IPD50N08S413ATMA1 [INFINEON]
Power Field-Effect Transistor, 50A I(D), 80V, 0.0132ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO252-3-313, 3/2 PIN;
| 型号： | IPD50N08S413ATMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 50A I(D), 80V, 0.0132ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO252-3-313, 3/2 PIN 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：271K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD50N08S4-13
OptiMOS™-T2 Power-Transistor
Product Summary
VDS
80
13.2
50
V
RDS(on),max
ID
mW
A
Features
PG-TO252-3-313
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPD50N08S4-13
PG-TO252-3-313 4N0813
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
50
Parameter
Symbol
Conditions
Unit
Continuous drain current1)
I D
T C=25°C, V GS=10V
A
T C=100°C, V GS=10V2)
50
Pulsed drain current2)
I D,pulse
E AS
T C=25°C
200
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
I D=25A
76
31
mJ
A
I AS
-
V GS
-
±20
V
P tot
T C=25°C
Power dissipation
72
W
°C
T j, T stg
Operating and storage temperature
-
-55 ... +175
Rev. 1.0
page 1
2014-06-30
IPD50N08S4-13
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
R thJC
R thJA
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
-
-
2.1
62
40
K/W
minimal footprint
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=33µA
Drain-source breakdown voltage
Gate threshold voltage
80
-
-
V
2.0
3.0
4.0
V DS=80V, V GS=0V,
T j=25°C
I DSS
Zero gate voltage drain current
-
-
0.01
5
1
µA
V DS=80V, V GS=0V,
T j=125°C2)
100
I GSS
V GS=20V, V DS=0V
Gate-source leakage current
-
-
-
100 nA
R DS(on) V GS=10V, I D=50A
Drain-source on-state resistance
11.2
13.2
mW
Rev. 1.0
page 2
2014-06-30
IPD50N08S4-13
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
1316
511
29
1711 pF
664
V GS=0V, V DS=25V,
f =1MHz
58
5.0
-
-
-
-
ns
3.6
V DD=40V, V GS=10V,
I D=50A, R G=3.5W
t d(off)
t f
Turn-off delay time
Fall time
6.4
11.8
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
6.9
4.5
19
9.0
9
nC
Q gd
V DD=64V, I D=50A,
V GS=0 to 10V
Q g
30
-
V plateau
Gate plateau voltage
5.0
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current1)
I S
-
-
-
-
50
T C=25°C
I S,pulse
200
V GS=0V, I F=50A,
T j=25°C
V SD
Diode forward voltage
Reverse recovery time1)
Reverse recovery charge1)
-
-
-
0.9
74
49
1.3
V
V R=50V, I F=I S,
di F/dt =100A/µs
t rr
-
-
ns
nC
Q rr
1) Current is limited by bondwire; with an R thJC = 2.1K/W the chip is able to carry 85A at 25°C.
2) Specified by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2014-06-30
IPD50N08S4-13
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS = 10 V
80
70
60
50
40
30
20
10
0
60
50
40
30
20
10
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(V DS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
101
1000
100
10
1 µs
100
0.5
10 µs
100 µs
1 ms
0.1
0.05
10-1
0.01
single pulse
10-2
1
0.1
1
10
100
VDS [V]
tp [s]
Rev. 1.0
page 4
2014-06-30
IPD50N08S4-13
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
200
30
5 V
5.5 V
180
10 V
160
140
120
100
80
25
20
15
7V
6 V
6 V
7 V
60
5.5 V
5 V
40
20
10 V
0
10
0
0
2
4
6
20
40
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 50 A; V GS = 10 V
200
180
160
140
120
100
80
22
18
14
10
6
-55 °C
25 °C
175 °C
60
40
20
0
2.5
4.5
6.5
-60
-20
20
60
100
140
180
VGS [V]
Tj [°C]
Rev. 1.0
page 5
2014-06-30
IPD50N08S4-13
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
104
3.5
3.25
3
Ciss
103
330 µA
Coss
2.75
33 µA
102
2.5
Crss
2.25
2
1.75
1.5
101
0
20
40
VDS [V]
60
80
-60
-20
20
60
100
140
180
Tj [°C]
11 Typical forward diode characteristicis
12 Avalanche characteristics
I A S= f(t AV
IF = f(VSD)
)
parameter: T j
parameter: Tj(start)
103
100
102
25 °C
100 °C
150 °C
10
175 °C
101
25 °C
100
1
1
0
0.4
0.8
1.2
1.6
2
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.0
page 6
2014-06-30
IPD50N08S4-13
13 Avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j); I D = 15 A
V BR(DSS) = f(T j); I D = 1 mA
90
88
86
84
82
80
78
76
74
72
70
400
350
300
7.5 A
250
200
150
15 A
100
31 A
50
0
-55
-15
25
65
105
145
185
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 50 A pulsed
parameter: V DD
10
9
8
7
6
5
4
3
2
1
0
V GS
Q g
16 V
64 V
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
0
3
6
9
12
15
18
Qgate [nC]
Rev. 1.0
page 7
2014-06-30
IPD50N08S4-13
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2014
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2014-06-30
IPD50N08S4-13
Revision History
Version
Date
Changes
Revision 1.0
30.06.2014 Final data sheet
Rev. 1.0
page 9
2014-06-30
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