IPN60R600PFD7S [INFINEON]
600V CoolMOS™ PFD7 超结 MOSFET (IPN60R600PFD7S) 补充了CoolMOS™ 7,可用于消费类应用。采用 SOT-223 封装的 IPN60R600PFD7S,其 RDS(on) 为 600mOhm,降低了开关损耗。600V CoolMOS™ PFD7 SJ MOSFET 配置了快速体二极管,可确保器件坚固耐用,进而为客户减少物料清单(BOM)。英飞凌先进的 SMD 封装进一步减少了 PCB 空间,可促进生产。 ;型号: | IPN60R600PFD7S |
厂家: | Infineon |
描述: | 600V CoolMOS™ PFD7 超结 MOSFET (IPN60R600PFD7S) 补充了CoolMOS™ 7,可用于消费类应用。采用 SOT-223 封装的 IPN60R600PFD7S,其 RDS(on) 为 600mOhm,降低了开关损耗。600V CoolMOS™ PFD7 SJ MOSFET 配置了快速体二极管,可确保器件坚固耐用,进而为客户减少物料清单(BOM)。英飞凌先进的 SMD 封装进一步减少了 PCB 空间,可促进生产。 开关 PC 二极管 |
文件: | 总14页 (文件大小:1077K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IPN60R600PFD7S
MOSFET
PG-SOT223
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.
TheꢀlatestꢀCoolMOS™ꢀPFD7ꢀisꢀanꢀoptimizedꢀplatformꢀtailoredꢀtoꢀtarget
costꢀsensitiveꢀapplicationsꢀinꢀconsumerꢀmarketsꢀsuchꢀasꢀcharger,ꢀadapter,
motorꢀdrive,ꢀlighting,ꢀetc.
TheꢀnewꢀseriesꢀprovidesꢀallꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSuperjunction
MOSFET,ꢀcombinedꢀwithꢀanꢀexcellentꢀprice/performanceꢀratioꢀandꢀstateꢀof
theꢀartꢀease-of-useꢀlevel.ꢀTheꢀtechnologyꢀmeetsꢀhighestꢀefficiency
standardsꢀandꢀsupportsꢀhighꢀpowerꢀdensity,ꢀenablingꢀcustomersꢀgoing
towardsꢀveryꢀslimꢀdesigns.
Drain
Pin 2
Features
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRDS(on)*QgꢀandꢀRDS(on)*Eoss
•ꢀLowꢀswitchingꢀlossesꢀEoss,ꢀexcellentꢀthermalꢀbehavior
•ꢀFastꢀbodyꢀdiode
*1
Gate
Pin 1
*2
•ꢀWideꢀrangeꢀportfolioꢀofꢀRDS(on)ꢀandꢀpackageꢀvariations
•ꢀIntegratedꢀzenerꢀdiode
Source
Pin 3
*1: Internal body diode
*2: Integrated ESD diode
Benefits
•ꢀEnablesꢀhighꢀpowerꢀdensityꢀdesignsꢀandꢀsmallꢀformꢀfactors
•ꢀEnablesꢀefficiencyꢀgainsꢀatꢀhigherꢀswitchingꢀfrequencies
•ꢀExcellentꢀcommutationꢀruggedness
•ꢀEasyꢀtoꢀselectꢀrightꢀpartsꢀandꢀoptimizeꢀtheꢀdesign
•ꢀHighꢀESDꢀruggedness
Potentialꢀapplications
RecommendedꢀforꢀZVSꢀtopologiesꢀusedꢀinꢀhighꢀdensityꢀchargers,
adapters,ꢀlightingꢀandꢀmotorꢀdrivesꢀapplications,ꢀetc.
Productꢀvalidation
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj,max
RDS(on),max
Value
650
600
8.5
Unit
V
mΩ
nC
A
Qg,typ
ID,pulse
14
Eoss @ 400V
Body diode diF/dt
ESD Class (HBM)
1.1
µJ
1300
2
A/µs
-
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPN60R600PFD7S
PG-SOT223
60S600D7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2019-10-14
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPN60R600PFD7S
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2019-10-14
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPN60R600PFD7S
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
6
4
TC=25°C
A
Continuous drain current1)
ID
TC=100°C
Pulsed drain current2)
ID,pulse
EAS
EAR
IAS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
14
17
0.08
1.4
120
20
30
7
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
-
mJ
mJ
A
ID=1.4A; VDD=50V; see table 10
-
ID=1.4A; VDD=50V; see table 10
-
-
dv/dt
VGS
VGS
Ptot
Tstg
Tj
-
V/ns VDS=0...400V
-20
-30
-
V
static;
V
AC (f>1 Hz)
W
°C
°C
TC=25°C
Storage temperature
-40
-40
-
150
150
-
-
-
Operating junction temperature
Mounting torque
-
Ncm -
Continuous diode forward current1)
Diode pulse current2)
IS
-
6
A
A
TC=25°C
IS,pulse
-
14
TC=25°C
VDS=0...400V,ꢀISD<=4.7A,ꢀTj=25°Cꢀꢀꢀꢀ
Reverse diode dv/dt3)
dv/dt
-
-
70
V/ns
see table 8
VDS=0...400V,ꢀISD<=4.7A,ꢀTj=25°Cꢀꢀꢀꢀ
Maximum diode commutation speed
Insulation withstand voltage
diF/dt
-
-
-
-
1300 A/µs
n.a.
see table 8
VISO
V
Vrms,ꢀTC=25°C,ꢀt=1min
1) Limited by Tj,max. Maximum Duty Cycle D = 0.50; DPAK / IPAK equivalent.
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2019-10-14
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPN60R600PFD7S
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
18.2
160
Thermal resistance, junction - solder
point
RthJS
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
°C/W device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
Thermal resistance, junction - ambient
for SMD version
layer, 70µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
RthJA
-
-
35
-
75
°C/W
Soldering temperature, wavesoldering
only allowed at leads
Tsold
260
°C
reflow MSL1
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2019-10-14
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPN60R600PFD7S
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
3.5
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
-
V
V
VGS=0V,ꢀID=1mA
4
4.5
VDS=VGS,ꢀID=0.08mA
-
-
-
2
1
37
VDS=600V,ꢀVGS=0V,ꢀTj=25°C
VDS=600V,ꢀVGS=0V,ꢀTj=125°C
Zero gate voltage drain current1)
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
IGSS
-
-
1000 nA
VGS=20V,ꢀVDS=0V
-
-
0.517 0.600
1.219
VGS=10V,ꢀID=1.7A,ꢀTj=25°C
VGS=10V,ꢀID=1.7A,ꢀTj=150°C
RDS(on)
RG
Ω
Ω
-
-
11.0
-
f=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
344
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
Coss
8
Effective output capacitance, energy
related2)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
13
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...400V
Effective output capacitance, time
related3)
120
9.2
10
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V
VDD=400V,ꢀVGS=10V,ꢀID=1.7A,
RG=10.2Ω;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=10V,ꢀID=1.7A,
RG=10.2Ω;ꢀseeꢀtableꢀ9
VDD=400V,ꢀVGS=10V,ꢀID=1.7A,
RG=10.2Ω;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
43.5
23
VDD=400V,ꢀVGS=10V,ꢀID=1.7A,
RG=10.2Ω;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
2.0
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=400V,ꢀID=1.7A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=1.7A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=1.7A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=1.7A,ꢀVGS=0ꢀtoꢀ10V
Qgd
3.0
Qg
8.5
Gate plateau voltage
Vplateau
5.6
1) Maximum specification is defined by calculated six sigma upper confidence bound
2)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
3)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2019-10-14
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPN60R600PFD7S
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
1.0
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
-
V
VGS=0V,ꢀIF=1.7A,ꢀTj=25°C
VR=400V,ꢀIF=1.7A,ꢀdiF/dt=100A/µs;
see table 8
-
-
-
47
71
0.20
-
ns
VR=400V,ꢀIF=1.7A,ꢀdiF/dt=100A/µs;
see table 8
Reverse recovery charge
Qrr
Irrm
0.10
3.8
µC
A
VR=400V,ꢀIF=1.7A,ꢀdiF/dt=100A/µs;
see table 8
Peak reverse recovery current
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2019-10-14
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPN60R600PFD7S
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
8
102
7
6
5
4
3
2
1
0
101
100
1 µs
10 µs
10-1
10-2
10-3
10-4
10-5
100 µs
1 ms
10 ms
DC
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
102
102
101
100
1 µs
101
0.5
10 µs
0.2
0.1
10-1
10-2
10-3
10-4
10-5
100 µs
100
0.05
0.02
0.01
1 ms
single pulse
10 ms
10-1
DC
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
101
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2019-10-14
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPN60R600PFD7S
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
20
15
20 V
10 V
8 V
20 V
10 V
16
12
9
8 V
7 V
7 V
12
8
6
6 V
4
3
5.5 V
6 V
5.5 V
5 V
5 V
4.5 V
4.5 V
0
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
1.800
2.5
1.700
1.600
2.0
1.5
1.0
0.5
5.5 V
6 V
7 V 10 V
6.5 V
1.500
1.400
1.300
1.200
1.100
1.000
0.900
20 V
0
3
6
9
12
15
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=1.7ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2019-10-14
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPN60R600PFD7S
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
20
10
25 °C
9
8
7
6
5
4
3
2
1
0
16
120 V
400 V
12
150 °C
8
4
0
0
2
4
6
8
10
12
0
1
2
3
4
5
6
7
8
9
10
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=1.7ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
20
15
10
5
101
125 °C
25 °C
100
10-1
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=1.4ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2019-10-14
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPN60R600PFD7S
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
690
104
660
630
600
570
540
103
Ciss
102
101
Coss
100
Crss
10-1
-50
-25
0
25
50
75
100
125
150
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
1.5
1.2
0.9
0.6
0.3
0.0
0
100
200
300
400
500
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2019-10-14
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPN60R600PFD7S
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2019-10-14
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPN60R600PFD7S
6ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00180553
0
SCALE
MILLIMETERS
MAX
INCHES
DIM
MIN
1.52
-
MIN
0.060
-
MAX
2.5
A
A1
A2
b
1.80
0.10
1.70
0.80
3.10
0.32
6.70
7.30
3.70
0.071
0.004
0.067
0.031
0.122
0.013
0.264
0.287
0.146
0
2.5
1,50
0.059
0.024
0.116
0.009
0.248
0.264
0.130
5mm
0.60
2.95
0.24
6.30
6.70
3.30
b2
c
EUROPEAN PROJECTION
D
E
E1
e
2.3 BASIC
4.6 BASIC
0.091 BASIC
0.181 BASIC
e1
L
ISSUE DATE
24-02-2016
0.75
1.10
0.030
0.043
N
3
3
REVISION
O
ꢀ
ꢁꢀ
ꢀ
ꢁꢀ
01
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-SOT223,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2019-10-14
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPN60R600PFD7S
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSꢀPFD7ꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀPFD7ꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSꢀPFD7ꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2019-10-14
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
IPN60R600PFD7S
RevisionꢀHistory
IPN60R600PFD7S
Revision:ꢀ2019-10-14,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2019-10-14
Trademarks
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
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Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2019-10-14
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