IPP030N10N3 G [INFINEON]
英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。;
| 型号： | IPP030N10N3 G |
| 厂家： | 
Infineon |
| 描述： | 英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。 |
| 文件： | 总10页 (文件大小：536K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPP030N10N3 G
IPI030N10N3 G
OptiMOS™3 Power-Transistor
Features
Product Summary
VDS
100
3
V
• N-channel, normal level
RDS(on),max
ID
mW
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
100
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPP030N10N3 G
IPI030N10N3 G
Package
Marking
PG-TO220-3
030N10N
PG-TO262-3
030N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
T C=25 °C2)
I D
Continuous drain current
100
100
A
T C=100 °C
Pulsed drain current2)
I D,pulse
E AS
T C=25 °C
400
I D=100 A, R GS=25 W
Avalanche energy, single pulse
Gate source voltage
1000
mJ
V
V GS
±20
P tot
T C=25 °C
Power dissipation
300
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
1)J-STD20 and JESD22
2) See figure 3
Rev. 2.1
page 1
2011-07-18
IPP030N10N3 G
IPI030N10N3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
Thermal resistance,
-
-
-
-
-
-
0.5
62
40
K/W
R thJA
minimal footprint
6 cm2 cooling area3)
junction - ambient
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=275 µA
Drain-source breakdown voltage
Gate threshold voltage
100
2
-
-
V
2.7
3.5
V DS=100 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
V DS=100 V, V GS=0 V,
T j=125 °C
100
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
-
-
1
100 nA
R DS(on) V GS=10 V, I D=100 A
V GS=6 V, I D=50 A
R G
Drain-source on-state resistance
2.6
3.1
1.9
3
4.8
-
mW
Gate resistance
W
|V DS|>2|I D|R DS(on)max
I D=100 A
,
g fs
Transconductance
94
188
-
S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.1
page 2
2011-07-18
IPP030N10N3 G
IPI030N10N3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
11100
1940
69
14800 pF
V GS=0 V, V DS=50 V,
f =1 MHz
C oss
C rss
t d(on)
t r
2580
-
34
-
-
-
-
ns
58
V DD=50 V, V GS=10 V,
I D=100 A, R G=1.6 W
t d(off)
t f
Turn-off delay time
Fall time
84
28
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
49
28
-
nC
Q gd
-
V DD=50 V, I D=100 A,
V GS=0 to 10 V
Q sw
Q g
43
-
206
-
Gate charge total
155
4.4
205
V plateau
Q oss
Gate plateau voltage
Output charge
V
V DD=50 V, V GS=0 V
273 nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
100
400
A
T C=25 °C
I S,pulse
V GS=0 V, I F=100 A,
T j=25 °C
V SD
Diode forward voltage
-
1
1.2
V
t rr
Reverse recovery time
-
-
86
-
-
ns
V R=50 V, I F=I S ,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
232
nC
4) See figure 16 for gate charge parameter definition
Rev. 2.1
page 3
2011-07-18
IPP030N10N3 G
IPI030N10N3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
350
300
250
200
150
100
50
120
100
80
60
40
20
0
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
103
100
limited by on-state
resistance
1 µs
10 µs
100 µs
102
101
100
10-1
0.5
1 ms
10 ms
0.2
10-1
DC
0.1
0.05
0.02
0.01
single pulse
10-2
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
tp [s]
VDS [V]
Rev. 2.1
page 4
2011-07-18
IPP030N10N3 G
IPI030N10N3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
300
6
10 V
6 V
250
5
7.5 V
5.5 V
4.5 V
5 V
200
150
100
50
4
5 V
6 V
3
7.5 V
10 V
4.5 V
2
1
0
0
0
1
2
0
40
80
120
160
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
300
250
200
150
100
50
240
200
160
120
80
25 °C
40
175 °C
0
0
0
2
4
6
0
40
80
120
160
VGS [V]
ID [A]
Rev. 2.1
page 5
2011-07-18
IPP030N10N3 G
IPI030N10N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
R DS(on)=f(T j); I D=100 A; V GS=10 V
7
6
5
4
3.5
3
2750 µA
2.5
275 µA
2
4
98 %
typ
3
1.5
1
2
1
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
105
103
Ciss
104
103
102
101
175 °C, 98%
25 °C
102
Coss
175 °C
25 °C, 98%
101
Crss
100
0
0
20
40
VDS [V]
60
80
0.5
1
1.5
2
VSD [V]
Rev. 2.1
page 6
2011-07-18
IPP030N10N3 G
IPI030N10N3 G
13 Avalanche characteristics
14 Typ. gate charge
V GS=f(Q gate); I D=100 A pulsed
parameter: V DD
I AS=f(t AV); R GS=25 W
parameter: T j(start)
1000
100
10
10
8
80 V
50 V
25 °C
6
100 °C
20 V
150 °C
4
2
0
1
1
10
100
1000
0
40
80
120
160
tAV [µs]
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
110
105
100
95
V GS
Q g
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
90
-60
-20
20
60
100
140
180
Tj [°C]
Rev. 2.1
page 7
2011-07-18
IPP030N10N3 G
IPI030N10N3 G
PG-TO220-3: Outline
Rev. 2.1
page 8
2011-07-18
IPP030N10N3 G
IPI030N10N3 G
PG-TO262-3
Rev. 2.1
page 9
2011-07-18
IPP030N10N3 G
IPI030N10N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.1
page 10
2011-07-18
相关型号：
IPP030N10N3GXKSA1
Power Field-Effect Transistor, 100A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
IPP030N10N5
Power Field-Effect Transistor, 120A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON
IPP030N10N5AKSA1
Power Field-Effect Transistor, 120A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON
IPP032N06N3 G
OptiMOS ™ 60V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机以及平板电脑充电器中的电源。此外，这些器件可用于电机控制、太阳能微逆变器和快速开关直流-直流转换器等广泛工业应用。
INFINEON
IPP032N06N3G
OptiMOS™3 Power-Transistor Features Ideal for high frequency switching and sync. rec.
INFINEON
IPP032N06N3GXKSA1
Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
IPP034N03LGXKSA1
Power Field-Effect Transistor, 80A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
IPP034N08N5
OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.
INFINEON
IPP034NE7N3G
OptiMOSTM3 Power-Transistor Features Optimized technology for synchronous rectification
INFINEON
©2020 ICPDF网 联系我们和版权申明