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IPP019N06NF2S [INFINEON]

英飞凌 StrongIRFET™ 2 60 V 功率 MOSFET 具备仅为 1.9 mΩ 的极低 RDS(on)，可用于从低到高开关频率的各类应用。;
IPP019N06NF2S
型号： IPP019N06NF2S
厂家： Infineon    Infineon
描述：

英飞凌 StrongIRFET™ 2 60 V 功率 MOSFET 具备仅为 1.9 mΩ 的极低 RDS(on)，可用于从低到高开关频率的各类应用。

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IPP019N06NF2S  
MOSFET  
StrongIRFETTM2ꢀPower-Transistor  
PG-TO220-3  
tab  
Features  
•ꢀOptimizedꢀforꢀwideꢀrangeꢀofꢀapplications  
•ꢀN-channel,ꢀnormalꢀlevel  
•ꢀ100%ꢀavalancheꢀtested  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
Productꢀvalidation  
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard  
Drain  
Pin 2, Tab  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
Unit  
Gate  
Pin 1  
VDS  
60  
V
RDS(on),max  
ID  
1.9  
mΩ  
A
Source  
Pin 3  
185  
108  
108  
Qoss  
nC  
nC  
QGꢀ(0V..10V)  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPP019N06NF2S  
PG-TO220-3  
019N06NS  
-
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2022-05-19  
StrongIRFETTM2ꢀPower-Transistor  
IPP019N06NF2S  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.1,ꢀꢀ2022-05-19  
StrongIRFETTM2ꢀPower-Transistor  
IPP019N06NF2S  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
VGS=10ꢀV,ꢀTC=100ꢀ°C  
-
-
-
-
-
-
185  
142  
33  
Continuous drain current1)  
ID  
A
VGS=10ꢀV,ꢀTA=25ꢀ°C,  
RthJA=40ꢀ°C/W2)  
Pulsed drain current3)  
Avalanche energy, single pulse4)  
ID,pulse  
EAS  
-
-
-
-
740  
349  
20  
A
TC=25ꢀ°C  
-
mJ  
V
ID=100ꢀA,ꢀRGS=25ꢀΩ  
Gate source voltage  
VGS  
-20  
-
-
-
-
-
188  
3.8  
TC=25ꢀ°C  
Power dissipation  
Ptot  
W
TA=25ꢀ°C,ꢀRthJA=40ꢀ°C/W2)  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
175  
°C  
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case  
RthJC  
RthJA  
-
0.8  
°C/W -  
°C/W -  
Thermal resistance, junction - ambient,  
6 cm² cooling area2)  
-
-
-
-
40  
62  
Thermal resistance, junction - ambient,  
minimal footprint  
RthJA  
°C/W -  
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature  
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual  
environmental conditions.  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
3) See Diagram 3 for more detailed information  
4) See Diagram 13 for more detailed information  
Final Data Sheet  
3
Rev.ꢀ2.1,ꢀꢀ2022-05-19  
StrongIRFETTM2ꢀPower-Transistor  
IPP019N06NF2S  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
60  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
2.1  
2.8  
3.3  
VDS=VGS,ꢀID=129ꢀµA  
-
-
0.5  
10  
1
100  
VDS=60ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=60ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance1)  
IDSS  
µA  
nA  
IGSS  
-
10  
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
1.7  
2.1  
1.9  
2.9  
VGS=10ꢀV,ꢀID=100ꢀA  
VGS=6ꢀV,ꢀID=50ꢀA  
RDS(on)  
mΩ  
Gate resistance  
Transconductance2)  
RG  
gfs  
-
2.7  
-
-
-
Ω
-
110  
S
|VDS|≥2|ID|RDS(on)max,ꢀID=100ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
7300  
1550  
63  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Ciss  
Coss  
Crss  
-
-
-
-
-
-
pF  
pF  
pF  
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz  
Output capacitance  
Reverse transfer capacitance  
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
22  
31  
48  
17  
-
-
-
-
ns  
ns  
ns  
ns  
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,  
RG,ext=1.6ꢀΩ  
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,  
RG,ext=1.6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics3)ꢀ  
Values  
Typ.  
33  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate charge at threshold  
Gate to drain charge  
Switching charge  
Qgs  
-
-
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=30ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=30ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=30ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=30ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=30ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=30ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV  
Qg(th)  
Qgd  
20  
-
20  
-
Qsw  
33  
-
Gate charge total2)  
Qg  
108  
4.5  
162  
Gate plateau voltage  
Gate charge total, sync. FET  
Output charge  
Vplateau  
Qg(sync)  
Qoss  
-
-
-
100  
108  
nC  
nC  
VDS=30ꢀV,ꢀVGS=0ꢀV  
1)  
R
DS(on)  
is specified at a distance of 1.8 mm distance to the package body; mounting at a larger distance increases the  
overallpackage resistance of approximately 0.04 mOhm/mm per leg.  
2) Defined by design. Not subject to production test.  
3) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.1,ꢀꢀ2022-05-19  
StrongIRFETTM2ꢀPower-Transistor  
IPP019N06NF2S  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
144  
740  
1.0  
-
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
A
TC=25ꢀ°C  
Diode forward voltage  
0.92  
34  
V
VGS=0ꢀV,ꢀIF=100ꢀA,ꢀTj=25ꢀ°C  
VR=30ꢀV,ꢀIF=100ꢀA,ꢀdiF/dt=500ꢀA/µs  
VR=30ꢀV,ꢀIF=100ꢀA,ꢀdiF/dt=500ꢀA/µs  
Reverse recovery time  
Reverse recovery charge  
ns  
nC  
Qrr  
169  
-
Final Data Sheet  
5
Rev.ꢀ2.1,ꢀꢀ2022-05-19  
StrongIRFETTM2ꢀPower-Transistor  
IPP019N06NF2S  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
200  
200  
160  
120  
80  
40  
0
160  
120  
80  
40  
0
0
25  
50  
75  
100  
125  
150  
175  
0
25  
50  
75  
100  
125  
150  
175  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
101  
single pulse  
0.01  
1 µs  
0.02  
0.05  
100 µs 10 µs  
102  
101  
0.1  
0.2  
0.5  
100  
10 ms  
1 ms  
10-1  
10-2  
10-3  
DC  
100  
10-1  
10-2  
10-1  
100  
101  
102  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.1,ꢀꢀ2022-05-19  
StrongIRFETTM2ꢀPower-Transistor  
IPP019N06NF2S  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
800  
4.0  
10 V  
700  
8 V  
3.5  
5 V  
5.5 V  
6 V  
600  
7 V  
500  
3.0  
2.5  
400  
5.5 V  
300  
6 V  
5 V  
200  
100  
0
2.0  
7 V  
8 V  
10 V  
1.5  
0
1
2
3
4
5
0
50  
100  
150  
200  
250  
300  
350  
400  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
800  
5.0  
25 °C  
700  
600  
500  
400  
300  
200  
100  
0
4.5  
4.0  
3.5  
175 °C  
3.0  
2.5  
2.0  
1.5  
1.0  
175 °C  
25 °C  
0
1
2
3
4
5
6
7
3
6
9
12  
15  
VGSꢀ[V]  
VGSꢀ[V]  
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
RDS(on)=f(VGS),ꢀID=100ꢀA;ꢀparameter:ꢀTj  
Final Data Sheet  
7
Rev.ꢀ2.1,ꢀꢀ2022-05-19  
StrongIRFETTM2ꢀPower-Transistor  
IPP019N06NF2S  
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
2.0  
3.5  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
3.0  
2.5  
2.0  
1.5  
1.0  
1290 µA  
129 µA  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj),ꢀID=100ꢀA,ꢀVGS=10ꢀV  
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀTyp.ꢀforwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
103  
25 °C  
Ciss  
175 °C  
Coss  
103  
102  
101  
102  
101  
100  
Crss  
0
10  
20  
30  
40  
50  
60  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.1,ꢀꢀ2022-05-19  
StrongIRFETTM2ꢀPower-Transistor  
IPP019N06NF2S  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
103  
10  
12 V  
30 V  
48 V  
9
8
7
6
5
4
3
2
1
0
102  
25 °C  
100 °C  
150 °C  
101  
100  
100  
101  
102  
103  
0
20  
40  
60  
80  
100  
120  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start  
VGS=f(Qgate),ꢀID=100ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
65  
64  
63  
62  
61  
60  
59  
58  
57  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
Tjꢀ[°C]  
VBR(DSS)=f(Tj),ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.1,ꢀꢀ2022-05-19  
StrongIRFETTM2ꢀPower-Transistor  
IPP019N06NF2S  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
PACKAGE - GROUP  
NUMBER:  
PG-TO220-3-U05  
REVISION: 02  
DATE: 15.12.2020  
MILLIMETERS  
DIMENSIONS  
MIN.  
4.25  
1.14  
2.47  
0.71  
1.14  
0.36  
14.32  
8.39  
11.89  
9.90  
8.10  
MAX.  
4.75  
1.40  
2.92  
0.97  
1.78  
0.61  
15.80  
9.20  
12.80  
10.67  
8.74  
A
A1  
A2  
b
b1  
c
D
D1  
D2  
E
E1  
e
2.54  
3
N
H
6.00  
13.00  
3.56  
3.54  
2.54  
6.70  
14.40  
4.06  
3.90  
2.94  
L
L1  
øP  
Q
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO220-3,ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
10  
Rev.ꢀ2.1,ꢀꢀ2022-05-19  
StrongIRFETTM2ꢀPower-Transistor  
IPP019N06NF2S  
RevisionꢀHistory  
IPP019N06NF2S  
Revision:ꢀ2022-05-19,ꢀRev.ꢀ2.1  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.0  
2.1  
Release of final version  
Updated diagram 12 title  
2022-02-14  
2022-05-19  
Trademarks  
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
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Final Data Sheet  
11  
Rev.ꢀ2.1,ꢀꢀ2022-05-19  

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