IPD082N10N3 G [INFINEON]

英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。;


型号：	IPD082N10N3 G
厂家：	Infineon
描述：	英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。
文件：	总12页 (文件大小：778K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IPP086N10N3 G

IPI086N10N3 G

IPB083N10N3 G IPD082N10N3 G

OptiMOS^™3 Power-Transistor

Product Summary

Features

V_DS

100

8.2

• N-channel, normal level

R_{DS(on),max (TO 252)}

I_D

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target application

• Ideal for high-frequency switching and synchronous rectification

• Halogen-free according to IEC61249-2-21

Type

IPP086N10N3 G

IPI086N10N3 G

IPB083N10N3 G

IPD082N10N3 G

Package

Marking

PG-TO220-3

086N10N

PG-TO262-3

086N10N

PG-TO263-3

083N10N

PG-TO252-3

082N10N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C²⁾

I _D

Continuous drain current

T _C=100 °C

Pulsed drain current²⁾

I _D,pulse

E _AS

T _C=25 °C

320

I _D=73 A, R _GS=25 W

Avalanche energy, single pulse

Gate source voltage

110

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

125

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾J-STD20 and JESD22

²⁾See figure 3

Rev. 2.6

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2013-07-09

IPP086N10N3 G

IPI086N10N3 G

IPB083N10N3 G IPD082N10N3 G

Values

typ.

Parameter

Symbol Conditions

Unit

min.

max.

Thermal characteristics

R _thJC

Thermal resistance, junction - case

Thermal resistance,

1.2

K/W

R _thJA

minimal footprint

6 cm²cooling area³⁾

junction - ambient

Electrical characteristics, at T _j=25 °C, unless otherwise specified

Static characteristics

V _(BR)DSSV _GS=0 V, I _D=1 mA

V _GS(th)V _DS=V _GS, I _D=75 µA

Drain-source breakdown voltage

Gate threshold voltage

100

2.7

3.5

V _DS=100 V, V _GS=0 V,

T _j=25 °C

I _DSS

Zero gate voltage drain current

0.1

µA

V _DS=100 V, V _GS=0 V,

T _j=125 °C

100

I _GSS

V _GS=20 V, V _DS=0 V

Gate-source leakage current

100 nA

V _GS=10 V, I _D=73 A,

TO 220, TO 262

R _DS(on)

Drain-source on-state resistance

7.4

8.6

8.3

V _GS=10 V, I _D=73 A,

TO263

7.2

V _GS=10 V, I _D=73 A,

TO 252

8.2

V _GS=6 V, I _D=36 A, TO

220, TO 262

9.3

9.0

15.4

15.1

V _GS=6 V, I _D=36 A, TO

263

V _GS=6 V, I _D=36 A, TO

252

8.9

R _G

g _fs

Gate resistance

|V _DS|>2|I _D|R _DS(on)max

I _D=80 A

Transconductance

³⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm²(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 2.6

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2013-07-09

IPP086N10N3 G

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IPB083N10N3 G IPD082N10N3 G

Values

typ.

Parameter

Symbol Conditions

Unit

min.

max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C _iss

2990

523

3980 pF

V _GS=0 V, V _DS=50 V,

f =1 MHz

C _oss

C _rss

t _d(on)

t _r

696

V _DD=50 V, V _GS=10 V,

I _D=73 A, R _G,ext=1.6 W

t _d(off)

t _f

Turn-off delay time

Fall time

Gate Charge Characteristics⁴⁾

Gate to source charge

Gate to drain charge

Switching charge

Q _gs

Q _gd

V _DD=50 V, I _D=73 A,

V _GS=0 to 10 V

Q _sw

Q _g

4.9

Gate charge total

V _plateau

Q _oss

Gate plateau voltage

Output charge

V _DD=50 V, V _GS=0 V

Reverse Diode

I _S

Diode continous forward current

Diode pulse current

T _C=25 °C

I _S,pulse

320

V _GS=0 V, I _F=80 A,

T _j=25 °C

V _SD

Diode forward voltage

1.0

1.2

t _rr

Reverse recovery time

V _R=50 V, I _F=73 A,

di _F/dt =100 A/µs

Q _rr

Reverse recovery charge

123

⁴⁾See figure 16 for gate charge parameter definition

Rev. 2.6

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2013-07-09

IPP086N10N3 G

IPI086N10N3 G

IPB083N10N3 G IPD082N10N3 G

1 Power dissipation

2 Drain current

P _tot=f(T _C)

I _D=f(T _C); V _GS≥10 V

150

125

100

150

200

100

150

200

T_C[°C]

3 Safe operating area

I _D=f(V _DS); T _C=25 °C; D =0

parameter: t _p

4 Max. transient thermal impedance

Z _thJC=f(t _p)

parameter: D =t _p/T

10³

10¹

1 µs

limited by on-state

resistance

10 µs

10²

10¹

10⁰

10^-1

100 µs

10⁰

0.5

1 ms

0.2

0.1

10 ms

0.05

10^-1

0.02

0.01

single pulse

10^-2

10^-1

10⁰

10¹

10²

10³

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

t_p[s]

V_DS[V]

Rev. 2.6

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2013-07-09

IPP086N10N3 G

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IPB083N10N3 G IPD082N10N3 G

5 Typ. output characteristics

I _D=f(V _DS); T _j=25 °C

6 Typ. drain-source on resistance

R _DS(on)=f(I _D); T _j=25 °C

parameter: V _GS

300

10 V

4.5 V

250

7.5 V

5 V

200

150

100

6 V

7.5 V

5.5 V

10 V

5 V

4.5 V

100

V_DS[V]

I_D[A]

7 Typ. transfer characteristics

I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max

parameter: T _j

8 Typ. forward transconductance

g _fs=f(I _D); T _j=25 °C

150

100

120

100

25 °C

175 °C

120

V_GS[V]

I_D[A]

Rev. 2.6

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IPP086N10N3 G

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IPB083N10N3 G IPD082N10N3 G

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

R _DS(on)=f(T _j); I _D=73 A; V _GS=10 V; TO 220

V _GS(th)=f(T _j); V _GS=V _DS

parameter: I _D

3.5

750 µA

2.5

75 µA

98 %

typ

1.5

0.5

-60

-20

100

140

180

-60

-20

100

140

180

T_j[°C]

11 Typ. capacitances

12 Forward characteristics of reverse diode

I _F=f(V _SD

C =f(V _DS); V _GS=0 V; f =1 MHz

)

parameter: T _j

10⁴

10³

Ciss

175 °C, 98%

10³

10²

10¹

10²

25 °C

Coss

175 °C

25 °C, 98%

10¹

Crss

10⁰

V_DS[V]

0.5

1.5

V_SD[V]

Rev. 2.6

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IPB083N10N3 G IPD082N10N3 G

13 Avalanche characteristics

14 Typ. gate charge

V _GS=f(Q _gate); I _D=73 A pulsed

parameter: V _DD

I _AS=f(t _AV); R _GS=25 W

parameter: T _j(start)

100

80 V

25 °C

50 V

100 °C

20 V

150 °C

100

1000

t_AV[µs]

Q_gate[nC]

15 Drain-source breakdown voltage

16 Gate charge waveforms

V _BR(DSS)=f(T _j); I _D=1 mA

110

105

100

V _GS

Q_g

V _gs(th)

Q_g(th)

Q_sw

Q_gd

Q_gate

Q_gs

-60

-20

100

140

180

T_j[°C]

Rev. 2.6

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2013-07-09

IPP086N10N3 G

IPI086N10N3 G

IPB083N10N3 G IPD082N10N3 G

PG-TO220-3: Outline

Rev. 2.6

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2013-07-09

IPP086N10N3 G

IPI086N10N3 G

IPB083N10N3 G IPD082N10N3 G

PG-TO262-3

Rev. 2.6

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2013-07-09

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IPI086N10N3 G

IPB083N10N3 G IPD082N10N3 G

PG-TO-263 (D²-Pak)

Rev. 2.6

page 10

2013-07-09

IPP086N10N3 G

IPI086N10N3 G

IPB083N10N3 G IPD082N10N3 G

PG-TO-252 (D-Pak)

Rev. 2.6

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2013-07-09

IPP086N10N3 G

IPI086N10N3 G

IPB083N10N3 G IPD082N10N3 G

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of

conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

Rev. 2.6

page 12

2013-07-09

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