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IPL65R165CFD [INFINEON]

650V CoolMOS™ CFD2 替代产品是600V CoolMOS™ CFD7;
IPL65R165CFD
型号： IPL65R165CFD
厂家： Infineon    Infineon
描述：

650V CoolMOS™ CFD2 替代产品是600V CoolMOS™ CFD7

开关 脉冲 晶体管
文件： 总13页 (文件大小：1436K)
中文：  中文翻译
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IPL65R165CFD  
MOSFET  
ThinPAKꢀ8x8  
650VꢀCoolMOSªꢀCFD2ꢀPowerꢀTransistor  
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower  
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand  
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀ650VꢀCoolMOS™ꢀCFD2ꢀseries  
combinesꢀtheꢀexperienceꢀofꢀtheꢀleadingꢀSJꢀMOSFETꢀsupplierꢀwithꢀhigh  
classꢀinnovation.ꢀTheꢀresultingꢀdevicesꢀprovideꢀallꢀbenefitsꢀofꢀaꢀfast  
switchingꢀSJꢀMOSFETꢀwhileꢀofferingꢀanꢀextremelyꢀfastꢀandꢀrobustꢀbody  
diode.ꢀThisꢀcombinationꢀofꢀextremelyꢀlowꢀswitching,ꢀcommutationꢀand  
conductionꢀlossesꢀtogetherꢀwithꢀhighestꢀrobustnessꢀmakeꢀespecially  
resonantꢀswitchingꢀapplicationsꢀmoreꢀreliable,ꢀmoreꢀefficient,ꢀlighterꢀand  
cooler.  
ThinPAK  
ThinPAKꢀisꢀaꢀaꢀnewꢀleadlessꢀSMDꢀpackageꢀforꢀHVꢀMOSFETs.ꢀTheꢀnew  
packageꢀhasꢀaꢀveryꢀsmallꢀfootprintꢀofꢀonlyꢀ64mm²ꢀ(vs.ꢀ150mm²ꢀforꢀthe  
D²PAK)ꢀandꢀaꢀveryꢀlowꢀprofileꢀwithꢀonlyꢀ1mmꢀheightꢀ(vs.ꢀ4.4mmꢀforꢀthe  
D²PAK).ꢀTheꢀsignificantlyꢀsmallerꢀpackageꢀsize,ꢀcombinedꢀwithꢀbenchmark  
lowꢀparasiticꢀinductances,ꢀprovidesꢀdesignersꢀwithꢀaꢀnewꢀandꢀeffectiveꢀway  
toꢀdecreaseꢀsystemꢀsolutionꢀsizeꢀinꢀpower-densityꢀdrivenꢀdesigns.  
Drain  
Pin 5  
Gate  
Pin 1  
Driver  
Source  
Pin 2  
Power  
Source  
Pin 3,4  
Features  
•ꢀReducedꢀboardꢀspaceꢀconsumption  
•ꢀIncreasedꢀpowerꢀdensity  
•ꢀShortꢀcommutationꢀloop  
•ꢀSmoothꢀswitchingꢀwaveform  
•ꢀUltra-fastꢀbodyꢀdiode  
•ꢀVeryꢀhighꢀcommutationꢀruggedness  
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss  
•ꢀEasyꢀtoꢀuse/drive  
•ꢀQualifiedꢀforꢀindustrialꢀgradeꢀapplicationsꢀaccordingꢀtoꢀJEDEC  
(J-STD20ꢀandꢀJESD22)  
•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound  
Potentialꢀapplications  
650VꢀCoolMOS™ꢀCFD2ꢀisꢀespeciallyꢀsuitableꢀforꢀresonantꢀswitching  
stagesꢀforꢀe.g.ꢀPCꢀSilverbox,ꢀLCDꢀTV,ꢀLighting,ꢀServerꢀandꢀTelecom.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Vds @ Tjmax  
RDS(on),max  
Qg,typ  
Value  
700  
0.165  
86  
Unit  
V
Ω
nC  
A
ID,pulse  
67  
Eoss @ 400V  
Body diode diF/dt  
Qrr  
6.8  
µJ  
A/µs  
µC  
ns  
A
900  
0.7  
tr  
140  
8.8  
Irrm  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPL65R165CFD  
PG-VSON-4  
65F6165  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2017-09-07  
650VꢀCoolMOSªꢀCFD2ꢀPowerꢀTransistor  
IPL65R165CFD  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Final Data Sheet  
2
Rev.ꢀ2.1,ꢀꢀ2017-09-07  
650VꢀCoolMOSªꢀCFD2ꢀPowerꢀTransistor  
IPL65R165CFD  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
21.3  
13.5  
TC = 25°C  
A
Continuous drain current1)  
ID  
TC = 100°C  
Pulsed drain current2)  
ID,pulse  
EAS  
-
-
-
-
-
-
-
-
-
-
67  
A
TC=25 °C  
Avalanche energy, single pulse  
Avalanche energy, repetitive  
Avalanche current, repetitive  
MOSFET dv/dt ruggedness  
614  
0.93  
4.3  
50  
mJ  
mJ  
A
ID =4.3 A; VDD = 50 V  
EAR  
ID =4.3 A; VDD = 50 V  
-
IAR  
dv/dt  
V/ns VDSꢀ=0...400ꢀV  
-20  
-30  
-
-
20  
30  
static;  
V
Gate source voltage  
VGS  
AC (f>1 Hz)  
Power dissipation  
Ptot  
-
-
-
-
-
195  
150  
21.3  
67  
W
°C  
A
TC=25ꢀ°C  
-
Operating and storage temperature  
Continuous diode forward current  
Diode pulse current2)  
Tj,ꢀTstg  
IS  
-40  
-
-
TC=25ꢀ°C  
TC = 25°C  
IS,pulse  
A
VDSꢀ=0...400ꢀV,ꢀISD<=ꢀID,ꢀTj=25ꢀ°C  
see table 8  
Reverse diode dv/dt3)  
dv/dt  
diF/dt  
-
-
-
-
50  
V/ns  
VDSꢀ=0...400ꢀV,ꢀISD<=ꢀID,ꢀTj=25ꢀ°C  
see table 8  
Maximum diode commutation speed  
900  
A/µs  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
RthJC  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case  
-
0.64  
°C/W -  
SMD version, device on PCB,  
minimal footprint  
SMD version, device on PCB, 6cm²  
Thermal resistance, junction - ambient4)  
-
-
-
-
62  
45  
RthJA  
°C/W  
4)  
cooling area  
Soldering temperature, wavesoldering  
only allowed at leads  
Tsold  
-
-
260  
°C  
reflow MSL2a  
1) Limited by Tj max  
2) Pulse width tp limited by Tj,max  
3)ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG  
4) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCB  
is vertical without air steam cooling.  
Final Data Sheet  
3
Rev.ꢀ2.1,ꢀꢀ2017-09-07  
650VꢀCoolMOSªꢀCFD2ꢀPowerꢀTransistor  
IPL65R165CFD  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
650  
3.5  
Typ.  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
V(GS)th  
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
4
4.5  
VDS=VGS,ꢀID=0.9ꢀmA  
-
-
-
1
-
VDS=650ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=650ꢀV,ꢀVGS=0ꢀV,ꢀTj=150ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage curent  
Drain-source on-state resistance  
Gate resistance  
IDSS  
µA  
nA  
Ω
300  
IGSS  
-
-
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
0.149 0.165  
0.386  
VGS=10ꢀV,ꢀID=9.3A,ꢀTj=25ꢀ°C  
VGS=10ꢀV,ꢀID=9.3ꢀA,ꢀTj=150ꢀ°C  
RDS(on)  
RG  
-
-
1.5  
-
Ω
f=1ꢀMHz,ꢀopenꢀdrain  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance  
Ciss  
-
-
2340  
110  
-
-
pF  
pF  
VGS=0ꢀV,ꢀVDS=100ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=100ꢀV,ꢀf=1ꢀMHz  
Coss  
Effective output capacitance, energy  
related1)  
Co(er)  
Co(tr)  
td(on)  
tr  
-
-
-
-
-
-
90  
-
-
-
-
-
-
pF  
pF  
ns  
ns  
ns  
ns  
VGS=0ꢀV,ꢀVDS=0...400V  
Effective output capacitance, time  
related2)  
420  
12.4  
7.6  
ID=constant,ꢀVGS=0ꢀV,ꢀVDS=0...400V  
VDD=400ꢀV,ꢀVGS=13ꢀV,ꢀID=14ꢀA,  
RG=1.8Ω;ꢀseeꢀtableꢀ9  
Turn-on delay time  
Rise time  
VDD=400ꢀV,ꢀVGS=13ꢀV,ꢀID=14ꢀA,  
RG=1.8Ω;ꢀseeꢀtableꢀ9  
VDD=400ꢀV,ꢀVGS=13ꢀV,ꢀID=14ꢀA,  
RG=1.8Ω;ꢀseeꢀtableꢀ9  
Turn-off delay time  
Fall time  
td(off)  
tf  
52.8  
5.6  
VDD=400ꢀV,ꢀVGS=13ꢀV,ꢀID=14ꢀA,  
RG=1.8Ω;ꢀseeꢀtableꢀ9  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  
Values  
Typ.  
15  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
V
VDD=480ꢀV,ꢀID=14ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=480ꢀV,ꢀID=14ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=480ꢀV,ꢀID=14ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=480ꢀV,ꢀID=14ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
Qgd  
47  
Qg  
86  
Gate plateau voltage  
Vplateau  
6.4  
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
Final Data Sheet  
4
Rev.ꢀ2.1,ꢀꢀ2017-09-07  
650VꢀCoolMOSªꢀCFD2ꢀPowerꢀTransistor  
IPL65R165CFD  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics  
Values  
Typ.  
0.9  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Diode forward voltage  
Reverse recovery time  
VSD  
trr  
-
-
V
VGS=0ꢀV,ꢀIF=14ꢀA,ꢀTj=25ꢀ°C  
VR=400ꢀV,ꢀIF=14AꢀdiF/dt=100ꢀA/µs  
see table 8  
-
-
-
140  
0.7  
8.8  
-
-
-
ns  
VR=400ꢀV,ꢀIF=14AꢀdiF/dt=100ꢀA/µs  
see table 8  
Reverse recovery charge  
Qrr  
Irrm  
µC  
A
VR=400ꢀV,ꢀIF=14AꢀdiF/dt=100ꢀA/µs  
see table 8  
Peak reverse recovery current  
Final Data Sheet  
5
Rev.ꢀ2.1,ꢀꢀ2017-09-07  
650VꢀCoolMOSªꢀCFD2ꢀPowerꢀTransistor  
IPL65R165CFD  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea  
200  
102  
1 µs  
10 µs  
100 µs  
175  
150  
125  
100  
75  
101  
100  
1 ms  
10 ms  
DC  
10-1  
10-2  
10-3  
50  
25  
0
0
25  
50  
75  
100  
125  
150  
100  
101  
102  
103  
TCꢀ[°C]  
VDSꢀ[V]  
Ptot=f(TC)  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
102  
101  
1 µs  
10 µs  
101  
100  
100 µs  
1 ms  
10 ms  
100  
0.5  
0.2  
DC  
10-1  
10-2  
10-3  
10-1  
0.1  
0.05  
0.02  
0.01  
single pulse  
10-2  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.1,ꢀꢀ2017-09-07  
650VꢀCoolMOSªꢀCFD2ꢀPowerꢀTransistor  
IPL65R165CFD  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics  
70  
45  
20 V  
20 V  
10 V  
40  
35  
30  
25  
20  
15  
10  
5
10 V  
60  
8 V  
7 V  
50  
8 V  
40  
30  
7 V  
6 V  
20  
5.5 V  
6 V  
10  
5.5 V  
5 V  
4.5 V  
4.5 V  
15  
5 V  
0
0
0
5
10  
20  
0
5
10  
15  
20  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance  
1.00  
0.45  
0.90  
0.80  
0.70  
0.60  
0.40  
0.35  
0.30  
0.25  
6.5 V  
5 V  
6 V  
5.5 V  
7 V  
0.50  
0.40  
0.30  
0.20  
0.10  
0.20  
0.15  
0.10  
0.05  
0.00  
typ  
98%  
10 V  
0
10  
20  
30  
40  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
IDꢀ[A]  
Tjꢀ[°C]  
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(Tj);ꢀID=9.3ꢀA;ꢀVGS=10ꢀV  
Final Data Sheet  
7
Rev.ꢀ2.1,ꢀꢀ2017-09-07  
650VꢀCoolMOSªꢀCFD2ꢀPowerꢀTransistor  
IPL65R165CFD  
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge  
70  
10  
25 °C  
9
8
7
6
5
4
3
2
1
0
60  
120 V  
400 V  
50  
40  
150 °C  
30  
20  
10  
0
0
2
4
6
8
10  
12  
0
25  
50  
75  
100  
VGSꢀ[V]  
Qgateꢀ[nC]  
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj  
VGS=f(Qgate);ꢀID=14ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
Diagramꢀ12:ꢀAvalancheꢀenergy  
102  
700  
600  
500  
400  
300  
200  
100  
0
101  
125 °C  
25 °C  
100  
10-1  
0.0  
0.5  
1.0  
1.5  
2.0  
25  
50  
75  
100  
125  
150  
VSDꢀ[V]  
Tjꢀ[°C]  
IF=f(VSD);ꢀparameter:ꢀTj  
EAS=f(Tj);ꢀID=4.3ꢀA;ꢀVDD=50ꢀV  
Final Data Sheet  
8
Rev.ꢀ2.1,ꢀꢀ2017-09-07  
650VꢀCoolMOSªꢀCFD2ꢀPowerꢀTransistor  
IPL65R165CFD  
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagramꢀ14:ꢀTyp.ꢀcapacitances  
760  
104  
740  
720  
700  
680  
660  
640  
620  
600  
580  
Ciss  
103  
Coss  
102  
101  
Crss  
100  
-50  
0
50  
100  
150  
200  
0
100  
200  
300  
400  
500  
Tjꢀ[°C]  
VDSꢀ[V]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1MHz  
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy  
10  
9
8
7
6
5
4
3
2
1
0
0
100  
200  
300  
400  
500  
VDSꢀ[V]  
Eoss=f(VDS  
)
Final Data Sheet  
9
Rev.ꢀ2.1,ꢀꢀ2017-09-07  
650VꢀCoolMOSªꢀCFD2ꢀPowerꢀTransistor  
IPL65R165CFD  
5ꢀꢀꢀꢀꢀTestꢀCircuits  
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics  
Test circuit for diode characteristics  
Diode recovery waveform  
Rg1  
VDS  
Rg 2  
IF  
Rg1 = Rg 2  
Tableꢀ9ꢀꢀꢀꢀꢀswitchingꢀtimesꢀ(ss)  
Switching times test circuit for inductive load  
Switching times waveform  
VDS  
90%  
10%  
VDS  
VGS  
VGS  
td(off)  
tf  
td(on)  
ton  
tr  
toff  
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀloadꢀ(ss)  
Unclamped inductive load test circuit  
Unclamped inductive waveform  
V(BR)DS  
ID  
VDS  
VDS  
VDS  
ID  
Final Data Sheet  
10  
Rev.ꢀ2.1,ꢀꢀ2017-09-07  
650VꢀCoolMOSªꢀCFD2ꢀPowerꢀTransistor  
IPL65R165CFD  
6ꢀꢀꢀꢀꢀPackageꢀOutlines  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-VSON-4,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
11  
Rev.ꢀ2.1,ꢀꢀ2017-09-07  
650VꢀCoolMOSªꢀCFD2ꢀPowerꢀTransistor  
IPL65R165CFD  
7ꢀꢀꢀꢀꢀAppendixꢀA  
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks  
• IFXꢀCoolMOSꢀWebpage:ꢀwww.infineon.com  
• IFXꢀDesignꢀtools:ꢀwww.infineon.com  
Final Data Sheet  
12  
Rev.ꢀ2.1,ꢀꢀ2017-09-07  
650VꢀCoolMOSªꢀCFD2ꢀPowerꢀTransistor  
IPL65R165CFD  
RevisionꢀHistory  
IPL65R165CFD  
Revision:ꢀ2017-09-07,ꢀRev.ꢀ2.1  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
Release of final version  
2.0  
2.1  
2014-03-19  
2017-09-07  
Updated MSL; style updated  
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG  
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,  
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,  
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,  
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,  
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.  
TrademarksꢀupdatedꢀAugustꢀ2015  
OtherꢀTrademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2017ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ  
(“Beschaffenheitsgarantie”)ꢀ.  
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
13  
Rev.ꢀ2.1,ꢀꢀ2017-09-07  

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