IPI057N08N3G [INFINEON]
OptiMOS 3 Power-Transistor Features N-channel, normal level; 的OptiMOS 3功率三极管特点N沟道，正常水平
| 型号： | IPI057N08N3G |
| 厂家： | 
Infineon |
| 描述： | OptiMOS 3 Power-Transistor Features N-channel, normal level |
| 文件： | 总11页 (文件大小：522K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
OptiMOS®3 Power-Transistor
Product Summary
Features
V DS
80
5.4
80
V
• N-channel, normal level
R DS(on),max (SMD)
I D
mΩ
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
previous engineering
sample codes:
IPP06CN08N
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPP057N08N3 G
IPI057N08N3 G
IPB054N08N3 G
Package
Marking
PG-TO220-3
057N08N
PG-TO262-3
057N08N
PG-TO263-3
054N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
T C=25 °C2)
I D
Continuous drain current
80
80
A
T C=100 °C
Pulsed drain current2)
I D,pulse
E AS
T C=25 °C
320
I D=80 A, R GS=25 Ω
Avalanche energy, single pulse
Gate source voltage
210
mJ
V
V GS
±20
P tot
T C=25 °C
Power dissipation
150
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
Rev. 1.0
page 1
2008-01-25
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
Thermal resistance,
-
-
-
-
-
-
1
K/W
R thJA
minimal footprint
62
40
6 cm2 cooling area3)
junction - ambient
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=1 mA
DS=V GS, I D=90 µA
Drain-source breakdown voltage
Gate threshold voltage
80
2
-
-
V
2.8
3.5
V
DS=80 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
T j=25 °C
V
DS=80 V, V GS=0 V,
100
T j=125 °C
I GSS
V
V
V
GS=20 V, V DS=0 V
GS=10 V, I D=80 A
GS=6 V, I D=40 A
Gate-source leakage current
-
-
-
1
100 nA
R DS(on)
Drain-source on-state resistance
4.9
6.3
5.7
9.9
mΩ
V
GS=10 V, I D=80 A,
R DS(on)
Drain-source on-state resistance
-
4.6
5.4
(SMD)
V
GS=6 V, I D=40 A,
-
-
6.0
2.2
9.6
(SMD)
R G
g fs
Gate resistance
-
-
Ω
|V DS|>2|I D|R DS(on)max
I D=80 A
,
Transconductance
52
103
S
1)J-STD20 and JESD22
2) See figure 3
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2
Rev. 1.0
page 2
2008-01-25
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
3570
963
36
4750 pF
1280
V
GS=0 V, V DS=40 V,
C oss
C rss
t d(on)
t r
f =1 MHz
54
18
-
-
-
-
ns
66
V
DD=40 V, V GS=10 V,
I D=80 A, R G=1.6 Ω
t d(off)
t f
Turn-off delay time
Fall time
38
10
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
19
11
19
52
5.2
70
25
16
27
69
-
nC
Q gd
V
V
DD=40 V, I D=80 A,
Q sw
Q g
GS=0 to 10 V
Gate charge total
V plateau
Q oss
Gate plateau voltage
Output charge
V
V
DD=40 V, V GS=0 V
93
nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
80
A
T C=25 °C
I S,pulse
320
V
GS=0 V, I F=80 A,
V SD
Diode forward voltage
-
1.0
1.2
V
T j=25 °C
t rr
Reverse recovery time
-
-
72
-
-
ns
V R=40 V, I F=I S,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
130
nC
4) See figure 16 for gate charge parameter definition
Rev. 1.0
page 3
2008-01-25
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); V GS≥10 V
180
150
120
90
100
80
60
40
20
0
60
30
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJC=f(t p)
Z
parameter: D =t p/T
103
101
limited by on-state
resistance
1 µs
10 µs
102
101
100
100
100 µs
0.5
1 ms
0.2
0.1
10 ms
10-1
0.05
DC
0.02
0.01
single pulse
10-2
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
V
DS [V]
t p [s]
Rev. 1.0
page 4
2008-01-25
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: V GS
parameter: V GS
320
20
8 V
10 V
7 V
280
16
6.5 V
240
200
5.5 V
5 V
4.5 V
12
8
6 V
160
6 V
120
5.5 V
6.5 V
8 V
7 V
80
10 V
4
5 V
40
4.5 V
0
0
0
0
1
2
3
4
5
40
80
120
160
V
DS [V]
I
D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
180
150
120
90
160
120
80
40
0
60
175 °C
25 °C
30
0
0
2
4
6
8
0
40
80
120
160
V
GS [V]
I
D [A]
Rev. 1.0
page 5
2008-01-25
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
GS(th)=f(T j); V GS=V DS
R
DS(on)=f(T j); I D=80 A; V GS=10 V
V
parameter: I D
12
10
8
4
3
2
1
900 µA
90 µA
98 %
6
typ
4
2
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
103
Ciss
25 °C
Coss
175 °C, 98%
175 °C
103
102
25 °C, 98%
102
101
Crss
101
100
0
0
20
40
60
80
0.5
1
1.5
2
V
DS [V]
V
SD [V]
Rev. 1.0
page 6
2008-01-25
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=80 A pulsed
V
I
parameter: T j(start)
parameter: V DD
100
12
25 °C
40 V
10
8
20 V
60 V
100 °C
10
6
150 °C
4
2
1
0
0
0.1
1
10
100
1000
20
40
60
t
AV [µs]
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
90
85
80
75
70
65
60
V GS
Q g
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.0
page 7
2008-01-25
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
PG-TO263-3 (D²-Pak)
Rev. 1.0
page 8
2008-01-25
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
PG-TO262-3 (I²-Pak)
Rev. 1.0
page 9
2008-01-25
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
PG-TO220-3
Rev. 1.0
page 10
2008-01-25
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
Rev. 1.0
page 11
2008-01-25
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