IPD053N06NATMA1 [INFINEON]
Power Field-Effect Transistor, 45A I(D), 60V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3;
| 型号： | IPD053N06NATMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 45A I(D), 60V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：437K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD053N06N
OptiMOSTM Power-Transistor
Features
Product Summary
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
VDS
60
5.3
45
V
RDS(on),max
ID
mW
A
• Superior thermal resistance
• N-channel
QOSS
nC
nC
32
27
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
QG(0V..10V)
PG-TO252-3
Type
Package
Marking
IPD053N06N
PG-TO252-3
053N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
V GS=10 V, T C=25 °C
Continuous drain current
45
45
A
V GS=10 V, T C=100 °C
V GS=10 V, T C=25 °C,
R thJA =50K/W
18
Pulsed drain current2)
I D,pulse
E AS
T C=25 °C
180
60
Avalanche energy, single pulse3)
Gate source voltage
I D=45 A, R GS=25 W
mJ
V
V GS
±20
1) J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev.2.2
page 1
2012-12-20
IPD053N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
P tot
T C=25 °C
Power dissipation
83
W
T A=25 °C,
R thJA=50 K/W
3.0
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
°C
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
R thJA
Thermal resistance, junction - case
Device on PCB
bottom
-
-
-
-
-
-
1.8
62
40
K/W
minimal footprint
6 cm² cooling area4)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=36 µA
Drain-source breakdown voltage
Gate threshold voltage
60
-
-
V
2.1
2.8
3.3
V DS=60 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.5
10
1
µA
V DS=60 V, V GS=0 V,
T j=125 °C
100
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
-
-
10
4.5
6.0
1.5
100 nA
Drain-source on-state resistance
R DS(on) V GS=10 V, I D=45 A
V GS=6 V, I D=12 A
R G
5.3
8.0
2.3
mW
Gate resistance
W
|V DS|>2|I D|R DS(on)max
I D=45 A
,
g fs
Transconductance
38
75
-
S
Rev.2.2
page 2
2012-12-20
IPD053N06N
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
-
-
-
-
-
-
-
2000
490
22
2500 pF
613
V GS=0 V, V DS=30 V,
f =1 MHz
C oss
Crss
t d(on)
t r
44
12
-
-
-
-
ns
V DD=30 V, V GS=10 V,
I D=45 A,
12
t d(off)
t f
Turn-off delay time
Fall time
20
R G,ext,ext=3 W
7
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
9
5
-
-
nC
Q g(th)
Q gd
5
7
-
V DD=30 V, I D=45 A,
V GS=0 to 10 V
Q sw
9
Q g
Gate charge total
27
4.8
32
-
V plateau
Gate plateau voltage
V
V DS=0.1 V,
V GS=0 to 10 V
Q g(sync)
Gate charge total, sync. FET
Output charge
-
-
24
32
-
-
nC
Q oss
V DD=30 V, V GS=0 V
Reverse Diode
I S
Diode continuous forward current
Diode pulse current
-
-
-
-
45
A
V
T C=25 °C
I S,pulse
180
V GS=0 V, I F=45 A,
T j=25 °C
V SD
Diode forward voltage
-
1.0
1.2
t rr
Reverse recovery time
-
-
32
28
51
-
ns
V R=30 V, I F=45A ,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
nC
Rev.2.2
page 3
2012-12-20
IPD053N06N
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
100
80
60
40
20
0
50
40
30
20
10
0
0
25
50
75 100 125 150 175 200
0
25
50
75 100 125 150 175 200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC=f(t p)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
parameter: D =t p/T
103
10
limited by on-state
resistance
1 µs
10 µs
102
101
100
10-1
1
100 µs
0.5
0.2
0.1
1 ms
10 ms
DC
0.05
0.02
0.1
0.01
single pulse
0.01
10-1
100
101
102
0.00001 0.0001
0.001
0.01
0.1
1
VDS [V]
tp [s]
Rev.2.2
page 4
2012-12-20
IPD053N06N
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
180
16
14
10 V
7 V
160
140
120
100
80
6 V
5.5 V
5 V
6 V
12
10
8
5.5 V
6
7 V
60
5 V
10 V
4
40
2
20
0
0
0.0
0.5
1.0
1.5
VDS [V]
2.0
2.5
3.0
0
20 40 60 80 100 120 140 160 180
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
180
160
140
120
100
80
80
70
60
50
40
30
20
10
0
60
40
20
175 °C
25 °C
0
0
2
4
6
8
0
5
10 15 20 25 30 35 40 45
VGS [V]
ID [A]
Rev.2.2
page 5
2012-12-20
IPD053N06N
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=45 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
12
11
10
9
5
4
3
8
7
max
360 mA
6
36 µA
typ
5
2
4
3
2
1
0
1
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
10000
104
103
Ciss
1000
103
102
Coss
100
102
101
25 °C
175 °C
Crss
10
101
100
0
0
20
40
60
0.5
1
1.5
VDS [V]
VSD [V]
Rev.2.2
page 6
2012-12-20
IPD053N06N
13 Avalanche characteristics
14 Typ. gate charge
V GS=f(Q gate); I D=45 A pulsed
parameter: V DD
I AS=f(t AV); R GS=25 W
parameter: T j(start)
100
12
10
8
30 V
12 V
48 V
100 °C
125 °C
25 °C
10
6
4
2
1
0
1
10
100
1000
0
5
10
15
20
25
30
tAV [µs]
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
70
66
62
58
54
50
V GS
Qg
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
-60
-20
20
60
100
140
180
Tj [°C]
Rev.2.2
page 7
2012-12-20
IPD053N06N
Package Outline
PG-TO252-3
Rev.2.2
page 8
2012-12-20
IPD053N06N
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.2.2
page 9
2012-12-20
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