IPG20N04S4L-07A [INFINEON]

车规级MOSFET;


型号：	IPG20N04S4L-07A
厂家：	Infineon
描述：	车规级MOSFET
文件：	总9页 (文件大小：197K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IPG20N04S4L-07A

OptiMOS™-T2 Power-Transistor

Product Summary

V_DS

7.2

R_DS(on),max

mΩ

I_D

Features

• Dual N-channel Logic Level - Enhancement mode

PG-TDSON-8-10

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

• Feasible for automatic optical inspection (AOI)

Type

Package

Marking

IPG20N04S4L-07A

PG-TDSON-8-10

4N04L07

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current

one channel active

T _C=25 °C, V_GS=10 V¹⁾

I _D

T _C=100 °C,

_GS=10 V²⁾

Pulsed drain current²⁾

one channel active

I _D,pulse

Avalanche energy, single pulse^{2, 4)}

Avalanche current, single pulse⁴⁾

Gate source voltage

E_AS

I _AS

I _D=10A

230

V_GS

±16

Power dissipation

one channel active

P_tot

T _C=25 °C

T _j, T _stg

Operating and storage temperature

-55 ... +175

°C

Rev. 1.0

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IPG20N04S4L-07A

Values

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Thermal characteristics²⁾

R _thJC

R _thJA

Thermal resistance, junction - case

SMD version, device on PCB

2.3

K/W

minimal footprint

100

6 cm²cooling area³⁾

Electrical characteristics, at T _j=25 °C, unless otherwise specified

Static characteristics

V_(BR)DSSV_GS=0 V, I _D= 1 mA

V_GS(th)V_DS=V_GS, I _D= 30µA

Drain-source breakdown voltage

Gate threshold voltage

1.2

1.7

2.2

V_DS=40 V, V_GS=0 V,

T _j=25 °C

Zero gate voltage drain current⁴⁾

I _DSS

0.01

µA

_DS=18 V, V_GS=0 V,

100

T _j=85 °C²⁾

Gate-source leakage current⁴⁾

I _GSS

V_GS=16 V, V_DS=0 V

100 nA

Drain-source on-state resistance⁴⁾

R _DS(on)V_GS=4.5 V, I _D=10 A

8.0

6.5

9.2

7.2

mΩ

_GS=10 V, I _D=17 A

Rev. 1.0

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2013-02-28

IPG20N04S4L-07A

Values

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Dynamic characteristics²⁾

Input capacitance⁴⁾

Output capacitance⁴⁾

Reverse transfer capacitance⁴⁾

Turn-on delay time

Rise time

C _iss

C _oss

C_rss

t _d(on)

t _r

3060

560

3980 pF

730

_GS=0 V, V_DS=25 V,

f =1 MHz

_DD=20 V, V_GS=10 V,

I _D=20 A, R _G,ext=11 Ω

t _d(off)

t _f

Turn-off delay time

Fall time

Gate Charge Characteristics^{2, 4)}

Gate to source charge

Gate to drain charge

Q _gs

8.2

Q _gd

V_DD=32 V, I _D=20 A,

_GS=0 to 10 V

Q _g

Gate charge total

2.7

V_plateau

Gate plateau voltage

Reverse Diode

Diode continous forward current²⁾

one channel active

I _S

1.3

T _C=25 °C

Diode pulse current²⁾

one channel active

I _S,pulse

V_SD

t _rr

V_GS=0 V, I _F=17 A,

T _j=25 °C

Diode forward voltage

0.9

V_R=20 V, I _F=I _S,

di_F/dt =100 A/µs

Reverse recovery time²⁾

Reverse recovery charge^{2, 4)}

Q _rr

¹⁾Current is limited by bondwire; with an R _thJC=2.3 K/W the chip is able to carry 73A at 25°C.

²⁾Specified by design. Not subject to production test.

³⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm²(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

⁴⁾Per channel

Rev. 1.0

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IPG20N04S4L-07A

1 Power dissipation

2 Drain current

_tot= f(T _C); V_GS≥ 6 V; one channel active

I _D= f(T _C); V_GS≥ 6 V; one channel active

100

150

200

100

150

200

T_C[°C]

3 Safe operating area

4 Max. transient thermal impedance

Z _thJC= f(t _p)

I _D=f(V_DS); T _C=25°C; D =0; one channel active

parameter: t _p

parameter: D =t _p/T

10¹

100

1 µs

10 µs

100 µs

0.5

10⁰

1 ms

0.1

0.05

10^-1

0.01

single pulse

10^-2

0.1

100

10^-6

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

V_DS[V]

t_p[s]

Rev. 1.0

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IPG20N04S4L-07A

5 Typ. output characteristics⁴⁾

I _D= f(V_DS); T _j= 25 °C

parameter: V_GS

6 Typ. drain-source on-state resistance⁴⁾

R _DS(on)= f(I _D); T _j= 25 °C

parameter: V_GS

10 V

4.5 V

4 V

3.5 V

3 V

3.5 V

4 V

3 V

4.5 V

10 V

I_D[A]

V_DS[V]

7 Typ. transfer characteristics⁴⁾

I _D= f(V_GS); V_DS= 6V

parameter: T _j

8 Typ. drain-source on-state resistance⁴⁾

R _DS(on)= f(T _j); I _D= 17 A; V_GS= 10 V

175 °C 25 °C

-55 °C

1.5

2.5

3.5

4.5

-60

-20

100

140

180

V_GS[V]

T_j[°C]

Rev. 1.0

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IPG20N04S4L-07A

10 Typ. Capacitances⁴⁾

9 Typ. gate threshold voltage

V_GS(th)= f(T _j); V_GS= V_DS

parameter: I _D

C = f(V_DS); V_GS= 0 V; f = 1 MHz

10⁴

2.5

Ciss

10³

10²

10¹

300µA

1.5

Coss

30µA

0.5

Crss

-60

-20

T_j[°C]

100

140

180

V_DS[V]

11 Typical forward diode characteristicis⁴⁾

12 Avalanche characteristics⁴⁾

I _{A S}= f(t _AV

IF = f(V_SD)

)

parameter: T _j

parameter: T_j(start)

10²

100

25 °C

100 °C

10¹

150 °C

25 °C

175 °C

10⁰

0.2

0.4

0.6

0.8

1.2

1.4

100

1000

V_SD[V]

t_AV[µs]

Rev. 1.0

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IPG20N04S4L-07A

13 Avalanche energy⁴⁾

14 Drain-source breakdown voltage

_AS= f(T _j), I _D= 10A

V_BR(DSS)= f(T _j); I _D= 1 mA

250

200

150

100

-60

-20

100

140

180

100

125

150

175

T_j[°C]

15 Typ. gate charge⁴⁾

_GS= f(Q _gate); I _D= 20 A pulsed

16 Gate charge waveforms

parameter: V_DD

V _GS

Q _g

8 V

32 V

V _gs(th)

Q _g(th)

Q _sw

Q _gd

Q _gate

Q _gs

Q_gate[nC]

Rev. 1.0

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2013-02-28

IPG20N04S4L-07A

Published by

Infineon Technologies AG

81726 Munich, Germany

Infineon Technologies AG 2012

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions

or characteristics. With respect to any examples or hints given herein, any typical values stated

herein and/or any information regarding the application of the device, Infineon Technologies hereby

disclaims any and all warranties and liabilities of any kind, including without limitation, warranties

of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact

the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances.

For information on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with the

express written approval of Infineon Technologies, if a failure of such components can reasonably be

expected to cause the failure of that life-support device or system or to affect the safety or

effectiveness of that device or system. Life support devices or systems are intended to be implanted

in the human body or to support and/or maintain and sustain and/or protect human life.

If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Rev. 1.0

page 8

2013-02-28

IPG20N04S4L-07A

Revision History

Version

Date

Changes

Revision 1.0

14.11.2012

Data Sheet revision 1.0

Rev. 1.0

page 9

2013-02-28

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