IPD100N04S4L-02 [INFINEON]
车规级MOSFET;
| 型号： | IPD100N04S4L-02 |
| 厂家： | 
Infineon |
| 描述： | 车规级MOSFET |
| 文件： | 总9页 (文件大小：232K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD100N04S4L-02
OptiMOS®-T2 Power-Transistor
Product Summary
VDS
40
1.9
100
V
RDS(on),max
ID
mW
A
Features
• OptiMOSTM - power MOSFET for automotive applications
PG-TO252-3-313
• N-channel - Enhancement mode - Logic Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPD100N04S4L-02
PG-TO252-3-313
4N04L02
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
Continuous drain current1)
I D
T C=25°C, V GS=10V
100
100
A
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse
E AS
T C=25°C
400
440
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
I D=50A
mJ
A
I AS
-
100
V GS
-
+20/-16
150
V
P tot
T C=25°C
Power dissipation
W
°C
T j, T stg
Operating and storage temperature
-
-55 ... +175
Rev. 1.0
page 1
2015-05-06
IPD100N04S4L-02
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
R thJC
R thJA
Thermal resistance, junction - case
-
-
-
-
-
-
-
1.0
62
40
K/W
minimal footprint
Thermal resistance, junction -
ambient
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=95µA
Drain-source breakdown voltage
Gate threshold voltage
40
-
-
V
1.2
1.7
2.2
V DS=40V, V GS=0V,
T j=25°C
I DSS
Zero gate voltage drain current
-
-
0.04
1
1
µA
V DS=18V, V GS=0V,
T j=85°C2)
20
I GSS
V GS=20V, V DS=0V
Gate-source leakage current
-
-
-
-
100 nA
R DS(on) V GS=4.5V, I D=50A
V GS=10V, I D=100A
Drain-source on-state resistance
2.1
1.6
2.5
1.9
mW
Rev. 1.0
page 2
2015-05-06
IPD100N04S4L-02
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
6700
9850
1660
83
12800 pF
2160
V GS=0 V, V DS=25 V,
f =1 MHz
1160
36
-
190
14
-
-
-
-
ns
-
12
V DD=20V, V GS=10V,
I D=100A, R G=3.5W
t d(off)
t f
Turn-off delay time
Fall time
-
65
-
55
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
28
13
40
35
165
-
nC
Q gd
V DD=32V, I D=100A,
V GS=0 to 10V
Q g
126
2.8
V plateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
100
400
T C=25°C
I S,pulse
V GS=0V, I F=100A,
T j=25°C
V SD
Diode forward voltage
Reverse recovery time2)
Reverse recovery charge2)
-
-
-
0.9
53
65
1.3
V
V R=20V, I F=50A,
di F/dt =100A/µs
t rr
-
-
ns
nC
Q rr
1) Current is limited by bondwire; with an R thJC = 1.0K/W the chip is able to carry 151A at 25°C.
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2015-05-06
IPD100N04S4L-02
1 Power dissipation
2 Drain current
P tot = f(T C); V GS =10 V
I D = f(T C); V GS = 10 V
160
140
120
100
80
120
100
80
60
40
20
0
60
40
20
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(V DS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
101
1000
100
10
1 µs
10 µs
100
0.5
100 µs
0.1
1 ms
10-1
0.05
0.01
10-2
single pulse
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.0
page 4
2015-05-06
IPD100N04S4L-02
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
400
8
10 V
3 V
4.5 V
3.5 V
4 V
360
320
280
240
200
160
120
80
4 V
7
6
5
4
3
2
1
3.5 V
4.5 V
3 V
40
10 V
0
0
1
2
3
4
0
100
200
300
400
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; V GS = 10 V
400
350
300
250
200
150
3.5
3
2.5
2
100
175 °C
1.5
1
25 °C
50
0
-55 °C
1
2
3
4
5
-60
-20
20
60
100
140
180
VGS [V]
Tj [°C]
Rev. 1.0
page 5
2015-05-06
IPD100N04S4L-02
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
105
104
103
102
101
2.5
2
Ciss
950 µA
1.5
Coss
95 µA
1
0.5
0
Crss
0
5
10
15
20
25
30
-60
-20
20
60
100
140
180
VDS [V]
Tj [°C]
11 Typical forward diode characteristicis
I F = f(V SD
12 Avalanche characteristics
I A S= f(t AV
)
)
parameter: T j
parameter: Tj(start)
103
100
25 °C
100 °C
102
150 °C
10
175C
25°C
101
100
0
1
1
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.0
page 6
2015-05-06
IPD100N04S4L-02
13 Avalanche energy
E AS = f(T j)
14 Drain-source breakdown voltage
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
44
43
42
41
40
39
38
1000
25 A
800
600
50 A
400
100 A
200
0
-55
-15
25
65
105
145
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 100 A pulsed
parameter: V DD
10
9
8
7
6
5
4
3
2
1
0
V GS
8 V
32 V
Q g
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
0
40
80
Qgate [nC]
120
160
Rev. 1.0
page 7
2015-05-06
IPD100N04S4L-02
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2015-05-06
IPD100N04S4L-02
Revision History
Version
Date
Changes
2015-05-05 Final Data Sheet
Revision 1.0
Rev. 1.0
page 9
2015-05-06
相关型号：
IPD100N06S403ATMA1
Power Field-Effect Transistor, 100A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
INFINEON
IPD105N04LGBTMA1
Power Field-Effect Transistor, 40A I(D), 40V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN
INFINEON
IPD110N12N3GBUMA1
Power Field-Effect Transistor, 75A I(D), 120V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
INFINEON
IPD122N10N3 G
英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。
INFINEON
IPD122N10N3GATMA1
Power Field-Effect Transistor, 59A I(D), 100V, 0.0122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3
INFINEON
©2020 ICPDF网 联系我们和版权申明