identical RG  
Final Data Sheet  
3
Rev.ꢀ2.2,ꢀꢀ2021-11-24  
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice  
IPBE65R115CFD7A  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case  
RthJC  
Tsold  
-
1.10  
°C/W -  
Soldering temperature, reflow soldering  
allowed  
-
-
260  
°C  
reflow MSL1  
Final Data Sheet  
4
Rev.ꢀ2.2,ꢀꢀ2021-11-24  
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice  
IPBE65R115CFD7A  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
For applications with applied blocking voltage > 475 V, it is required that the customer evaluates the impact of  
cosmic radiation effect in early design phase and contacts the Infineon sales office for the necessary technical  
support by Infineon.  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
650  
3.5  
Typ.  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage1)  
V(BR)DSS  
V(GS)th  
-
V
V
VGS=0V,ꢀID=1mA  
4
4.5  
VDS=VGS,ꢀID=0.49mA  
-
-
-
50  
1
-
VDS=650V,ꢀVGS=0V,ꢀTj=25°C  
VDS=650V,ꢀVGS=0V,ꢀTj=150°C  
Zero gate voltage drain current  
IDSS  
IGSS  
RDS(on)  
RG  
µA  
µA  
Gate-source leakage current incl.  
protection diode  
-
-
1
VGS=20V,ꢀVDS=0V  
-
-
0.103 0.115  
0.224  
VGS=10V,ꢀID=9.7A,ꢀTj=25°C  
VGS=10V,ꢀID=9.7A,ꢀTj=150°C  
Drain-source on-state resistance  
Gate resistance  
Ω
Ω
-
-
6.0  
-
f=250kHz,ꢀopenꢀdrain  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
External parasitic elements (PCB layout) influence switching behavior significantly.  
Stray inductances and coupling capacitances must be minimized.  
For layout recommendations please use provided application notes or contact Infineon sales office.  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
1950  
29  
Max.  
Input capacitance  
Output capacitance  
Ciss  
-
-
-
-
pF  
pF  
VGS=0V,ꢀVDS=400V,ꢀf=250kHz  
VGS=0V,ꢀVDS=400V,ꢀf=250kHz  
Coss  
Effective output capacitance, energy  
related2)  
Co(er)  
Co(tr)  
td(on)  
tr  
-
-
-
-
-
-
70  
741  
17  
3
-
-
-
-
-
-
pF  
pF  
ns  
ns  
ns  
ns  
VGS=0V,ꢀVDS=0...400V  
Effective output capacitance, time  
related3)  
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V  
VDD=400V,ꢀVGS=13V,ꢀID=9.7A,  
RG=1.8Ω;ꢀseeꢀtableꢀ9  
Turn-on delay time  
Rise time  
VDD=400V,ꢀVGS=13V,ꢀID=9.7A,  
RG=1.8Ω;ꢀseeꢀtableꢀ9  
VDD=400V,ꢀVGS=13V,ꢀID=9.7A,  
RG=1.8Ω;ꢀseeꢀtableꢀ9  
Turn-off delay time  
Fall time  
td(off)  
tf  
61  
4
VDD=400V,ꢀVGS=13V,ꢀID=9.7A,  
RG=1.8Ω;ꢀseeꢀtableꢀ9  
1) We do not recommend using the CoolMOS mentioned in this datasheet to operate in “linear mode”. For assessment of  
potential “linear mode”, please contact Infineon sales office.  
2)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
3)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
Final Data Sheet  
5
Rev.ꢀ2.2,ꢀꢀ2021-11-24  
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice  
IPBE65R115CFD7A  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  
Values  
Typ.  
11  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
V
VDD=400V,ꢀID=9.7A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=9.7A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=9.7A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=9.7A,ꢀVGS=0ꢀtoꢀ10V  
Qgd  
13  
Qg  
41  
Gate plateau voltage  
Vplateau  
5.6  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics  
Values  
Typ.  
1.1  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Diode forward voltage  
Reverse recovery time  
VSD  
trr  
-
-
V
VGS=0V,ꢀIF=9.7A,ꢀTj=25°C  
VR=400V,ꢀIF=9.7A,ꢀdiF/dt=100A/µs;  
see table 8  
-
-
-
110  
0.56  
8.7  
-
-
-
ns  
VR=400V,ꢀIF=9.7A,ꢀdiF/dt=100A/µs;  
see table 8  
Reverse recovery charge  
Qrr  
Irrm  
µC  
A
VR=400V,ꢀIF=9.7A,ꢀdiF/dt=100A/µs;  
see table 8  
Peak reverse recovery current  
Final Data Sheet  
6
Rev.ꢀ2.2,ꢀꢀ2021-11-24  
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice  
IPBE65R115CFD7A  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea  
125  
102  
1 µs  
100  
75  
50  
25  
0
101  
10 µs  
100  
100 µs  
10-1  
10-2  
10-3  
1 ms  
0
25  
50  
75  
100  
125  
150  
100  
101  
102  
103  
TCꢀ[°C]  
VDSꢀ[V]  
Ptot=f(TC)  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
102  
101  
1 µs  
101  
100  
10 µs  
100  
0.5  
100 µs  
1 ms  
0.2  
0.1  
10-1  
10-2  
10-3  
10-1  
0.05  
0.02  
0.01  
single pulse  
10-2  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
7
Rev.ꢀ2.2,ꢀꢀ2021-11-24  
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice  
IPBE65R115CFD7A  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics  
125  
80  
60  
40  
20  
0
20 V  
20 V  
10 V  
10 V  
8 V  
100  
75  
50  
25  
0
8 V  
7 V  
7 V  
6 V  
5.5 V  
6 V  
5 V  
5.5 V  
5 V  
4.5 V  
15  
4.5 V  
0
5
10  
20  
0
5
10  
15  
20  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance  
0.360  
2.2  
0.330  
0.300  
1.9  
1.6  
1.3  
1.0  
0.7  
0.4  
6.5 V  
7 V  
10 V  
20 V  
5.5 V  
6 V  
0.270  
0.240  
0.210  
0.180  
0
20  
40  
60  
80  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
IDꢀ[A]  
Tjꢀ[°C]  
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(Tj);ꢀID=9.7ꢀA;ꢀVGS=10ꢀV  
Final Data Sheet  
8
Rev.ꢀ2.2,ꢀꢀ2021-11-24  
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice  
IPBE65R115CFD7A  
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge  
125  
12  
10  
8
25 °C  
100  
75  
50  
25  
0
400 V  
120 V  
150 °C  
6
4
2
0
0
2
4
6
8
10  
12  
0
10  
20  
30  
40  
50  
VGSꢀ[V]  
Qgateꢀ[nC]  
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj  
VGS=f(Qgate);ꢀID=9.7ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
Diagramꢀ12:ꢀAvalancheꢀenergy  
102  
100  
80  
60  
40  
20  
0
101  
125 °C  
25 °C  
100  
10-1  
0.0  
0.3  
0.6  
0.9  
1.2  
1.5  
25  
50  
75  
100  
125  
150  
VSDꢀ[V]  
Tjꢀ[°C]  
IF=f(VSD);ꢀparameter:ꢀTj  
EAS=f(Tj);ꢀID=4.7ꢀA;ꢀVDD=50ꢀV  
Final Data Sheet  
9
Rev.ꢀ2.2,ꢀꢀ2021-11-24  
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice  
IPBE65R115CFD7A  
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagramꢀ14:ꢀTyp.ꢀcapacitances  
750  
105  
104  
103  
102  
101  
100  
10-1  
720  
690  
660  
630  
600  
Ciss  
Coss  
Crss  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
100  
200  
300  
400  
500  
Tjꢀ[°C]  
VDSꢀ[V]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz  
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy  
7
6
5
4
3
2
1
0
0
100  
200  
300  
400  
500  
VDSꢀ[V]  
Eoss=f(VDS  
)
Final Data Sheet  
10  
Rev.ꢀ2.2,ꢀꢀ2021-11-24  
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice  
IPBE65R115CFD7A  
5ꢀꢀꢀꢀꢀTestꢀCircuits  
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics  
Test circuit for diode characteristics  
Diode recovery waveform  
Rg1  
VDS  
Rg 2  
IF  
Rg1 = Rg 2  
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimesꢀ(ss)  
Switching times test circuit for inductive load  
Switching times waveform  
VDS  
90%  
10%  
VDS  
VGS  
VGS  
td(off)  
tf  
td(on)  
ton  
tr  
toff  
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀloadꢀ(ss)  
Unclamped inductive load test circuit  
Unclamped inductive waveform  
V(BR)DS  
ID  
VDS  
VDS  
VDS  
ID  
Final Data Sheet  
11  
Rev.ꢀ2.2,ꢀꢀ2021-11-24  
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice  
IPBE65R115CFD7A  
6ꢀꢀꢀꢀꢀPackageꢀOutlines  
MILLIMETERS  
MAX.  
DIMENSIONS  
MIN.  
4.30  
0.00  
2.30  
0.50  
0.00  
0.40  
1.17  
9.05  
7.30  
9.80  
9.36  
0.00  
8.40  
A
A1  
A2  
b
4.50  
0.20  
2.50  
0.70  
0.15  
0.60  
1.37  
9.45  
7.50  
10.20  
9.56  
0.30  
8.60  
b1  
c
c1  
D
DOCUMENT NO.  
Z8B00189665  
D1  
E
E1  
E2  
E3  
e
REVISION  
01  
SCALE 5:1  
1.27  
H
15.00  
5mm  
0
1
2
3
4
L
4.20  
0.70  
1.70  
5.20  
1.30  
2.30  
L1  
L2  
L3  
P
EUROPEAN PROJECTION  
2.70  
0.35  
4.02  
2.03  
1.40  
0.00°  
0.55  
4.22  
2.23  
1.60  
8.00°  
Q
R
ISSUE DATE  
20.09.2018  
S
THETA  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO263-7-11,ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
12  
Rev.ꢀ2.2,ꢀꢀ2021-11-24  
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice  
IPBE65R115CFD7A  
7ꢀꢀꢀꢀꢀAppendixꢀA  
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks  
• IFXꢀCoolMOSꢀCFD7AꢀWebpage:ꢀwww.infineon.com  
• IFXꢀCoolMOSꢀCFD7Aꢀapplicationꢀnote:ꢀwww.infineon.com  
• IFXꢀCoolMOSꢀCFD7Aꢀsimulationꢀmodel:ꢀwww.infineon.com  
• IFXꢀDesignꢀtools:ꢀwww.infineon.com  
Final Data Sheet  
13  
Rev.ꢀ2.2,ꢀꢀ2021-11-24  
650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice  
IPBE65R115CFD7A  
RevisionꢀHistory  
IPBE65R115CFD7A  
Revision:ꢀ2021-11-24,ꢀRev.ꢀ2.2  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.0  
2.1  
2.2  
Release of final version  
2019-07-11  
2020-04-02  
2021-11-24  
Updated marketing text, drain-source breakdown voltage footnote and disclaimer page.  
Change of wording regarding breakdown voltage / cosmic ray  
Trademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
Disclaimer  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2021ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ  
(“Beschaffenheitsgarantie”)ꢀ.  
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirementsꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestionꢀplease  
contactꢀyourꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
InfineonꢀTechnologiesꢀComponentsꢀmayꢀonlyꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀof  
InfineonꢀTechnologies,ꢀifꢀaꢀfailureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support  
deviceꢀorꢀsystem,ꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀareꢀintended  
toꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbody,ꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.  
Ifꢀtheyꢀfail,ꢀitꢀisꢀreasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
14  
Rev.ꢀ2.2,ꢀꢀ2021-11-24  

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