IPC70N04S5-4R6 [INFINEON]
Power Field-Effect Transistor,;
| 型号： | IPC70N04S5-4R6 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总9页 (文件大小：454K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPC70N04S5-4R6
OptiMOS™-5 Power-Transistor
Product Summary
VDS
40
4.6
70
V
RDS(on),max
ID
mW
A
Features
PG-TDSON-8-34
• OptiMOS™ - power MOSFET for automotive applications
• N-channel - Enhancement mode - Normal Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPC70N04S5-4R6
PG-TDSON-8-34 5N044R6
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
Continuous drain current1)
I D
T C=25 °C, VGS=10 V
T C=100°C, VGS=10V1)
70
A
54
Pulsed drain current2)
I D,pulse
EAS
T C=25°C
280
Avalanche energy, single pulse2)
Avalanche current, single pulse4)
Gate source voltage
I D=35A
32
70
mJ
A
I AS
-
VGS
-
±20
V
Ptot
T C=25°C
Power dissipation
50
W
°C
T j, T stg
Operating and storage temperature
-
-55 ... +175
Rev. 1.0
page 1
2016-12-09
IPC70N04S5-4R6
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
R thJC
Thermal resistance, junction - case
-
-
-
-
-
3.0
50
K/W
Thermal resistance, junction -
ambient
6 cm2 cooling area3)
R thJA
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS VGS=0V, I D= 1mA
VGS(th) VDS=VGS, I D=17µA
Drain-source breakdown voltage
Gate threshold voltage
40
-
-
V
2.2
2.8
3.4
VDS=40V, VGS=0V,
T j=25°C
I DSS
Zero gate voltage drain current
-
-
-
-
1
µA
VDS=40V, VGS=0V,
T j=125°C1)
100
I GSS
VGS=20V, VDS=0V
Gate-source leakage current
-
-
-
-
100 nA
R DS(on) VGS=7V, I D=35A
VGS=10V, I D=35A
Drain-source on-state resistance
4.7
3.9
5.7
4.6
mW
Rev. 1.0
page 2
2016-12-09
IPC70N04S5-4R6
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
1100
310
20
4
1430 pF
412
VGS=0V, VDS=25V,
f =1MHz
30
-
-
-
-
ns
2
VDD=20V, VGS=10V,
I D=70A, R G,ext=3.5W
t d(off)
t f
Turn-off delay time
Fall time
7
3
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
5.0
4.3
6.5
6.5
24.2
-
nC
Q gd
VDD=32V, I D=70A,
VGS=0 to 10V
Q g
18.2
4.9
Vplateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
70
T C=25°C
I S,pulse
280
VGS=0V, I F=35A,
T j=25°C
VSD
Diode forward voltage
-
0.8
1.1
V
VR=20V, I F=50A,
diF/dt =100A/µs
Reverse recovery time2)
t rr
-
-
32
20
-
-
ns
Reverse recovery charge2)
Q rr
nC
1) Current is limited by package; with an R thJC = 3 K/W the chip is able to carry 75A at 25°C.
2) The parameter is not subject to production test- verified by design/characterization.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4) The device is tested in production with an avalanche current of 60 A.
Rev. 1.0
page 3
2016-12-09
IPC70N04S5-4R6
1 Power dissipation
2 Drain current
Ptot = f(T C); VGS = 10 V
I D = f(T C); VGS = 10 V
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
101
1000
100
10
0.5
1 µs
100
10 µs
0.1
0.05
100 µs
10-1
0.01
150 µs
single pulse
10-2
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.0
page 4
2016-12-09
IPC70N04S5-4R6
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: VGS
280
24
4.5 V
22
10 V
240
5 V
20
7 V
5.5 V
18
16
14
12
10
8
200
160
120
80
40
0
5.5 V
5 V
6
7 V
10 V
4
4.5 V
2
0
0
1
2
3
0
40
80
120
160
200
240
280
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D = f(VGS); VDS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 35 A; VGS = 10 V
280
240
200
160
120
80
8
7
6
5
4
3
2
1
40
175 °C
25 °C
-55 °C
0
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
-60
-20
20
60
100
140
180
VGS [V]
Tj [°C]
Rev. 1.0
page 5
2016-12-09
IPC70N04S5-4R6
9 Typ. gate threshold voltage
VGS(th) = f(T j); VGS = VDS
parameter: I D
10 Typ. capacitances
C = f(VDS); VGS = 0 V; f = 1 MHz
104
103
102
101
4
3.5
3
170 µA
Ciss
2.5
17 µA
Coss
2
1.5
1
0.5
0
Crss
0
10
20
30
-60
-20
20
60
Tj [°C]
100
140
180
VDS [V]
11 Typical forward diode characteristics
12 Avalanche characteristics
I A S= f(t AV
IF = f(VSD)
)
parameter: T j
parameter: Tj(start)
103
100
25 °C
100 °C
150 °C
102
10
25 °C
175 °C
101
1
100
0.1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.0
page 6
2016-12-09
IPC70N04S5-4R6
13 Avalanche energy
14 Drain-source breakdown voltage
EAS = f(T j)
VBR(DSS) = f(T j); I D = 1 mA
46
70
60
44
42
40
38
36
50
17.5 A
40
30
35 A
20
70 A
10
0
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
VGS = f(Q gate); I D = 70 A pulsed
parameter: VDD
10
9
V GS
Qg
8
7
8 V
32 V
6
5
4
3
2
1
0
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
0
5
10
15
20
Qgate [nC]
Rev. 1.0
page 7
2016-12-09
IPC70N04S5-4R6
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2016
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2016-12-09
IPC70N04S5-4R6
Revision History
Version
Date
Changes
Final Data Sheet
Revision 1.0
06.12.2016
Rev. 1.0
page 9
2016-12-09
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