IPD60R600CPBT [INFINEON]
Power Field-Effect Transistor;
| 型号： | IPD60R600CPBT |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总10页 (文件大小：736K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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IPD60R600E6
600V CoolMOS E6 Power TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPD60R600E6BT
Power Field-Effect TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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3
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IPD60R600P6
英飞凌 CoolMOS™ P6 超结 MOSFET 系列旨在实现更高的系统效率，同时易于在 CoolMOS™ P6 中设计，填补了专注于提供最佳性能的技术与更专注于易用性的技术之间的空白。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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0
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IPD60R600P7
N-Channel MOSFET TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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IPD60R600P7ATMA1
Power Field-Effect Transistor, 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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0
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IPD60R600P7S
600V CoolMOS™ P7 超结 (SJ) MOSFET 是 600V CoolMOS™ P6 系列的后续产品。该产品继续在设计过程中的高效率与易用性之间保持平衡。第 7 代 CoolMOS™ 平台具有同类中较为出色的R onxA 和固有低栅极电荷 (Q G)，确保高效率。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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IPD60R600P7SAUMA1
Power Field-Effect Transistor, 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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IPD60R750E6
600V CoolMOS E6 Power TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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IPD60R750E6AT
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IPD60R750E6BTMA1
Power Field-Effect Transistor, 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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IPD60R800CEAUMA1
Power Field-Effect Transistor, 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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0
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IPD60R950C6
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138
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IPD60R950C6AT
Power Field-Effect Transistor,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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0
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IPD60R950C6ATMA1
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0
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IPD60R950C6BT
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IPD640N06LG
OptiMOS㈢ Power-TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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IPD640N06LG_08
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IPD650P06NM
OptiMOS™ P-channel MOSFETs 60V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal and logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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