IPP70N12S3L12AKSA1 [INFINEON]

Power Field-Effect Transistor, 70A I(D), 120V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220-3-1, 3 PIN;


型号：	IPP70N12S3L12AKSA1
厂家：	Infineon
描述：	Power Field-Effect Transistor, 70A I(D), 120V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220-3-1, 3 PIN 局域网脉冲晶体管
文件：	总9页 (文件大小：353K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IPB70N12S3L-12

IPI70N12S3L-12, IPP70N12S3L-12

OptiMOS^®-T Power-Transistor

Product Summary

V_DS

120

11.8

R_DS(on),max(SMD version)

I_D

Features

• OptiMOS^TM- power MOSFET for automotive appilcations

• N-channel - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

Type

Package

Marking

IPB70N12S3L-12

IPI70N12S3L-12

IPP70N12S3L-12

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

3N12L12

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

I _D

T _C=25 °C, V_GS=10 V

Continuous drain current

T _C=100 °C,

V_GS=10 V¹⁾

Pulsed drain current¹⁾

I _D,pulse

E_AS

T _C=25 °C

280

410

Avalanche energy, single pulse¹⁾

Avalanche current, single pulse

Gate source voltage

I _D=35A

I _AS

V_GS

±20

125

P_tot

T _C=25 °C

Power dissipation

T _j, T _stg

Operating and storage temperature

-55 ... +175

°C

Rev. 1.0

page 1

2016-06-20

IPB70N12S3L-12

IPI70N12S3L-12, IPP70N12S3L-12

Values

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Thermal characteristics¹⁾

R _thJC

R _thJA

Thermal resistance, junction - case

1.2

K/W

Thermal resistance, junction -

ambient, leaded

SMD version, device on PCB

minimal footprint

6 cm²cooling area²⁾

Electrical characteristics, at T _j=25 °C, unless otherwise specified

Static characteristics

V_(BR)DSSV_GS=0 V, I _D= 1 mA

V_GS(th)V_DS=V_GS, I _D=83µA

Drain-source breakdown voltage

Gate threshold voltage

120

1.2

1.7

2.4

V_DS=120V, V_GS=0V,

T _j=25°C

I _DSS

Zero gate voltage drain current

0.01

0.1

µA

V_DS=120V, V_GS=0V,

T _j=125°C²⁾

I _GSS

V_GS=20V, V_DS=0V

Gate-source leakage current

100 nA

R _DS(on)V_GS=4.5V, I _D=70A

Drain-source on-state resistance

12.2

15.8

15.5

12.1

11.8

V_GS=4.5V, I _D=70A,

SMD version

11.9

10.1

9.8

V_GS=10 V, I _D=70 A

V_GS=10 V, I _D=70 A,

SMD version

Rev. 1.0

page 2

2016-06-20

IPB70N12S3L-12

IPI70N12S3L-12, IPP70N12S3L-12

Values

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Dynamic characteristics¹⁾

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C _iss

C _oss

C_rss

t _d(on)

t _r

4270

950

5550 pF

1230

V_GS=0V, V_DS=25V,

f =1MHz

135

V_DD=20 V, V_GS=10 V,

I _D=50 A, R _G=3.5 W

t _d(off)

t _f

Turn-off delay time

Fall time

Gate Charge Characteristics¹⁾

Gate to source charge

Gate to drain charge

Gate charge total

Q _gs

3.5

Q _gd

V_DD=96 V, I _D=70 A,

V_GS=0 to 10 V

Q _g

V_plateau

Gate plateau voltage

Reverse Diode

Diode continous forward current¹⁾

Diode pulse current¹⁾

I _S

T _C=25°C

I _S,pulse

280

V_GS=0 V, I _F=70 A,

T _j=25 °C

V_SD

Diode forward voltage

0.6

1.2

V_R=60V, I _F=50A,

di_F/dt =100A/µs

Reverse recovery time¹⁾

Reverse recovery charge¹⁾

t _rr

Q _rr

185

¹⁾Defined by design. Not subject to production test.

²⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 1.0

page 3

2016-06-20

IPB70N12S3L-12

IPI70N12S3L-12, IPP70N12S3L-12

1 Power dissipation

2 Drain current

P_tot= f(T _C); V_GS= 10 V

I _D= f(T _C); V_GS= 10 V; SMD

140

120

100

150

200

100

150

200

T_C[°C]

3 Safe operating area

4 Max. transient thermal impedance

Z _thJC= f(t _p)

I _D= f(V _DS); T _C= 25 °C; D = 0; SMD

parameter: t _p

parameter: D =t _p/T

10¹

1000

1 µs

10⁰

0.5

10 µs

100

100 µs

0.1

10^-1

0.05

1 ms

0.01

10^-2

single pulse

10^-3

10^-6

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

0.1

V_DS[V]

100

1000

t_p[s]

Rev. 1.0

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2016-06-20

IPB70N12S3L-12

IPI70N12S3L-12, IPP70N12S3L-12

5 Typ. output characteristics

I _D= f(V _DS); T _j= 25 °C; SMD

parameter: V_GS

6 Typ. drain-source on-state resistance

R _DS(on)= f(I _D); T _j= 25 °C; SMD

parameter: V_GS

280

260

240

220

200

180

160

140

120

100

10 V

5 V

3 V

3.5 V

4 V

4.5 V

4 V

4.5 V

3.5 V

3 V

5 V

10 V

100 120 140

V_DS[V]

I_D[A]

7 Typ. transfer characteristics

I _D= f(V _GS); V_DS= 6V

parameter: T _j

8 Typ. drain-source on-state resistance

R _DS(on)= f(T _j); I _D= 50 A; V_GS= 10 V; SMD

150

100

-55 °C

25 °C

175 °C

-60

-20

100

140

180

V_GS[V]

T_j[°C]

Rev. 1.0

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2016-06-20

IPB70N12S3L-12

IPI70N12S3L-12, IPP70N12S3L-12

9 Typ. gate threshold voltage

V_GS(th)= f(T _j); V_GS= V_DS

parameter: I _D

10 Typ. capacitances

C = f(V_DS); V_GS= 0 V; f = 1 MHz

10⁴

2.5

Ciss

400 µA

Coss

10³

10²

10¹

80 µA

1.5

0.5

Crss

-60

-20

100

140

180

V_DS[V]

T_j[°C]

11 Typical forward diode characteristics

12 Typ. avalanche characteristics

I _{A S}= f(t _AV

IF = f(V_SD)

)

parameter: T _j

parameter: T_j(start)

10³

100

25 °C

10²

100 °C

150 °C

175 °C

25 °C

10¹

10⁰

0.2

0.4

0.6

0.8

1.2

1.4

0.1

t_AV[µs]

100

1000

V_SD[V]

Rev. 1.0

page 6

2016-06-20

IPB70N12S3L-12

IPI70N12S3L-12, IPP70N12S3L-12

13 Typical avalanche energy

E_AS= f(T _j)

14 Typ. drain-source breakdown voltage

V_BR(DSS)= f(T _j); I _D= 1 mA

parameter: I _D

135

900

800

130

125

120

115

110

700

17.5 A

600

500

400

35 A

300

200

70 A

100

-55

-15

105

145

125

175

T_j[°C]

15 Typ. gate charge

16 Gate charge waveforms

V_GS= f(Q _gate); I _D= 70 A pulsed

parameter: V_DD

V _GS

Q_g

24 V

96 V

V _gs(th)

Q_g(th)

Q_sw

Q_gd

Q_gate

Q_gs

Q_gate[nC]

Rev. 1.0

page 7

2016-06-20

IPB70N12S3L-12

IPI70N12S3L-12, IPP70N12S3L-12

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions

or characteristics. With respect to any examples or hints given herein,

any typical values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including

without limitation warranties of non‑infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please

contact your nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances. For information

on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the

express written approval of Infineon Technologies, if a failure of such components can reasonably

be expected to cause the failure of that life-support device or system, or to affect the safety or

effectiveness of that device or system. Life support devices or systems are intended to be

implanted in the human body, or to support and/or maintain and sustain and/or protect human life.

If they fail, it is reasonable to assume that the health of the user or other persons may be

endangered.

Rev. 1.0

page 8

2016-06-20

IPB70N12S3L-12

IPI70N12S3L-12, IPP70N12S3L-12

Revision History

Version

Date

Changes

Revision 1.0

20.06.2016 Final Data Sheet

Rev. 1.0

page 9

2016-06-20

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