IPP60R600E6 [INFINEON]
600V CoolMOS E6 Power Transistor; 600V的CoolMOS E6功率晶体管
| 型号： | IPP60R600E6 |
| 厂家： | 
Infineon |
| 描述： | 600V CoolMOS E6 Power Transistor |
| 文件： | 总17页 (文件大小：1340K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS E6
600V CoolMOS™ E6 Power Transistor
IPx60R600E6
Data Sheet
Rev. 2.0, 2010-04-12
Final
Industrial & Multimarket
600V CoolMOS™ E6 Power Transistor
IPD60R600E6, IPP60R600E6
IPD60R600E6
1
Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle
and pioneered by Infineon Technologies. CoolMOS™ E6 series
combines the experience of the leading SJ MOSFET supplier with
high class innovation. The offered devices provide all benefits of a
fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching
applications even more efficient, more compact, lighter, and cooler.
Features
•
•
•
•
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Easy to use/drive
JEDEC1) qualified, Pb-free plating, halogen free (excluding
TO-252)
drain
pin 2
gate
pin 1
Applications
source
pin 3
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on the
gate or separate totem poles is generally recommended.
Table 1
Key Performance Parameters
Parameter
VDS @ Tj,max
RDS(on),max
Qg,typ
Value
650
0.6
Unit
V
!
20.5
19
nC
A
ID,pulse
E
oss @ 400V
1.9
µJ
A/µs
Body diode di/dt
500
Type / Ordering Code
IPD60R600E6
Package
Marking
Related Links
PG-TO252
PG-TO220
IFX CoolMOS Webpage
IFX Design tools
IPP60R600E6
6R600E6
IPA60R600E6
PG-TO220 FullPAK
1) J-STD20 and JESD22
FinalData Sheet
2
Rev. 2.0, 2010-04-12
600V CoolMOS™ E6 Power Transistor
IPx60R600E6
Table of Contents
Table of Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2
3
4
5
6
7
8
FinalData Sheet
3
Rev. 2.0, 2010-04-12
600V CoolMOS™ E6 Power Transistor
IPx60R600E6
Maximum ratings
2
Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2
Maximum ratings
Parameter
Symbol
Values
Min. Typ. Max.
Unit Note / Test Condition
Continuous drain current1)
ID
-
-
7.3
4.6
19
A
TC= 25 °C
TC= 100°C
TC=25 °C
Pulsed drain current2)
ID,pulse
EAS
-
-
-
-
A
Avalanche energy, single pulse
133
mJ
ID=1.3 A,VDD=50 V
(see table 21)
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
EAR
IAR
-
-
-
-
-
0.2
1.3
50
20
30
63
ID=1.3 A,VDD=50 V
-
A
dv/dt
VGS
-
V/ns VDS=0...480 V
-20
-30
-
V
static
AC (f>1 Hz)
TC=25 °C
Power dissipation for
TO-220, TO-252
Ptot
Ptot
-
-
W
W
°C
Power dissipation for
TO-220 FullPAK
-
28
TC=25 °C
Operating and storage temperature Tj,Tstg
-55
-
-
-
150
60
Mounting torque
TO-220
Ncm M3 and M3.5 screws
Mounting torque
TO-220 FullPAK
50
M2.5 screws
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt3)
IS
-
-
-
-
-
-
6.3
19
15
A
A
TC=25 °C
TC=25 °C
IS,pulse
dv/dt
V/ns VDS=0...400 V,ISD " ID,
Tj=25 °C
Maximum diode commutation
speed3)
dif/dt
500
A/µs (see table 22)
1) Limited by Tj,max. Maximum duty cycle D=0.75
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
FinalData Sheet
4
Rev. 2.0, 2010-04-12
600V CoolMOS™ E6 Power Transistor
IPx60R600E6
Thermal characteristics
3
Thermal characteristics
Table 3
Thermal characteristics TO-220 (IPP60R600E6)
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
2.0
Thermal resistance, junction - case RthJC
-
-
-
-
°C/W
Thermal resistance, junction -
ambient
RthJA
62
leaded
Soldering temperature,
wavesoldering only allowed at
leads
Tsold
-
-
260
°C
1.6 mm (0.063 in.)
from case for 10 s
Table 4
Thermal characteristics TO-220FullPAK (IPA60R600E6)
Symbol Values
Typ.
Parameter
Unit
Note /
Test Condition
Min.
Max.
4.5
Thermal resistance, junction - case RthJC
-
-
-
-
°C/W
Thermal resistance, junction -
ambient
RthJA
80
leaded
Soldering temperature,
wavesoldering only allowed at
leads
Tsold
-
-
260
°C
1.6 mm (0.063 in.)
from case for 10 s
Table 5
Thermal characteristics TO-252 (IPD60R600E6)
Symbol Values
Parameter
Unit
Note /
Test Condition
Min.
Typ.
Max.
2.0
Thermal resistance, junction - case RthJC
-
-
-
-
°C/W
Thermal resistance, junction -
ambient
RthJA
62
SMD version, device
on PCB, minimal
footprint
35
SMD version, device
on PCB, 6cm2 cooling
area1)
Soldering temperature,
Tsold
-
-
260
°C
reflow MSL1
wave- & reflow soldering allowed
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm2 copper area (thickness 70µm) for drain connection.
PCB is vertical without air stream cooling.
FinalData Sheet
5
Rev. 2.0, 2010-04-12
600V CoolMOS™ E6 Power Transistor
IPx60R600E6
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 6
Static characteristics
Symbol
Parameter
Values
Unit
V
Note / Test Condition
Min.
600
2.5
-
Typ.
Max.
Drain-source breakdown voltage V(BR)DSS
-
-
V
V
V
GS=0 V, ID=0.25 mA
DS=VGS, ID=0.20mA
DS=600 V, VGS=0 V,
Gate threshold voltage
VGS(th)
IDSS
3
-
3.5
1
Zero gate voltage drain current
µA
Tj=25 °C
DS=600 V, VGS=0 V,
Tj=150 °C
-
10
-
V
Gate-source leakage current
IGSS
-
-
-
100
nA
V
V
GS=20 V, VDS=0 V
Drain-source on-state resistance RDS(on)
0.54
0.60
!
GS=10 V, ID=2.4 A,
Tj=25 °C
-
-
1.40
10
-
-
VGS=10 V, ID=2.4A,
Tj=150 °C
Gate resistance
RG
!
f=1 MHz, open drain
Table 7
Dynamic characteristics
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
440
30
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
-
-
pF
V
GS=0 V, VDS=100 V,
f=1 MHz
Coss
Co(er)
Effective output capacitance,
energy related1)
21
V
V
GS=0 V,
DS=0...480 V
Effective output capacitance, time Co(tr)
-
88
-
ID=constant, VGS=0 V
related2)
V
DS=0...480V
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
10
8
-
-
-
-
ns
V
V
DD=400 V,
GS=13 V, ID=3 A,
RG= 6.8 !
(see table 20)
Turn-off delay time
Fall time
58
11
1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
FinalData Sheet
6
Rev. 2.0, 2010-04-12
600V CoolMOS™ E6 Power Transistor
IPx60R600E6
Electrical characteristics
Table 8
Gate charge characteristics
Symbol
Parameter
Values
Typ.
Unit
Note /
Test Condition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
2.5
-
-
-
-
nC
V
V
DD=480 V, ID=3.0A,
GS=0 to 10 V
Qgd
10.5
20.5
5.4
Qg
Gate plateau voltage
Vplateau
V
Table 9
Reverse diode characteristics
Symbol
Parameter
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Diode forward voltage
VSD
-
0.9
-
V
VGS=0 V, IF=3.0A,
Tj=25 °C
Reverse recovery time
trr
-
-
-
250
2.1
16
-
-
-
ns
µC
A
VR=400 V, IF=3.0A,
diF/dt=100 A/µs
(see table 22)
Reverse recovery charge
Peak reverse recovery current
Qrr
Irrm
FinalData Sheet
7
Rev. 2.0, 2010-04-12
600V CoolMOS™ E6 Power Transistor
IPx60R600E6
Electrical characteristics diagrams
5
Electrical characteristics diagrams
Table 10
Power dissipation
TO-220, TO-252
Power dissipation
TO-220 FullPAK
Ptot = f(TC)
Ptot = f(TC)
Table 11
Max. transient thermal impedance
TO-220, TO-252
Max. transient thermal impedance
TO-220 FullPAK
Z
(thJC)=f(tp); parameter: D=tp/T
Z(thJC)=f(tp); parameter: D=tp/T
FinalData Sheet
8
Rev. 2.0, 2010-04-12
600V CoolMOS™ E6 Power Transistor
IPx60R600E6
Electrical characteristics diagrams
Table 12
Safe operating area TC=25 °C
Safe operating area TC=25 °C
TO-220, TO-252
TO-220 FullPAK
ID=f(VDS); TC=25 °C; D=0; parameter tp
ID=f(VDS); TC=25 °C; D=0; parameter tp
Table 13
Safe operating area TC=80 °C
Safe operating area TC=80 °C
TO-220, TO-252
TO-220 FullPAK
ID=f(VDS); TC=80 °C; D=0; parameter tp
ID=f(VDS); TC=80 °C; D=0; parameter tp
FinalData Sheet
9
Rev. 2.0, 2010-04-12
600V CoolMOS™ E6 Power Transistor
IPx60R600E6
Electrical characteristics diagrams
Table 14
Typ. output characteristics TC=25 °C
Typ. output characteristics Tj=125 °C
ID=f(VDS); Tj=25 °C; parameter: VGS
ID=f(VDS); Tj=125 °C; parameter: VGS
Table 15
Typ. drain-source on-state resistance
Drain-source on-state resistance
RDS(on)=f(ID); Tj=125 °C; parameter: VGS
RDS(on)=f(Tj); ID=2.4 A; VGS=10 V
FinalData Sheet
10
Rev. 2.0, 2010-04-12
600V CoolMOS™ E6 Power Transistor
IPx60R600E6
Electrical characteristics diagrams
Table 16
Typ. transfer characteristics
Typ. gate charge
ID=f(VGS); VDS=20V
VGS=f(Qgate), ID=3.0A pulsed
Table 17
Avalanche energy
Drain-source breakdown voltage
EAS=f(Tj); ID=1.3 A; VDD=50 V
VBR(DSS)=f(Tj); ID=0.25 mA
FinalData Sheet
11
Rev. 2.0, 2010-04-12
600V CoolMOS™ E6 Power Transistor
IPx60R600E6
Electrical characteristics diagrams
Table 18
Typ. capacitances
Typ. Coss stored energy
C=f(VDS); VGS=0 V; f=1 MHz
EOSS=f(VDS)
Table 19
Forward characteristics of reverse diode
IF=f(VSD); parameter: Tj
FinalData Sheet
12
Rev. 2.0, 2010-04-12
600V CoolMOS™ E6 Power Transistor
IPx60R600E6
Test circuits
6
Test circuits
Table 20
Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load
Switching time waveform
VDS
90%
VDS
VGS
10%
VGS
td(off)
td(on)
ton
tf
tr
toff
Table 21
Unclamped inductive load test circuit and waveform
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
VD
ID
VDS
VDS
VDS
ID
Table 22
Test circuit and waveform for diode characteristics
Test circuit for diode characteristics
Diode recovery waveform
ID
$
@
$
4 )@%
%
LL 1
%
% %
; 4
RG1
"
LL 1
"
%
"
;
4
%
LL
4
%
%
;
4
VDS
+*"
%
998
"
"
4
RG2
;
998
@$LL )@%
#
998
0*"
998
RG1 = RG2
;57***//
FinalData Sheet
13
Rev. 2.0, 2010-04-12
600V CoolMOS™ E6 Power Transistor
IPx60R600E6
Package outlines
7
Package outlines
Figure 1
Outlines TO-220, dimensions in mm/inches
FinalData Sheet
14
Rev. 2.0, 2010-04-12
600V CoolMOS™ E6 Power Transistor
IPx60R600E6
Package outlines
Figure 2
Outlines TO-220 FullPAK, dimensions in mm/inches
FinalData Sheet
15
Rev. 2.0, 2010-04-12
600V CoolMOS™ E6 Power Transistor
IPx60R600E6
Package outlines
Figure 3
Outlines TO-252, dimensions in mm/inches
FinalData Sheet
16
Rev. 2.0, 2010-04-12
600V CoolMOS™ E6 Power Transistor
IPx60R600E6
Revision History
8
Revision History
CoolMOS E6 600V CoolMOS™ E6 Power Transistor
Revision History: 2010-04-12, Rev. 2.0
Previous Revision:
Revision Subjects (major changes since last revision)
2.0
Release of final data sheet
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Edition 2010-04-12
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that
life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that
device or system. Life support devices or systems are intended to be implanted in the human body or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
FinalData Sheet
18
Rev. 2.0, 2010-04-12
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