IPP77N06S3-09 [INFINEON]
OptiMOS㈢-T Power-Transistor; OptiMOS㈢ -T电源晶体管
| 型号： | IPP77N06S3-09 |
| 厂家： | 
Infineon |
| 描述： | OptiMOS㈢-T Power-Transistor |
| 文件： | 总8页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB77N06S3-09
IPI77N06S3-09, IPP77N06S3-09
OptiMOS®-T Power-Transistor
Product Summary
V DS
Features
55
8.8
77
V
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
R
DS(on),max (SMD version)
mΩ
A
I D
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
• Ultra low Rds(on)
• Avalanche tested
• ESD Class 2 (HBM)
EIA/JESD22-A114-B
Type
Package
Ordering Code Marking
IPB77N06S3-09
IPI77N06S3-09
IPP77N06S3-09
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
SP0000-88715
SP0000-88716
SP0000-88717
3N0609
3N0609
3N0609
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
Continuous drain current1)
I D
T C=25 °C, V GS=10 V
T C=100 °C,
77
A
55
V
GS=10 V2)
Pulsed drain current2)
I D,pulse
E AS
T C=25 °C
I D=38 A
308
170
Avalanche energy, single pulse3)
mJ
Drain gate voltage2)
Gate source voltage4)
V DG
55
±20
V GS
V
P tot
T C=25 °C
Power dissipation
107
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... +175
55/175/56
Rev. 0.9
page 1
2005-09-16
IPB77N06S3-09
IPI77N06S3-09, IPP77N06S3-09
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics2)
R thJC
R thJA
Thermal resistance, junction - case
-
-
-
-
1.4
62
K/W
Thermal resistance, junction -
ambient, leaded
R thJA
SMD version, device on PCB
minimal footprint
-
-
-
-
62
40
6 cm2 cooling area5)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=250 µA
DS=V GS, I D=55 µA
Drain-source breakdown voltage
Gate threshold voltage
55
-
-
V
2.1
3
4
V
DS=25 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
0.1
1
1
µA
T j=25 °C
V
DS=25 V, V GS=0 V,
100
T j=125 °C1)
I GSS
V
V
GS=20 V, V DS=0 V
GS=10 V, I D=39 A
Gate-source leakage current
-
-
1
100 nA
R DS(on)
Drain-source on-state resistance
7.7
9.1
mΩ
V
GS=10 V, I D=39 A,
-
7.4
8.8
SMD version
Rev. 0.9
page 2
2005-09-16
IPB77N06S3-09
IPI77N06S3-09, IPP77N06S3-09
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
5335
812
775
29
-
-
-
-
-
-
-
pF
ns
V
GS=0 V, V DS=25 V,
C oss
Crss
t d(on)
t r
f =1 MHz
V
V
DD=27.5 V,
GS=10 V, I D=77 A,
51
t d(off)
t f
Turn-off delay time
Fall time
29
R G=10 Ω
51
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
41
17
77
7.1
-
nC
Q gd
-
103
-
V
V
DD=11 V, I D=77 A,
GS=0 to 10 V
Q g
V plateau
Gate plateau voltage
V
A
Reverse Diode
I S
Diode continous forward current
Diode pulse current2)
-
-
-
-
77
T C=25 °C
I S,pulse
308
V
GS=0 V, I F=77 A,
Diode forward voltage2)
Reverse recovery time2)
Reverse recovery charge2)
V SD
-
-
-
1
1.3
V
T j=25 °C
V R=27.5 V, I F=I S,
di F/dt =100 A/µs
t rr
43
58
-
-
ns
nC
Q rr
1) Current is limited by bondwire; with an R thJC = 1.4 K/W the chip is able to carry 77A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2) Defined by design. Not subject to production test.
3) See diagrams 12 and 13.
4) Qualified at -5V and +20V.
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 0.9
page 3
2005-09-16
IPB77N06S3-09
IPI77N06S3-09, IPP77N06S3-09
1 Power dissipation
2 Drain current
P tot=f(T C); V GS≥6 V
I D=f(T C); V GS≥10 V
120
100
80
60
40
20
0
100
80
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJC=f(t p)
Z
parameter: D =t p/T
101
1000
1 µs
10 µs
limited by on-state
resistance
0.5
100
100
10
1
0.2
0.1
100 µs
1 ms
10-1
0.05
0.02
0.01
10-2
single pulse
10-3
10-7
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
V
DS [V]
t
p [s]
Rev. 0.9
page 4
2005-09-16
IPB77N06S3-09
IPI77N06S3-09, IPP77N06S3-09
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: V GS, pulsed
parameter: V GS
25
160
7V
10 V
140
120
100
80
20
15
10
8 V
7 V
8V
60
6.5 V
9V
40
6 V
5.5 V
10V
20
5
0
0
20
40
60
80
100
0
1
2
3
V
DS [V]
I
D [A]
7 Typ. transfer characteristics
I D=f(V GS); V DS=10 V
parameter: T j
8 Drain-source on-state resistance
R
DS(on)=f(T j); I D=77 A; V GS=10 V
20
18
16
14
12
10
8
200
150
100
50
-55 °C
25 °C
6
175 °C
4
2
0
0
2
3
4
5
6
7
8
-60
-20
20
60
100
140
180
T j [°C]
V
GS [V]
Rev. 0.9
page 5
2005-09-16
IPB77N06S3-09
IPI77N06S3-09, IPP77N06S3-09
9 Typ. gate threshold voltage
GS(th)=f(T j); V GS=V DS
10 Typ. capacitances
V
C =f(V DS); V GS=0 V; f =1 MHz
parameter: I D
104
4
Ciss
3.5
3
600µA
Coss
60µA
2.5
2
Crss
103
1.5
1
0.5
102
0
0
5
10
15
20
25
30
-60
-20
20
60
T j [°C]
100
140
180
V
DS [V]
11 Forward characteristics of reverse diode
I F=f(V SD), pulsed
12 Typ. avalanche characteristics
AS=f(t AV
I
)
parameter: T j
parameter: T j(start)
100
1000
25°C
100
100°C
150°C
175 °C
25 °C
10
10
1
1
1
10
100
1000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
SD [V]
V
t
AV [µs]
Rev. 0.9
page 6
2005-09-16
IPB77N06S3-09
IPI77N06S3-09, IPP77N06S3-09
13 Typ. avalanche energy
AS=f(T j )
15 Drain-source breakdown voltage
BR(DSS)=f(T j); I D=1 mA
E
V
parameter: I D
66
64
62
60
58
56
54
52
50
48
46
350
20 A
300
250
30 A
200
38 A
150
100
50
0
0
-60
-20
20
60
100
140
180
50
100
150
200
T j [°C]
T j [°C]
14 Typ. gate charge
GS=f(Q gate); I D=77 A pulsed
16 Gate charge waveforms
V
parameter: V DD
12
VGS
44 V
11 V
10
8
Qg
6
4
2
Qgate
Qgd
Qgs
0
0
20
40
60
80
100
120
Q
gate [nC]
Rev. 0.9
page 7
2005-09-16
IPB77N06S3-09
IPI77N06S3-09, IPP77N06S3-09
Published by
Infineon Technologies AG
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies Office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 0.9
page 8
2005-09-16
相关型号：
IPP77N06S309AKSA1
Power Field-Effect Transistor, 77A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
IPP80CN10NGHKSA1
Power Field-Effect Transistor, 13A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
IPP80CN10NGXKSA1
Power Field-Effect Transistor, 13A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
IPP80N03S4L03AKSA1
Power Field-Effect Transistor, 80A I(D), 30V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
IPP80N03S4L04AKSA1
Power Field-Effect Transistor, 80A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明