IPLK60R360PFD7 [INFINEON]
600V CoolMOS™ PFD7 超结 MOSFET (IPLK60R360PFD7) 使 CoolMOS™ 7 的消费应用更加广泛。采用 ThinPAK 5x6封装的 IPLK60R360PFD7 具有 360mOhm RDS(on) ，从而降低开关损耗。这种封装方式占用空间非常小，只有 5x6mm²，高度非常低，仅 1mm。再加上标杆低寄生参数，使得外形显著缩小，并有助于提高功率密度。CoolMOS™ PFD7 产品集成了快速体二极管，可确保器件的坚固性，有利于客户减少材料清单 (BOM)。;
| 型号： | IPLK60R360PFD7 |
| 厂家： | 
Infineon |
| 描述： | 600V CoolMOS™ PFD7 超结 MOSFET (IPLK60R360PFD7) 使 CoolMOS™ 7 的消费应用更加广泛。采用 ThinPAK 5x6封装的 IPLK60R360PFD7 具有 360mOhm RDS(on) ，从而降低开关损耗。这种封装方式占用空间非常小，只有 5x6mm²，高度非常低，仅 1mm。再加上标杆低寄生参数，使得外形显著缩小，并有助于提高功率密度。CoolMOS™ PFD7 产品集成了快速体二极管，可确保器件的坚固性，有利于客户减少材料清单 (BOM)。 开关 二极管 |
| 文件： | 总14页 (文件大小：1378K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPLK60R360PFD7
MOSFET
ThinPAKꢀ5x6
8
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
7
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.
6
5
TheꢀlatestꢀCoolMOS™ꢀPFD7ꢀisꢀanꢀoptimizedꢀplatformꢀtailoredꢀtoꢀtarget
costꢀsensitiveꢀapplicationsꢀinꢀconsumerꢀmarketsꢀsuchꢀasꢀcharger,ꢀadapter,
motorꢀdrive,ꢀlighting,ꢀetc.
TheꢀnewꢀseriesꢀprovidesꢀallꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSuperjunction
MOSFET,ꢀcombinedꢀwithꢀanꢀexcellentꢀprice/performanceꢀratioꢀandꢀstateꢀof
theꢀartꢀease-of-useꢀlevel.ꢀTheꢀtechnologyꢀmeetsꢀhighestꢀefficiency
standardsꢀandꢀsupportsꢀhighꢀpowerꢀdensity,ꢀenablingꢀcustomersꢀgoing
towardsꢀveryꢀslimꢀdesigns.
1
2
3
4
*1: Internal body diode
*2: Internal ESD diode
Drain
Pin 5,6,7,8
Features
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRDS(on)*QgꢀandꢀRDS(on)*Eoss
•ꢀLowꢀswitchingꢀlossesꢀEoss,ꢀexcellentꢀthermalꢀbehavior
•ꢀFastꢀbodyꢀdiode
*1
Gate
Pin 4
*2
•ꢀWideꢀrangeꢀportfolioꢀofꢀRDS(on)ꢀandꢀpackageꢀvariations
•ꢀIntegratedꢀzenerꢀdiode
Kelvin
Source
Pin 3
Source
Pin 1,2
Benefits
•ꢀEnablesꢀhighꢀpowerꢀdensityꢀdesignsꢀandꢀsmallꢀformꢀfactors
•ꢀEnablesꢀefficiencyꢀgainsꢀatꢀhigherꢀswitchingꢀfrequencies
•ꢀExcellentꢀcommutationꢀruggedness
•ꢀEasyꢀtoꢀselectꢀrightꢀpartsꢀandꢀoptimizeꢀtheꢀdesign
•ꢀHighꢀESDꢀruggedness
Potentialꢀapplications
RecommendedꢀforꢀZVSꢀtopologiesꢀusedꢀinꢀhighꢀdensityꢀchargers,
adapters,ꢀlightingꢀandꢀmotorꢀdrivesꢀapplications,ꢀetc.
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj,max
RDS(on),max
Value
650
360
12.7
24
Unit
V
mΩ
nC
A
Qg,typ
ID,pulse
Eoss @ 400V
Body diode diF/dt
ESD Class (HBM)
1.6
µJ
1300
2
A/µs
-
Typeꢀ/ꢀOrderingꢀCode
Package
ThinPAK 5x6 SMD
Marking
RelatedꢀLinks
see Appendix A
IPLK60R360PFD7
60R360D7
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2020-01-22
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPLK60R360PFD7
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2020-01-22
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPLK60R360PFD7
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
13
8
TC=25°C
A
Continuous drain current1)
ID
TC=100°C
Pulsed drain current2)
ID,pulse
EAS
EAR
IAS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
24
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
-
29
mJ
mJ
A
ID=2.1A; VDD=50V; see table 10
-
0.14
2.1
120
20
ID=2.1A; VDD=50V; see table 10
-
-
dv/dt
VGS
VGS
Ptot
Tstg
Tj
-
V/ns VDS=0...400V
-20
-30
-
V
static;
30
V
AC (f>1 Hz)
74
W
°C
°C
TC=25°C
Storage temperature
-55
-55
-
150
150
-
-
-
Operating junction temperature
Mounting torque
-
Ncm -
Continuous diode forward current1)
Diode pulse current2)
IS
-
13
A
A
TC=25°C
IS,pulse
-
24
TC=25°C
VDS=0...400V,ꢀISD<=9.3A,ꢀTj=25°Cꢀꢀꢀꢀ
Reverse diode dv/dt3)
dv/dt
-
-
70
V/ns
see table 8
VDS=0...400V,ꢀISD<=9.3A,ꢀTj=25°Cꢀꢀꢀꢀ
Maximum diode commutation speed
Insulation withstand voltage
diF/dt
-
-
-
-
1300 A/µs
n.a.
see table 8
VISO
V
Vrms,ꢀTC=25°C,ꢀt=1min
1) Limited by Tj,max. Maximum Duty Cycle D = 0.50
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2020-01-22
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPLK60R360PFD7
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
1.70
80
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
°C/W device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
Thermal resistance, junction - ambient
for SMD version
layer, 70µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
RthJA
-
-
35
-
62
°C/W
Soldering temperature, wave & reflow
soldering allowed
Tsold
260
°C
reflow MSL1
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2020-01-22
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPLK60R360PFD7
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
3.5
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
-
V
V
VGS=0V,ꢀID=1mA
4
4.5
VDS=VGS,ꢀID=0.14mA
-
-
-
3
1
37
VDS=600V,ꢀVGS=0V,ꢀTj=25°C
VDS=600V,ꢀVGS=0V,ꢀTj=125°C
Zero gate voltage drain current1)
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
IGSS
-
-
1000 nA
VGS=20V,ꢀVDS=0V
-
-
0.303 0.360
0.711
VGS=10V,ꢀID=2.9A,ꢀTj=25°C
VGS=10V,ꢀID=2.9A,ꢀTj=150°C
RDS(on)
RG
Ω
Ω
-
-
11.0
-
f=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
534
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
Coss
12
Effective output capacitance, energy
related2)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
20
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...400V
Effective output capacitance, time
related3)
187
13.5
11
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V
VDD=400V,ꢀVGS=10V,ꢀID=2.9A,
RG=10.2Ω;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=10V,ꢀID=2.9A,
RG=10.2Ω;ꢀseeꢀtableꢀ9
VDD=400V,ꢀVGS=10V,ꢀID=2.9A,
RG=10.2Ω;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
46
VDD=400V,ꢀVGS=10V,ꢀID=2.9A,
RG=10.2Ω;ꢀseeꢀtableꢀ9
13
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
3.0
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=400V,ꢀID=2.9A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=2.9A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=2.9A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=2.9A,ꢀVGS=0ꢀtoꢀ10V
Qgd
4.4
Qg
12.7
5.6
Gate plateau voltage
Vplateau
1) Maximum specification is defined by calculated six sigma upper confidence bound
2)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
3)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2020-01-22
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPLK60R360PFD7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
1.0
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
-
V
VGS=0V,ꢀIF=2.9A,ꢀTj=25°C
VR=400V,ꢀIF=2.9A,ꢀdiF/dt=100A/µs;
see table 8
-
-
-
60
90
0.28
-
ns
VR=400V,ꢀIF=2.9A,ꢀdiF/dt=100A/µs;
see table 8
Reverse recovery charge
Qrr
Irrm
0.14
4.1
µC
A
VR=400V,ꢀIF=2.9A,ꢀdiF/dt=100A/µs;
see table 8
Peak reverse recovery current
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2020-01-22
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPLK60R360PFD7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
80
102
70
60
50
40
30
20
10
0
1 µs
101
100
10 µs
100 µs
10-1
10-2
10-3
10-4
1 ms
10 ms
DC
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
102
101
101
100
1 µs
10 µs
100 µs
10-1
10-2
10-3
10-4
100
0.5
1 ms
10 ms
DC
0.2
0.1
0.05
0.02
0.01
single pulse
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2020-01-22
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPLK60R360PFD7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
35
25
20 V
10 V
20 V
10 V
30
25
20
15
10
5
8 V
8 V
7 V
20
15
10
5
7 V
6 V
5.5 V
6 V
5.5 V
5 V
5 V
4.5 V
4.5 V
0
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
1.000
2.5
0.950
0.900
2.0
1.5
1.0
0.5
5.5 V
10 V
6 V
6.5 V 7 V
0.850
0.800
0.750
0.700
0.650
0.600
0.550
0.500
20 V
0
5
10
15
20
25
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=2.9ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2020-01-22
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPLK60R360PFD7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
35
10
25 °C
9
8
7
6
5
4
3
2
1
0
30
25
120 V
400 V
20
150 °C
15
10
5
0
0
2
4
6
8
10
12
0
3
6
9
12
15
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=2.9ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
30
25
20
15
10
5
101
125 °C
25 °C
100
10-1
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=2.1ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2020-01-22
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPLK60R360PFD7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
690
104
660
630
600
570
540
103
Ciss
102
Coss
101
Crss
100
10-1
-50
-25
0
25
50
75
100
125
150
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
2.5
2.0
1.5
1.0
0.5
0.0
0
100
200
300
400
500
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2020-01-22
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPLK60R360PFD7
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimesꢀ(ss)
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀloadꢀ(ss)
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2020-01-22
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPLK60R360PFD7
6ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00181453
MILLIMETERS
DIM
INCHES
MIN
0.90
MAX
1.10
0.54
MIN
MAX
0.043
0.021
0.009
0.014
0
A
b
0.035
SCALE
b1
c
0.001
0.006
0.203
0.195
2.5
0.15
5.15
4.95
0.35
0
2.5
D
D1
D2
E
5.35
4.40
6.35
6.10
0.211
0.173
0.250
0.240
5mm
5.95
5.70
0.234
0.224
EUROPEAN PROJECTION
E1
E2
e
1.27
8
0.050
8
N
K1
L
0.45
0.45
ꢀꢁꢂ
0.018
0.018
ꢀꢁꢂ
ISSUE DATE
13-05-2016
M
Ĭ
ꢃꢄ
ꢃꢄ
REVISION
aaa
eee
0.25
0.08
0.010
0.003
01
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀThinPAKꢀ5x6ꢀSMD,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2020-01-22
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPLK60R360PFD7
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSꢀPFD7ꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀPFD7ꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀPFD7ꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2020-01-22
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPLK60R360PFD7
RevisionꢀHistory
IPLK60R360PFD7
Revision:ꢀ2020-01-22,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2020-01-22
Trademarks
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WeꢀListenꢀtoꢀYourꢀComments
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously
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Publishedꢀby
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Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
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failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2020-01-22
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