IPC173N10N3 [INFINEON]

英飞凌的 OptiMOS ™100V、120V 和150V 系列导通电阻 (R DS (on))极低，具有极快的开关性能，可为各种工业和消费类应用提供出色的性能。从高电流电机控制应用到快速开关 DC-DC 转换器或 D 类音频放大器，英飞凌的产品性能卓越，效率极高，空间要求极小。;


型号：	IPC173N10N3
厂家：	Infineon
描述：	英飞凌的 OptiMOS ™100V、120V 和150V 系列导通电阻 (R DS (on))极低，具有极快的开关性能，可为各种工业和消费类应用提供出色的性能。从高电流电机控制应用到快速开关 DC-DC 转换器或 D 类音频放大器，英飞凌的产品性能卓越，效率极高，空间要求极小。开关放大器电机音频放大器转换器
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中文：	中文翻译
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MOSFET

MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor

BareꢀDie

OptiMOS™3ꢀPowerꢀMOSꢀTransistorꢀChip

IPC173N10N3

DataꢀSheet

Rev.ꢀ2.5

Final

Industrialꢀ&ꢀMultimarket

OptiMOS™3ꢀPowerꢀMOSꢀTransistorꢀChip

IPC173N10N3

PowerꢀMOSꢀTransistorꢀChip

1ꢀꢀꢀꢀꢀDescription

•ꢀN-channelꢀenhancementꢀmode

•ꢀForꢀdynamicꢀcharacterizationꢀreferꢀtoꢀtheꢀdatasheetꢀofꢀIPP045N10N3ꢀG

•ꢀAQLꢀ0.65ꢀforꢀvisualꢀinspectionꢀaccordingꢀtoꢀfailureꢀcatalogue

•ꢀElectrostaticꢀDischargeꢀSensitiveꢀDeviceꢀaccordingꢀtoꢀMIL-STDꢀ883C

•ꢀDieꢀbond:ꢀsolderedꢀorꢀglued

•ꢀBacksideꢀmetallization:ꢀNiVꢀsystem

•ꢀFrontsideꢀmetallization:ꢀAlCuꢀsystem

•ꢀPassivation:ꢀnitrideꢀ(onlyꢀonꢀedgeꢀstructure)

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

Unit

Drain

V_(BR)DSS

100

R_DS(on)

4.5¹⁾

mΩ

mm²

µm

Gate

Die size

Thickness

5.762 x 3.0

220

Source

Typeꢀ/ꢀOrderingꢀCode

Package

Chip

Marking

RelatedꢀLinks

IPC173N10N3

not defined

2ꢀꢀꢀꢀꢀElectricalꢀCharacteristicsꢀonꢀWaferꢀLevel

atꢀT_jꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀ

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Drain-source breakdown voltage

Gate threshold voltage

V_(BR)DSS

V_GS(th)

I_DSS

100

V_GS=0ꢀVꢀ,I_D=1ꢀmA

V_DS=V_GS,ꢀI_D=150ꢀµA

V_GS=0ꢀVꢀ,V_DS=100ꢀV

V_GS=20ꢀVꢀ,V_DS=0ꢀV

2.7

3.5

Zero gate voltage drain current

Gate-source leakage current

Drain-source on- resistance

Reverse diode forward on-voltage

Avalanche energy, single pulse

0.1

µA

I_GSS

3.6²⁾

100

R_DS(on)

V_SD

100³⁾mΩ V_GS=10ꢀVꢀ,I_D=2.0ꢀA

0.7

45⁴⁾

1.2

V_GS=0ꢀVꢀ,I_F=1A

E_AS

I_D=30 A, R_GS=25 Ω

¹⁾packaged in a P-TO220-3 (see ref. product)

²⁾ꢀtypicalꢀbareꢀdieꢀR_DS(on);ꢀV_GS=10ꢀV

³⁾limited by wafer test-equipment

⁴⁾Wafer tested. For general avalanche capability refer to the datasheet of IPP045N10N3 G

Final Data Sheet

Rev.ꢀ2.5,ꢀꢀ2014-07-25

OptiMOS™3ꢀPowerꢀMOSꢀTransistorꢀChip

IPC173N10N3

3ꢀꢀꢀꢀꢀPackageꢀOutlines

Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀChip,ꢀdimensionsꢀinꢀµm

Final Data Sheet

Rev.ꢀ2.5,ꢀꢀ2014-07-25

OptiMOS™3ꢀPowerꢀMOSꢀTransistorꢀChip

IPC173N10N3

RevisionꢀHistory

IPC173N10N3

Revision:ꢀ2014-07-25,ꢀRev.ꢀ2.5

Previous Revision

Revision Date

2.5

Subjects (major changes since last revision)

Release of Final Version

2014-07-25

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Warnings

Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,

pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.

TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or

automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa

failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand

aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare

intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis

reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.

Final Data Sheet

Rev.ꢀ2.5,ꢀꢀ2014-07-25

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