IPP60R950C6 [INFINEON]
Metal Oxide Semiconductor Field Effect Transistor; 金属氧化物半导体场效应晶体管型号: | IPP60R950C6 |
厂家: | Infineon |
描述: | Metal Oxide Semiconductor Field Effect Transistor |
文件: | 总18页 (文件大小:1921K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS C6
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Data Sheet
Rev. 2.1, 2010-03-11
Final
Industrial & Multimarket
600V CoolMOS™ C6 Power Transistor
IPD60R950C6, IPB60R950C6
IPP60R950C6, IPA60R950C6
1
Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle and
pioneered by Infineon Technologies. CoolMOS™ C6 series combines the
experience of the leading SJ MOSFET supplier with high class innovation.
The resulting devices provide all benefits of a fast switching SJ MOSFET
while not sacrificing ease of use. Extremely low switching and conduction
losses make switching applications even more efficient, more compact,
lighter, and cooler.
Features
•
•
•
•
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Easy to use/drive
JEDEC1) qualified, Pb-free plating
drain
pin 2
gate
pin 1
Applications
source
pin 3
PFC stages, hard switching PWM stages and resonant switching PWM
stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server,
Telecom, UPS and Solar.
Please note: For MOSFET paralleling the use of ferrite beads on the gate
or separate totem poles is generally recommended.
Table 1
Key Performance Parameters
Parameter
Value
650
0.95
13
Unit
V
DS @ Tj,max
V
RDS(on),max
Qg,typ
nC
A
ID,pulse
12
E
oss @ 400V
1.3
µJ
A/µs
Body diode di/dt
500
Type / Ordering Code
IPD60R950C6
Package
Marking
Related Links
PG-TO252
PG-TO263
PG-TO220
IFX C6 Product Brief
IFX C6 Portfolio
IPB60R950C6
IPP60R950C6
6R950C6
IFX CoolMOS Webpage
IFX Design tools
IPA60R950C6
PG-TO220 FullPAK
1) J-STD20 and JESD22
FinalData Sheet
2
Rev. 2.1, 2010-03-11
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Table of Contents
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
FinalData Sheet
3
Rev. 2.1, 2010-03-11
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Maximum Ratings
2
Maximum Ratings
at Tj = 25 °C, unless otherwise specified.
Table 2
Maximum ratings
Parameter
Symbol
Values
Min. Typ. Max.
Unit Note / Test Condition
Continuous drain current1)
ID
-
-
4.4
2.8
12
A
TC= 25 °C
TC= 100°C
TC=25 °C
Pulsed drain current2)
ID,pulse
EAS
-
-
-
-
A
Avalanche energy, single pulse
46
mJ
ID=0.8 A,VDD=50 V
(see table 21)
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
EAR
IAR
-
-
-
-
-
0.13
0.8
50
ID=0.8 A,VDD=50 V
-
A
dv/dt
VGS
-
V/ns VDS=0...480 V
-20
-30
-
20
V
static
30
AC (f>1 Hz)
TC=25 °C
Power dissipation for
TO-220, TO-252, TO-263
Ptot
Ptot
-
-
37
W
W
°C
Power dissipation for
TO-220 FullPAK
-
26
TC=25 °C
Operating and storage temperature Tj,Tstg
-55
-
-
-
150
60
Mounting torque
Ncm M3 and M3.5 screws
TO-220
TO-220FP
50
3.9
12
15
M2.5 screws
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt3)
IS
-
-
-
-
-
-
A
A
TC=25 °C
TC=25 °C
IS,pulse
dv/dt
V/ns VDS=0...480 V, ISD ID,
Tj=125 °C
Maximum diode commutation
speed3)
dif/dt
500
A/µs (see table 22)
1) Limited by Tj,max. Maximum duty cycle D=0.75
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
FinalData Sheet
4
Rev. 2.1, 2010-03-11
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Thermal characteristics
3
Thermal characteristics
Table 3
Thermal characteristics TO-220 (IPP60R950C6)
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
3.41
62
Thermal resistance, junction - case RthJC
-
-
-
-
°C/W
Thermal resistance, junction -
ambient
RthJA
leaded
Soldering temperature,
wavesoldering only allowed at
leads
Tsold
-
-
260
°C
1.6 mm (0.063 in.)
from case for 10 s
Table 4
Thermal characteristics TO-220FullPAK (IPA60R950C6)
Symbol Values
Typ.
Parameter
Unit
Note /
Test Condition
Min.
Max.
4.9
Thermal resistance, junction - case RthJC
-
-
-
-
°C/W
Thermal resistance, junction -
ambient
RthJA
80
leaded
Soldering temperature,
wavesoldering only allowed at
leads
Tsold
-
-
260
°C
1.6 mm (0.063 in.)
from case for 10 s
Table 5
Thermal characteristics TO-263 (IPB60R950C6),TO-252 (IPD60R950C6)
Parameter
Symbol
Values
Typ.
Unit
Note /
Test Condition
Min.
Max.
3.41
62
Thermal resistance, junction - case RthJC
-
-
-
-
°C/W
Thermal resistance, junction -
ambient
RthJA
SMD version, device
on PCB, minimal
footprint
35
SMD version, device
on PCB, 6cm2 cooling
area1)
Soldering temperature,
Tsold
-
-
260
°C
reflow MSL1
wave- & reflowsoldering allowed
1) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB is
vertical without air stream cooling
FinalData Sheet
5
Rev. 2.1, 2010-03-11
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Table 6
Static characteristics
Symbol
Parameter
Values
Unit
V
Note / Test Condition
Min.
600
2.5
-
Typ.
Max.
Drain-source breakdown voltage V(BR)DSS
-
-
VGS=0 V, ID=0.25 mA
VDS=VGS, ID=0.13 mA
Gate threshold voltage
VGS(th)
IDSS
3
-
3.5
1
Zero gate voltage drain current
µA
VDS=600 V, VGS=0 V,
Tj=25 °C
-
10
-
VDS=600 V, VGS=0 V,
Tj=150 °C
Gate-source leakage current
IGSS
-
-
-
100
nA
VGS=20 V, VDS=0 V
Drain-source on-state resistance RDS(on)
0.86
0.95
VGS=10 V, ID=1.5 A,
Tj=25 °C
-
-
2.22
16
-
-
VGS=10 V, ID=1.5 A,
Tj=150 °C
Gate resistance
RG
f=1 MHz, open drain
Table 7
Dynamic characteristics
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
280
21
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
-
-
pF
VGS=0 V, VDS=100 V,
f=1 MHz
Coss
Co(er)
Effective output capacitance,
energy related1)
14
VGS=0 V,
VDS=0...480 V
Effective output capacitance, time Co(tr)
-
57
-
ID=constant, VGS=0 V
VDS=0...480V
related2)
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
10
8
-
-
-
-
ns
VDD=400 V,
VGS=10 V, ID=1.9A,
RG= 12.2
Turn-off delay time
Fall time
60
13
(see table 20)
1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
FinalData Sheet
6
Rev. 2.1, 2010-03-11
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Electrical characteristics
Table 8
Gate charge characteristics
Symbol
Parameter
Values
Typ.
Unit
Note /
Test Condition
Min.
Max.
IGate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
1.5
6.5
13
-
-
-
-
nC
VDD=480 V, ID=1.9 A,
VGS=0 to 10 V
Qgd
Qg
Gate plateau voltage
Vplateau
5.4
V
Table 9
Reverse diode characteristics
Symbol
Parameter
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Diode forward voltage
VSD
-
0.9
-
V
VGS=0 V, IF=1.9 A,
Tj=25 °C
Reverse recovery time
trr
-
-
-
220
1.5
12
-
-
-
ns
µC
A
VR=400 V, IF=1.9 A,
diF/dt=100 A/µs
(see table 22)
Reverse recovery charge
Peak reverse recovery current
Qrr
Irrm
FinalData Sheet
7
Rev. 2.1, 2010-03-11
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Electrical characteristics diagrams
5
Electrical characteristics diagrams
Table 10
Power dissipation
Power dissipation
TO-220, TO-252, TO-263
TO-220 FullPAK
Ptot = f(TC)
Ptot = f(TC)
Table 11
Max. transient thermal impedance
TO-220, TO-252, TO-263
Max. transient thermal impedance
TO-220 FullPAK
Z
(thJC)=f(tp); parameter: D=tp/T
Z(thJC)=f(tp); parameter: D=tp/T
FinalData Sheet
8
Rev. 2.1, 2010-03-11
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Electrical characteristics diagrams
Table 12
Safe operating area TC=25 °C
Safe operating area TC=25 °C
TO-220, TO-252, TO-263
TO-220 FullPAK
ID=f(VDS); TC=25 °C; D=0; parameter tp
ID=f(VDS); TC=25 °C; D=0; parameter tp
Table 13
Safe operating area TC=80 °C
Safe operating area TC=80 °C
TO-220, TO-252, TO-263
TO-220 FullPAK
ID=f(VDS); TC=80 °C; D=0; parameter tp
ID=f(VDS); TC=80 °C; D=0; parameter tp
FinalData Sheet
9
Rev. 2.1, 2010-03-11
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Electrical characteristics diagrams
Table 14
Typ. output characteristics Tj=25 °C
Typ. output characteristics Tj=125 °C
ID=f(VDS); Tj=25 °C; parameter: VGS
ID=f(VDS); Tj=125 °C; parameter: VGS
Table 15
Typ. drain-source on-state resistance
Drain-source on-state resistance
R
DS(on)=f(ID); Tj=125 °C; parameter: VGS
RDS(on)=f(Tj); ID=1.5A; VGS=10 V
FinalData Sheet
10
Rev. 2.1, 2010-03-11
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Electrical characteristics diagrams
Table 16
Typ. transfer characteristics
Typ. gate charge
ID=f(VGS); VDS=20V
V
GS=f(Qgate), ID=1.9A pulsed
Table 17
Avalanche energy
Drain-source breakdown voltage
EAS=f(Tj); ID=0.8A; VDD=50 V
VBR(DSS)=f(Tj); ID=0.25 mA
FinalData Sheet
11
Rev. 2.1, 2010-03-11
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Electrical characteristics diagrams
Table 18
Typ. capacitances
Typ. Coss stored energy
C=f(VDS); VGS=0 V; f=1 MHz
EOSS=f(VDS)
Table 19
Forward characteristics of reverse diode
IF=f(VSD); parameter: Tj
FinalData Sheet
12
Rev. 2.1, 2010-03-11
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Test circuits
6
Test circuits
Table 20
Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load
Switching time waveform
VDS
90%
VDS
VGS
10%
VGS
td( off)
td(on)
ton
tf
tr
toff
Table 21
Unclamped inductive load test circuit and waveform
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
VD
ID
VDS
VDS
VDS
ID
Table 22
Test circuit and waveform for diode characteristics
Test circuit for diode characteristics
Diode recovery waveform
ID
i
diF /dt
v
trr
Qrr
=
=
tS
QS
trr
+
tF
+
RG1
QF
tF
ΙF
tS
VDS
10% ΙRRM
dirr /dt
t
RG2
QS
QF
ΙRRM
V
RRM
90% ΙRRM
RG1 = RG2
v
SIL00088
FinalData Sheet
13
Rev. 2.1, 2010-03-11
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Package outlines
7
Package outlines
Figure 1
Outlines TO-252, dimensions in mm/inches
FinalData Sheet
14
Rev. 2.1, 2010-03-11
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Package outlines
Figure 2
Outlines TO-220, dimensions in mm/inches
FinalData Sheet
15
Rev. 2.1, 2010-03-11
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Package outlines
Figure 3
Outlines TO-220 FullPAK, dimensions in mm/inches
FinalData Sheet
16
Rev. 2.1, 2010-03-11
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Package outlines
Figure 4
Outlines TO-263, dimensions in mm/inches
FinalData Sheet
17
Rev. 2.1, 2010-03-11
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Revision History
8
Revision History
CoolMOS C6 600V CoolMOS™ C6 Power Transistor
Revision History: 2010-03-11, Rev. 2.1
Previous Revision:
Revision Subjects (major changes since last revision)
2.0
2.1
Release of final data sheet
Change typing error table 1 .Body diode= di/dt
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Edition 2010-03-11
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
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of any third party.
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For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
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question, please contact the nearest Infineon Technologies Office.
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devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
FinalData Sheet
18
Rev. 2.1, 2010-03-11
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