IPD135N08N3 G [INFINEON]

OptiMOS™ 系列是高效率解决方案的市场领导者，适用于发电（例如太阳能微逆变器）、电源（例如服务器和通信）以及功耗（例如电动车）领域。;


型号：	IPD135N08N3 G
厂家：	Infineon
描述：	OptiMOS™ 系列是高效率解决方案的市场领导者，适用于发电（例如太阳能微逆变器）、电源（例如服务器和通信）以及功耗（例如电动车）领域。通信服务器
文件：	总9页 (文件大小：354K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IPD135N08N3 G

OptiMOS^(TM)3 Power-Transistor

Product Summary

Features

V_DS

13.5

• Ideal for high frequency switching

• Optimized technology for DC/DC converters

• Excellent gate charge x R _DS(on)product (FOM)

R_DS(on),max

I_D

• N-channel, normal level

• 100% avalanche tested

• Pb-free plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target applications

• Halogen-free according to IEC61249-2-21

Type

IPD135N08N3 G

Package

Marking

PG-TO-252-3

135N08N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C²⁾

I _D

Continuous drain current

T _C=100 °C

Pulsed drain current²⁾

I _D,pulse

E _AS

T _C=25 °C

180

Avalanche energy, single pulse³⁾

Gate source voltage

I _D=45 A, R _GS=25 W

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾J-STD20 and JESD22

²⁾See figure 3 for more detailed information

³⁾See figure 13 for more detailed information

Rev. 2.2

page 1

2014-05-19

IPD135N08N3 G

Values

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

R _thJC

Thermal resistance, junction - case

Thermal resistance,

1.9

K/W

R _thJA

minimal footprint

6 cm²cooling area⁴⁾

junction - ambient

Electrical characteristics, at T _j=25 °C, unless otherwise specified

Static characteristics

V _(BR)DSSV _GS=0 V, I _D=1 mA

V _GS(th)V _DS=V _GS, I _D=33 µA

Drain-source breakdown voltage

Gate threshold voltage

2.8

3.5

V _DS=80 V, V _GS=0 V,

T _j=25 °C

I _DSS

Zero gate voltage drain current

0.1

µA

V _DS=80 V, V _GS=0 V,

T _j=125 °C

100

I _GSS

V _GS=20 V, V _DS=0 V

Gate-source leakage current

100 nA

R _DS(on)V _GS=10 V, I _D=45 A

V _GS=6 V, I _D=22.5 A

R _G

Drain-source on-state resistance

11.4

16.0

13.5

Gate resistance

|V _DS|>2|I _D|R _DS(on)max

I _D=45 A

g _fs

Transconductance

⁴⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm²(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 2.2

page 2

2014-05-19

IPD135N08N3 G

Values

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C _iss

1300

353

1730 pF

V _GS=0 V, V _DS=40 V,

f =1 MHz

C _oss

C _rss

t _d(on)

t _r

469

V _DD=40 V, V _GS=10 V,

I _D=45 A, R _G,ext=1.6 W

t _d(off)

t _f

Turn-off delay time

Fall time

Gate Charge Characteristics⁵⁾

Gate to source charge

Gate to drain charge

Switching charge

Q _gs

Q _gd

V _DD=40 V, I _D=45 A,

V _GS=0 to 10 V

Q _sw

Q _g

Gate charge total

5.5

V _plateau

Q _oss

Gate plateau voltage

Output charge

V _DD=40 V, V _GS=0 V

Reverse Diode

I _S

Diode continous forward current

Diode pulse current

T _C=25 °C

I _S,pulse

180

V _GS=0 V, I _F=45 A,

T _j=25 °C

V _SD

Diode forward voltage

1.0

1.2

t _rr

Reverse recovery time

V _R=40 V, I _F=I _S,

di _F/dt =100 A/µs

Q _rr

Reverse recovery charge

⁵⁾See figure 16 for gate charge parameter definition

Rev. 2.2

page 3

2014-05-19

IPD135N08N3 G

1 Power dissipation

2 Drain current

P _tot=f(T _C)

I _D=f(T _C); V _GS≥10 V

100

150

200

100

150

200

T_C[°C]

3 Safe operating area

I _D=f(V _DS); T _C=25 °C; D =0

parameter: t _p

4 Max. transient thermal impedance

Z _thJC=f(t _p)

parameter: D =t _p/T

10³

10¹

limited by on-state

resistance

1 µs

10²

10⁰

0.5

10 µs

0.2

0.1

100 µs

0.05

0.02

10¹

10^-1

0.01

single pulse

1 ms

10 ms

10⁰

10^-2

10^-1

10⁰

10¹

10²

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

V_DS[V]

t_p[s]

Rev. 2.2

page 4

2014-05-19

IPD135N08N3 G

5 Typ. output characteristics

I _D=f(V _DS); T _j=25 °C

6 Typ. drain-source on resistance

R _DS(on)=f(I _D); T _j=25 °C

parameter: V _GS

150

10 V

8 V

7 V

6.5 V

5 V

5.5 V

6 V

100

6.5 V

7 V

8 V

6 V

10 V

5.5 V

5 V

4.5 V

120

V_DS[V]

I_D[A]

7 Typ. transfer characteristics

I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max

parameter: T _j

8 Typ. forward transconductance

g _fs=f(I _D); T _j=25 °C

120

175 °C

25 °C

100

V_GS[V]

I_D[A]

Rev. 2.2

page 5

2014-05-19

IPD135N08N3 G

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

V _GS(th)=f(T _j); V _GS=V _DS

parameter: I _D

R _DS(on)=f(T _j); I _D=45 A; V _GS=10 V

330 µA

33 µA

max

typ

-60

-20

100

140

180

-60

-20

100

140

180

T_j[°C]

11 Typ. capacitances

12 Forward characteristics of reverse diode

I _F=f(V _SD

C =f(V _DS); V _GS=0 V; f =1 MHz

)

parameter: T _j

10⁴

10³

Ciss

10³

Coss

10²

25 °C

175 °C, 98%

175 °C

10²

Crss

10¹

25 °C, 98%

10¹

10⁰

0.5

1.5

V_SD[V]

2.5

V_DS[V]

Rev. 2.2

page 6

2014-05-19

IPD135N08N3 G

13 Avalanche characteristics

14 Typ. gate charge

V _GS=f(Q _gate); I _D=45 A pulsed

parameter: V _DD

I _AS=f(t _AV); R _GS=25 W

parameter: T _j(start)

100

40 V

16 V

64 V

25 °C

100 °C

150 °C

0.1

t_AV[µs]

100

1000

Q_gate[nC]

15 Drain-source breakdown voltage

16 Gate charge waveforms

V _BR(DSS)=f(T _j); I _D=1 mA

V _GS

Q_g

V _gs(th)

Q_g(th)

Q_sw

Q_gd

Q_gate

Q_gs

-60

-20

100

140

180

T_j[°C]

Rev. 2.2

page 7

2014-05-19

IPD135N08N3 G

PG-TO-252-3

Rev. 2.2

page 8

2014-05-19

IPD135N08N3 G

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of

conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

Rev. 2.2

page 9

2014-05-19

相关型号：