IPT015N10N5 [INFINEON]
Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high current applications up to 300 A, such as forklifts, light electric vehicles (LEV), power tools, point-of-loads (POL), telecom and e-fuses. Furthermore, the 60 percent smaller package size enables a very compact design. Compared to D²PAK 7-pin, TO-Leadless shows a substantial reduction in footprint of 30 percent. The 50 percent reduced height offers a significant advantage in narrow applications such as rack or blade servers.;
| 型号： | IPT015N10N5 |
| 厂家： | 
Infineon |
| 描述： | Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high current applications up to 300 A, such as forklifts, light electric vehicles (LEV), power tools, point-of-loads (POL), telecom and e-fuses. Furthermore, the 60 percent smaller package size enables a very compact design. Compared to D²PAK 7-pin, TO-Leadless shows a substantial reduction in footprint of 30 percent. The 50 percent reduced height offers a significant advantage in narrow applications such as rack or blade servers. |
| 文件： | 总11页 (文件大小：948K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPT015N10N5
MOSFET
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
TOLL
Features
Tab
•ꢀIdealꢀforꢀhighꢀfrequencyꢀswitchingꢀandꢀsync.ꢀrec.
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀon-resistanceꢀꢀRDS(on)
1
•ꢀN-channel,ꢀnormalꢀlevel
2
3
4
5
•ꢀ100%ꢀavalancheꢀtested
6
7
8
•ꢀPb-freeꢀplating;ꢀRoHSꢀcompliant
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplications
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
Drain
Tab
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
100
1.5
Unit
VDS
V
Gate
Pin 1
RDS(on),max
ID
mΩ
A
Source
Pin 2-8
353
213
169
Qoss
nC
nC
QG(0V..10V)
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
015N10N5
RelatedꢀLinks
IPT015N10N5
PG-HSOF-8
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.4,ꢀꢀ2023-05-04
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPT015N10N5
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.4,ꢀꢀ2023-05-04
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPT015N10N5
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
353
250
35
VGS=10ꢀV,ꢀTC=25ꢀ°C
Continuous drain current1)
ID
A
VGS=10ꢀV,ꢀTC=100ꢀ°C
VGS=10ꢀV,ꢀTA=25ꢀ°C,ꢀRthJAꢀ=40ꢀK/W2)
Pulsed drain current3)
Avalanche energy, single pulse4)
ID,pulse
EAS
-
-
-
-
-
-
1412
775
20
A
TC=25ꢀ°C
-
mJ
V
ID=150ꢀA,ꢀRGS=25ꢀΩ
Gate source voltage
VGS
-20
-
-
Power dissipation
Ptot
375
175
W
°C
TC=25ꢀ°C
Operating and storage temperature
Tj,ꢀTstg
-55
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
0.2
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
0.4
K/W
K/W
-
-
Device on PCB,
minimal footprint
-
-
-
-
62
40
Device on PCB,
RthJA
K/W
-
6 cm² cooling area2)
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.4,ꢀꢀ2023-05-04
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPT015N10N5
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
100
2.2
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
3.0
3.8
VDS=VGS,ꢀID=280ꢀµA
-
-
0.1
10
5
100
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
1.3
1.6
1.5
2.0
VGS=10ꢀV,ꢀID=150ꢀA
VGS=6ꢀV,ꢀID=75ꢀA
RDS(on)
mΩ
Gate resistance1)
Transconductance
RG
gfs
-
1.4
2.1
-
Ω
-
140
280
S
|VDS|>2|ID|RDS(on)max,ꢀID=100ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
12000 16000 pF
1800 2300 pF
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
80
36
140
-
pF
ns
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,
RG,ext=1.8ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,
RG,ext=1.8ꢀΩ
30
85
30
-
-
-
ns
ns
ns
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,
RG,ext=1.8ꢀΩ
Turn-off delay time
Fall time
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,
RG,ext=1.8ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
53
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge1)
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=50ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV
Qg(th)
Qgd
36
-
34
51
Qsw
51
-
Gate charge total1)
Qg
169
4.4
211
Gate plateau voltage
Gate charge total, sync. FET
Output charge1)
Vplateau
Qg(sync)
Qoss
-
146
213
-
nC
nC
284
VDD=50ꢀV,ꢀVGS=0ꢀV
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.4,ꢀꢀ2023-05-04
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPT015N10N5
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
242
1412
1.2
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
0.85
103
316
V
VGS=0ꢀV,ꢀIF=100ꢀA,ꢀTj=25ꢀ°C
VR=50ꢀV,ꢀIF=100A,ꢀdiF/dt=100ꢀA/µs
VR=50ꢀV,ꢀIF=100A,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
206
632
ns
nC
Qrr
1) Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.4,ꢀꢀ2023-05-04
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPT015N10N5
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
400
400
350
300
250
200
150
100
50
350
300
250
200
150
100
50
0
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
104
100
1 µs
103
102
101
100
10-1
0.5
10 µs
10-1
0.2
100 µs
0.1
0.05
0.02
1 ms
10 ms
DC
10-2
0.01
single pulse
10-3
10-1
100
101
102
103
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.4,ꢀꢀ2023-05-04
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPT015N10N5
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
800
3.0
6 V
7 V
10 V
700
600
500
400
300
200
100
0
5 V
2.5
2.0
1.5
1.0
0.5
0.0
5.5 V
5.5 V
6 V
7 V
10 V
5 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
100
200
300
400
500
600
700
800
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
700
360
320
280
240
200
160
120
80
600
500
400
300
200
100
175 °C
40
25 °C
0
0
0
1
2
3
4
5
6
7
0
40
80
120
160
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.4,ꢀꢀ2023-05-04
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPT015N10N5
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
3.5
4
3.0
2.5
2800 µA
3
2
1
0
280 µA
max
2.0
1.5
1.0
0.5
0.0
typ
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=150ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
105
104
25 °C
25 °C, max
175 °C
175 °C, max
104
103
102
101
100
Ciss
Coss
103
102
Crss
101
0
20
40
60
80
100
0.0
0.5
1.0
1.5
2.0
2.5
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.4,ꢀꢀ2023-05-04
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPT015N10N5
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
103
10
9
8
7
6
5
4
3
2
1
0
50 V
25 °C
102
20 V
80 V
100 °C
150 °C
101
100
100
101
102
103
0
50
100
150
200
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=100ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
110
108
106
104
102
100
98
96
94
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.4,ꢀꢀ2023-05-04
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPT015N10N5
5ꢀꢀꢀꢀꢀPackageꢀOutlines
1) partially covered with Mold Flash
MILLIMETERS
INCHES
DIM
MIN
2.20
0.70
9.70
0.42
0.40
10.28
MAX
2.40
0.90
9.90
0.50
0.60
10.58
MIN
MAX
0.094
0.035
0.390
0.020
0.024
0.416
DOCUMENT NO.
Z8B00169619
A
b
0.087
0.028
0.382
0.017
0.016
0.405
b1
b2
c
0
SCALE
D
2
D2
E
3.30
0.130
9.70
10.10
0.382
0.398
0
2
E1
E4
E5
e
7.50
8.50
0.295
0.335
4mm
9.46
1.20 (BSC)
0.372
0.047 (BSC)
EUROPEAN PROJECTION
H
11.48
6.55
11.88
6.75
0.452
0.258
0.468
0.266
H1
H2
H3
H4
N
7.15
3.59
3.26
8
0.281
0.141
0.128
8
ISSUE DATE
20-02-2014
K1
L
4.18
0.165
1.60
1.00
2.10
1.30
0.063
0.039
0.083
0.051
L1
L2
L4
0.70
0.60
0.028
0.024
REVISION
02
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-HSOF-8,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.4,ꢀꢀ2023-05-04
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
IPT015N10N5
RevisionꢀHistory
IPT015N10N5
Revision:ꢀ2023-05-04,ꢀRev.ꢀ2.4
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2.2
2.3
2.4
2014-12-17
Release of final version
2015-02-23
2016-10-13
2017-05-31
2023-05-04
Correction of SOA area with Ipulse = 1200A
Update Avalanche Energy
Update "Tc" condition in "Continous drain current"
Update current rating
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Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.4,ꢀꢀ2023-05-04
相关型号：
IPT015N10NF2S
Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 1.5 mOhm, addressing a broad range of applications from low- to high-switching frequency.
INFINEON
IPT017N10NF2S
Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 1.7 mOhm, addressing a broad range of applications from low- to high-switching frequency.
INFINEON
IPT017N12NM6
This is a normal level 120 V MOSFET in TO-Leadless packaging with 1.7 mOhm on-resistance. IPT017N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.
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IPT019N08N5
Infineon’s OptiMOS™ 5 80V n-channel power MOSFET IPT019N08N5 in TO-Leadless package is ideally suited for high switching frequencies. This package is especially designed for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. With a 60% space reduction compared to D2PAK 7pin package, TO-Leadless (TOLL) is the perfect solution where highest efficiency, outstanding EMI behavior as well as best thermal behavior and space reduction are required.
INFINEON
IPT01A
MIL Series Connector, Aluminum Alloy, Female; Male, Crimp; Solder Terminal, Receptacle
GLENAIR
IPT01A18-11PCF2
MIL Series Connector, 11 Contact(s), Aluminum Alloy, Male, Crimp Terminal, Receptacle, ROHS COMPLIANT
GLENAIR
IPT01A18-11PCPH13.5F6
MIL Series Connector, 11 Contact(s), Aluminum Alloy, Male, Crimp Terminal, Receptacle, ROHS COMPLIANT
GLENAIR
IPT01A18-11PCPH13.5F8
MIL Series Connector, 11 Contact(s), Aluminum Alloy, Male, Crimp Terminal, Receptacle
GLENAIR
IPT01A18-11PCPH16F8
MIL Series Connector, 11 Contact(s), Aluminum Alloy, Male, Crimp Terminal, Receptacle
GLENAIR
IPT01A18-11PCPHM11F2
MIL Series Connector, 11 Contact(s), Aluminum Alloy, Male, Crimp Terminal, Receptacle, ROHS COMPLIANT
GLENAIR
IPT01A18-11PCPHM11F7
MIL Series Connector, 11 Contact(s), Aluminum Alloy, Male, Crimp Terminal, Receptacle, ROHS COMPLIANT
GLENAIR
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