IPD036N04LG [INFINEON]

OptiMOS3 Power-Transistor; OptiMOS3功率三极管


型号：	IPD036N04LG
厂家：	Infineon
描述：	OptiMOS3 Power-Transistor OptiMOS3功率三极管
文件：	总9页 (文件大小：232K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Type

IPD036N04L G

OptiMOS^®3 Power-Transistor

Product Summary

Features

V _DS

3.6

• Fast switching MOSFET for SMPS

• Optimized technology for DC/DC converters

• Qualified according to JEDEC¹⁾for target applications

R _DS(on),max

I _D

mΩ

• N-channel, logic level

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• 100% Avalanche tested

• Pb-free plating; RoHS compliant

Type

IPD036N04L G

• Pb-free plating; RoHS compliant

Package

Marking

PG-TO252-3

036N04L

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

V _GS=10 V, T _C=25 °C

Continuous drain current

_GS=10 V, T _C=100 °C

_GS=4.5 V, T _C=25 °C

_GS=4.5 V,

T _C=100 °C

Pulsed drain current²⁾

I _D,pulse

I _AS

T _C=25 °C

400

Avalanche current, single pulse³⁾

Avalanche energy, single pulse

Gate source voltage

T _C=25 °C

E _AS

V _GS

I _D=90 A, R _GS=25 Ω

±20

¹⁾J-STD20 and JESD22

Rev. 1.0

page 1

2007-12-06

IPD036N04L G

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

P _tot

T _C=25 °C

Power dissipation

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

°C

Values

typ.

Parameter

Symbol Conditions

Unit

min.

max.

Thermal characteristics

R _thJC

Thermal resistance, junction - case

SMD version, device on PCB

1.6

K/W

R _thJA

minimal footprint

6 cm² cooling area⁴⁾

Electrical characteristics, at T _j=25 °C, unless otherwise specified

Static characteristics

V _(BR)DSSV _GS=0 V, I _D=1 mA

Drain-source breakdown voltage

Gate threshold voltage

V _GS(th)

V _DS=V _GS, I _D=45 µA

1.2

V _DS=40 V, V _GS=0 V,

T _j=25 °C

I _DSS

Zero gate voltage drain current

0.1

µA

_DS=40 V, V _GS=0 V,

100

T _j=125 °C

I _GSS

V _GS=20 V, V _DS=0 V

Gate-source leakage current

3.9

3.0

1.6

100 nA

Drain-source on-state resistance

R _DS(on)V _GS=4.5 V, I _D=90 A

V _GS=10 V, I _D=90 A

R _G

4.9

3.6

mΩ

Gate resistance

Ω

|V _DS|>2|I _D|R _DS(on)max

g _fs

Transconductance

170

I _D=90 A

²⁾See figure 3 for more detailed information

³⁾See figure 13 for more detailed information

⁴⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 1.0

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2007-12-06

IPD036N04L G

Values

typ.

Parameter

Symbol Conditions

Unit

min.

max.

Dynamic characteristics

C _iss

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

4700

1000

6300 pF

V _GS=0 V, V _DS=20 V,

C _oss

C_rss

t _d(on)

t _r

1300

f =1 MHz

9.3

5.4

V _DD=20 V, V _GS=10 V,

I _D=30 A, R _G=1.6 Ω

t _d(off)

t _f

Turn-off delay time

Fall time

6.0

Gate Charge Characteristics⁵⁾

Gate to source charge

Gate charge at threshold

Gate to drain charge

Switching charge

Q _gs

7.4

6.1

Q _g(th)

Q _gd

V _DD=20 V, I _D=30 A,

_GS=0 to 10 V

Q _sw

Q _g

Gate charge total

V _plateau

Gate plateau voltage

3.0

V _DD=20 V, I _D=30 A,

_GS=0 to 4.5 V

Q _g

Gate charge total

V _DS=0.1 V,

_GS=0 to 10 V

Q _g(sync)

Gate charge total, sync. FET

Output charge

Q _oss

V _DD=20 V, V _GS=0 V

Reverse Diode

I _S

Diode continuous forward current

Diode pulse current

T _C=25 °C

I _S,pulse

400

V _GS=0 V, I _F=90 A,

T _j=25 °C

V _SD

Diode forward voltage

0.92

1.2

V _R=20 V, I _F=I _S,

di _F/dt =400 A/µs

Q _rr

Reverse recovery charge

⁵⁾See figure 16 for gate charge parameter definition

Rev. 1.0

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2007-12-06

IPD036N04L G

1 Power dissipation

2 Drain current

_tot=f(T _C)

I _D=f(T _C); V _GS≥10 V

100

150

200

100

150

200

T _C[°C]

3 Safe operating area

I _D=f(V _DS); T _C=25 °C; D =0

parameter: t _p

4 Max. transient thermal impedance

Z _thJC=f(t _p)

parameter: D =t _p/T

10³

1 µs

limited by on-state

resistance

10 µs

10²

100 µs

0.5

1 ms

10¹

0.2

0.1

10 ms

0.05

0.1

10⁰

0.02

0.01

single pulse

10^-1

0.01

10^-1

10⁰

10¹

10²

10^-6

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

V _DS[V]

t _p[s]

Rev. 1.0

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2007-12-06

IPD036N04L G

5 Typ. output characteristics

I _D=f(V _DS); T _j=25 °C

6 Typ. drain-source on resistance

R _DS(on)=f(I _D); T _j=25 °C

parameter: V _GS

320

3 V

5 V

4.5 V

3.2 V

280

10 V

240

3.5 V

200

160

120

4 V

4.5 V

5 V

3.5 V

3.2 V

10 V

3 V

2.8 V

100

V _DS[V]

I_D[A]

7 Typ. transfer characteristics

I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max

parameter: T _j

8 Typ. forward transconductance

g _fs=f(I _D); T _j=25 °C

200

160

120

240

200

160

120

175 °C

25 °C

120

160

200

V _GS[V]

I_D[A]

Rev. 1.0

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2007-12-06

IPD036N04L G

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

_DS(on)=f(T _j); I _D=90 A; V _GS=10 V

V _GS(th)=f(T _j); V _GS=V _DS; I _D=250 µA

2.5

1.5

98 %

typ

0.5

-60

-20

100

140

180

-60

-20

100

140

180

T _j[°C]

11 Typ. capacitances

12 Forward characteristics of reverse diode

I _F=f(V _SD

C =f(V _DS); V _GS=0 V; f =1 MHz

)

parameter: T _j

10⁴

1000

25 °C, 98%

Ciss

175 °C, 98%

Coss

10³

10²

10¹

100

25 °C

175 °C

Crss

V _DS[V]

0.0

0.5

1.0

V _SD[V]

1.5

2.0

Rev. 1.0

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2007-12-06

IPD036N04L G

13 Avalanche characteristics

_AS=f(t _AV); R _GS=25 Ω

14 Typ. gate charge

_GS=f(Q _gate); I _D=30 A pulsed

parameter: T _j(start)

parameter: V _DD

100

20 V

25 °C

8 V

100 °C

32 V

150 °C

10^-1

10⁰

10¹

10²

10³

t _AV[µs]

Q _gate[nC]

15 Drain-source breakdown voltage

16 Gate charge waveforms

_BR(DSS)=f(T _j); I _D=1 mA

V _GS

Q _g

V _gs(th)

Q _g(th)

Q _sw

Q _gd

Q _gate

Q _gs

-60

-20

100

140

180

T _j[°C]

Rev. 1.0

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2007-12-06

IPD036N04L G

Package Outline

PG-TO252-3

Footprint:

Packaging:

Rev. 1.0

page 8

2007-12-06

IPD036N04L G

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of

conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office

(www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

Rev. 1.0

page 9

2007-12-06

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