IPD650P06NMATMA1 [INFINEON]
Power Field-Effect Transistor, 22A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2;
| 型号： | IPD650P06NMATMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 22A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：908K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD650P06NM
MOSFET
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
D-PAK
Features
tab
•ꢀP-Channel
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
•ꢀ100%ꢀavalancheꢀtested
•ꢀNormalꢀLevel
•ꢀEnhancementꢀmode
1
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
3
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Drain
tab
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Gate
Pin 1
Parameter
Value
Unit
Source
Pin 3
VDS
-60
V
RDS(on),max
ID
65
mΩ
A
-22
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPD650P06NM
PG-TO 252-3
650P06NM
-
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2019-04-02
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
IPD650P06NM
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2019-04-02
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
IPD650P06NM
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTC=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-22
-17
VGS=-10ꢀV,ꢀTC=25ꢀ°C
VGS=-10ꢀV,ꢀTC=100ꢀ°C
Continuous drain current
ID
A
Pulsed drain current1)
Avalanche energy, single pulse2)
Gate source voltage
ID,pulse
EAS
-
-
-
-
-
-88
329
20
A
TC=25ꢀ°C
-
mJ
V
ID=-22ꢀA,ꢀRGS=25ꢀΩ
VGS
Ptot
-20
-
-
Power dissipation
83
W
TC=25ꢀ°C
IEC climatic category; DIN IEC 68-1:
55/175/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJA
-
-
-
1.8
°C/W -
°C/W -
Device on PCB,
-
75
6 cm² cooling area3)
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
-60
Typ.
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
-
V
V
VGS=0ꢀV,ꢀID=-250ꢀµA
VDS=VGS,ꢀID=-1040ꢀµA
-2.1
-3
-4
-
-
-0.1
-10
-1
-100
VDS=-60ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=-60ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
IDSS
µA
nA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IGSS
RDS(on)
RG
-
-
-
-
-10
52
5
-100
VGS=-20ꢀV,ꢀVDS=0ꢀV
65
-
mΩ VGS=-10ꢀV,ꢀID=-22ꢀA
Ω
-
Transconductance
gfs
21
-
S
|VDS|≥2|ID|RDS(on)max,ꢀID=-22ꢀA
1) See Diagram 3 for more detailed information
2) See Diagram 13 for more detailed information
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2019-04-02
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
IPD650P06NM
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
1600
220
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
-
-
-
pF
pF
pF
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz
Output capacitance
Reverse transfer capacitance
54
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-11ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
12
14
33
12
-
-
-
-
ns
ns
ns
ns
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-11ꢀA,
RG,ext=1.6ꢀΩ
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-11ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-11ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ
Values
Typ.
-9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=-30ꢀV,ꢀID=-22ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-22ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-22ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-22ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-22ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-22ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀVGS=0ꢀV
Qg(th)
Qgd
-5
-15
Qsw
-19
Gate charge total
Qg
-39
Gate plateau voltage
Output charge
Vplateau
Qoss
-5.5
-28
nC
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-22
-88
-1.2
-
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
-0.9
39
V
VGS=0ꢀV,ꢀIF=-22ꢀA,ꢀTj=25ꢀ°C
VR=-30ꢀV,ꢀIF=-22ꢀA,ꢀdiF/dt=-100ꢀA/µs
VR=-30ꢀV,ꢀIF=-22ꢀA,ꢀdiF/dt=-100ꢀA/µs
Reverse recovery time
Reverse recovery charge
ns
nC
Qrr
-83
-
1) See diagram ,Gate charge waveforms, for gate charge parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2019-04-02
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
IPD650P06NM
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
100
24
90
80
70
60
50
40
30
20
10
0
20
16
12
8
4
0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
TC[°C]
TC[°C]
Ptot=f(TC)
ID=f(TC);ꢀ|VGS|≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
102
101
1 µs
100 µs
101
100
1 ms
0.5
0.2
0.1
0.05
100
10 ms
DC
10-1
0.02
0.01
single pulse
10-1
10-2
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
-VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2019-04-02
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
IPD650P06NM
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
60
140
-10 V
-8 V
-7 V
120
50
40
30
20
10
0
100
-5 V
-6 V
-4.5 V
-6 V
80
-7 V
-8 V
-10 V
60
40
20
0
-5 V
-4.5 V
0
1
2
3
4
5
0
10
20
30
40
50
-VDSꢀ[V]
-IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
30
160
140
25
20
15
10
120
175 °C
100
80
60
25 °C
40
20
0
5
175 °C
25 °C
0
0
1
2
3
4
5
6
7
6
7
8
9
10
-VGSꢀ[V]
-VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=-22ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2019-04-02
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
IPD650P06NM
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.4
3.5
2.0
1.6
1.2
0.8
0.4
0.0
3.0
2.5
2.0
-10400 µA
-1040 µA
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=-22ꢀA,ꢀVGS=-10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
102
25 °C
25 °C, max
175 °C
175 °C, max
Ciss
103
102
101
101
Coss
Crss
100
10-1
0
10
20
30
40
50
60
0.00
0.25
0.50
0.75
1.00
1.25
1.50
-VDSꢀ[V]
-VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2019-04-02
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
IPD650P06NM
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
-12 V
-30 V
-48 V
8
6
4
2
0
101
25 °C
100 °C
100
150 °C
103
100
101
102
0
5
10
15
20
25
30
35
40
tAVꢀ[µs]
-Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=-22ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
68
66
64
62
60
58
56
-80
-40
0
40
80
120
160
200
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=-250ꢀµA
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2019-04-02
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
IPD650P06NM
5ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00003328
MILLIMETERS
DIM
INCHES
MIN
2.16
0.00
0.64
0.65
4,95
0.46
0.40
5.97
5.02
6.35
4.32
MAX
2.41
0.15
0.89
1.15
5.50
0.61
0.98
6.22
5.84
6.73
5.21
MIN
MAX
0.095
0.006
0.035
0.045
0.217
0.024
0.039
0.245
0.230
0.265
0.205
0
A
A1
b
0.085
0.000
0.025
0.026
0.195
0.018
0.016
0.235
0.198
0.250
0.185
SCALE
2.5
b2
b3
c
0
2.5
5mm
c2
D
EUROPEAN PROJECTION
D1
E
E1
e
2.29 (BSC)
0.090 (BSC)
0.180 (BSC)
3
4.57 (BSC)
3
e1
N
ISSUE DATE
05-02-2016
H
9.40
1.18
0.89
0.51
10.48
0.370
0.046
0.035
0.020
0.413
L
1.78
1.27
1.02
0.070
0.050
0.040
REVISION
06
L3
L4
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ252-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2019-04-02
OptiMOSTMꢀPowerꢀTransistor,ꢀ-60ꢀV
IPD650P06NM
RevisionꢀHistory
IPD650P06NM
Revision:ꢀ2019-04-02,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2019-04-02
Trademarks
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Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2019-04-02
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