IPC60N04S4-06_15 [INFINEON]

N-channel - Enhancement mode;


型号：	IPC60N04S4-06_15
厂家：	Infineon
描述：	N-channel - Enhancement mode
文件：	总9页 (文件大小：202K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IPC60N04S4-06

OptiMOS^TM-T2 Power-Transistor

Product Summary

V_DS

R_DS(on)

I_D

6.0

m

Features

• N-channel - Enhancement mode

PG-TDSON-8-23

• AEC qualified

• MSL1 up to 260°C peak reflow

• Green product (RoHS compliant)

• 100% Avalanche tested

• Feasible for automatic optical inspection (AOI)

Type

Package

Marking

4N0406

IPC60N04S4-06

PG-TDSON-8-23

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

T _C=25°C,

T _J=175°C,

_GS=10V

60¹⁾

I _D

Continuous drain current

T _C=100 °C,

T _J=175°C,

58^{1, 2)}

_GS=10 V

Pulsed drain current²⁾

I _D,pulse

E_AS

I _AS

T _C=25 °C

240

120

I _D=30 A

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

V_GS

+/-20

T _C=25 °C,

T _J=175°C

P_tot

Power dissipation

-55 ... +175³⁾

T _j, T _stg

Operating and storage temperature

°C

Rev. 1.0

page 1

2015-05-22

IPC60N04S4-06

Values

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Thermal characteristics

R _thJC

Thermal resistance, junction - case

2.4

K/W

Electrical characteristics, at T _j=25 °C, unless otherwise specified

Static characteristics

V_(BR)DSSV_GS=0 V, I _D= 1 mA

V_GS(th)V_DS=V_GS, I _D= 30µA

Drain-source breakdown voltage

Gate threshold voltage

2.0

3.0

4.0

V_DS=40 V, V_GS=0 V,

T _j=25 °C

I _DSS

Zero gate voltage drain current

0.01

µA

_DS=18 V, V_GS=0 V,

T _j=85 °C²⁾

I _GSS

V_GS=20 V, V_DS=0 V

Gate-source leakage current

100 nA

R _DS(on)V_GS=10 V, I _D= 30A

Drain-source on-state resistance

5.4

6.0

m

Rev. 1.0

page 2

2015-05-22

IPC60N04S4-06

Values

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Dynamic characteristics²⁾

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C _iss

C _oss

C_rss

t _d(on)

t _r

2040

510

2650 pF

660

_GS=0 V, V_DS=25 V,

f =1 MHz

_DD=20 V, V_GS=10 V,

I _D=60 A, R _G=3.5 

t _d(off)

t _f

Turn-off delay time

Fall time

Gate Charge Characteristics²⁾

Gate to source charge

Gate to drain charge

Gate charge total

Q _gs

Q _gd

V_DD=32 V, I _D=60 A,

_GS=0 to 10 V

Q _g

5.8

V_plateau

Gate plateau voltage

Reverse Diode

Diode continous forward current²⁾

Diode pulse current²⁾

I _S

T _C=25 °C

I _S,pulse

240

V_GS=0 V, I _F=30 A,

T _j=25 °C

V_SD

Diode forward voltage

0.9

1.3

Reverse recovery time²⁾

t _rr

V_R=20 V, I _F=50A,

di_F/dt =100 A/µs

Reverse recovery charge²⁾

Q _rr

¹⁾Current is limited by package; with an R _thJC= 2.4 K/W the chip is able to carry 78 A at 25°C.

²⁾Defined by design. Not subject to production test.

³⁾T _J> 150°C is limited to 200h operation time over life time of the device

Rev. 1.0

page 3

2015-05-22

IPC60N04S4-06

1 Power dissipation

2 Drain current

_tot= f(T _C); V_GS= 10 V

I _D= f(T _C); V_GS= 10 V

100

150

200

100

150

200

T_C[°C]

3 Safe operating area

4 Max. transient thermal impedance

Z _thJC= f(t _p)

I _D= f(V_DS); T _C= 25 °C; D = 0

parameter: t _p

parameter: D =t _p/T

10¹

1000

100

1 µs

0.5

10⁰

10 µs

100 µs

150 µs

0.1

0.05

10^-1

0.01

single pulse

10^-2

10^-3

0.1

100

10^-6

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

V_DS[V]

t_p[s]

Rev. 1.0

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2015-05-22

IPC60N04S4-06

5 Typ. output characteristics

I _D= f(V_DS); T _j= 25 °C

parameter: V_GS

6 Typ. drain-source on-state resistance

R _DS(on)= (I _D); T _j= 25 °C

parameter: V_GS

240

10 V

5.5 V

5 V

200

160

120

7 V

5.5 V

6.5 V

6 V

6.5 V

5.5 V

5 V

7 V

10 V

I_D[A]

V_DS[V]

7 Typ. transfer characteristics

I _D= f(V_GS); V_DS= 6V

parameter: T _j

8 Typ. drain-source on-state resistance

R _DS(on)= f(T _j); I _D= 30 A; V_GS= 10 V

240

200

160

120

175 °C

25 °C

-55 °C

-60

-20

100

140

180

T_j[°C]

V_GS[V]

Rev. 1.0

page 5

2015-05-22

IPC60N04S4-06

9 Typ. gate threshold voltage

_GS(th)= f(T _j); V_GS= V_DS

10 Typ. capacitances

C = f(V_DS); V_GS= 0 V; f = 1 MHz

parameter: I _D

10⁴

10³

10²

10¹

3.8

3.6

3.4

3.2

Ciss

300 µA

Coss

2.8

2.6

2.4

2.2

30 µA

1.8

1.6

1.4

Crss

1.2

-60

-20

T_j[°C]

100

140

180

V_DS[V]

11 Typical forward diode characteristicis

12 Typ. avalanche characteristics

I _AS= f(t _AV

IF = f(V_SD)

)

parameter: T _j

parameter: T_j(start)

10³

10²

10¹

100

25 °C

100 °C

150 °C

25 °C

175 °C

10⁰

0.2

0.4

0.6

0.8

1.2

1.4

100

1000

V_SD[V]

t_AV[µs]

Rev. 1.0

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2015-05-22

IPC60N04S4-06

13 Typical avalanche energy

_AS= f(T _j)

14 Drain-source breakdown voltage

V_BR(DSS)= f(T _j); I _D= 1 mA

parameter: I _D

240

15 A

180

120

30 A

60 A

-60

-20

100

140

180

125

175

T_j[°C]

15 Typ. gate charge

16 Gate charge waveforms

_GS= f(Q _gate); I _D= 60 A pulsed

parameter: V_DD

8 V

32 V

V_GS

Q_g

Q_gate

Q_gd

Q_gs

Q_gate[nC]

Rev. 1.0

page 7

2015-05-22

IPC60N04S4-06

Published by

Infineon Technologies AG

81726 Munich, Germany

Infineon Technologies AG 2015

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions

or characteristics. With respect to any examples or hints given herein, any typical values stated

herein and/or any information regarding the application of the device, Infineon Technologies hereby

disclaims any and all warranties and liabilities of any kind, including without limitation, warranties

of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact

the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances.

For information on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with the

express written approval of Infineon Technologies, if a failure of such components can reasonably be

expected to cause the failure of that life-support device or system or to affect the safety or

effectiveness of that device or system. Life support devices or systems are intended to be implanted

in the human body or to support and/or maintain and sustain and/or protect human life.

If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Rev. 1.0

page 8

2015-05-22

IPC60N04S4-06

Revision History

Version

Date

Changes

Revision 1.0

2015-05-22 Final Data Sheet

Rev. 1.0

page 9

2015-05-22

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