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IPI03N03LA [INFINEON]

OptiMOS 2 Power-Transistor; 的OptiMOS 2功率三极管
IPI03N03LA
型号： IPI03N03LA
厂家： Infineon    Infineon
描述：

OptiMOS 2 Power-Transistor
的OptiMOS 2功率三极管

晶体 晶体管 功率场效应晶体管 开关 脉冲
文件： 总10页 (文件大小：318K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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IPB03N03LA  
IPI03N03LA, IPP03N03LA  
OptiMOS®2 Power-Transistor  
Product Summary  
V DS  
Features  
25  
2.7  
80  
V
• Ideal for high-frequency dc/dc converters  
• Qualified according to JEDEC1) for target applications  
R
DS(on),max (SMD version)  
mΩ  
A
I D  
• N-channel - Logic level  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
P-TO263-3-2  
P-TO262-3-1  
P-TO220-3-1  
• Superior thermal resistance  
• 175 °C operating temperature  
• dv /dt rated  
Type  
Package  
Ordering Code Marking  
IPB03N03LA  
IPI03N03LA  
IPP03N03LA  
P-TO263-3-2  
P-TO262-3-1  
P-TO220-3-1  
Q67042-S4178  
Q67042-S4180  
Q67042-S4179  
03N03LA  
03N03LA  
03N03LA  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
T C=25 °C2)  
I D  
Continuous drain current  
80  
80  
A
T C=100 °C  
T C=25 °C3)  
I D,pulse  
Pulsed drain current  
385  
960  
E AS  
I D=80 A, R GS=25 Ω  
Avalanche energy, single pulse  
mJ  
I D=80 A, V DS=20 V,  
di /dt =200 A/µs,  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
T
j,max=175 °C  
Gate source voltage4)  
V GS  
±20  
V
P tot  
T C=25 °C  
Power dissipation  
150  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
1) J-STD20 and JESD22  
Rev. 1.4  
page 1  
2004-02-05  
IPB03N03LA  
IPI03N03LA, IPP03N03LA  
Values  
typ.  
Parameter  
Symbol Conditions  
Unit  
min.  
max.  
Thermal characteristics  
R thJC  
Thermal resistance, junction - case  
SMD version, device on PCB  
-
-
-
-
-
-
1
K/W  
R thJA  
minimal footprint  
62  
40  
6 cm2 cooling area5)  
Electrical characteristics, at T j=25 °C, unless otherwise specified  
Static characteristics  
V (BR)DSS  
V GS(th)  
V
V
GS=0 V, I D=1 mA  
Drain-source breakdown voltage  
Gate threshold voltage  
25  
-
-
V
DS=V GS, I D=100 µA  
1.2  
1.6  
2
V
DS=25 V, V GS=0 V,  
I DSS  
Zero gate voltage drain current  
-
-
0.1  
10  
1
µA  
T j=25 °C  
V
DS=25 V, V GS=0 V,  
100  
T j=125 °C  
I GSS  
V
V
GS=20 V, V DS=0 V  
GS=4.5 V, I D=55 A  
Gate-source leakage current  
-
-
10  
100 nA  
R DS(on)  
Drain-source on-state resistance  
3.6  
4.4  
4.1  
3.0  
2.7  
-
mΩ  
V
GS=4.5 V, I D=55 A,  
-
-
3.3  
2.5  
2.2  
0.9  
112  
SMD version  
V
GS=10 V, I D=55 A  
V
GS=10 V, I D=55 A,  
-
SMD version  
R G  
g fs  
Gate resistance  
-
Ω
|V DS|>2|I D|R DS(on)max  
I D=55 A  
,
Transconductance  
56  
-
S
2) Current is limited by bondwire; with an R thJC=1 K/W the chip is able to carry 175 A.  
3) See figure 3  
4) T j,max=150 °C and duty cycle D <0.25 for V GS<-5 V  
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
Rev. 1.4  
page 2  
2004-02-05  
IPB03N03LA  
IPI03N03LA, IPP03N03LA  
Values  
typ.  
Parameter  
Symbol Conditions  
Unit  
min.  
max.  
Dynamic characteristics  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
C iss  
-
-
-
-
-
-
-
5283  
2231  
304  
18  
7027 pF  
2967  
V
GS=0 V, V DS=15 V,  
C oss  
Crss  
t d(on)  
t r  
f =1 MHz  
457  
26  
13  
68  
11  
ns  
8.5  
V
DD=15 V, V GS=10 V,  
I D=20 A, R G=2.7 Ω  
t d(off)  
t f  
Turn-off delay time  
Fall time  
45  
7.5  
Gate Charge Characteristics6)  
Gate to source charge  
Gate charge at threshold  
Gate to drain charge  
Switching charge  
Q gs  
-
-
-
-
-
-
16  
8.5  
12  
21  
11.2  
18  
28  
57  
-
nC  
Q g(th)  
Q gd  
V
V
DD=15 V, I D=40 A,  
GS=0 to 5 V  
Q sw  
20  
Q g  
Gate charge total  
43  
V plateau  
Gate plateau voltage  
3.1  
V
V
V
DS=0.1 V,  
Q g(sync)  
Q oss  
Gate charge total, sync. FET  
Output charge  
-
-
37  
48  
49  
64  
nC  
GS=0 to 5 V  
V
DD=15 V, V GS=0 V  
Reverse Diode  
I S  
Diode continous forward current  
Diode pulse current  
-
-
-
-
80  
A
T C=25 °C  
I S,pulse  
385  
V
GS=0 V, I F=80 A,  
V SD  
Q rr  
Diode forward voltage  
-
-
0.96  
-
1.2  
20  
V
T j=25 °C  
V R=15 V, I F=I S,  
di F/dt =400 A/µs  
Reverse recovery charge  
nC  
6) See figure 16 for gate charge parameter definition  
Rev. 1.4  
page 3  
2004-02-05  
IPB03N03LA  
IPI03N03LA, IPP03N03LA  
1 Power dissipation  
2 Drain current  
P tot=f(T C)  
I D=f(T C); V GS≥10 V  
160  
140  
120  
100  
80  
100  
80  
60  
40  
20  
0
60  
40  
20  
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
T
C [°C]  
T
C [°C]  
3 Safe operation area  
I D=f(V DS); T C=25 °C; D =0  
parameter: t p  
4 Max. transient thermal impedance  
thJC=f(t p)  
Z
parameter: D =t p/T  
1000  
10  
1 µs  
limited by on-state  
resistance  
10 µs  
1
100 µs  
0.5  
100  
DC  
0.2  
1 ms  
0.1  
0.1  
0.05  
0.02  
10 ms  
10  
1
0.01  
single pulse  
0.01  
0.001  
10-6  
10-5  
10
10
10-2  
10-1
100
-4  
-3  
0.1  
1
10  
100  
t p [s]  
V
DS [V]  
Rev. 1.4  
page 4  
2004-02-05  
IPB03N03LA  
IPI03N03LA, IPP03N03LA  
5 Typ. output characteristics  
I D=f(V DS); T j=25 °C  
6 Typ. drain-source on resistance  
DS(on)=f(I D); T j=25 °C  
R
parameter: V GS  
parameter: V GS  
12  
160  
4.5 V  
10 V  
2.8 V  
3.5 V  
3.8 V  
3.2 V  
4.1 V  
140  
120  
100  
80  
3 V  
10  
3.8 V  
8
6
4
2
0
3.5 V  
3.2 V  
4.1 V  
4.5 V  
60  
40  
10 V  
3 V  
20  
2.8 V  
0
0
20  
40  
60  
80 100 120 140 160  
D [A]  
0
1
2
3
V
DS [V]  
I
7 Typ. transfer characteristics  
I D=f(V GS); |V DS|>2|I D|R DS(on)max  
parameter: T j  
8 Typ. forward transconductance  
g fs=f(I D); T j=25 °C  
160  
140  
120  
100  
80  
140  
120  
100  
80  
60  
60  
40  
40  
175 °C  
20  
20  
25 °C  
0
0
0
1
2
3
4
5
0
20  
40  
60  
80  
I
D [A]  
V
GS [V]  
Rev. 1.4  
page 5  
2004-02-05  
IPB03N03LA  
IPI03N03LA, IPP03N03LA  
9 Drain-source on-state resistance  
10 Typ. gate threshold voltage  
GS(th)=f(T j); V GS=V DS  
R
DS(on)=f(T j); I D=55 A; V GS=10 V  
V
parameter: I D  
6
5
2.5  
2
1.5  
1
1000 µA  
4
98 %  
100 µA  
3
typ  
2
1
0
0.5  
0
-60  
-20  
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
100  
140  
180  
T j [°C]  
T j [°C]  
11 Typ. Capacitances  
12 Forward characteristics of reverse diode  
I F=f(V SD  
C =f(V DS); V GS=0 V; f =1 MHz  
)
parameter: T j  
1000  
10000  
25 °C  
Ciss  
175 °C  
175 °C, 98 %  
Coss  
25 °C, 98 %  
100  
10  
1000  
Crss  
1
0
100  
0.5  
1
1.5  
2
0
5
10  
15  
20  
25  
30  
V
DS [V]  
V
SD [V]  
Rev. 1.4  
page 6  
2004-02-05  
IPB03N03LA  
IPI03N03LA, IPP03N03LA  
13 Avalanche characteristics  
AS=f(t AV); R GS=25 Ω  
14 Typ. gate charge  
GS=f(Q gate); I D=40 A pulsed  
V
I
parameter: Tj(start)  
parameter: V DD  
100  
12  
25 °C  
150 °C  
100 °C  
15 V  
10  
8
5 V  
20 V  
10  
6
4
2
1
1
0
0
10  
100  
1000  
20  
40  
60  
80  
100  
Q
gate [nC]  
t
AV [µs]  
15 Drain-source breakdown voltage  
16 Gate charge waveforms  
V
BR(DSS)=f(T j); I D=1 mA  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
V GS  
Q g  
V gs(th)  
Q g(th)  
Q sw  
Q gd  
Q gate  
Q gs  
-60  
-20  
20  
60  
100  
140  
180  
T j [°C]  
Rev. 1.4  
page 7  
2004-02-05  
IPB03N03LA  
IPI03N03LA, IPP03N03LA  
Package Outline  
P-TO263-3-2: Outline  
Footprint  
Packaging  
Dimensions in mm  
Rev. 1.4  
page 8  
2004-02-05  
IPB03N03LA  
IPI03N03LA, IPP03N03LA  
P-TO262-3-1: Outline  
P-TO220-3-1: Outline  
Packaging  
Dimensions in mm  
Rev. 1.4  
page 9  
2004-02-05  
IPB03N03LA  
IPI03N03LA, IPP03N03LA  
Published by  
Infineon Technologies AG  
Bereich Kommunikation  
St.-Martin-Straße 53  
D-81541 München  
© Infineon Technologies AG 1999  
All Rights Reserved.  
Attention please!  
The information herein is given to describe certain components and shall not be considered as  
warranted characteristics.  
Terms of delivery and rights to technical change reserved.  
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,  
regarding circuits, descriptions and charts started herein.  
Infineon Technologies is an approved CECC manufacturer.  
Information  
For further information on technology, delivery terms and conditions and prices, please contact your  
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide  
(see address list).  
Warnings  
Due to technical requirements, components may contain dangerous substances.  
For information on the types in question, please contact your nearest Infineon Technologies office.  
Infineon Technologies' components may only be used in life-support devices or systems with the  
expressed written approval of Infineon Technologies if a failure of such components can reasonably  
be expected to cause the failure of that life-support device or system, or to affect the safety or  
effectiveness of that device or system. Life support devices or systems are intended to be implanted  
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,  
it is reasonable to assume that the health of the user or other persons may be endangered.  
Rev. 1.4  
page 10  
2004-02-05  

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