IPF05N03LBG [INFINEON]
Power Field-Effect Transistor, 90A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, PLASTIC, TO-252, 3 PIN;
| 型号： | IPF05N03LBG |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 90A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, PLASTIC, TO-252, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：393K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD05N03LB G
IPU05N03LB G
IPS05N03LB G
IPF05N03LB G
OptiMOS®2 Power-Transistor
Product Summary
Features
V DS
30
4.8
90
V
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
R DS(on),max
I D
mΩ
A
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
Type
IPD05N03LB G
IPS05N03LB G
IPF05N03LB G
IPU05N03LB G
Package
PG-TO252-3-11
Q67042-S4262
05N03LB
PG-TO251-3-11
On request
05N03LB
PG-TO252-3-23
On request
05N03LB
PG-TO251-3-1
On request
05N03LB
Ordering Code
Marking
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
T C=25 °C2)
I D
Continuous drain current
90
74
A
T C=100 °C
T C=25 °C3)
I D,pulse
Pulsed drain current
420
120
E AS
I D=90 A, R GS=25 Ω
Avalanche energy, single pulse
mJ
I D=90 A, V DS=20 V,
di /dt =200 A/µs,
Reverse diode dv /dt
dv /dt
6
kV/µs
T
j,max=175 °C
Gate source voltage4)
V GS
±20
94
V
P tot
T C=25 °C
Power dissipation
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
Rev. 1.3
page 1
2005-07-18
IPD05N03LB G
IPU05N03LB G
IPS05N03LB G
IPF05N03LB G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
-
1.6
75
50
K/W
R thJA
minimal footprint
6 cm2 cooling area5)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=1 mA
DS=V GS, I D=40 µA
Drain-source breakdown voltage
Gate threshold voltage
30
-
-
V
1.2
1.6
2
V
DS=30 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
T j=25 °C
V
DS=30 V, V GS=0 V,
100
T j=125 °C
I GSS
V
V
V
GS=20 V, V DS=0 V
GS=4.5 V, I D=50 A
GS=4.5 V, I D=50 A,
Gate-source leakage current
-
-
10
100 nA
R DS(on)
Drain-source on-state resistance
6.0
7.7
7.5
5.0
mΩ
-
-
5.8
4.1
SMD version
V
GS=10 V, I D=60 A
V
GS=10 V, I D=60 A,
-
-
3.9
1
4.8
SMD version
R G
g fs
Gate resistance
-
-
Ω
|V DS|>2|I D|R DS(on)max
I D=60 A
,
Transconductance
48
96
S
1) J-STD20 and JESD22
1) Current is limited by bondwire; with anR thJC=1.6 K/W the chip is able to carry 104 A.
3) See figure 3
4) T j,max=150 °C and duty cycle D <0.25 for V GS<-5 V
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2
Rev. 1.3
page 2
2005-07-18
IPD05N03LB G
IPU05N03LB G
IPS05N03LB G
IPF05N03LB G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C iss
-
-
-
-
-
-
-
2400
860
110
9
3200 pF
1100
V
GS=0 V, V DS=15 V,
C oss
Crss
t d(on)
t r
Output capacitance
f =1 MHz
Reverse transfer capacitance
160
14
10
42
7
ns
Rise time
7
V
DD=15 V, V GS=10 V,
I D=45 A, R G=2.7 Ω
t d(off)
t f
Turn-off delay time
Fall time
28
4.6
Gate Charge Characteristics6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q gs
Q g(th)
Q gd
Q sw
Q g
-
-
-
-
-
8
11
5.1
8
nC
3.9
5.1
9
V
V
DD=15 V, I D=45 A,
GS=0 to 5 V
13
25
Gate charge total
19
V plateau
Gate plateau voltage
-
3.3
-
V
V
V
DS=0.1 V,
Q g(sync)
Q oss
Gate charge total, sync. FET
Output charge
-
-
16
19
22
26
nC
GS=0 to 5 V
V
DD=15 V, V GS=0 V
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
78
A
T C=25 °C
I S,pulse
420
V
GS=0 V, I F=78.125 A,
V SD
Q rr
Diode forward voltage
-
-
0.93
-
1.2
15
V
T j=25 °C
V R=15 V, I F=I S,
di F/dt =400 A/µs
Reverse recovery charge
nC
6) See figure 16 for gate charge parameter definition
Rev. 1.3
page 3
2005-07-18
IPD05N03LB G
IPU05N03LB G
IPS05N03LB G
IPF05N03LB G
1 Power dissipation
2 Drain current
P
tot=f(T C)
120
100
80
I D=f(T C); V GS≥10 V
100
80
60
40
20
0
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJC=f(t p)
Z
parameter: D =t p/T
1000
10
limited by on-state
resistance
1 µs
0.5
1
10 µs
100
100 µs
0.2
0.1
DC
0.05
0.1
1 ms
0.02
single pulse
0.01
10
10 ms
0.01
1
0
0
0
0
0
0
1
0.001
0.1
1
10
100
10-6
10-5
10-4
10-3
p [s]
10-2
10-1
100
V
DS [V]
t
Rev. 1.3
page 4
2005-07-18
IPD05N03LB G
IPU05N03LB G
IPS05N03LB G
IPF05N03LB G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R
DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
200
180
12
3.2 V
3.5 V
4.5 V
3.8 V
10
8
10 V
160
140
120
100
80
4.1 V
4.5 V
4.1 V
6
3.8 V
4
10 V
60
3.5 V
3.2 V
40
2
20
3 V
2.8 V
0
0
0
1
2
3
0
20
40
60
80
100
V
DS [V]
I
D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
100
100
90
80
70
60
50
40
30
20
10
0
80
60
40
20
175 °C
25 °C
0
0
1
2
3
4
5
0
10
20
30
40
50
60
V
GS [V]
I
D [A]
Rev. 1.3
page 5
2005-07-18
IPD05N03LB G
IPU05N03LB G
IPS05N03LB G
IPF05N03LB G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)=f(T j); I D=60 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
10
9
2.5
8
2
1.5
1
7
400 µA
6
98 %
40 µA
5
typ
4
3
2
1
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
10000
1000
25 °C, 98%
Ciss
175 °C, 98%
Coss
25 °C
1000
100
10
175 °C
Crss
100
10
1
0
5
10
15
20
25
30
0.0
0.5
1.0
1.5
2.0
V
DS [V]
V
SD [V]
Rev. 1.3
page 6
2005-07-18
IPD05N03LB G
IPU05N03LB G
IPS05N03LB G
IPF05N03LB G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=45 A pulsed
V
I
parameter: Tj(start)
parameter: V DD
100
12
25 °C
15 V
100 °C
10
8
6 V
24 V
150 °C
10
6
4
2
1
1
0
0
10
100
1000
20
40
t
AV [µs]
Q
gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
38
36
34
32
30
28
26
24
22
20
V GS
Q g
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.3
page 7
2005-07-18
IPD05N03LB G
IPU05N03LB G
IPS05N03LB G
IPF05N03LB G
Package Outline
PG-TO252-3-11: Outline
Footprint:
Packaging:
Dimensions in mm
Rev. 1.3
page 8
2005-07-18
IPD05N03LB G
IPU05N03LB G
IPS05N03LB G
IPF05N03LB G
Package Outline
PG-TO252-3-23: Outline
Footprint:
Dimensions in mm
Rev. 1.3
page 9
2005-07-18
IPD05N03LB G
IPU05N03LB G
IPS05N03LB G
IPF05N03LB G
Package Outline
PG-TO251-3-11: Outline
PG-TO-251-3-1: Outline
Dimensions in mm
Rev. 1.3
page 10
2005-07-18
IPD05N03LB G
IPU05N03LB G
IPS05N03LB G
IPF05N03LB G
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.3
page 11
2005-07-18
相关型号：
IPF06N03LBG
Power Field-Effect Transistor, 50A I(D), 30V, 0.0061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, PLASTIC, TO-252, 3 PIN
INFINEON
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