IPP037N08N3 G [INFINEON]
OptiMOS™ 系列是高效率解决方案的市场领导者，适用于发电（例如太阳能微逆变器）、电源（例如服务器和通信）以及功耗（例如电动车）领域。;
| 型号： | IPP037N08N3 G |
| 厂家： | 
Infineon |
| 描述： | OptiMOS™ 系列是高效率解决方案的市场领导者，适用于发电（例如太阳能微逆变器）、电源（例如服务器和通信）以及功耗（例如电动车）领域。 通信 服务器 |
| 文件： | 总11页 (文件大小：498K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
OptiMOS™3 Power-Transistor
Product Summary
Features
V DS
80
3.5
100
V
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance RDS(on)
R DS(on),max
I D
mΩ
A
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
IPP037N08N3 G
IPI037N08N3 G
IPB035N08N3 G
Package
Marking
PG-TO220-3
037N08N
PG-TO262-3
037N08N
PG-TO263-3
035N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
T C=25 °C2)
I D
Continuous drain current
100
100
A
T C=100 °C
Pulsed drain current2)
I D,pulse
E AS
T C=25 °C
400
Avalanche energy, single pulse3)
I D=100 A, R GS=25 Ω
510
mJ
V
V GS
Gate source voltage
±20
P tot
T C=25 °C
Power dissipation
214
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
1)J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
Rev. 2.4
page 1
2010-06-23
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
Thermal resistance,
-
-
-
-
-
-
0.7
62
40
K/W
R thJA
minimal footprint
6 cm2 cooling area4)
junction - ambient
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=1 mA
Drain-source breakdown voltage
Gate threshold voltage
80
2
-
-
V
DS=V GS, I D=155 µA
2.8
3.5
V
DS=80 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
T j=25 °C
V
DS=80 V, V GS=0 V,
100
T j=125 °C
I GSS
V
V
V
V
V
GS=20 V, V DS=0 V
GS=10 V, I D=100 A
GS=6 V, I D=50 A
GS=10 V, I D=100 A
GS=6 V, I D=50 A
Gate-source leakage current
-
-
-
-
-
-
1
100 nA
R DS(on)
Drain-source on-state resistance
3.1
3.9
2.8
3.6
1.9
3.75
6.3
3.5
6.0
-
mΩ
R DS(on)
Drain-source on-state resistance
(SMD)
R G
g fs
Gate resistance
Ω
|V DS|>2|I D|R DS(on)max
I D=100 A
,
Transconductance
75
149
-
S
2
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.4
page 2
2010-06-23
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
6100
1640
59
8110 pF
V
GS=0 V, V DS=40 V,
C oss
C rss
t d(on)
t r
2180
-
f =1 MHz
23
-
-
-
-
ns
79
V
DD=40 V, V GS=10 V,
I D=100 A, R G=1.6 Ω
t d(off)
t f
Turn-off delay time
Fall time
45
14
Gate Charge Characteristics5)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
30
18
-
nC
V
Q gd
-
V
V
DD=40 V, I D=100 A,
Q sw
Q g
31
-
117
-
GS=0 to 10 V
Gate charge total
88
V plateau
Q oss
Gate plateau voltage
Output charge
5.0
119
V
DD=40 V, V GS=0 V
158 nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
100
400
A
T C=25 °C
I S,pulse
V
GS=0 V, I F=100 A,
V SD
Diode forward voltage
-
1.0
1.2
V
T j=25 °C
t rr
Reverse recovery time
-
-
73
-
-
ns
V R=40 V, I F=I S,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
136
nC
5) See figure 16 for gate charge parameter definition
Rev. 2.4
page 3
2010-06-23
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); V GS≥10 V
250
120
100
80
60
40
20
0
200
150
100
50
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJC=f(t p)
Z
parameter: D =t p/T
103
100
limited by on-state
resistance
1 µs
10 µs
0.5
0.2
100 µs
102
101
100
1 ms
10-1
0.1
10 ms
DC
0.05
0.02
0.01
single pulse
10-2
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
V
DS [V]
t p [s]
Rev. 2.4
page 4
2010-06-23
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: V GS
parameter: V GS
400
10
5.5 V
5 V
4.5 V
10 V
350
8
6
4
2
7 V
300
6 V
250
200
150
100
50
5.5 V
6 V
7 V
10 V
5 V
4.5 V
0
0
0
0
1
2
3
4
5
50
100
150
200
V
DS [V]
I
D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
300
250
200
150
100
200
150
100
50
50
175 °C
25 °C
0
0
0
2
4
6
8
0
50
100
150
V
GS [V]
ID [A]
Rev. 2.4
page 5
2010-06-23
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
GS(th)=f(T j); V GS=V DS
R
DS(on)=f(T j); I D=100 A; V GS=10 V
V
parameter: I D
8
4
3.5
3
6
1550 µA
2.5
2
155 µA
max
4
typ
1.5
1
2
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
103
Ciss
Coss
25 °C
175 °C, max
103
102
175 °C
25 °C, max
Crss
102
101
101
100
0
0
20
40
60
80
0.5
1
1.5
2
V
DS [V]
V
SD [V]
Rev. 2.4
page 6
2010-06-23
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=100 A pulsed
V
I
parameter: T j(start)
parameter: V DD
1000
12
40 V
10
8
20 V
60 V
100
10
25 °C
100 °C
6
150 °C
4
2
1
0
0
0.1
1
10
AV [µs]
100
1000
20
40
Q
60
gate [nC]
80
100
t
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
90
V GS
Q g
80
70
60
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.4
page 7
2010-06-23
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
PG-TO263-3 (D²-Pak)
Rev. 2.4
page 8
2010-06-23
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
PG-TO262-3 (I²-Pak)
Rev. 2.4
page 9
2010-06-23
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
PG-TO220-3
Rev. 2.4
page 10
2010-06-23
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.4
page 11
2010-06-23
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