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IPT60R102G7 [INFINEON]

CoolMOS™ C7 Gold 超结 MOSFET 系列（G7）首次将改进型 600V CoolMOS™ C7 Gold 技术优势、4 引脚开尔文源极能力以及 TO-Leadless(TOLL )封装改进热属性相结合，为高达3kW的功率因数校正（PFC）等大电流硬开关拓扑应用以及诸如高端LLC等谐振电路打造了一个可能的 SMD 解决方案。;
IPT60R102G7
型号： IPT60R102G7
厂家： Infineon    Infineon
描述：

CoolMOS™ C7 Gold 超结 MOSFET 系列（G7）首次将改进型 600V CoolMOS™ C7 Gold 技术优势、4 引脚开尔文源极能力以及 TO-Leadless(TOLL )封装改进热属性相结合，为高达3kW的功率因数校正（PFC）等大电流硬开关拓扑应用以及诸如高端LLC等谐振电路打造了一个可能的 SMD 解决方案。

开关 脉冲 功率因数校正 晶体管
文件： 总14页 (文件大小：1192K)
中文：  中文翻译
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IPT60R102G7  
MOSFET  
HSOF  
600VꢀCoolMOSªꢀG7ꢀSJꢀPowerꢀDevice  
TheꢀC7ꢀGOLDꢀseriesꢀ(G7)ꢀforꢀtheꢀfirstꢀtimeꢀbringsꢀtogetherꢀtheꢀbenefitsꢀof  
theꢀC7ꢀGOLDꢀCoolMOS™ꢀtechnology,ꢀ4ꢀpinꢀKelvinꢀSourceꢀcapabilityꢀand  
theꢀimprovedꢀthermalꢀpropertiesꢀofꢀtheꢀTOLLꢀpackageꢀtoꢀenableꢀaꢀpossible  
ꢀSMDꢀsolutionꢀforꢀhighꢀcurrentꢀtopologiesꢀsuchꢀasꢀPFCꢀupꢀtoꢀ3kW  
Tab  
Tab  
1
2
3
8
4
7
6
5
Features  
6
7
5
4
8
3
2
•ꢀC7ꢀGoldꢀgivesꢀbestꢀinꢀclassꢀFOMꢀRDS(on)*EossꢀandꢀRDS(on)*Qg.  
•ꢀSuitableꢀforꢀhardꢀandꢀsoftꢀswitchingꢀ(PFCꢀandꢀhighꢀperformanceꢀLLC)  
•ꢀC7ꢀGoldꢀtechnologyꢀenablesꢀbestꢀinꢀclassꢀRDS(on)ꢀinꢀsmallestꢀfootprint.  
•ꢀTOLLꢀpackageꢀhasꢀinbuiltꢀ4thꢀpinꢀKelvinꢀSourceꢀconfigurationꢀandꢀlow  
parasiticꢀsourceꢀinductanceꢀ(~1nH).  
1
•ꢀTOLLꢀpackageꢀisꢀMSL1ꢀcompliant,ꢀtotalꢀPb-freeꢀandꢀhasꢀeasyꢀvisual  
inspectionꢀgroovedꢀleads.  
Drain  
Tab  
•ꢀTOLLꢀSMDꢀpackageꢀcombinedꢀwithꢀleadꢀfreeꢀdieꢀattachꢀprocessꢀenables  
improvedꢀthermalꢀperformanceꢀRth.  
*1  
Gate  
Pin 1  
Driver  
Source  
Pin 2  
Source  
Pin 3-8  
Benefits  
*1: Internal body diode  
•ꢀC7ꢀGoldꢀFOMꢀRDS(on)*Qgꢀꢀisꢀ15%ꢀbetterꢀthanꢀpreviousꢀC7ꢀ600Vꢀenabling  
fasterꢀswitchingꢀleadingꢀtoꢀhigherꢀefficiency.  
•ꢀIncreasedꢀeconomiesꢀofꢀscaleꢀbyꢀuseꢀinꢀPFCꢀandꢀPWMꢀtopologiesꢀinꢀthe  
application  
•ꢀC7ꢀGoldꢀcanꢀreachꢀ28mΩꢀinꢀinꢀTOLLꢀ115mm2ꢀfootprint,ꢀwhereasꢀprevious  
BICꢀC7ꢀ600Vꢀwasꢀ40mΩꢀinꢀ150mm2ꢀD2PAKꢀfootprint.  
•ꢀReducingꢀparasiticꢀsourceꢀinductanceꢀbyꢀKelvinꢀSourceꢀimproves  
efficiencyꢀbyꢀfasterꢀswitchingꢀandꢀeaseꢀofꢀuseꢀdueꢀtoꢀlessꢀringing.  
•ꢀTOLLꢀpackageꢀisꢀeasyꢀtoꢀuseꢀandꢀhasꢀtheꢀhighestꢀqualityꢀstandards.  
•ꢀImprovedꢀthermalsꢀenableꢀSMDꢀTOLLꢀpackageꢀtoꢀbeꢀusedꢀinꢀhigher  
currentꢀdesignsꢀthanꢀhasꢀbeenꢀpreviouslyꢀpossible.  
Potentialꢀapplications  
PFCꢀstagesꢀandꢀPWMꢀstagesꢀ(TTF,ꢀLLC)ꢀforꢀhighꢀpower/performance  
SMPSꢀe.g.ꢀComputing,ꢀServer,ꢀTelecom,ꢀUPSꢀandꢀSolar.  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
Qg.typ  
Value  
650  
102  
34  
Unit  
V
mΩ  
nC  
A
ID,pulse  
66  
ID,continuous @ Tj<150°C 32  
A
Eoss@400V  
4
µJ  
Body diode di/dt  
740  
A/µs  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPT60R102G7  
PG-HSOF-8  
60R102G7  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600VꢀCoolMOSªꢀG7ꢀSJꢀPowerꢀDevice  
IPT60R102G7  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Final Data Sheet  
2
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600VꢀCoolMOSªꢀG7ꢀSJꢀPowerꢀDevice  
IPT60R102G7  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
23  
15  
TC=25°C  
A
Continuous drain current1)  
ID  
TC=100°C  
Pulsed drain current2)  
ID,pulse  
EAS  
EAR  
IAS  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
66  
A
TC=25°C  
Avalanche energy, single pulse  
Avalanche energy, repetitive  
Avalanche current, single pulse  
MOSFET dv/dt ruggedness  
Gate source voltage (static)  
Gate source voltage (dynamic)  
Power dissipation  
-
78  
mJ  
mJ  
A
ID=4.4A; VDD=50V; see table 10  
-
0.39  
4.4  
120  
20  
ID=4.4A; VDD=50V; see table 10  
-
-
dv/dt  
VGS  
VGS  
Ptot  
Tstg  
Tj  
-
V/ns VDS=0...400V  
-20  
-30  
-
V
static;  
30  
V
AC (f>1 Hz)  
141  
150  
150  
n.a.  
23  
W
°C  
°C  
TC=25°C  
Storage temperature  
-55  
-55  
-
-
-
Operating junction temperature  
Mounting torque  
-
Ncm -  
Continuous diode forward current  
Diode pulse current2)  
IS  
-
A
A
TC=25°C  
IS,pulse  
-
66  
TC=25°C  
VDS=0...400V,ꢀISD<=6.7A,ꢀTj=25°Cꢀꢀꢀꢀ  
Reverse diode dv/dt3)  
dv/dt  
-
-
25  
V/ns  
see table 8  
VDS=0...400V,ꢀISD<=6.7A,ꢀTj=25°Cꢀꢀꢀꢀ  
Maximum diode commutation speed  
Insulation withstand voltage  
dif/dt  
-
-
-
-
740  
n.a.  
A/µs  
see table 8  
VISO  
V
Vrms,ꢀTC=25°C,ꢀt=1min  
1) Limited by Tj max  
.
2) Pulse width tp limited by Tj,max  
3) Identical low side and high side switch  
Final Data Sheet  
3
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600VꢀCoolMOSªꢀG7ꢀSJꢀPowerꢀDevice  
IPT60R102G7  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
Thermal resistance, junction - case  
RthJC  
-
-
-
-
0.888 °C/W -  
Thermal resistance, junction - ambient RthJA  
62  
45  
°C/W device on PCB, minimal footprint  
Device on 40mm*40mm*1.5mm  
epoxy PCB FR4 with 6cm² (one  
layer, 70µm thickness) copper area  
for drain connection and cooling.  
PCB is vertical without air stream  
cooling.  
Thermal resistance, junction - ambient  
for SMD version  
RthJA  
-
-
35  
-
°C/W  
°C  
Soldering temperature, wave- & reflow  
soldering allowed  
Tsold  
260  
reflow MSL1  
Final Data Sheet  
4
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600VꢀCoolMOSªꢀG7ꢀSJꢀPowerꢀDevice  
IPT60R102G7  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
600  
3
Max.  
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
V(GS)th  
-
V
V
VGS=0V,ꢀID=1mA  
3.5  
4
VDS=VGS,ꢀID=0.39mA  
-
-
-
10  
1
-
VDS=600,ꢀVGS=0V,ꢀTj=25°C  
VDS=600,ꢀVGS=0V,ꢀTj=150°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance  
IDSS  
µA  
nA  
Ω
IGSS  
-
-
100  
VGS=20V,ꢀVDS=0V  
-
-
0.088 0.102  
0.220  
VGS=10V,ꢀID=7.8A,ꢀTj=25°C  
VGS=10V,ꢀID=7.8A,ꢀTj=150°C  
RDS(on)  
RG  
-
-
0.8  
-
Ω
f=1MHz,ꢀopenꢀdrain  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
1320  
27  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance  
Ciss  
-
-
-
-
pF  
pF  
VGS=0V,ꢀVDS=400V,ꢀf=250kHz  
VGS=0V,ꢀVDS=400V,ꢀf=250kHz  
Coss  
Effective output capacitance, energy  
related1)  
Co(er)  
Co(tr)  
td(on)  
tr  
-
-
-
-
-
-
50  
516  
18  
5
-
-
-
-
-
-
pF  
pF  
ns  
ns  
ns  
ns  
VGS=0V,ꢀVDS=0...400V  
Effective output capacitance, time  
related2)  
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V  
VDD=400V,ꢀVGS=13V,ꢀID=7.8A,  
RG=5.3Ω;ꢀseeꢀtableꢀ9  
Turn-on delay time  
Rise time  
VDD=400V,ꢀVGS=13V,ꢀID=7.8A,  
RG=5.3Ω;ꢀseeꢀtableꢀ9  
VDD=400V,ꢀVGS=13V,ꢀID=7.8A,  
RG=5.3Ω;ꢀseeꢀtableꢀ9  
Turn-off delay time  
Fall time  
td(off)  
tf  
60  
4
VDD=400V,ꢀVGS=13V,ꢀID=7.8A,  
RG=5.3Ω;ꢀseeꢀtableꢀ9  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  
Values  
Typ.  
7
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
V
VDD=400V,ꢀID=7.8A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=7.8A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=7.8A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=7.8A,ꢀVGS=0ꢀtoꢀ10V  
Qgd  
12  
Qg  
34  
Gate plateau voltage  
Vplateau  
5.0  
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
Final Data Sheet  
5
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600VꢀCoolMOSªꢀG7ꢀSJꢀPowerꢀDevice  
IPT60R102G7  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics  
Values  
Typ.  
0.8  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Diode forward voltage  
Reverse recovery time  
VSD  
trr  
-
-
V
VGS=0V,ꢀIF=7.8A,ꢀTj=25°C  
VR=400V,ꢀIF=7.8A,ꢀdiF/dt=100A/µs;  
see table 8  
-
-
-
305  
3.1  
22  
-
-
-
ns  
VR=400V,ꢀIF=7.8A,ꢀdiF/dt=100A/µs;  
see table 8  
Reverse recovery charge  
Qrr  
Irrm  
µC  
A
VR=400V,ꢀIF=7.8A,ꢀdiF/dt=100A/µs;  
see table 8  
Peak reverse recovery current  
Final Data Sheet  
6
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600VꢀCoolMOSªꢀG7ꢀSJꢀPowerꢀDevice  
IPT60R102G7  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea  
102  
100 µs  
10 µs  
1 µs  
150  
1 ms  
10 ms  
120  
90  
60  
30  
0
101  
DC  
100  
10-1  
10-2  
10-3  
0
25  
50  
75  
100  
125  
150  
100  
101  
102  
103  
TCꢀ[°C]  
VDSꢀ[V]  
Ptot=f(TC)  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
102  
100  
10 µs  
1 µs  
100 µs  
1 ms  
10 ms  
0.5  
101  
100  
0.2  
0.1  
DC  
0.05  
10-1  
0.02  
0.01  
10-1  
10-2  
10-3  
single pulse  
10-2  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
7
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600VꢀCoolMOSªꢀG7ꢀSJꢀPowerꢀDevice  
IPT60R102G7  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics  
120  
60  
20 V  
20 V  
10 V  
8 V  
7 V  
10 V  
6 V  
8 V  
7 V  
100  
80  
60  
40  
20  
0
50  
40  
30  
20  
10  
0
5.5 V  
6 V  
5 V  
5.5 V  
4.5 V  
5 V  
4.5 V  
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance  
0.32  
0.28  
5.5 V  
6.5 V  
7 V  
6 V  
0.30  
0.28  
0.26  
0.24  
0.22  
0.20  
0.18  
0.16  
10 V  
0.24  
0.20  
20 V  
0.16  
98%  
typ  
0.12  
0.08  
0.04  
0
10  
20  
30  
40  
50  
60  
70  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
IDꢀ[A]  
Tjꢀ[°C]  
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(Tj);ꢀID=7.8ꢀA;ꢀVGS=10ꢀV  
Final Data Sheet  
8
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600VꢀCoolMOSªꢀG7ꢀSJꢀPowerꢀDevice  
IPT60R102G7  
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge  
120  
12  
25 °C  
100  
10  
8
120 V  
80  
60  
400 V  
6
150 °C  
40  
4
20  
0
2
0
0
2
4
6
8
10  
12  
0
10  
20  
30  
40  
VGSꢀ[V]  
Qgateꢀ[nC]  
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj  
VGS=f(Qgate);ꢀID=7.8ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
Diagramꢀ12:ꢀAvalancheꢀenergy  
102  
80  
70  
60  
50  
40  
30  
20  
10  
0
101  
125 °C  
25 °C  
100  
10-1  
0.30  
0.50  
0.70  
0.90  
1.10  
1.30  
25  
50  
75  
100  
125  
150  
VSDꢀ[V]  
Tjꢀ[°C]  
IF=f(VSD);ꢀparameter:ꢀTj  
EAS=f(Tj);ꢀID=4.4ꢀA;ꢀVDD=50ꢀV  
Final Data Sheet  
9
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600VꢀCoolMOSªꢀG7ꢀSJꢀPowerꢀDevice  
IPT60R102G7  
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagramꢀ14:ꢀTyp.ꢀcapacitances  
700  
105  
680  
660  
640  
620  
600  
580  
560  
540  
104  
Ciss  
103  
102  
Coss  
101  
Crss  
100  
10-1  
-60  
-20  
20  
60  
100  
140  
180  
0
100  
200  
300  
400  
500  
Tjꢀ[°C]  
VDSꢀ[V]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz  
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy  
6
5
4
3
2
1
0
0
100  
200  
300  
400  
500  
VDSꢀ[V]  
Eoss=f(VDS  
)
Final Data Sheet  
10  
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600VꢀCoolMOSªꢀG7ꢀSJꢀPowerꢀDevice  
IPT60R102G7  
5ꢀꢀꢀꢀꢀTestꢀCircuits  
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics  
Test circuit for diode characteristics  
Diode recovery waveform  
Rg1  
VDS  
Rg 2  
IF  
Rg1 = Rg 2  
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimesꢀ(ss)  
Switching times test circuit for inductive load  
Switching times waveform  
VDS  
90%  
10%  
VDS  
VGS  
VGS  
td(off)  
tf  
td(on)  
ton  
tr  
toff  
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀloadꢀ(ss)  
Unclamped inductive load test circuit  
Unclamped inductive waveform  
V(BR)DS  
ID  
VDS  
VDS  
VDS  
ID  
Final Data Sheet  
11  
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600VꢀCoolMOSªꢀG7ꢀSJꢀPowerꢀDevice  
IPT60R102G7  
6ꢀꢀꢀꢀꢀPackageꢀOutlines  
1) partially covered with Mold Flash  
MILLIMETERS  
INCHES  
DIM  
MIN  
2.20  
0.70  
9.70  
0.42  
0.40  
10.28  
MAX  
2.40  
0.90  
9.90  
0.50  
0.60  
10.58  
MIN  
MAX  
0.094  
0.035  
0.390  
0.020  
0.024  
0.416  
A
b
0.087  
0.028  
0.382  
0.017  
0.016  
0.405  
DOCUMENT NO.  
Z8B00176939  
b1  
b2  
c
0
SCALE  
D
D2  
E
3.30  
0.130  
2
9.70  
10.10  
0.382  
0.398  
E1  
E4  
E5  
e
7.50  
8.50  
0.295  
0.335  
0
2
4mm  
9.46  
1.20 (BSC)  
0.372  
0.047 (BSC)  
H
11.48  
6.55  
11.88  
6.75  
0.452  
0.258  
0.468  
0.266  
EUROPEAN PROJECTION  
H1  
H2  
H3  
H4  
N
7.15  
3.59  
3.26  
8
0.281  
0.141  
0.128  
8
K1  
L
4.18  
0.165  
ISSUE DATE  
28-04-2015  
1.40  
0.50  
0.50  
1.00  
2.62  
1.80  
0.90  
0.70  
1.30  
2.81  
0.055  
0.020  
0.020  
0.039  
0.103  
0.071  
0.035  
0.028  
0.051  
0.111  
L1  
L2  
L4  
L5  
REVISION  
01  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-HSOF-8,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
12  
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600VꢀCoolMOSªꢀG7ꢀSJꢀPowerꢀDevice  
IPT60R102G7  
7ꢀꢀꢀꢀꢀAppendixꢀA  
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks  
• IFXꢀCoolMOSTMꢀG7ꢀWebpage:ꢀwww.infineon.com  
• IFXꢀCoolMOSTMꢀG7ꢀapplicationꢀnote:ꢀwww.infineon.com  
• IFXꢀCoolMOSTMꢀG7ꢀsimulationꢀmodel:ꢀwww.infineon.com  
• IFXꢀDesignꢀtools:ꢀwww.infineon.com  
Final Data Sheet  
13  
Rev.ꢀ2.1,ꢀꢀ2020-10-27  
600VꢀCoolMOSªꢀG7ꢀSJꢀPowerꢀDevice  
IPT60R102G7  
RevisionꢀHistory  
IPT60R102G7  
Revision:ꢀ2020-10-27,ꢀRev.ꢀ2.1  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.0  
2.1  
Release of final version  
2016-12-15  
2020-10-27  
Content update diagram 2,3,4,7,8 and format update  
Trademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2020ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ  
(“Beschaffenheitsgarantie”)ꢀ.  
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
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Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
14  
Rev.ꢀ2.1,ꢀꢀ2020-10-27  

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