IPD380P06NM [INFINEON]
OptiMOS™ P-channel MOSFETs 60V in D²PAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal and logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.;
| 型号： | IPD380P06NM |
| 厂家： | 
Infineon |
| 描述： | OptiMOS™ P-channel MOSFETs 60V in D²PAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal and logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. |
| 文件： | 总10页 (文件大小：912K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD380P06NM
MOSFET
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
D-PAK
Features
tab
•ꢀP-Channel
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
•ꢀ100%ꢀavalancheꢀtested
•ꢀNormalꢀLevel
•ꢀEnhancementꢀmode
1
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
3
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Drain
tab
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Gate
Pin 1
Parameter
Value
Unit
Source
Pin 3
VDS
-60
V
RDS(on),max
ID
38
mΩ
A
-35
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPD380P06NM
PG-TO 252-3
380P06NM
-
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2019-03-28
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
IPD380P06NM
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2019-03-28
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
IPD380P06NM
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTC=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-35
-28
VGS=-10ꢀV,ꢀTC=25ꢀ°C
VGS=-10ꢀV,ꢀTC=100ꢀ°C
Continuous drain current
ID
A
Pulsed drain current1)
Avalanche energy, single pulse2)
Gate source voltage
ID,pulse
EAS
-
-
-
-
-
-140
559
20
A
TC=25ꢀ°C
-
mJ
V
ID=-35ꢀA,ꢀRGS=25ꢀΩ
VGS
Ptot
-20
-
-
Power dissipation
125
W
TC=25ꢀ°C
IEC climatic category; DIN IEC 68-1:
55/175/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJA
-
-
-
1.2
°C/W -
°C/W -
Device on PCB,
-
75
6 cm² cooling area3)
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
-60
Typ.
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
-
V
V
VGS=0ꢀV,ꢀID=-1ꢀmA
-2.1
-3
-4
VDS=VGS,ꢀID=-1700ꢀµA
-
-
-0.1
-10
-1
-100
VDS=-60ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=-60ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
IDSS
µA
nA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IGSS
RDS(on)
RG
-
-
-
-
-10
32
5
-100
VGS=-20ꢀV,ꢀVDS=0ꢀV
38
-
mΩ VGS=-10ꢀV,ꢀID=-35ꢀA
Ω
-
Transconductance
gfs
33
-
S
|VDS|≥2|ID|RDS(on)max,ꢀID=-35ꢀA
1) See Diagram 3 for more detailed information
2) See Diagram 13 for more detailed information
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2019-03-28
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
IPD380P06NM
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
2500
360
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
-
-
-
pF
pF
pF
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz
Output capacitance
Reverse transfer capacitance
83
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-17.5ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
16
19
47
19
-
-
-
-
ns
ns
ns
ns
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-17.5ꢀA,
RG,ext=1.6ꢀΩ
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-17.5ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-17.5ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ
Values
Typ.
-14
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=-30ꢀV,ꢀID=-35ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-35ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-35ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-35ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-35ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-35ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀVGS=0ꢀV
Qg(th)
Qgd
-8
-24
Qsw
-30
Gate charge total
Qg
-63
Gate plateau voltage
Output charge
Vplateau
Qoss
-5.5
-28
nC
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-35
-140
-1.2
-
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
-0.9
63
V
VGS=0ꢀV,ꢀIF=-35ꢀA,ꢀTj=25ꢀ°C
VR=-30ꢀV,ꢀIF=-37ꢀA,ꢀdiF/dt=-100ꢀA/µs
VR=-30ꢀV,ꢀIF=-37ꢀA,ꢀdiF/dt=-100ꢀA/µs
Reverse recovery time
Reverse recovery charge
ns
nC
Qrr
192
-
1) See diagram ,Gate charge waveform, for gate charge parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2019-03-28
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
IPD380P06NM
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
140
40
35
30
25
20
15
10
5
120
100
80
60
40
20
0
0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
TC[°C]
TC[°C]
Ptot=f(TC)
ID=f(TC);ꢀ|VGS|≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
102
101
100
10-1
100 µs
100
0.5
1 ms
10 ms
0.2
DC
0.1
10-1
0.05
0.02
0.01
single pulse
10-2
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
-VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2019-03-28
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
IPD380P06NM
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
100
80
-10 V
-8 V
-7 V
80
60
40
20
0
68
-6 V
-5 V
-4.5 V
56
-6 V
-7 V
44
32
20
-8 V
-10 V
-5 V
-4.5 V
0
1
2
3
4
5
0
10
20
30
40
50
60
70
-VDSꢀ[V]
-IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
50
100
40
30
20
10
80
175 °C
60
40
25 °C
20
0
25 °C
175 °C
0
2
3
4
5
6
7
6
7
8
9
10
-VGSꢀ[V]
-VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=-35ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2019-03-28
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
IPD380P06NM
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.4
3.50
2.0
1.6
1.2
0.8
0.4
0.0
3.25
3.00
2.75
2.50
2.25
2.00
-17000 µA
-1700 µA
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=-35ꢀA,ꢀVGS=-10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
25 °C, max
175 °C
175 °C, max
Ciss
103
102
101
102
101
100
Coss
Crss
0
10
20
30
40
50
60
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
-VDSꢀ[V]
-VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2019-03-28
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
IPD380P06NM
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
-12 V
-30 V
-48 V
8
6
4
2
0
25 °C
101
100 °C
150 °C
100
100
101
102
103
0
10
20
30
40
50
60
70
tAVꢀ[µs]
-Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=-35ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
71
69
67
65
63
61
59
57
55
-80
-40
0
40
80
120
160
200
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=-250ꢀµA
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2019-03-28
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
IPD380P06NM
5ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00003328
MILLIMETERS
DIM
INCHES
MIN
2.16
0.00
0.64
0.65
4,95
0.46
0.40
5.97
5.02
6.35
4.32
MAX
2.41
0.15
0.89
1.15
5.50
0.61
0.98
6.22
5.84
6.73
5.21
MIN
MAX
0.095
0.006
0.035
0.045
0.217
0.024
0.039
0.245
0.230
0.265
0.205
0
A
A1
b
0.085
0.000
0.025
0.026
0.195
0.018
0.016
0.235
0.198
0.250
0.185
SCALE
2.5
b2
b3
c
0
2.5
5mm
c2
D
EUROPEAN PROJECTION
D1
E
E1
e
2.29 (BSC)
0.090 (BSC)
0.180 (BSC)
3
4.57 (BSC)
3
e1
N
ISSUE DATE
05-02-2016
H
9.40
1.18
0.89
0.51
10.48
0.370
0.046
0.035
0.020
0.413
L
1.78
1.27
1.02
0.070
0.050
0.040
REVISION
06
L3
L4
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ252-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2019-03-28
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
IPD380P06NM
RevisionꢀHistory
IPD380P06NM
Revision:ꢀ2019-03-28,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2019-03-28
Trademarks
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Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2019-03-28
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