IPI80N04S2H4AKSA2 [INFINEON]
Power Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262-3-1, 3 PIN;
| 型号： | IPI80N04S2H4AKSA2 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262-3-1, 3 PIN 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
OptiMOS® Power-Transistor
Product Summary
VDS
40
3.7
80
V
R
DS(on),max (SMD version)
mΩ
A
I D
Features
• N-channel - Enhancement mode
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Ultra low Rds(on)
• 100% Avalanche tested
• Green product (RoHS compliant)
Type
Package
Marking
2N04H4
2N04H4
2N04H4
IPB80N04S2-H4
IPP80N04S2-H4
IPI80N04S2-0H4
PG-TO263-3-2
PG-TO220-3-1
PG-TO262-3-1
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
Continuous drain current1)
I D
T C=25 °C, VGS=10 V
T C=100 °C,
80
80
A
V
GS=10 V2)
Pulsed drain current2)
I D,pulse
EAS
T C=25 °C
I D=80A
320
660
±20
300
Avalanche energy, single pulse
Gate source voltage
mJ
V
VGS
Ptot
T C=25 °C
Power dissipation
W
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... +175
55/175/56
°C
Rev. 1.1
page 1
2008-02-22
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics2)
R thJC
R thJA
R thJA
Thermal resistance, junction - case
-
-
-
-
0.5
62
K/W
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
minimal footprint
-
-
-
-
62
40
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS
VGS(th)
V
V
GS=0 V, I D= 1 mA
Drain-source breakdown voltage
Gate threshold voltage
40
-
-
V
DS=VGS, I D=250 µA
2.1
3.0
4.0
V
DS=40 V, VGS=0 V,
I DSS
Zero gate voltage drain current
-
-
0.01
1
1
µA
T j=25 °C
V
DS=40 V, VGS=0 V,
100
T j=125 °C2)
I GSS
V
V
GS=20 V, VDS=0 V
GS=10 V, I D=80 A
Gate-source leakage current
-
-
1
100 nA
RDS(on)
Drain-source on-state resistance
3.5
4.0
mΩ
V
GS=10 V, I D=80 A,
-
3.2
3.7
SMD version
Rev. 1.1
page 2
2008-02-22
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
4400
1800
480
23
-
-
-
-
-
-
-
pF
ns
V
GS=0 V, VDS=25 V,
f =1 MHz
63
V
DD=20 V, VGS=10 V,
I D=80 A, R G=1.3 Ω
t d(off)
t f
Turn-off delay time
Fall time
46
22
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
21
38
29
70
148
-
nC
Q gd
V
V
DD=32 V, I D=80 A,
GS=0 to 10 V
Q g
103
4.9
Vplateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
80
T C=25 °C
I S,pulse
320
V
GS=0 V, I F=80 A,
VSD
Diode forward voltage
Reverse recovery time2)
Reverse recovery charge2)
-
-
-
0.9
195
370
1.3
V
T j=25 °C
VR=20 V, I F=I S,
diF/dt =100 A/µs
t rr
-
-
ns
nC
VR=20 V, I F=I S,
diF/dt =100 A/µs
Q rr
1) Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 200A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2008-02-22
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
1 Power dissipation
2 Drain current
P
tot = f(T C); VGS ≥ 6 V
I D = f(T C); VGS ≥ 10 V
350
300
250
200
150
100
50
100
80
60
40
20
0
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
4 Max. transient thermal impedance
thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0
parameter: t p
Z
parameter: D =t p/T
100
1000
100
10
10 µs
0.5
100 µs
10-1
1 ms
0.1
0.05
10-2 0.01
single pulse
10-3
1
10-7
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
V
DS [V]
t
p [s]
Rev. 1.1
page 4
2008-02-22
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance
DS(on) = (I D); T j = 25 °C
R
parameter: VGS
300
10 V
6.5 V
7 V
5.5 V
6 V
18
250
200
150
100
50
6 V
6.5 V
14
10
6
5.5 V
5 V
7 V
10 V
0
2
0
0
2
4
6
8
10
80
160
240
320
I
D [A]
V
DS [V]
7 Typ. transfer characteristics
I D = f(VGS); VDS = 6V
parameter: T j
8 Typ. Forward transconductance
g fs = f(I D); T j = 25°C
parameter: g fs
320
280
240
200
160
120
80
200
175
150
125
100
75
50
175 °C
40
25
25 °C
-55 °C
0
0
2
3
4
5
6
7
0
50
100
150
V
GS [V]
I D [A]
Rev. 1.1
page 5
2008-02-22
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
9 Typ. Drain-source on-state resistance
DS(ON) = f(T j)
10 Typ. gate threshold voltage
GS(th) = f(T j); VGS = VDS
R
V
parameter: I D = 80 A; VGS = 10 V
parameter: I D
6
4
3.5
3
5
4
3
2
1250 µA
250 µA
2.5
2
1.5
1
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Typical forward diode characteristicis
C = f(VDS); VGS = 0 V; f = 1 MHz
IF = f(VSD)
parameter: T j
103
104
103
102
102
Ciss
Coss
25 °C
175 °C
101
Crss
100
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
DS [V]
V
SD [V]
Rev. 1.1
page 6
2008-02-22
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
13 Avalanche energy
AS = f(T j)
14 Typ. gate charge
GS = f(Q gate); I D = 80 A pulsed
E
V
parameter: I D
3000
12
10
8
20 A
32 V
8 V
2500
2000
1500
1000
500
6
40 A
80 A
4
2
0
0
25
75
125
175
0
20
40
60
80
100
120
T j [°C]
Q
gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS) = f(T j); I D = 1 mA
48
46
44
42
40
38
36
VGS
Qg
Qgate
Qgd
Qgs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.1
page 7
2008-02-22
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2008
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.1
page 8
2008-02-22
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
Revision History
Version
Date
Changes
Update of side 1 and 10 according
to new template
Revision 1.1
Revision 1.1
22.02.2008
22.02.2008
Update of SOA diagram, labelling
Rev. 1.1
page 9
2008-02-22
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