IPP330P10NM [INFINEON]
TO-220 封装型 100 V OptiMOS™ P 沟道 MOSFET 是面向电池管理、负载开关和反极性保护应用的全新技术。P 沟道器件的主要优势在于降低中低功率应用的设计复杂度。此类产品可轻松连接 MCU，开关速度快且雪崩能力强，尤其适合质量要求高的应用。器件支持正常电平，具备较宽的 RDS(on) 范围和低 Qg，低负载下效率较高。;
| 型号： | IPP330P10NM |
| 厂家： | 
Infineon |
| 描述： | TO-220 封装型 100 V OptiMOS™ P 沟道 MOSFET 是面向电池管理、负载开关和反极性保护应用的全新技术。P 沟道器件的主要优势在于降低中低功率应用的设计复杂度。此类产品可轻松连接 MCU，开关速度快且雪崩能力强，尤其适合质量要求高的应用。器件支持正常电平，具备较宽的 RDS(on) 范围和低 Qg，低负载下效率较高。 电池 开关 |
| 文件： | 总11页 (文件大小：1967K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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