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IPT210N25NFD [INFINEON]

英飞凌的 To-无导线封装针对大电流应用进行优化，例如，叉车、轻型电动车 (LEV)、POL（负载点）和电信。这种封装是高功率应用的理想解决方案，这种场合需要高效率、出色的电磁干扰性能以及出色的热性能和节省的空间。;
IPT210N25NFD
型号： IPT210N25NFD
厂家： Infineon    Infineon
描述：

英飞凌的 To-无导线封装针对大电流应用进行优化，例如，叉车、轻型电动车 (LEV)、POL（负载点）和电信。这种封装是高功率应用的理想解决方案，这种场合需要高效率、出色的电磁干扰性能以及出色的热性能和节省的空间。

电信
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IPT210N25NFD  
MOSFET  
OptiMOSª3ꢀPower-Transistor,ꢀ250ꢀV  
HSOF  
Features  
Tab  
•ꢀN-channel,ꢀnormalꢀlevel  
•ꢀFastꢀDiodeꢀ(FD)ꢀwithꢀreducedꢀQrr  
•ꢀOptimizedꢀforꢀhardꢀcommutationꢀruggedness  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)  
1
2
3
4
5
•ꢀ175ꢀ°Cꢀoperatingꢀtemperature  
6
7
8
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplication  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
Drain  
Tab  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
Unit  
VDS  
250  
V
Gate  
Pin 1  
RDS(on),max  
ID  
21.0  
69  
mΩ  
A
Source  
Pin 2-8  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPT210N25NFD  
PG-HSOF-8  
210N25NF  
-
1) J-STD20 and JESD22  
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2016-01-11  
OptiMOSª3ꢀPower-Transistor,ꢀ250ꢀV  
IPT210N25NFD  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2016-01-11  
OptiMOSª3ꢀPower-Transistor,ꢀ250ꢀV  
IPT210N25NFD  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
69  
54  
TC=25ꢀ°C  
A
Continuous drain current  
ID  
TC=100ꢀ°C  
Pulsed drain current1)  
Avalanche energy, single pulse  
Gate source voltage  
ID,pulse  
EAS  
-
-
-
-
-
276  
610  
20  
A
TC=25ꢀ°C  
-
mJ  
V
ID=37ꢀA,ꢀRGS=25ꢀΩ  
VGS  
Ptot  
-20  
-
-
Power dissipation  
375  
W
TC=25ꢀ°C  
IEC climatic category;  
DIN IEC 68-1: 55/175/56  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
175  
°C  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
0.2  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case  
RthJC  
RthJA  
-
0.4  
K/W  
K/W  
-
-
Thermal resistance, junction - ambient,  
minimal footprint  
-
-
-
-
62  
40  
Thermal resistance, junction - ambient,  
6 cm2 cooling area2)  
RthJA  
K/W  
-
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
250  
2
Typ.  
Max.  
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
3
4
VDS=VGS,ꢀID=267ꢀµA  
-
-
0.1  
10  
1
100  
VDS=200ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=200ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
IDSS  
µA  
nA  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance3)  
IGSS  
RDS(on)  
RG  
-
1
100  
21.0  
4.2  
-
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
18.0  
2.8  
139  
mΩ VGS=10ꢀV,ꢀID=69ꢀA  
-
Ω
-
Transconductance  
gfs  
70  
S
|VDS|>2|ID|RDS(on)max,ꢀID=69ꢀA  
1) See Diagram 3  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.  
PCB is vertical in still air.  
3) Defined by design. Not subject to production test.  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2016-01-11  
OptiMOSª3ꢀPower-Transistor,ꢀ250ꢀV  
IPT210N25NFD  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics1)ꢀ  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Ciss  
Coss  
Crss  
-
-
-
5300 7000 pF  
VGS=0ꢀV,ꢀVDS=125ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=125ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=125ꢀV,ꢀf=1ꢀMHz  
Output capacitance  
300  
6
400  
9.4  
pF  
pF  
Reverse transfer capacitance  
VDD=125ꢀV,ꢀVGS=10ꢀV,ꢀID=34.5ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
13  
13  
43  
13  
-
-
-
-
ns  
ns  
ns  
ns  
VDD=125ꢀV,ꢀVGS=10ꢀV,ꢀID=34.5ꢀA,  
RG,ext=1.6ꢀΩ  
VDD=125ꢀV,ꢀVGS=10ꢀV,ꢀID=34.5ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
VDD=125ꢀV,ꢀVGS=10ꢀV,ꢀID=34.5ꢀA,  
RG,ext=1.6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ  
Values  
Typ.  
24  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge1)  
Switching charge  
Gate charge total1)  
Gate plateau voltage  
Output charge1)  
Qgs  
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
V
VDD=125ꢀV,ꢀID=69ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=125ꢀV,ꢀID=69ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=125ꢀV,ꢀID=69ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=125ꢀV,ꢀID=69ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=125ꢀV,ꢀID=69ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=125ꢀV,ꢀVGS=0ꢀV  
Qgd  
8
-
Qsw  
Qg  
16  
-
65  
86  
-
Vplateau  
Qoss  
4.5  
144  
-
nC  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
69  
Diode continous forward current  
Diode pulse current  
IS  
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
276  
1.2  
268  
-
A
TC=25ꢀ°C  
Diode forward voltage  
0.9  
134  
406  
V
VGS=0ꢀV,ꢀIF=69ꢀA,ꢀTj=25ꢀ°C  
VR=125ꢀV,ꢀIF=IS,ꢀdiF/dt=100ꢀA/µs  
VR=125ꢀV,ꢀIF=IS,ꢀdiF/dt=100ꢀA/µs  
Reverse recovery time1)  
Reverse recovery charge1)  
ns  
nC  
Qrr  
1) Defined by design. Not subject to production test.  
2) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2016-01-11  
OptiMOSª3ꢀPower-Transistor,ꢀ250ꢀV  
IPT210N25NFD  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
400  
80  
350  
300  
250  
200  
150  
100  
50  
60  
40  
20  
0
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
100  
1 µs  
10 µs  
102  
101  
100  
10-1  
100 µs  
1 ms  
0.5  
10-1  
0.2  
10 ms  
DC  
0.1  
0.05  
0.02  
0.01  
single pulse  
10-2  
10-1  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2016-01-11  
OptiMOSª3ꢀPower-Transistor,ꢀ250ꢀV  
IPT210N25NFD  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
200  
40  
10 V  
8 V  
7 V  
6.5 V  
6 V  
150  
30  
5.5 V  
5 V  
5.5 V  
8 V  
5 V  
4.5 V  
6 V  
100  
20  
10 V  
4.5 V  
50  
10  
0
0
0
1
2
3
4
5
0
50  
100  
150  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance  
200  
200  
180  
160  
140  
120  
100  
80  
150  
100  
175 °C  
60  
25 °C  
50  
40  
20  
0
0
0
2
4
6
8
0
40  
80  
120  
160  
VGSꢀ[V]  
IDꢀ[A]  
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
gfs=f(ID);ꢀTj=25ꢀ°C  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2016-01-11  
OptiMOSª3ꢀPower-Transistor,ꢀ250ꢀV  
IPT210N25NFD  
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
70  
4.0  
3.5  
60  
50  
40  
2670 µA  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
267 µA  
30  
98%  
typ  
20  
10  
0
-60  
-20  
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj);ꢀID=69ꢀA;ꢀVGS=10ꢀV  
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
103  
Ciss  
25 °C  
175 °C  
25°C, 98%  
175°C, 98%  
103  
102  
101  
100  
Coss  
102  
101  
100  
Crss  
0
20  
40  
60  
80  
100  
120  
140  
160  
0.0  
0.5  
1.0  
1.5  
2.0  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2016-01-11  
OptiMOSª3ꢀPower-Transistor,ꢀ250ꢀV  
IPT210N25NFD  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
102  
10  
8
6
200 V  
25 °C  
125 V  
100 °C  
125 °C  
50 V  
101  
4
2
0
100  
100  
101  
102  
103  
0
20  
40  
60  
80  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)  
VGS=f(Qgate);ꢀID=69ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Gate charge waveforms  
290  
280  
270  
260  
250  
240  
230  
220  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2016-01-11  
OptiMOSª3ꢀPower-Transistor,ꢀ250ꢀV  
IPT210N25NFD  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
1) partially covered with Mold Flash  
MILLIMETERS  
INCHES  
DIM  
MIN  
2.20  
0.70  
9.70  
0.42  
0.40  
10.28  
MAX  
2.40  
0.90  
9.90  
0.50  
0.60  
10.58  
MIN  
MAX  
0.094  
0.035  
0.390  
0.020  
0.024  
0.416  
DOCUMENT NO.  
Z8B00169619  
A
b
0.087  
0.028  
0.382  
0.017  
0.016  
0.405  
b1  
b2  
c
0
SCALE  
D
2
D2  
E
3.30  
0.130  
9.70  
10.10  
0.382  
0.398  
0
2
E1  
E4  
E5  
e
7.50  
8.50  
0.295  
0.335  
4mm  
9.46  
1.20 (BSC)  
0.372  
0.047 (BSC)  
EUROPEAN PROJECTION  
H
11.48  
6.55  
11.88  
6.75  
0.452  
0.258  
0.468  
0.266  
H1  
H2  
H3  
H4  
N
7.15  
3.59  
3.26  
8
0.281  
0.141  
0.128  
8
ISSUE DATE  
20-02-2014  
K1  
L
4.18  
0.165  
1.60  
1.00  
2.10  
1.30  
0.063  
0.039  
0.083  
0.051  
L1  
L2  
L4  
0.70  
0.60  
0.028  
0.024  
REVISION  
02  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-HSOF-8  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2016-01-11  
OptiMOSª3ꢀPower-Transistor,ꢀ250ꢀV  
IPT210N25NFD  
RevisionꢀHistory  
IPT210N25NFD  
Revision:ꢀ2016-01-11,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
2.0  
Subjects (major changes since last revision)  
Release of final version  
2016-01-11  
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG  
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,  
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,  
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,  
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,  
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.  
TrademarksꢀupdatedꢀAugustꢀ2015  
OtherꢀTrademarks  
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Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
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Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2015ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWith  
respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication  
ofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout  
limitation,ꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2016-01-11  

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