IPC50N04S5-5R8 [INFINEON]

车规级MOSFET;


型号：	IPC50N04S5-5R8
厂家：	Infineon
描述：	车规级MOSFET
文件：	总9页 (文件大小：420K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IPC50N04S5-5R8

OptiMOS^™-5 Power-Transistor

Product Summary

V_DS

5.8

R_DS(on),max

I_D

Features

PG-TDSON-8-33

• OptiMOS™ - power MOSFET for automotive applications

• N-channel - Enhancement mode - Normal Level

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

IPC50N04S5-5R8

PG-TDSON-8-33 5N045R8

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25 °C, V_GS=10 V

T _C=100°C, V_GS=10V²⁾

Pulsed drain current²⁾

I _D,pulse

E_AS

T _C=25°C

200

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=25A

I _AS

V_GS

±20

P_tot

T _C=25°C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

-55 ... +175

Rev. 1.2

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2016-12-06

IPC50N04S5-5R8

Values

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Thermal characteristics²⁾

R _thJC

Thermal resistance, junction - case

3.6

K/W

Thermal resistance, junction -

ambient

6 cm²cooling area³⁾

R _thJA

Electrical characteristics, at T _j=25 °C, unless otherwise specified

Static characteristics

V_(BR)DSSV_GS=0V, I _D= 1mA

V_GS(th)V_DS=V_GS, I _D=13µA

Drain-source breakdown voltage

Gate threshold voltage

2.2

2.8

3.4

V_DS=40V, V_GS=0V,

T _j=25°C

I _DSS

Zero gate voltage drain current

µA

V_DS=40V, V_GS=0V,

T _j=125°C²⁾

100

I _GSS

V_GS=20V, V_DS=0V

Gate-source leakage current

6.1

100 nA

R _DS(on)V_GS=7V, I _D=25A

V_GS=10V, I _D=25A

Drain-source on-state resistance

7.2

5.8

Rev. 1.2

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2016-12-06

IPC50N04S5-5R8

Values

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Dynamic characteristics²⁾

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C _iss

C _oss

C_rss

t _d(on)

t _r

840

230

3.2

1090 pF

305

V_GS=0V, V_DS=25V,

f =1MHz

V_DD=20V, V_GS=10V,

I _D=50A, R _G,ext=3.5W

t _d(off)

t _f

Turn-off delay time

Fall time

Gate Charge Characteristics²⁾

Gate to source charge

Gate to drain charge

Gate charge total

Q _gs

4.0

3.2

5.3

4.7

Q _gd

V_DD=32V, I _D=50A,

V_GS=0 to 10V

Q _g

V_plateau

Gate plateau voltage

4.9

Reverse Diode

Diode continous forward current²⁾

Diode pulse current²⁾

I _S

T _C=25°C

I _S,pulse

200

V_GS=0V, I _F=25A,

T _j=25°C

V_SD

Diode forward voltage

0.8

1.1

V_R=20V, I _F=50A,

di_F/dt =100A/µs

Reverse recovery time²⁾

Reverse recovery charge²⁾

t _rr

Q _rr

¹⁾Current is limited by package; with an R _thJC= 3.6K/W the chip is able to carry 62A at 25°C.

²⁾The parameter is not subject to production test- verified by design/characterization.

³⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm²(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 1.2

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2016-12-06

IPC50N04S5-5R8

1 Power dissipation

2 Drain current

P_tot= f(T _C); V_GS= 10 V

I _D= f(T _C); V_GS= 10 V

100

150

200

100

150

200

T_C[°C]

3 Safe operating area

4 Max. transient thermal impedance

Z _thJC= f(t _p)

I _D= f(V_DS); T _C= 25 °C; D = 0

parameter: t _p

parameter: D =t _p/T

10¹

1000

100

0.5

10⁰

1 µs

0.1

0.05

10 µs

0.01

100 µs

10^-1

single pulse

150 µs

10^-2

10^-3

0.1

100

10^-6

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

V_DS[V]

t_p[s]

Rev. 1.2

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2016-12-06

IPC50N04S5-5R8

5 Typ. output characteristics

I _D= f(V_DS); T _j= 25 °C

parameter: V_GS

6 Typ. drain-source on-state resistance

R _DS(on)= f(I _D); T _j= 25 °C

parameter: V_GS

200

10 V

4.5 V

150

5 V

5.5 V

100

5.5 V

7 V

10 V

4.5V

120

160

200

V_DS[V]

I_D[A]

7 Typ. transfer characteristics

I _D= f(V_GS); V_DS= 6V

parameter: T _j

8 Typ. drain-source on-state resistance

R _DS(on)= f(T _j); I _D= 25 A; V_GS= 10 V

200

160

120

175 °C

25 °C

-55 °C

1.5

2.5

3.5

4.5

5.5

-60

-20

100

140

180

V_GS[V]

T_j[°C]

Rev. 1.2

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2016-12-06

IPC50N04S5-5R8

9 Typ. gate threshold voltage

V_GS(th)= f(T _j); V_GS= V_DS

parameter: I _D

10 Typ. capacitances

C = f(V_DS); V_GS= 0 V; f = 1 MHz

10⁴

3.5

130 µA

10³

Ciss

2.5

13 µA

Coss

1.5

10²

Crss

0.5

10¹

-60

-20

100

140

180

V_DS[V]

T_j[°C]

11 Typical forward diode characteristics

12 Avalanche characteristics

I _{A S}= f(t _AV

IF = f(V_SD)

)

parameter: T _j

parameter: T_j(start)

10³

100

25 °C

10²

100 °C

150 °C

25 °C

175 °C

10¹

10⁰

0.2

0.4

0.6

0.8

1.2

1.4

100

1000

V_SD[V]

t_AV[µs]

Rev. 1.2

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2016-12-06

IPC50N04S5-5R8

13 Avalanche energy

14 Drain-source breakdown voltage

E_AS= f(T _j)

V_BR(DSS)= f(T _j); I _D= 1 mA

12.5 A

25 A

50 A

-60

-20

100

140

180

125

175

T_j[°C]

15 Typ. gate charge

16 Gate charge waveforms

V_GS= f(Q _gate); I _D= 50 A pulsed

parameter: V_DD

V _GS

Q_g

8 V

32 V

V _gs(th)

Q_g(th)

Q_sw

Q_gd

Q_gate

Q_gs

Q_gate[nC]

Rev. 1.2

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2016-12-06

IPC50N04S5-5R8

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions

or characteristics. With respect to any examples or hints given herein, any typical values stated

herein and/or any information regarding the application of the device, Infineon Technologies hereby

disclaims any and all warranties and liabilities of any kind, including without limitation, warranties

of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact

the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances.

For information on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with the

express written approval of Infineon Technologies, if a failure of such components can reasonably be

expected to cause the failure of that life-support device or system or to affect the safety or

effectiveness of that device or system. Life support devices or systems are intended to be implanted

in the human body or to support and/or maintain and sustain and/or protect human life.

If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Rev. 1.2

page 8

2016-12-06

IPC50N04S5-5R8

Revision History

Version

Date

Changes

Revision 1.0

Revision 1.1

Revision 1.2

22.08.2016 Final Data Sheet

07.09.2016 Detailed package name added

06.12.2016 Update the IDSS for Tj=25°C

Rev. 1.2

page 9

2016-12-06

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