IPD65R250E6XTMA1 [INFINEON]
Power Field-Effect Transistor, 650V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, DPAK-3;
| 型号： | IPD65R250E6XTMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 650V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, DPAK-3 开关 脉冲 晶体管 |
| 文件： | 总15页 (文件大小：1688K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
CoolMOS™ꢀE6ꢀ650V
650VꢀCoolMOS™ꢀE6ꢀPowerꢀTransistor
IPD65R250E6
DataꢀSheet
Rev.ꢀ2.2
Final
Industrialꢀ&ꢀMultimarket
650VꢀCoolMOS™ꢀE6ꢀPowerꢀTransistor
IPD65R250E6
DPAK
1ꢀꢀꢀꢀꢀDescription
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
tab
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀE6ꢀseriesꢀcombinesꢀthe
experienceꢀofꢀtheꢀleadingꢀSJꢀMOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.
TheꢀresultingꢀdevicesꢀprovideꢀallꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSJꢀMOSFET
whileꢀnotꢀsacrificingꢀeaseꢀofꢀuse.ꢀExtremelyꢀlowꢀswitchingꢀandꢀconduction
lossesꢀmakeꢀswitchingꢀapplicationsꢀevenꢀmoreꢀefficient,ꢀmoreꢀcompact,
lighterꢀandꢀcooler.
2
1
3
Features
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss
•ꢀVeryꢀhighꢀcommutationꢀruggedness
•ꢀEasyꢀtoꢀuse/drive
Drain
Pin 2
•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound
•ꢀQualifiedꢀforꢀindustrialꢀgradeꢀapplicationsꢀaccordingꢀtoꢀJEDECꢀ(J-STD20
andꢀJESD22)
Gate
Pin 1
Source
Pin 3
Applications
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀPWM
stagesꢀforꢀe.g.ꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTV,ꢀLighting,ꢀServer,
TelecomꢀandꢀUPS.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj max
RDS(on),max
Qg,typ
Value
700
0.25
45
Unit
V
Ω
nC
A
ID,pulse
46
Eoss @ 400V
Body diode di/dt
3.7
µJ
500
A/µs
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPD65R250E6
PG-TO 252
65E6250
see Appendix A
Final Data Sheet
2
Rev.ꢀ2.2,ꢀꢀ2013-07-30
650VꢀCoolMOS™ꢀE6ꢀPowerꢀTransistor
IPD65R250E6
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
3
Rev.ꢀ2.2,ꢀꢀ2013-07-30
650VꢀCoolMOS™ꢀE6ꢀPowerꢀTransistor
IPD65R250E6
2ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
16.1
11.3
46
Continuous drain current 1)
IꢀD
A
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
Pulsed drain current 2)
IꢀD‚pulse
EAS
A
TCꢀ=ꢀ25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
290
0.44
2.4
mJ
mJ
A
IDꢀ=ꢀ2.4A,ꢀVDDꢀ=ꢀ50V
IDꢀ=ꢀ2.4A,ꢀVDDꢀ=ꢀ50V
EAR
IꢀAR
dv/dt
VGS
50
V/ns VDSꢀ=ꢀ0ꢀ...ꢀ400V
-20
-30
-55
20
V
static
30
AC (f > 1 Hz)
Operating and storage temperature
Continuous diode forward current
Diode pulse current
Tj‚Tstg
IꢀS
150
17.9
46
°C
A
TCꢀ=ꢀ25°C
TCꢀ=ꢀ25°C
IꢀS‚pulse
dv/dt
dif/dt
Ptot
A
Reverse diode dv/dt 3)
15
V/ns
A/µs
W
VDSꢀ=ꢀ0ꢀ...ꢀ400V,ꢀISDꢀ≤ꢀID,
Tjꢀ=ꢀ25°C
Maximum diode commutation speed
Power dissipation (non FullPAK)
500
208
Tc = 25ºC
1) Limited by Tj max. Maximum duty cycle D=0.75
2) Pulse width tp limited by Tj max
3)
V
<V(BR)DSS, Tj<Tj max, identical low and high side switch with same Rg
peak
Final Data Sheet
4
Rev.ꢀ2.2,ꢀꢀ2013-07-30
650VꢀCoolMOS™ꢀE6ꢀPowerꢀTransistor
IPD65R250E6
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀDPAK
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
Thermal resistance, junction - case
RthJC
0.6
°C/W
°C/W
SMD version, device on PCB,
minimal footprint
Thermal resistance, junction - ambient 1) RthJA
62
SMD version, device on PCB,
6cm² cooling area
35
Soldering temperature, wave- &
Tsold
260
°C
reflow MSL
reflowsoldering allowed
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection.
PCB is vertical without air stream cooling.
Final Data Sheet
5
Rev.ꢀ2.2,ꢀꢀ2013-07-30
650VꢀCoolMOS™ꢀE6ꢀPowerꢀTransistor
IPD65R250E6
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
650
2.5
Typ.
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
IꢀDSS
V
VGSꢀ=ꢀ0V,ꢀIDꢀ=ꢀ1mA
3
3.5
1
V
VDSꢀ=ꢀVGS,ꢀIDꢀ=ꢀ0.4mA
Zero gate voltage drain current
µA
VDSꢀ=ꢀ650V,ꢀVGSꢀ=ꢀ0V,ꢀTjꢀ=ꢀ25°C
VDSꢀ=ꢀ650V,ꢀVGSꢀ=ꢀ0V,ꢀTjꢀ=ꢀ150°C
VGSꢀ=ꢀ20V,ꢀVDSꢀ=ꢀ0V
10
Gate-source leakage current
IꢀGSS
100
nA
Drain-source on-state resistance
RDS(on)
0.230 0.25
Ω
VGSꢀ=ꢀ10V,ꢀIDꢀ=ꢀ4.4A,ꢀTjꢀ=ꢀ25°C
VGSꢀ=ꢀ10V,ꢀIDꢀ=ꢀ4.4A,ꢀTjꢀ=ꢀ150°C
fꢀ=ꢀ1MHz,ꢀopenꢀdrain
0.590
7
Gate resistance
RG
Ω
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
950
60
Max.
Input capacitance
Output capacitance
Ciss
pF
pF
VGSꢀ=ꢀ0V,ꢀVDSꢀ=ꢀ100V,ꢀfꢀ=ꢀ1MHz
Coss
Effective output capacitance, energy
related 1)
Co(er)
40
pF
pF
VGSꢀ=ꢀ0V,ꢀVDSꢀ=ꢀ0ꢀ...ꢀ480V
Effective output capacitance, time related
2)
IDꢀ=ꢀconstant,ꢀVGSꢀ=ꢀ0V,
VDSꢀ=ꢀ0ꢀ...ꢀ480V
Co(tr)
183
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
11
9
ns
ns
ns
ns
VDDꢀ=ꢀ400V,ꢀVGSꢀ=ꢀ13V,ꢀIDꢀ=ꢀ6.6A,
RGꢀ=ꢀ3.4Ω
Turn-off delay time
Fall time
76
9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
5
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
nC
nC
nC
V
VDDꢀ=ꢀ480V,ꢀIDꢀ=ꢀ6.6A,
VGSꢀ=ꢀ0ꢀtoꢀ10V
Qgd
24
Qg
45
Gate plateau voltage
Vplateau
5.5
1)
C
C
is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
o(er)
2)
o(tr)
Final Data Sheet
6
Rev.ꢀ2.2,ꢀꢀ2013-07-30
650VꢀCoolMOS™ꢀE6ꢀPowerꢀTransistor
IPD65R250E6
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
0.9
260
2.4
18
Max.
Diode forward voltage
VSD
trr
V
VGSꢀ=ꢀ0V,ꢀIFꢀ=ꢀ6.6A,ꢀTjꢀ=ꢀ25°C
Reverse recovery time
ns
µC
A
VRꢀ=ꢀ400V,ꢀIFꢀ=ꢀ6.6A,
diF/dtꢀ=ꢀ100A/µs
Reverse recovery charge
Peak reverse recovery current
Qrr
Iꢀrrm
Final Data Sheet
7
Rev.ꢀ2.2,ꢀꢀ2013-07-30
650VꢀCoolMOS™ꢀE6ꢀPowerꢀTransistor
IPD65R250E6
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
250
102
1 µs
200
150
100
50
10 µs
101
100 µs
1 ms
100
DC/10 ms
10-1
0
10-2
0
40
80
120
160
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀVGS>ꢀ7V;D=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
102
101
0.5
0.2
0.1
1 µs
101
10 µs
0.05
100
0.02
100 µs
1 ms
0.01
100
single pulse
DC/10 ms
10-1
10-1
10-2
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀVGS>ꢀ7V;<ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
8
Rev.ꢀ2.2,ꢀꢀ2013-07-30
650VꢀCoolMOS™ꢀE6ꢀPowerꢀTransistor
IPD65R250E6
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
60
35
20 V
20 V
10 V
10 V
30
50
8 V
8 V
7 V
7 V
6 V
25
20
15
10
5
40
6 V
5.5 V
5.5 V
5 V
30
5 V
4.5 V
4.5 V
20
10
0
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
1.00
0.70
0.90
0.80
0.70
0.60
0.60
0.50
0.40
98%
typ
0.30
0.20
0.10
0.00
5 V
5.5 V
6 V
6.5 V
10V
0.50
0.40
0.30
0.20
0
5
10
15
20
-60
-20
20
60
100
140
180
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=4,4ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
9
Rev.ꢀ2.2,ꢀꢀ2013-07-30
650VꢀCoolMOS™ꢀE6ꢀPowerꢀTransistor
IPD65R250E6
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:Typ.ꢀgateꢀcharge
50
10
25 °C
45
40
35
30
25
20
15
10
5
9
120 V
480 V
8
7
6
5
4
3
2
1
0
150 °C
0
0
2
4
6
8
10
0
10
20
30
40
50
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀ|VDS|=20V;
VGS=f(Qgate);ꢀID=6.6ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
350
300
250
200
150
100
50
125 °C
25 °C
101
100
10-1
0
0.0
0.5
1.0
1.5
0
40
80
120
160
200
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=2,4ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
10
Rev.ꢀ2.2,ꢀꢀ2013-07-30
650VꢀCoolMOS™ꢀE6ꢀPowerꢀTransistor
IPD65R250E6
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
760
104
740
720
700
680
660
640
620
600
580
560
540
Ciss
103
102
Coss
Crss
101
100
-60
-20
20
60
100
140
180
0
100
200
300
400
500
600
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
4
3
2
1
0
0
100
200
300
400
500
600
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
11
Rev.ꢀ2.2,ꢀꢀ2013-07-30
650VꢀCoolMOS™ꢀE6ꢀPowerꢀTransistor
IPD65R250E6
6ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V,I
VDS
Rg1
VDS(peak)
VDS
trr
VDS
IF
tF
tS
dIF / dt
Rg 2
IF
t
10%Irrm
Q
F
Q
S
IF
dI / dt
rr
trr =tF +tS
rr
Irrm
Q =QF +Q
S
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VD
VDS
VDS
VDS
ID
Final Data Sheet
12
Rev.ꢀ2.2,ꢀꢀ2013-07-30
650VꢀCoolMOS™ꢀE6ꢀPowerꢀTransistor
IPD65R250E6
7ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ252,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
13
Rev.ꢀ2.2,ꢀꢀ2013-07-30
650VꢀCoolMOS™ꢀE6ꢀPowerꢀTransistor
IPD65R250E6
8ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀC6ꢀProductꢀBrief:ꢀwww.infineon.com
• IFXꢀC6ꢀPortfolio:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀWebpage:ꢀwww.infineon.com
• IFXꢀDesignꢀTools:ꢀwww.infineon.com
Final Data Sheet
14
Rev.ꢀ2.2,ꢀꢀ2013-07-30
650VꢀCoolMOS™ꢀE6ꢀPowerꢀTransistor
IPD65R250E6
RevisionꢀHistory
IPD65R250E6
Revision:ꢀ2013-07-30,ꢀRev.ꢀ2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2.2
release of final datasheet
2011-07-08
2013-07-30
add halogen free mold compound logo
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Editionꢀ2011-08-01
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
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LegalꢀDisclaimer
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWith
respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication
ofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout
limitation,ꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
15
Rev.ꢀ2.2,ꢀꢀ2013-07-30
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