IPD35CN10NG [INFINEON]

OptiMOS2 Power-Transistor; OptiMOS2功率三极管
IPD35CN10NG
元器件型号: IPD35CN10NG
生产厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述和应用:

OptiMOS2 Power-Transistor
OptiMOS2功率三极管

PDF文件: 总12页 (文件大小:907K)
下载文档:  下载PDF数据表文档文件
型号参数:IPD35CN10NG参数

IPD35N10S3L-26

OptiMOS-T Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
106 INFINEON

IPD35N10S3L26ATMA1

Power Field-Effect Transistor, 35A I(D), 100V, 0.0319ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
1 INFINEON

IPD400N06NG

OptiMOS® Power-Transistor Features N-channel enhancement - normal level Avalanche rated

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
35 INFINEON

IPD400N06NG

OptiMOS㈢ Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
40 INFINEON

IPD400N06NG_08

OptiMOS® Power-Transistor Features N-channel enhancement - normal level Avalanche rated

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
11 INFINEON

IPD400N06NGBTMA1

Power Field-Effect Transistor, 27A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 INFINEON

IPD40N03S4L-08

OptiMOS-T2 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
30 INFINEON

IPD40N03S4L-08

OptiMOS-T2 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
6 INFINEON

IPD40N03S4L-08_10

OptiMOS-T2 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
9 INFINEON

IPD40N03S4L08ATMA1

Power Field-Effect Transistor, 40A I(D), 30V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 INFINEON

IPD49CN10NG

OptiMOS㈢2 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
26 INFINEON

IPD49CN10NGBUMA1

Power Field-Effect Transistor, 20A I(D), 100V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC PACKAGE-3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 INFINEON

IPD49CN10NGTR

Power Field-Effect Transistor, 20A I(D), 100V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC PACKAGE-3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 INFINEON

IPD50CN10NG

OptiMOS2 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
16 INFINEON

IPD50N03S2-07

OptiMOS Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
49 INFINEON