IPP041N04NG [INFINEON]
OptiMOS?3 Power-Transistor; 的OptiMOS ™ 3功率三极管
| 型号： | IPP041N04NG |
| 厂家： | 
Infineon |
| 描述： | OptiMOS?3 Power-Transistor |
| 文件： | 总10页 (文件大小：282K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPP041N04N G
IPB041N04N G
OptiMOS™3 Power-Transistor
Product Summary
Features
V DS
40
4.1
80
V
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
R DS(on),max
I D
mΩ
A
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
IPB041N04N G
IPP041N04N G
Package
Marking
PG-TO263-3
041N04N
PG-TO220-3
041N04N
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Continuous drain current
80
80
A
Pulsed drain current2)
I D,pulse
I AS
T C=25 °C
400
80
Avalanche current, single pulse3)
Avalanche energy, single pulse
Gate source voltage
T C=25 °C
E AS
V GS
I D=80 A, R GS=25 Ω
60
mJ
V
±20
1) J-STD20 and JESD22
Rev. 1.2
page 1
2009-12-17
IPP041N04N G
IPB041N04N G
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
P tot
T C=25 °C
Power dissipation
94
W
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
°C
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
-
1.6
62
40
K/W
R thJA
minimal footprint
6 cm² cooling area4)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
Drain-source breakdown voltage
Gate threshold voltage
40
2
-
-
-
V
V GS(th)
V DS=V GS, I D=45 µA
4
V DS=40 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
V DS=40 V, V GS=0 V,
T j=125 °C
100
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
-
10
3.3
1.6
100 nA
Drain-source on-state resistance5)
Gate resistance
R DS(on) V GS=10 V, I D=80 A
4.1
-
mΩ
R G
Ω
|V DS|>2|I D|R DS(on)max
,
g fs
Transconductance
50
100
-
S
I D=80 A
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
5) Measured from drain tab to source pin
Rev. 1.2
page 2
2009-12-17
IPP041N04N G
IPB041N04N G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
-
-
-
-
-
-
-
3400
980
36
4500 pF
V
GS=0 V, V DS=20 V,
C oss
Crss
t d(on)
t r
1300
-
f =1 MHz
16
-
-
-
-
ns
3.8
23
V DD=20 V, V GS=10 V,
I D=30 A, R G=1.6 Ω
t d(off)
t f
Turn-off delay time
Fall time
4.8
Gate Charge Characteristics6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
18
10.3
5.3
-
-
nC
Q g(th)
Q gd
-
V DD=20 V, I D=30 A,
V GS=0 to 10 V
Q sw
12.5
42
-
Q g
Gate charge total
56
-
V plateau
Gate plateau voltage
5.1
V
V DS=0.1 V,
Q g(sync)
Gate charge total, sync. FET
Output charge
-
-
40
41
-
-
nC
V GS=0 to 10 V
Q oss
V DD=20 V, V GS=0 V
Reverse Diode
I S
Diode continuous forward current
Diode pulse current
-
-
-
-
78
A
T C=25 °C
I S,pulse
400
V GS=0 V, I F=80 A,
T j=25 °C
V SD
Diode forward voltage
-
-
0.96
46
1.2
-
V
V R=20 V, I F=I S,
di F/dt =400 A/µs
Q rr
Reverse recovery charge
nC
6) See figure 16 for gate charge parameter definition
Rev. 1.2
page 3
2009-12-17
IPP041N04N G
IPB041N04N G
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); V GS≥10 V
100
100
80
60
40
20
0
80
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
103
101
limited by on-state
resistance
1 µs
10 µs
100 µs
102
100
0.5
DC
1 ms
0.2
0.1
101
10 ms
10-1
0.05
0.02
0.01
100
single pulse
10-1
10-2
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
V DS [V]
t p [s]
Rev. 1.2
page 4
2009-12-17
IPP041N04N G
IPB041N04N G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
300
8
10 V
5.5 V
7
6 V
250
200
150
100
50
7 V
6.5 V
6
5
4
3
2
1
0
7 V
6.5 V
10 V
6 V
5.5 V
5 V
0
0
1
2
3
0
40
80
120
160
200
V DS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
300
250
200
150
100
50
120
100
80
60
40
20
0
175 °C
25 °C
0
0
2
4
6
8
0
20
40
60
80
100
V GS [V]
ID [A]
Rev. 1.2
page 5
2009-12-17
IPP041N04N G
IPB041N04N G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)=f(T j); I D=80 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS; I D=250 µA
8
7
6
4
3
2
1
0
5
98 %
4
typ
3
2
1
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
1000
25 °C, 98%
Ciss
Coss
175 °C, 98%
103
102
101
100
25 °C
175 °C
10
Crss
1
0
0
10
20
V DS [V]
30
40
0.5
1
1.5
2
V SD [V]
Rev. 1.2
page 6
2009-12-17
IPP041N04N G
IPB041N04N G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
V GS=f(Q gate); I D=30 A pulsed
parameter: V DD
I
parameter: T j(start)
100
12
10
8
20 V
8 V
25 °C
32 V
100 °C
150 °C
10
6
4
2
1
10-1
0
100
101
t AV [µs]
102
103
0
10
20
30
40
50
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
45
40
35
30
25
20
V GS
Q g
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.2
page 7
2009-12-17
IPP041N04N G
IPB041N04N G
Package Outline
PG-TO220-3-1
Rev. 1.2
page 8
2009-12-17
IPP041N04N G
IPB041N04N G
Package Outline
PG-TO263-3
Rev. 1.2
page 9
2009-12-17
IPP041N04N G
IPB041N04N G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.2
page 10
2009-12-17
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