IPG20N06S2L65AUMA1 [INFINEON]
Power Field-Effect Transistor, 20A I(D), 55V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8;
| 型号： | IPG20N06S2L65AUMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 20A I(D), 55V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 |
| 文件： | 总9页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPG20N06S2L-65
OptiMOS® Power-Transistor
Product Summary
VDS
55
65
20
V
3)
mΩ
A
R DS(on),max
I D
Features
• Dual N-channel Logic Level - Enhancement mode
PG-TDSON-8-4
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPG20N06S2L-65
PG-TDSON-8-4 2N06L65
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
Continuous drain current
one channel active1)
I D
T C=25 °C, VGS=10 V
20
14
80
A
T C=100 °C, VGS=10 V
Pulsed drain current1)
one channel active
I D,pulse
-
Avalanche energy, single pulse1, 3)
Avalanche current, single pulse3)
Gate source voltage
EAS
I AS
I D=10A
40
15
mJ
A
-
VGS
-
±20
V
Power dissipation
one channel active
Ptot
T C=25 °C
43
W
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-
-
-55 ... +175
55/175/56
°C
-
Rev. 1.0
page 1
2009-09-07
IPG20N06S2L-65
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics1)
R thJC
R thJA
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
3.5
K/W
minimal footprint
100
60
-
-
6 cm2 cooling area2)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS
VGS(th)
V
V
GS=0 V, I D= 1 mA
DS=VGS, I D=14 µA
Drain-source breakdown voltage
Gate threshold voltage
55
-
-
V
1.2
1.6
2.0
V
DS=55 V, VGS=0 V,
Zero gate voltage drain current3)
I DSS
-
-
0.01
1
1
µA
T j=25 °C
V
DS=55 V, VGS=0 V,
100
T j=125 °C2)
Gate-source leakage current3)
Drain-source on-state resistance3)
I GSS
V
V
V
GS=20 V, VDS=0 V
GS=4.5 V, I D=7.5A
GS=10 V, I D=15A
-
-
-
1
100 nA
R DS(on)
67
53
79
65
mΩ
Rev. 1.0
page 2
2009-09-07
IPG20N06S2L-65
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics1)
Input capacitance3)
Output capacitance3)
Reverse transfer capacitance3)
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
315
90
35
2
410 pF
120
V
GS=0 V, VDS=25 V,
f =1 MHz
50
-
-
-
-
ns
V
V
DD=27.5 V,
GS=10 V, I D=20 A,
3
t d(off)
t f
Turn-off delay time
Fall time
10
7
R G=11 Ω
Gate Charge Characteristics1, 3)
Gate to source charge
Gate to drain charge
Q gs
-
-
-
-
1.2
3.5
9.4
3.9
1.6
5.3
12
-
nC
Q gd
V
V
DD=44 V, I D=20 A,
GS=0 to 10 V
Q g
Gate charge total
Vplateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current1)
one channel active
I S
-
-
-
-
-
-
20
80
1.3
-
T C=25 °C
Diode pulse current1)
one channel active
I S,pulse
VSD
t rr
-
V
GS=0 V, I F=15 A,
Diode forward voltage
1.0
30
28
V
T j=25 °C
VR=27.5 V, I F=I S,
diF/dt =100 A/µs
Reverse recovery time1)
Reverse recovery charge1, 3)
ns
nC
Q rr
-
1) Specified by design. Not subject to production test.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) Per channel
Rev. 1.0
page 3
2009-09-07
IPG20N06S2L-65
1 Power dissipation
2 Drain current
P
tot = f(T C); VGS ≥ 6 V; one channel active
I D = f(T C); VGS ≥ 6 V; one channel active
45
40
35
30
25
20
15
10
5
25
20
15
10
5
0
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
4 Max. transient thermal impedance
thJC = f(t p)
I D=f(VDS); T C=25°C; D =0; one channel active
parameter: t p
Z
parameter: D =t p/T
101
100
1 µs
0.5
10 µs
100
0.1
10
100 µs
0.05
10-1
0.01
1 ms
single pulse
10-2
1
10-6
10-5
10-4
10-3
10-2
10-1
100
1
10
100
t p [s]
V
DS [V]
Rev. 1.0
page 4
2009-09-07
IPG20N06S2L-65
5 Typ. output characteristics3)
I D = f(VDS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance3)
R
DS(on) = f(I D); T j = 25 °C
parameter: VGS
80
60
40
20
0
160
4.5 V
5.5 V
5 V
4 V
3.5 V
10 V
140
120
100
80
5 V
4.5 V
4 V
60
3.5 V
3 V
10 V
40
0
0
1
2
3
4
5
20
40
60
80
V
DS [V]
I
D [A]
7 Typ. transfer characteristics3)
I D = f(VGS); VDS = 6V
parameter: T j
8 Typ. drain-source on-state resistance3)
R
DS(on) = f(T j); I D = 15 A; VGS = 10 V
80
60
40
20
0
120
-55 °C
25 °C
100
80
60
40
20
175 °C
1
2
3
4
5
6
7
-60
-20
20
60
T j [°C]
100
140
180
V
GS [V]
Rev. 1.0
page 5
2009-09-07
IPG20N06S2L-65
10 Typ. Capacitances3)
C = f(VDS); VGS = 0 V; f = 1 MHz
9 Typ. gate threshold voltage
GS(th) = f(T j); VGS = VDS
V
parameter: I D
2.5
104
103
102
101
2
1.5
1
140µA
14µA
Ciss
Coss
Crss
0.5
0
0
5
10
15
20
25
30
-60
-20
20
60
T j [°C]
100
140
180
V
DS [V]
11 Typical forward diode characteristicis3)
12 Avalanche characteristics3)
IF = f(VSD)
I A S= f(t AV)
parameter: T j
parameter: Tj(start)
102
100
10
1
25 °C
101
100 °C
150 °C
25 °C
175 °C
100
0.1
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
V
SD [V]
t AV [µs]
Rev. 1.0
page 6
2009-09-07
IPG20N06S2L-65
13 Avalanche energy3)
14 Drain-source breakdown voltage
E
AS = f(T j)
V
BR(DSS) = f(T j); I D = 1 mA
parameter: I D
65
100
62
59
56
53
50
80
5 A
60
40
10 A
15 A
20
0
-60
-20
20
60
100
140
180
25
50
75
100
125
150
175
T j [°C]
T j [°C]
15 Typ. gate charge3)
16 Gate charge waveforms
V
GS = f(Q gate); I D = 20 A pulsed
parameter: VDD
12
V GS
11 V
44 V
Q g
10
8
6
V gs(th)
4
2
Q g(th)
Q sw
Q gd
Q gate
Q gs
0
0
2
4
6
8
10
Q
gate [nC]
Rev. 1.0
page 7
2009-09-07
IPG20N06S2L-65
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2009
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2009-09-07
IPG20N06S2L-65
Revision History
Version
Date
Changes
Revision 1.0
07.09.2009 Final Data Sheet
Rev. 1.0
page 9
2009-09-07
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