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IPP60R099P6 [INFINEON]

英飞凌 CoolMOS™ P6 超结 MOSFET 系列旨在实现更高的系统效率，同时易于在 CoolMOS™ P6 中设计，填补了专注于提供最佳性能的技术与更专注于易用性的技术之间的空白。;
IPP60R099P6
型号： IPP60R099P6
厂家： Infineon    Infineon
描述：

英飞凌 CoolMOS™ P6 超结 MOSFET 系列旨在实现更高的系统效率，同时易于在 CoolMOS™ P6 中设计，填补了专注于提供最佳性能的技术与更专注于易用性的技术之间的空白。
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中文：  中文翻译
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MOSFET  
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor  
CoolMOS™ꢀP6  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPx60R099P6  
DataꢀSheet  
Rev.ꢀ2.1  
Final  
PowerꢀManagementꢀ&ꢀMultimarket  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6  
TO-247  
TO-220  
TO-220ꢀFP  
1ꢀꢀꢀꢀꢀDescription  
tab  
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower  
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand  
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀP6ꢀseriesꢀcombinesꢀthe  
experienceꢀofꢀtheꢀleadingꢀSJꢀMOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.  
TheꢀofferedꢀdevicesꢀprovideꢀallꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSJꢀMOSFET  
whileꢀnotꢀsacrificingꢀeaseꢀofꢀuse.ꢀExtremelyꢀlowꢀswitchingꢀandꢀconduction  
lossesꢀmakeꢀswitchingꢀapplicationsꢀevenꢀmoreꢀefficient,ꢀmoreꢀcompact,  
lighterꢀandꢀcooler.  
Drain  
Pin 2, Tab  
Features  
Gate  
Pin 1  
•ꢀIncreasedꢀMOSFETꢀdv/dtꢀruggedness  
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss  
•ꢀVeryꢀhighꢀcommutationꢀruggedness  
Source  
Pin 3  
•ꢀEasyꢀtoꢀuse/drive  
•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound  
•ꢀQualifiedꢀforꢀindustrialꢀgradeꢀapplicationsꢀaccordingꢀtoꢀJEDECꢀ(J-STD20  
andꢀJESD22)  
Applications  
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages  
forꢀe.g.ꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTV,ꢀLighting,ꢀServer,ꢀTelecom  
andꢀUPS.  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
Qg.typ  
Value  
650  
99  
Unit  
V
mΩ  
nC  
A
70  
ID,pulse  
109  
8.8  
Eoss@400V  
Body diode di/dt  
µJ  
300  
A/µs  
Typeꢀ/ꢀOrderingꢀCode  
IPW60R099P6  
Package  
Marking  
RelatedꢀLinks  
PG-TO 247  
PG-TO 220  
IPP60R099P6  
6R099P6  
see Appendix A  
IPA60R099P6  
PG-TO 220 FullPAK  
Final Data Sheet  
2
Rev.ꢀ2.1,ꢀꢀ2015-05-18  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Final Data Sheet  
3
Rev.ꢀ2.1,ꢀꢀ2015-05-18  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6  
2ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
-
-
-
-
37.9  
24.0  
TC=25°C  
TC=100°C  
Continuous drain current1)  
ID  
A
Pulsed drain current2)  
ID,pulse  
EAS  
-
-
-
-
-
-
-
-
109  
796  
1.21  
6.6  
100  
20  
A
TC=25°C  
Avalanche energy, single pulse  
Avalanche energy, repetitive  
Avalanche current, repetitive  
MOSFET dv/dt ruggedness  
Gate source voltage (static)  
Gate source voltage (dynamic)  
-
mJ  
mJ  
A
ID=6.6A; VDD=50V; see table 10  
EAR  
-
ID=6.6A; VDD=50V; see table 10  
-
IAR  
-
dv/dt  
VGS  
VGS  
-
V/ns VDS=0...400V  
-20  
-30  
V
V
static;  
30  
AC (f>1 Hz)  
Power dissipation (Non FullPAK)  
TO-220, TO-247  
Ptot  
Ptot  
-
-
-
-
278  
34  
W
W
TC=25°C  
TC=25°C  
Power dissipation (FullPAK)  
TO-220FP  
Storage temperature  
Tstg  
Tj  
-55  
-55  
-
-
150  
150  
°C  
°C  
-
-
Operating junction temperature  
Mounting torque (Non FullPAK)  
TO-220, TO-247  
-
-
-
-
-
-
60  
50  
Ncm M3 and M3.5 screws  
Ncm M2.5 screws  
Mounting torque (FullPAK)  
TO-220FP  
Continuous diode forward current  
Diode pulse current2)  
IS  
-
-
-
-
32.9  
109  
A
A
TC=25°C  
IS,pulse  
TC=25°C  
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ  
see table 8  
Reverse diode dv/dt3)  
dv/dt  
dif/dt  
VISO  
-
-
-
-
-
-
15  
V/ns  
A/µs  
V
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ  
see table 8  
Maximum diode commutation speed  
300  
2500  
Insulation withstand voltage for  
TO-220FP  
Vrms,ꢀTC=25°C,ꢀt=1min  
1) Limited by Tj max. Maximum duty cycle D=0.75  
2) Pulse width tp limited by Tj,max  
3)ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG  
Final Data Sheet  
4
Rev.ꢀ2.1,ꢀꢀ2015-05-18  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6  
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀ(NonꢀFullPAK)ꢀTO-220,ꢀTO-247  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
0.45  
62  
Thermal resistance, junction - case  
RthJC  
-
-
-
-
°C/W -  
Thermal resistance, junction - ambient RthJA  
°C/W leaded  
Soldering temperature, wavesoldering  
only allowed at leads  
Tsold  
-
-
260  
°C  
1.6mm (0.063 in.) from case for 10s  
Tableꢀ4ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀ(FullPAK)ꢀTO-220FP  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
3.65  
80  
Thermal resistance, junction - case  
RthJC  
-
-
-
-
°C/W -  
Thermal resistance, junction - ambient RthJA  
°C/W leaded  
Soldering temperature, wavesoldering  
only allowed at leads  
Tsold  
-
-
260  
°C  
1.6mm (0.063 in.) from case for 10s  
Final Data Sheet  
5
Rev.ꢀ2.1,ꢀꢀ2015-05-18  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ5ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
600  
3.5  
Typ.  
-
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
V(GS)th  
V
V
VGS=0V,ꢀID=1mA  
4.0  
4.5  
VDS=VGS,ꢀID=1.21mA  
-
-
-
10  
5
-
VDS=600,ꢀVGS=0V,ꢀTj=25°C  
VDS=600,ꢀVGS=0V,ꢀTj=150°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance  
IDSS  
µA  
nA  
Ω
IGSS  
-
-
100  
VGS=20V,ꢀVDS=0V  
-
-
0.089 0.099  
0.232  
VGS=10V,ꢀID=14.5A,ꢀTj=25°C  
VGS=10V,ꢀID=14.5A,ꢀTj=150°C  
RDS(on)  
RG  
-
-
1
-
Ω
f=1MHz,ꢀopenꢀdrain  
Tableꢀ6ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance  
Ciss  
-
-
3330  
140  
-
-
pF  
pF  
VGS=0V,ꢀVDS=100V,ꢀf=1MHz  
VGS=0V,ꢀVDS=100V,ꢀf=1MHz  
Coss  
Effective output capacitance, energy  
related1)  
Co(er)  
Co(tr)  
td(on)  
tr  
-
-
-
-
-
-
110  
495  
20  
10  
50  
5
-
-
-
-
-
-
pF  
pF  
ns  
ns  
ns  
ns  
VGS=0V,ꢀVDS=0...400V  
Effective output capacitance, time  
related2)  
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V  
VDD=400V,ꢀVGS=13V,ꢀID=18.1A,  
RG=1.7Ω;ꢀseeꢀtableꢀ9  
Turn-on delay time  
Rise time  
VDD=400V,ꢀVGS=13V,ꢀID=18.1A,  
RG=1.7Ω;ꢀseeꢀtableꢀ9  
VDD=400V,ꢀVGS=13V,ꢀID=18.1A,  
RG=1.7Ω;ꢀseeꢀtableꢀ9  
Turn-off delay time  
Fall time  
td(off)  
tf  
VDD=400V,ꢀVGS=13ꢀV,ꢀID=18.1A,  
RG=1.7Ω;ꢀseeꢀtableꢀ9  
Tableꢀ7ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  
Values  
Typ.  
20  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
V
VDD=400V,ꢀID=18.1A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=18.1A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=18.1A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=18.1A,ꢀVGS=0ꢀtoꢀ10V  
Qgd  
24  
Qg  
70  
Gate plateau voltage  
Vplateau  
6.1  
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
Final Data Sheet  
6
Rev.ꢀ2.1,ꢀꢀ2015-05-18  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6  
Tableꢀ8ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
Diode forward voltage  
Reverse recovery time  
VSD  
trr  
-
0.9  
-
V
VGS=0V,ꢀIF=18.1A,ꢀTj=25°C  
VR=400V,ꢀIF=18.1A,ꢀdiF/dt=100A/µs;  
see table 8  
-
-
-
470  
9
-
-
-
ns  
VR=400V,ꢀIF=18.1A,ꢀdiF/dt=100A/µs;  
see table 8  
Reverse recovery charge  
Qrr  
Irrm  
µC  
A
VR=400V,ꢀIF=18.1A,ꢀdiF/dt=100A/µs;  
see table 8  
Peak reverse recovery current  
37  
Final Data Sheet  
7
Rev.ꢀ2.1,ꢀꢀ2015-05-18  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6  
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipationꢀ(NonꢀFullPAK)  
Diagramꢀ2:ꢀPowerꢀdissipationꢀ(FullPAK)  
300  
40  
35  
30  
25  
20  
15  
10  
5
250  
200  
150  
100  
50  
0
0
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
Ptot=f(TC)  
Diagramꢀ3:ꢀMax.ꢀtransientꢀthermalꢀimpedanceꢀ(NonꢀFullPAK) Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedanceꢀ(FullPAK)  
101  
101  
0.5  
100  
100  
0.2  
0.1  
0.5  
0.05  
0.2  
0.1  
0.02  
0.01  
10-1  
10-1  
0.05  
0.02  
0.01  
single pulse  
10-4  
10-2 single pulse  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
10-5  
10-3  
10-2  
10-1  
100  
101  
tpꢀ[s]  
tpꢀ[s]  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
8
Rev.ꢀ2.1,ꢀꢀ2015-05-18  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6  
Diagramꢀ5:ꢀSafeꢀoperatingꢀareaꢀ(NonꢀFullPAK)  
Diagramꢀ6:ꢀSafeꢀoperatingꢀareaꢀ(FullPAK)  
103  
103  
1 µs  
102  
1 µs  
10 µs  
100 µs  
102  
101  
10 µs  
100 µs  
101  
1 ms  
1 ms  
100  
10 ms  
10 ms  
100  
10-1  
10-2  
10-3  
DC  
10-1  
10-2  
DC  
10-3  
10-4  
100  
101  
102  
103  
100  
101  
102  
103  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Diagramꢀ7:ꢀSafeꢀoperatingꢀareaꢀ(NonꢀFullPAK)  
Diagramꢀ8:ꢀSafeꢀoperatingꢀareaꢀ(FullPAK)  
102  
102  
1 µs  
1 µs  
10 µs  
10 µs  
100 µs  
100 µs  
101  
101  
100  
1 ms  
10 ms  
1 ms  
10 ms  
100  
10-1  
10-2  
10-3  
10-4  
DC  
10-1  
10-2  
10-3  
DC  
100  
101  
102  
103  
100  
101  
102  
103  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Final Data Sheet  
9
Rev.ꢀ2.1,ꢀꢀ2015-05-18  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6  
Diagramꢀ9:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ10:ꢀTyp.ꢀoutputꢀcharacteristics  
120  
70  
20 V  
65  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
20 V  
10 V  
10 V  
8 V  
60  
8 V  
55  
50  
7 V  
45  
40  
35  
30  
25  
20  
15  
10  
5
7 V  
6 V  
5.5 V  
6 V  
5 V  
5.5 V  
5 V  
4.5 V  
4.5 V  
0
0
0
5
10  
15  
20  
0
5
10  
15  
20  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ11:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ12:ꢀDrain-sourceꢀon-stateꢀresistance  
0.55  
0.30  
0.50  
0.45  
0.40  
0.25  
0.20  
5.5 V  
6.5 V  
7 V  
6 V  
0.35  
0.30  
0.25  
0.20  
0.15  
10 V  
0.15  
20 V  
typ  
98%  
0.10  
0.05  
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
IDꢀ[A]  
Tjꢀ[°C]  
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(Tj);ꢀID=14.5ꢀA;ꢀVGS=10ꢀV  
Final Data Sheet  
10  
Rev.ꢀ2.1,ꢀꢀ2015-05-18  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6  
Diagramꢀ13:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
120  
10  
9
8
25 °C  
100  
80  
60  
40  
20  
0
120 V  
480 V  
7
6
5
4
3
2
1
0
150 °C  
0
2
4
6
8
10  
12  
14  
0
10  
20  
30  
40  
50  
60  
70  
80  
VGSꢀ[V]  
Qgateꢀ[nC]  
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj  
VGS=f(Qgate);ꢀID=18.1ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
Diagramꢀ16:ꢀAvalancheꢀenergy  
102  
800  
700  
600  
500  
400  
300  
200  
100  
0
101  
125 °C  
25 °C  
100  
10-1  
0.0  
0.5  
1.0  
1.5  
2.0  
25  
50  
75  
100  
125  
150  
VSDꢀ[V]  
Tjꢀ[°C]  
IF=f(VSD);ꢀparameter:ꢀTj  
EAS=f(Tj);ꢀID=6.6ꢀA;ꢀVDD=50ꢀV  
Final Data Sheet  
11  
Rev.ꢀ2.1,ꢀꢀ2015-05-18  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6  
Diagramꢀ17:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagramꢀ18:ꢀTyp.ꢀcapacitances  
700  
104  
Ciss  
680  
660  
640  
620  
600  
580  
560  
540  
520  
103  
Coss  
102  
101  
Crss  
100  
-75 -50 -25  
0
25  
50  
75 100 125 150 175  
0
100  
200  
300  
400  
500  
Tjꢀ[°C]  
VDSꢀ[V]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
Diagramꢀ19:ꢀTyp.ꢀCossꢀstoredꢀenergy  
10  
9
8
7
6
5
4
3
2
1
0
0
100  
200  
300  
400  
500  
VDSꢀ[V]  
Eoss=f(VDS  
)
Final Data Sheet  
12  
Rev.ꢀ2.1,ꢀꢀ2015-05-18  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6  
6ꢀꢀꢀꢀꢀTestꢀCircuits  
Tableꢀ9ꢀꢀꢀꢀꢀDiodeꢀcharacteristics  
Test circuit for diode characteristics  
Diode recovery waveform  
V,I  
Rg1  
VDS(peak)  
VDS  
VDS  
trr  
VDS  
IF  
tF  
tS  
dIF / dt  
Rg 2  
IF  
t
10%Irrm  
Q
F
Q
S
IF  
dI / dt  
rr  
trr =tF +tS  
rr  
Irrm  
Q =QF +Q  
S
Rg1 = Rg 2  
Tableꢀ10ꢀꢀꢀꢀꢀSwitchingꢀtimes  
Switching times test circuit for inductive load  
Switching times waveform  
VDS  
90%  
10%  
VDS  
VGS  
VGS  
td(off)  
tf  
td(on)  
ton  
tr  
toff  
Tableꢀ11ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload  
Unclamped inductive load test circuit  
Unclamped inductive waveform  
V(BR)DS  
ID  
VDS  
VDS  
VDS  
ID  
Final Data Sheet  
13  
Rev.ꢀ2.1,ꢀꢀ2015-05-18  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6  
7ꢀꢀꢀꢀꢀPackageꢀOutlines  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ247,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
14  
Rev.ꢀ2.1,ꢀꢀ2015-05-18  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6  
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
15  
Rev.ꢀ2.1,ꢀꢀ2015-05-18  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6  
MILLIMETERS  
INCHES  
DIM  
MIN  
4.50  
2.34  
2.42  
0.65  
0.95  
0.95  
0.65  
0.65  
0.40  
MAX  
4.90  
2.85  
2.86  
0.90  
1.38  
1.51  
1.38  
1.51  
0.63  
16.15  
9.83  
10.65  
MIN  
MAX  
0.193  
0.112  
0.113  
0.035  
0.054  
0.059  
0.054  
0.059  
0.025  
0.636  
0.387  
0.419  
DOCUMENT NO.  
Z8B00003319  
A
A1  
A2  
b
0.177  
0.092  
0.095  
0.026  
0.037  
0.037  
0.026  
0.026  
0.016  
0.617  
0.353  
0.394  
0
SCALE  
b1  
b2  
b3  
b4  
c
2.5  
0
2.5  
5mm  
D
15.67  
8.97  
EUROPEAN PROJECTION  
D1  
E
10.00  
2.54 (BSC)  
0.100 (BSC)  
e
e1  
N
5.08  
3
0.200  
3
H
28.70  
12.78  
2.83  
29.75  
13.75  
3.45  
1.130  
0.503  
0.111  
0.116  
0.124  
1.171  
0.541  
0.136  
0.133  
0.138  
ISSUE DATE  
05-05-2014  
L
L1  
¡3  
Q
REVISION  
2.95  
3.38  
04  
3.15  
3.50  
Figureꢀ3ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220ꢀFullPAK,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
16  
Rev.ꢀ2.1,ꢀꢀ2015-05-18  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6  
8ꢀꢀꢀꢀꢀAppendixꢀA  
Tableꢀ12ꢀꢀꢀꢀꢀRelatedꢀLinks  
• IFXꢀCoolMOSTMꢀP6ꢀWebpage:ꢀwww.infineon.com  
• IFXꢀCoolMOSTMꢀP6ꢀapplicationꢀnote:ꢀwww.infineon.com  
• IFXꢀCoolMOSTMꢀP6ꢀsimulationꢀmodel:ꢀwww.infineon.com  
• IFXꢀDesignꢀtools:ꢀwww.infineon.com  
Final Data Sheet  
17  
Rev.ꢀ2.1,ꢀꢀ2015-05-18  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6  
RevisionꢀHistory  
IPW60R099P6, IPP60R099P6, IPA60R099P6  
Revision:ꢀ2015-05-18,ꢀRev.ꢀ2.1  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
Release of final version  
Rdson max change from 105 to 99mOhm  
2.0  
2.1  
2014-03-07  
2015-05-18  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2015ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWith  
respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication  
ofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout  
limitation,ꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
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Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
18  
Rev.ꢀ2.1,ꢀꢀ2015-05-18  

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