IPDQ60R010S7A [INFINEON]
汽车级 600V CoolMOS™ S7A 超结 MOSFET 系列符合 AEC-Q101 标准，经优化后可显著降低导通损耗，具备高压超结 MOSFET 市场领域中的较低 RDS(on)。该系列产品具备前所未有的 RDS(on) 与价格优势，品质因数出色，尤为适用于高压电熔丝、高压电子断开装置和有源线路配置中的车载充电器 PFC 级。;
| 型号： | IPDQ60R010S7A |
| 厂家： | 
Infineon |
| 描述： | 汽车级 600V CoolMOS™ S7A 超结 MOSFET 系列符合 AEC-Q101 标准，经优化后可显著降低导通损耗，具备高压超结 MOSFET 市场领域中的较低 RDS(on)。该系列产品具备前所未有的 RDS(on) 与价格优势，品质因数出色，尤为适用于高压电熔丝、高压电子断开装置和有源线路配置中的车载充电器 PFC 级。 电子 高压 功率因数校正 电熔丝 装置 |
| 文件： | 总14页 (文件大小：1410K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPDQ60R010S7A
MOSFET
PG-HDSOP-22-1
600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice
IPDQ60R010S7AꢀisꢀaꢀhighꢀvoltageꢀpowerꢀMOSFET,ꢀdesignedꢀasꢀstatic
switchꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀpioneeredꢀbyꢀInfineon
Technologies.
22
12
TAB
IPDQ60R010S7AꢀcombinesꢀtheꢀexperienceꢀofꢀtheꢀleadingꢀSJꢀMOSFET
supplierꢀwithꢀhighꢀclassꢀinnovationꢀenablingꢀlowꢀRDS(on)ꢀinꢀQDPAKꢀpackage.
TheꢀS7Aꢀseriesꢀisꢀoptimisedꢀforꢀlowꢀfrequencyꢀswitchingꢀandꢀhighꢀcurrent
applicationꢀlikeꢀcircuitꢀbreakers.
1
11
Features
•ꢀOptimizedꢀforꢀlowꢀswitchingꢀfrequencyꢀinꢀhigh-endꢀapplicationsꢀ(circuit
breakersꢀandꢀdiodeꢀparalleling/replacementꢀinꢀbridgeꢀrectifiers).
•ꢀꢀS7AꢀtechnologyꢀenablesꢀbestꢀinꢀclassꢀRDS(on)ꢀinꢀsmallestꢀfootprint.
•ꢀKelvinꢀSourceꢀpinꢀimprovesꢀswitchingꢀperformanceꢀatꢀhighꢀcurrent.
•ꢀQDPAKꢀ(PG-HDSOP-22-1)ꢀpackageꢀisꢀMSL1ꢀcompliant,ꢀtotalꢀPb-free,
hasꢀeasyꢀvisualꢀinspectionꢀleads.
Drain
Pin 12-22, Tab
*1
Gate
Pin 1
Driver
Source
Pin 2
Power
Source
Pin 3-11
Benefits
*1: Internal body diode
•ꢀS7AꢀenablingꢀlowꢀRDS(on)ꢀforꢀhighꢀconstantꢀcurrent.
•ꢀIncreasedꢀperformanceꢀbyꢀusingꢀMOSFETꢀinsteadꢀofꢀdiodeꢀinꢀthe
applicationꢀ(e.g.ꢀsynchronousꢀrectification).
•ꢀS7Aꢀcanꢀreachꢀ10mΩꢀinꢀQDPAKꢀ315mm2ꢀfootprint.
•ꢀReducedꢀparasiticꢀsourceꢀinductanceꢀbyꢀKelvinꢀSourceꢀimprovesꢀstability
forꢀextremeꢀhighꢀcurrentꢀhandlingꢀandꢀeaseꢀofꢀuseꢀdueꢀtoꢀlessꢀringing.
•ꢀImprovedꢀthermalsꢀenableꢀSMDꢀQDPAKꢀpackageꢀtoꢀbeꢀusedꢀinꢀhigh
currentꢀdesigns.
Potentialꢀapplications
Circuitꢀbreakersꢀ(HVꢀBatteryꢀdisconnectꢀswitch,ꢀDCꢀandꢀACꢀlowꢀfrequency
switch,ꢀHVꢀE-fuse)ꢀandꢀdiodeꢀparalleling/replacementꢀforꢀhigh
power/performanceꢀapplications.
Productꢀvalidation
QualifiedꢀaccordingꢀtoꢀAECꢀQ101
Pleaseꢀnote:ꢀTheꢀsourceꢀandꢀsenseꢀsourceꢀpinsꢀareꢀnotꢀexchangeable.
Theirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.ꢀForꢀparallelingꢀ4pinꢀMOSFET
devicesꢀtheꢀplacementꢀofꢀtheꢀgateꢀresistorꢀisꢀgenerallyꢀrecommendedꢀtoꢀbe
onꢀtheꢀDriverꢀSourceꢀinsteadꢀofꢀtheꢀGate.ꢀForꢀproductionꢀpartꢀapproval
processꢀ(PPAP)ꢀreleaseꢀweꢀproposeꢀtoꢀshareꢀapplicationꢀrelated
informationꢀduringꢀanꢀearlyꢀdesignꢀphaseꢀtoꢀavoidꢀdelaysꢀinꢀPPAPꢀrelease.
PleaseꢀcontactꢀInfineonꢀsalesꢀoffice.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
RDS(on),max
Qg,typ
Value
Unit
mΩ
nC
V
10
318
0.82
801
VSD
Pulsed ISD, IDS
A
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPDQ60R010S7A
PG-HDSOP-22
60A010S7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2021-08-20
600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice
IPDQ60R010S7A
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2021-08-20
600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice
IPDQ60R010S7A
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
TC=140°C
Current is limited by Tj max = 150°C;
Lower case temp does increase
Drain current rating
ID
-
-
50
A
current capability
Pulsed drain current1)
ID,pulse
EAS
IAS
-
-
-
-
-
-
-
-
-
-
801
616
6.3
20
A
TC=25°C
Avalanche energy, single pulse
Avalanche current, single pulse
MOSFET dv/dt ruggedness2)
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
-
mJ
A
ID=6.3A; VDD=50V; see table 10
-
-
dv/dt
VGS
VGS
Ptot
-
V/ns VDS=ꢀ0Vꢀtoꢀ300V
-20
-30
-
20
V
static
30
V
AC (f>1 Hz)
694
150
150
W
°C
°C
TC=25°C
Storage temperature
Tstg
Tj
-55
-40
-
-
Operating junction temperature
Extended operating junction
temperature
Tj
150
-
-
-
175
n.a.
°C
≤50 h in the application lifetime
Mounting torque
-
Ncm -
TC=140°C
Current is limited by Tj max = 150°C;
Lower case temp does increase
current capability
Diode forward current rating
IS
-
-
50
A
Diode pulse current1)
Reverse diode dv/dt3)
IS,pulse
-
-
-
-
801
5
A
TC=25°C
VDS=0ꢀtoꢀ300V,ꢀISD<=50A,ꢀTj=25°Cꢀꢀꢀ
dv/dt
V/ns
see table 8
VDS=0ꢀtoꢀ300V,ꢀISD<=50A,ꢀTj=25°Cꢀꢀꢀ
Maximum diode commutation speed
Insulation withstand voltage
dif/dt
-
-
-
-
1000 A/µs
n.a.
see table 8
VISO
V
Vrms,ꢀTC=25°C,ꢀt=1min
1) Pulse width tp limited by Tj,max
2) The dv/dt has to be limited by appropriate gate resistor
3) Identical low side and high side switch
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2021-08-20
600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice
IPDQ60R010S7A
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
0.18
62
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
°C/W device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
°C/W layer, 70µm thickness) copper area.
Tap exposed to air. PCB is vertical
without air stream cooling.
Thermal resistance, junction - ambient
for SMD version
RthJA
-
-
45
-
55
Soldering temperature, reflow soldering
allowed
Tsold
260
°C
reflow MSL1
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2021-08-20
600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice
IPDQ60R010S7A
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
The CoolMOS mentioned in this datasheet shall not be operated in linear mode.
For any questions in this regard, please contact Infineon sales office.
For applications with applied blocking voltage >70% of the specified blocking voltage, it is required that the customer
evaluates the impact of cosmic radiation effect in early design phase and contacts the Infineon sales office for the
necessary technical support by Infineon
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
3.5
Typ.
-
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
V
V
VGS=0V,ꢀID=1mA
4.0
4.5
VDS=VGS,ꢀID=3.08mA
-
-
-
80
8
-
VDS=600V,ꢀVGS=0V,ꢀTj=25°C
VDS=600V,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
nA
Ω
IGSS
-
-
100
VGS=20V,ꢀVDS=0V
-
-
0.009 0.010
0.022
VGS=12V,ꢀID=50A,ꢀTj=25°C
VGS=12V,ꢀID=50A,ꢀTj=150°C
RDS(on)
RG
-
-
0.45
-
Ω
f=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
External parasitic elements (PCB layout) influence switching behavior significantly.
Stray inductances and coupling capacitances must be minimized.
For layout recommendations please use provided application notes or contact Infineon sales office.
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
Input capacitance
Output capacitance
Ciss
-
-
11987 -
pF
pF
VGS=0V,ꢀVDS=300V,ꢀf=250kHz
VGS=0V,ꢀVDS=300V,ꢀf=250kHz
Coss
187
643
-
-
Effective output capacitance, energy
related1)
Co(er)
-
pF
VGS=0V,ꢀVDS=0ꢀtoꢀ300V
Effective output capacitance, time
related2)
Co(tr)
Qoss
td(on)
-
-
-
5714
1714
50
-
-
-
pF
nC
ns
ID=constant,ꢀVGS=0V,ꢀVDS=0ꢀtoꢀ300V
VGS=0V,ꢀVDS=0ꢀtoꢀ300V
Output charge
VDD=300V,ꢀVGS=13V,ꢀID=50A,
RG=3.0Ω;ꢀseeꢀtableꢀ9
Turn-on delay time
VDD=300V,ꢀVGS=13V,ꢀID=50A,
RG=3.0Ω;ꢀseeꢀtableꢀ9
Rise time
tr
-
-
-
5
-
-
-
ns
ns
ns
VDD=300V,ꢀVGS=13V,ꢀID=50A,
RG=3.0Ω;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
180
9
VDD=300V,ꢀVGS=13V,ꢀID=50A,
RG=3.0Ω;ꢀseeꢀtableꢀ9
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ300V
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ300V
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2021-08-20
600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice
IPDQ60R010S7A
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
65
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=300V,ꢀID=50A,ꢀVGS=0ꢀtoꢀ12V
VDD=300V,ꢀID=50A,ꢀVGS=0ꢀtoꢀ12V
VDD=300V,ꢀID=50A,ꢀVGS=0ꢀtoꢀ12V
VDD=300V,ꢀID=50A,ꢀVGS=0ꢀtoꢀ12V
Qgd
106
Qg
318
Gate plateau voltage
Vplateau
5.4
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
0.82
-
V
VGS=0V,ꢀIF=50A,ꢀTj=25°C
VR=300V,ꢀIF=50A,ꢀdiF/dt=100A/µs;
see table 8
-
-
-
600
17
-
-
-
ns
VR=300V,ꢀIF=50A,ꢀdiF/dt=100A/µs;
see table 8
Reverse recovery charge
Qrr
Irrm
µC
A
VR=300V,ꢀIF=50A,ꢀdiF/dt=100A/µs;
see table 8
Peak reverse recovery current
55
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2021-08-20
600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice
IPDQ60R010S7A
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
700
103
1 µs
10 µs
100 µs
1 ms
10 ms
600
500
400
300
200
100
0
102
101
100
10-1
10-2
10-3
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
100
1 µs
10 µs
100 µs
1 ms
10 ms
102
101
100
10-1
0.5
0.2
0.1
0.05
10-1
10-2
10-3
10-2
0.02
0.01
single pulse
10-3
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2021-08-20
600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice
IPDQ60R010S7A
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
1200
800
20 V
20 V
700
600
500
400
300
200
100
0
12 V
1000
12 V
10 V
10 V
800
8 V
8 V
600
400
200
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.030
2.4
8 V
0.028
0.026
0.024
0.022
0.020
0.018
2.1
1.8
1.5
1.2
0.9
0.6
10 V
12 V
20 V
0
100
200
300
400
500
600
700
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=50.0ꢀA;ꢀVGS=12ꢀV
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2021-08-20
600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice
IPDQ60R010S7A
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
1200
12
25 °C
300 V
1000
10
8
800
120 V
600
400
200
0
150 °C
6
4
2
0
0
2
4
6
8
10
12
0
50
100
150
200
250
300
350
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=50.0ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
103
103
102
102
25 °C
125 °C
101
101
100
100
125 °C
25 °C
10-1
10-1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSDꢀ[V]
VSDꢀ[V]
IF=f(VSD);ꢀVGS=0ꢀV;ꢀparameter:ꢀTj
IF=f(VSD);ꢀVGS=12ꢀV;ꢀparameter:ꢀTj
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2021-08-20
600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice
IPDQ60R010S7A
Diagramꢀ13:ꢀAvalancheꢀenergy
Diagramꢀ14:ꢀDrain-sourceꢀbreakdownꢀvoltage
700
680
600
500
400
300
200
100
0
660
640
620
600
580
560
540
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Tjꢀ[°C]
Tjꢀ[°C]
EAS=f(Tj);ꢀID=6.3ꢀA;ꢀVDD=50ꢀV
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Diagramꢀ15:ꢀTyp.ꢀcapacitances
Diagramꢀ17:ꢀTyp.ꢀQossꢀoutputꢀcharge
106
1800
1500
1200
900
600
300
0
105
Ciss
104
103
102
101
Coss
Crss
0
50
100
150
200
250
300
0
50
100
150
200
250
300
VDSꢀ[V]
VDSꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Qoss=f(VDS);ꢀVGS=0ꢀV
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2021-08-20
600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice
IPDQ60R010S7A
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimesꢀ(ss)
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀloadꢀ(ss)
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2021-08-20
600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice
IPDQ60R010S7A
6ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00184650
REVISION
02
MILLIMETERS
DIMENSIONS
MIN.
2.20
MAX.
2.35
SCALE 5:1
A
A1
A2
b
0.00
0.15
0
1
2
3
4
5mm
0.89
1.10
0.50
0.70
c
0.46
0.58
EUROPEAN PROJECTION
D
15.30
10.23
14.90
11.91
15.50
10.43
15.10
12.11
D1
E
E1
e
1.14
22
N
ISSUE DATE
16.01.2018
H
20.86
1.20
21.06
1.40
L
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-HDSOP-22,ꢀdimensionsꢀinꢀmm
Final Data Sheet
12
Rev.ꢀ2.1,ꢀꢀ2021-08-20
600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice
IPDQ60R010S7A
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSꢀS7ꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀS7ꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀS7ꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
13
Rev.ꢀ2.1,ꢀꢀ2021-08-20
600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice
IPDQ60R010S7A
RevisionꢀHistory
IPDQ60R010S7A
Revision:ꢀ2021-08-20,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
Release of final version
2020-07-02
2021-08-20
Added extended operation temperature of 175°C for 50h, Change of wording regarding
breakdown voltage / cosmic ray
Trademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
Disclaimer
WeꢀListenꢀtoꢀYourꢀComments
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:
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Publishedꢀby
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81726ꢀMünchen,ꢀGermany
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AllꢀRightsꢀReserved.
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Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ
(“Beschaffenheitsgarantie”)ꢀ.
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
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technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
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Warnings
Dueꢀtoꢀtechnicalꢀrequirementsꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestionꢀplease
contactꢀyourꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
InfineonꢀTechnologiesꢀComponentsꢀmayꢀonlyꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀof
InfineonꢀTechnologies,ꢀifꢀaꢀfailureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support
deviceꢀorꢀsystem,ꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀareꢀintended
toꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbody,ꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.
Ifꢀtheyꢀfail,ꢀitꢀisꢀreasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
14
Rev.ꢀ2.1,ꢀꢀ2021-08-20
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