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IPP032N06N3 G [INFINEON]

OptiMOS ™ 60V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机以及平板电脑充电器中的电源。此外，这些器件可用于电机控制、太阳能微逆变器和快速开关直流-直流转换器等广泛工业应用。;
IPP032N06N3 G
型号： IPP032N06N3 G
厂家： Infineon    Infineon
描述：

OptiMOS ™ 60V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机以及平板电脑充电器中的电源。此外，这些器件可用于电机控制、太阳能微逆变器和快速开关直流-直流转换器等广泛工业应用。

开关 电机 服务器 电脑 转换器
文件： 总11页 (文件大小：999K)
中文：  中文翻译
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IPB029N06N3 G IPI032N06N3 G  
IPP032N06N3 G  
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IPB029N06N3 G IPI032N06N3 G  
IPP032N06N3 G  
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typ.  
Parameter  
Symbol Conditions  
Unit  
min.  
max.  
Thermal characteristics  
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IPB029N06N3 G IPI032N06N3 G  
IPP032N06N3 G  
Values  
typ.  
Parameter  
Symbol Conditions  
Unit  
min.  
max.  
Dynamic characteristics  
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IPB029N06N3 G IPI032N06N3 G  
IPP032N06N3 G  
1 Power dissipation  
2 Drain current  
P
`[`4R"T 8#  
I 94R"T 8ꢆꢌ V =H"ꢉ ꢊ .  
200  
140  
120  
100  
80  
150  
100  
50  
60  
40  
20  
0
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
T C [°C]  
T C [°C]  
3 Safe operating area  
I 94R"V 9Hꢆꢌ T 8ꢑ ꢎ ꢒ Tꢂ ꢌ D 4(  
@1B1=5D5Bꢘ t \  
4 Max. transient thermal impedance  
`T@84R"t \#  
Z
@1B1=5D5Bꢘ D 4t \'T  
103  
100  
ꢉ WC  
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ꢉ ꢊ WC  
(&-  
(&*  
102  
101  
100  
ꢉ ꢊ ꢊ WC  
(&)  
10-1  
(&(-  
(&(*  
ꢉ =C  
(&()  
C9>7<5 @E<C5  
ꢉ ꢊ =C  
98  
10-2  
10-1  
100  
101  
102  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
V DS [V]  
t p [s]  
+ 5Fꢀ ꢎ ꢀꢎ  
@175 ꢏ  
ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢉ  
IPB029N06N3 G IPI032N06N3 G  
IPP032N06N3 G  
5 Typ. output characteristics  
I 94R"V 9Hꢆꢌ T Vꢑ ꢎ ꢒ Tꢂ  
6 Typ. drain-source on resistance  
9H"[Z#4R"I 9ꢆꢌ T Vꢑ ꢎ ꢒ Tꢂ  
R
@1B1=5D5Bꢘ V =H  
@1B1=5D5Bꢘ V =H  
480  
8
ꢒ .  
ꢍ .  
ꢒ ꢀꢒ .  
ꢉ ꢊ .  
ꢔ .  
400  
320  
240  
160  
80  
6
4
2
0
ꢔ .  
ꢍ .  
ꢉ ꢊ .  
ꢒ ꢀꢒ .  
ꢒ .  
ꢏ ꢀꢒ .  
0
0
1
2
3
4
5
0
80  
160  
240  
320  
400  
480  
V DS [V]  
I D [A]  
7 Typ. transfer characteristics  
I 94R"V =Hꢆꢌ KV 9Hg5*gI 9gR 9H"[Z#YMd  
@1B1=5D5Bꢘ T V  
8 Typ. forward transconductance  
g R_4R"I 9ꢆꢌ T Vꢑ ꢎ ꢒ Tꢂ  
400  
350  
300  
250  
200  
150  
100  
50  
280  
240  
200  
160  
120  
80  
40  
ꢉ ꢔ ꢒ Tꢂ  
ꢎ ꢒ Tꢂ  
0
0
0
2
4
6
0
50  
100  
150  
200  
250  
300  
V GS [V]  
I D [A]  
+ 5Fꢀ ꢎ ꢀꢎ  
@175 ꢒ  
ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢉ  
IPB029N06N3 G IPI032N06N3 G  
IPP032N06N3 G  
9 Drain-source on-state resistance  
10 Typ. gate threshold voltage  
=H"`T#4R"T Vꢆꢌ V =H4V 9H  
R
9H"[Z#4R"T Vꢆꢌ I 9ꢑ ꢉ ꢊ ꢊ ꢓ ꢌ V =Hꢑ ꢉ ꢊ .  
V
@1B1=5D5Bꢘ I 9  
6
5
4
3.5  
3
ꢉ ꢉ ꢕ ꢊ Wꢓ  
4
ꢉ ꢉ ꢕ Wꢓ  
YMd  
2.5  
2
3
`e\  
1.5  
1
2
1
0
0.5  
0
-60  
-20  
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
100  
140  
180  
T j [°C]  
T j [°C]  
11 Typ. capacitances  
12 Forward characteristics of reverse diode  
I <4R"V H9  
C 4R"V 9Hꢆꢌ V =Hꢑ ꢊ .ꢌ f ꢑ ꢉ & " J  
#
@1B1=5D5Bꢘ T V  
105  
103  
ꢉ ꢔ ꢒ Tꢂ ꢈ =1H  
8U__  
ꢎ ꢒ Tꢂ  
104  
ꢉ ꢔ ꢒ Tꢂ  
102  
8[__  
103  
ꢎ ꢒ Tꢂ ꢈ =1H  
101  
8^__  
102  
101  
100  
0
0
20  
40  
60  
0.5  
1
1.5  
2
V DS [V]  
V SD [V]  
+ 5Fꢀ ꢎ ꢀꢎ  
@175 ꢍ  
ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢉ  
IPB029N06N3 G IPI032N06N3 G  
IPP032N06N3 G  
13 Avalanche characteristics  
6H4R"t 6Jꢆꢌ R =Hꢑ ꢎ ꢒ "  
14 Typ. gate charge  
=H4R"Q SM`Qꢆꢌ I 9ꢑ ꢉ ꢊ ꢊ ꢓ @E<C54  
V
I
@1B1=5D5Bꢘ T V"_`M^`#  
@1B1=5D5Bꢘ V 99  
103  
12  
ꢖ ꢊ .  
10  
8
ꢉ ꢎ .  
ꢏ ꢕ .  
102  
6
ꢉ ꢒ ꢊ Tꢂ  
ꢎ ꢒ Tꢂ  
ꢉ ꢊ ꢊ Tꢂ  
101  
4
2
100  
0
0
)
)(  
)((  
)(((  
50  
100  
150  
t AV [µs]  
Q gate [nC]  
15 Drain-source breakdown voltage  
16 Gate charge waveforms  
V
7G"9HH#4R"T Vꢆꢌ I 9ꢑ ꢉ =ꢓ  
70  
V =H  
Q g  
65  
60  
55  
50  
V S _"`T#  
Q S"`T#  
Q _c  
Q SP  
Q gate  
Q S_  
-60  
-20  
20  
60  
100  
140  
180  
T j [°C]  
+ 5Fꢀ ꢎ ꢀꢎ  
@175 ꢔ  
ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢉ  
IPB029N06N3 G IPI032N06N3 G  
IPP032N06N3 G  
PG-TO220-3  
+ 5Fꢀ ꢎ ꢀꢎ  
@175 ꢕ  
ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢉ  
IPB029N06N3 G IPI032N06N3 G  
IPP032N06N3 G  
PG-TO262-3 (I²-Pak)  
+ 5Fꢀ ꢎ ꢀꢎ  
@175 ꢐ  
ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢉ  
IPB029N06N3 G IPI032N06N3 G  
IPP032N06N3 G  
PG-TO263 (D²-Pak)  
+ 5Fꢀ ꢎ ꢀꢎ  
@175 ꢉ ꢊ  
ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢉ  
IPB029N06N3 G IPI032N06N3 G  
IPP032N06N3 G  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
© 2008 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
+ 5Fꢀ ꢎ ꢀꢎ  
@175 ꢉ ꢉ  
ꢎ ꢊ ꢊ ꢐ ꢇꢉ ꢎ ꢇꢉ ꢉ  

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INFINEON

IPP034N03LGXKSA1

 Power Field-Effect Transistor, 80A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON

IPP034N08N5

 OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.
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IPP034NE7N3 G

 75V OptiMOS™技术专注于同步整流应用。基于领先的80V技术，这些75V产品同时具有极低的导通电阻和出色的开关性能。
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IPP034NE7N3G

 OptiMOSTM3 Power-Transistor Features Optimized technology for synchronous rectification
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IPP034NE7N3GXKSA1

 Power Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON

IPP037N06L3G

 Power Field-Effect Transistor, 90A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON

IPP037N06L3GXKSA1

 Power Field-Effect Transistor, 90A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON

IPP037N08N3 G

 OptiMOS™ 系列是高效率解决方案的市场领导者，适用于发电（例如太阳能微逆变器）、电源（例如服务器和通信）以及功耗（例如电动车）领域。
INFINEON

IPP037N08N3G

 OptiMOS3 Power-Transistor
INFINEON
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