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IPN50R2K0CE [INFINEON]

英飞凌正在拓展采用 SOT-223 封装的CoolMOS™ CE 产品组合，作为 DPAK 的一种高性价比替代产品，在某些设计中还可以减少占据的空间。此封装可以放置在典型的 DPAK 空间，且在热行为上的影响极小。英飞凌的 SOT-223 面向 LED 照明和移动充电器应用。;
IPN50R2K0CE
型号： IPN50R2K0CE
厂家： Infineon    Infineon
描述：

英飞凌正在拓展采用 SOT-223 封装的CoolMOS™ CE 产品组合，作为 DPAK 的一种高性价比替代产品，在某些设计中还可以减少占据的空间。此封装可以放置在典型的 DPAK 空间，且在热行为上的影响极小。英飞凌的 SOT-223 面向 LED 照明和移动充电器应用。
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中文：  中文翻译
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IPN50R2K0CE  
MOSFET  
PG-SOT223  
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower  
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand  
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀCEꢀisꢀa  
price-performanceꢀoptimizedꢀplatformꢀenablingꢀtoꢀtargetꢀcostꢀsensitive  
applicationsꢀinꢀConsumerꢀandꢀLightingꢀmarketsꢀbyꢀstillꢀmeetingꢀhighest  
efficiencyꢀstandards.ꢀTheꢀnewꢀseriesꢀprovidesꢀallꢀbenefitsꢀofꢀaꢀfast  
switchingꢀSuperjunctionꢀMOSFETꢀwhileꢀnotꢀsacrificingꢀeaseꢀofꢀuseꢀand  
offeringꢀtheꢀbestꢀcostꢀdownꢀperformanceꢀratioꢀavailableꢀonꢀtheꢀmarket.  
Features  
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss  
•ꢀVeryꢀhighꢀcommutationꢀruggedness  
•ꢀEasyꢀtoꢀuse/drive  
Drain  
Pin 2  
•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound  
•ꢀQualifiedꢀforꢀstandardꢀgradeꢀapplications  
Gate  
Pin 1  
Applications  
Adapter,ꢀChargerꢀandꢀLighting  
Source  
Pin 3  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseperateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
ID  
Value  
550  
2
Unit  
V
Ω
3.6  
6
A
Qg.typ  
nC  
A
ID,pulse  
6.1  
0.62  
Eoss@400V  
µJ  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPN50R2K0CE  
PG-SOT223  
50S2K0  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2016-06-13  
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPN50R2K0CE  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Final Data Sheet  
2
Rev.ꢀ2.1,ꢀꢀ2016-06-13  
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPN50R2K0CE  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
3.6  
2.3  
TC = 25°C  
A
Continuous drain current1)  
ID  
TC = 100°C  
Pulsed drain current2)  
ID,pulse  
EAS  
-
-
-
-
-
-
-
-
-
-
6.1  
34  
A
TC = 25°C  
Avalanche energy, single pulse  
Avalanche energy, repetitive  
Avalanche current, repetitive  
MOSFET dv/dt ruggedness  
mJ  
mJ  
A
ID = 0.8A; VDD = 50V  
ID = 0.8A; VDD = 50V  
-
EAR  
0.05  
0.8  
50  
IAR  
dv/dt  
V/ns VDSꢀ=ꢀ0...400V  
-20  
-30  
-
-
20  
30  
static;  
V
Gate source voltage  
VGS  
AC (f>1 Hz)  
Power dissipation  
Ptot  
-
-
-
-
-
5.0  
150  
1.0  
6.1  
W
°C  
A
TCꢀ=ꢀ25°C  
-
Operating and storage temperature  
Continuous diode forward current  
Diode pulse current2)  
Tj,ꢀTstg  
IS  
-40  
-
-
TCꢀ=ꢀ25°C  
TC = 25°C  
IS,pulse  
A
VDSꢀ=ꢀ0...400V,ꢀISD<=IS,ꢀTj=25°C,  
tcond<2µs  
Reverse diode dv/dt3)  
dv/dt  
-
-
-
-
15  
V/ns  
VDSꢀ=ꢀ0...400V,ꢀISD<=IS,ꢀTj=25°C,  
tcond<2µs  
Maximum diode commutation speed3) dif/dt  
500  
A/µs  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - solder  
point  
RthJS  
-
-
-
25  
°C/W -  
Thermal resistance, junction - ambient  
for minimal footprint  
RthJA  
-
-
-
160  
75  
°C/W minimal footprint  
Device on 40mm*40mm*1.5 epoxy  
PCB FR4 with 6cm2 (one layer 70µm  
°C/W thick) copper area for drain  
connection and cooling. PCB is  
vertical without blown air.  
Thermal resistance, junction - ambient  
soldered on copper area  
RthJA  
-
-
Soldering temperature, wavesoldering  
only allowed at leads  
Tsold  
260  
°C  
reflow MSL3  
1) DPAK equivalent. Limited by Tj max. Maximum duty cycle D=0.5  
2) Pulse width tp limited by Tj,max  
3)ꢀVDClink=400V;ꢀVDS,peak<V(BR)DSS;ꢀidenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG  
Final Data Sheet  
3
Rev.ꢀ2.1,ꢀꢀ2016-06-13  
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPN50R2K0CE  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
500  
Typ.  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
-
V
V
VGS=0V,ꢀID=1mA  
2.50  
3
3.50  
VDS=VGS,ꢀID=0.05mA  
-
-
-
10  
1
-
VDS=500V,ꢀVGS=0V,ꢀTj=25°C  
VDS=500V,ꢀVGS=0V,ꢀTj=150°C  
Zero gate voltage drain current  
Gate-source leakage curent  
Drain-source on-state resistance  
Gate resistance  
IDSS  
µA  
nA  
Ω
IGSS  
-
-
100  
VGS=20V,ꢀVDS=0V  
-
-
1.80  
4.68  
2.00  
-
VGS=13V,ꢀID=0.6A,ꢀTj=25°C  
VGS=13V,ꢀID=0.6A,ꢀTj=150°C  
RDS(on)  
RG  
-
7
-
Ω
f=1ꢀMHz,ꢀopenꢀdrain  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
124  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance  
Ciss  
-
-
-
-
pF  
pF  
VGS=0V,ꢀVDS=100V,ꢀf=1MHz  
VGS=0V,ꢀVDS=100V,ꢀf=1MHz  
Coss  
9
Effective output capacitance, energy  
related1)  
Co(er)  
Co(tr)  
td(on)  
tr  
-
-
-
-
-
-
8
-
-
-
-
-
-
pF  
pF  
ns  
ns  
ns  
ns  
VGS=0V,ꢀVDS=0...400V  
Effective output capacitance, time  
related2)  
26  
6
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V  
VDD=400V,ꢀVGS=13V,ꢀID=0.8A,  
RG=5.3Ω  
Turn-on delay time  
Rise time  
VDD=400V,ꢀVGS=13V,ꢀID=0.8A,  
RG=5.3Ω  
5
VDD=400V,ꢀVGS=13V,ꢀID=0.8A,  
RG=5.3Ω  
Turn-off delay time  
Fall time  
td(off)  
tf  
21  
38  
VDD=400V,ꢀVGS=13V,ꢀID=0.8A,  
RG=5.3Ω  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  
Values  
Typ.  
0.7  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
V
VDD=400V,ꢀID=0.8A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=0.8A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=0.8A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=0.8A,ꢀVGS=0ꢀtoꢀ10V  
Qgd  
3.5  
Qg  
6
Gate plateau voltage  
Vplateau  
5.4  
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
Final Data Sheet  
4
Rev.ꢀ2.1,ꢀꢀ2016-06-13  
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPN50R2K0CE  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics  
Values  
Typ.  
0.83  
110  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Diode forward voltage  
VSD  
trr  
-
-
-
-
-
-
-
-
V
VGS=0V,ꢀIF=0.8A,ꢀTf=25°C  
Reverse recovery time  
ns  
µC  
A
VR=400V,ꢀIF=0.8A,ꢀdiF/dt=100A/µs  
VR=400V,ꢀIF=0.8A,ꢀdiF/dt=100A/µs  
VR=400V,ꢀIF=0.8A,ꢀdiF/dt=100A/µs  
Reverse recovery charge  
Peak reverse recovery current  
Qrr  
Irrm  
0.35  
5.2  
Final Data Sheet  
5
Rev.ꢀ2.1,ꢀꢀ2016-06-13  
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPN50R2K0CE  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea  
6
101  
1 µs  
10 µs  
5
4
3
2
1
0
100 µs  
1 ms  
100  
10 ms  
DC  
10-1  
10-2  
10-3  
0
25  
50  
75  
100  
125  
150  
100  
101  
102  
103  
TCꢀ[°C]  
VDSꢀ[V]  
Ptot=f(TC)  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
101  
102  
1 µs  
10 µs  
0.5  
100  
101  
100 µs  
0.2  
0.1  
1 ms  
0.05  
10 ms  
DC  
10-1  
100  
0.02  
0.01  
single pulse  
10-2  
10-1  
10-3  
10-2  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.1,ꢀꢀ2016-06-13  
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPN50R2K0CE  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics  
7
5.0  
20 V  
20 V  
10 V  
8 V  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
6
10 V  
8 V  
5
7 V  
4
7 V  
3
6 V  
2
5.5 V  
6 V  
5.5 V  
5 V  
1
5 V  
4.5 V  
4.5 V  
0
0
5
10  
15  
20  
0
5
10  
15  
20  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance  
6.0  
6
5 V  
6 V  
7 V  
6.5 V  
5.5 V  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
5
4
10 V  
98%  
3
typ  
2
1
0
0
1
2
3
4
-50  
-25  
0
25  
50  
75  
100  
125  
150  
IDꢀ[A]  
Tjꢀ[°C]  
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(Tj);ꢀID=0.6ꢀA;ꢀVGS=13ꢀV  
Final Data Sheet  
7
Rev.ꢀ2.1,ꢀꢀ2016-06-13  
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPN50R2K0CE  
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge  
7
10  
9
8
7
6
5
4
3
2
1
0
6
25 °C  
120 V  
5
4
400 V  
150 °C  
3
2
1
0
0
2
4
6
8
10  
12  
0
2
4
6
VGSꢀ[V]  
Qgateꢀ[nC]  
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj  
VGS=f(Qgate);ꢀID=0.8ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
Diagramꢀ12:ꢀAvalancheꢀenergy  
102  
35  
25 °C  
125 °C  
30  
25  
20  
15  
10  
5
101  
100  
10-1  
0
0.0  
0.5  
1.0  
1.5  
2.0  
25  
50  
75  
100  
125  
150  
VSDꢀ[V]  
Tjꢀ[°C]  
IF=f(VSD);ꢀparameter:ꢀTj  
EAS=f(Tj);ꢀID=0.8ꢀA;ꢀVDD=50ꢀV  
Final Data Sheet  
8
Rev.ꢀ2.1,ꢀꢀ2016-06-13  
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPN50R2K0CE  
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagramꢀ14:ꢀTyp.ꢀcapacitances  
580  
104  
560  
540  
520  
500  
480  
460  
440  
103  
Ciss  
102  
101  
Coss  
Crss  
100  
-75 -50 -25  
0
25  
50  
75 100 125 150 175  
0
100  
200  
300  
400  
500  
Tjꢀ[°C]  
VDSꢀ[V]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy  
1.00  
0.90  
0.80  
0.70  
0.60  
0.50  
0.40  
0.30  
0.20  
0.10  
0.00  
0
100  
200  
300  
400  
500  
VDSꢀ[V]  
Eoss=f(VDS  
)
Final Data Sheet  
9
Rev.ꢀ2.1,ꢀꢀ2016-06-13  
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPN50R2K0CE  
5ꢀꢀꢀꢀꢀTestꢀCircuits  
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics  
Test circuit for diode characteristics  
Diode recovery waveform  
V,I  
VDS  
Rg1  
VDS(peak)  
VDS  
trr  
VDS  
IF  
tF  
tS  
dIF / dt  
Rg 2  
IF  
t
10%Irrm  
Q
F
Q
S
IF  
dI / dt  
rr  
trr =tF +tS  
rr  
Irrm  
Q =QF +Q  
S
Rg1 = Rg 2  
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes  
Switching times test circuit for inductive load  
Switching times waveform  
VDS  
90%  
10%  
VDS  
VGS  
VGS  
td(off)  
tf  
td(on)  
ton  
tr  
toff  
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload  
Unclamped inductive load test circuit  
Unclamped inductive waveform  
V(BR)DS  
ID  
VDS  
VDS  
VDS  
ID  
Final Data Sheet  
10  
Rev.ꢀ2.1,ꢀꢀ2016-06-13  
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPN50R2K0CE  
6ꢀꢀꢀꢀꢀPackageꢀOutlines  
DOCUMENT NO.  
Z8B00180553  
0
SCALE  
MILLIMETERS  
DIM  
INCHES  
MIN  
1.52  
-
MAX  
1.80  
0.10  
1.70  
0.80  
3.10  
0.32  
6.70  
7.30  
3.70  
MIN  
0.060  
-
MAX  
2.5  
A
A1  
A2  
b
0.071  
0.004  
0.067  
0.031  
0.122  
0.013  
0.264  
0.287  
0.146  
0
2.5  
1,50  
0.059  
0.024  
0.116  
0.009  
0.248  
0.264  
0.130  
5mm  
0.60  
2.95  
0.24  
6.30  
6.70  
3.30  
b2  
c
EUROPEAN PROJECTION  
D
E
E1  
e
2.3 BASIC  
4.6 BASIC  
0.091 BASIC  
0.181 BASIC  
e1  
L
ISSUE DATE  
24-02-2016  
0.75  
1.10  
0.030  
0.043  
N
3
3
REVISION  
O
ꢀƒ  
ꢁꢀƒ  
ꢀƒ  
ꢁꢀƒ  
01  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-SOT223,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
11  
Rev.ꢀ2.1,ꢀꢀ2016-06-13  
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPN50R2K0CE  
7ꢀꢀꢀꢀꢀAppendixꢀA  
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks  
• IFXꢀCoolMOSꢀWebpage:ꢀwww.infineon.com  
• IFXꢀDesignꢀtools:ꢀwww.infineon.com  
Final Data Sheet  
12  
Rev.ꢀ2.1,ꢀꢀ2016-06-13  
500VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPN50R2K0CE  
RevisionꢀHistory  
IPN50R2K0CE  
Revision:ꢀ2016-06-13,ꢀRev.ꢀ2.1  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.0  
2.1  
Release of final version  
Updated ID ratings  
2016-04-29  
2016-06-13  
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG  
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,  
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,  
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,  
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,  
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.  
TrademarksꢀupdatedꢀAugustꢀ2015  
OtherꢀTrademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2016ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWith  
respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication  
ofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout  
limitation,ꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
13  
Rev.ꢀ2.1,ꢀꢀ2016-06-13  

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