IPU80R4K5P7 [INFINEON]
800V CoolMOS™ P7超结MOSFET系列完全适合低功率SMPS应用，可完全满足性能，易用性和性价比等市场需求。它主要侧重于反激式应用，包括适配器和充电器，LED驱动器，音频SMPS，辅助和工业电源。;
| 型号： | IPU80R4K5P7 |
| 厂家： | 
Infineon |
| 描述： | 800V CoolMOS™ P7超结MOSFET系列完全适合低功率SMPS应用，可完全满足性能，易用性和性价比等市场需求。它主要侧重于反激式应用，包括适配器和充电器，LED驱动器，音频SMPS，辅助和工业电源。 驱动 驱动器 |
| 文件： | 总13页 (文件大小：1521K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPU80R4K5P7
MOSFET
IPAK
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
Theꢀlatestꢀ800VꢀCoolMOS™ꢀP7ꢀseriesꢀsetsꢀaꢀnewꢀbenchmarkꢀinꢀ800V
superꢀjunctionꢀtechnologiesꢀandꢀcombinesꢀbest-in-classꢀperformanceꢀwith
stateꢀofꢀtheꢀartꢀease-of-use,ꢀresultingꢀfromꢀInfineon’sꢀoverꢀ18ꢀyears
pioneeringꢀsuperꢀjunctionꢀtechnologyꢀinnovation.
tab
Features
•ꢀBest-in-classꢀFOMꢀRDS(on)ꢀ*ꢀEoss;ꢀreducedꢀQg,ꢀCiss,ꢀandꢀCoss
•ꢀBest-in-classꢀDPAKꢀRDS(on)
1
2
3
•ꢀBest-in-classꢀV(GS)thꢀofꢀ3VꢀandꢀsmallestꢀꢀV(GS)thꢀvariationꢀofꢀ±0.5V
•ꢀIntegratedꢀZenerꢀDiodeꢀESDꢀprotection
•ꢀFullyꢀqualifiedꢀacc.ꢀJEDECꢀforꢀIndustrialꢀApplications
•ꢀFullyꢀoptimizedꢀportfolio
Drain
Pin 2, Tab
Benefits
•ꢀBest-in-classꢀperformance
Gate
Pin 1
•ꢀEnablingꢀhigherꢀpowerꢀdensityꢀdesigns,ꢀBOMꢀsavingsꢀandꢀlower
assemblyꢀcosts
•ꢀEasyꢀtoꢀdriveꢀandꢀtoꢀparallel
Source
Pin 3
•ꢀBetterꢀproductionꢀyieldꢀbyꢀreducingꢀESDꢀrelatedꢀfailures
•ꢀLessꢀproductionꢀissuesꢀandꢀreducedꢀfieldꢀreturns
•ꢀEasyꢀtoꢀselectꢀrightꢀpartsꢀforꢀfineꢀtuningꢀofꢀdesigns
Potentialꢀapplications
RecommendedꢀforꢀhardꢀandꢀsoftꢀswitchingꢀflybackꢀtopologiesꢀforꢀLED
Lighting,ꢀlowꢀpowerꢀChargersꢀandꢀAdapters,ꢀAudio,ꢀAUXꢀpowerꢀand
Industrialꢀpower.ꢀAlsoꢀsuitableꢀforꢀPFCꢀstageꢀinꢀConsumerꢀapplications
andꢀSolar.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseperateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj=25°C
RDS(on),max
Qg,typ
Value
800
4.5
4
Unit
V
Ω
nC
A
ID
1.5
0.4
3
Eoss @ 500V
VGS(th),typ
µJ
V
ESD class (HBM)
1C
-
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPU80R4K5P7
PG-TO251-3
80R4K5P7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.2,ꢀꢀ2022-01-13
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPU80R4K5P7
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.ꢀ2.2,ꢀꢀ2022-01-13
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPU80R4K5P7
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
1.5
1.0
TC=25°C
A
Continuous drain current1)
ID
TC=100°C
Pulsed drain current2)
ID,pulse
EAS
-
-
-
-
-
-
-
-
-
-
2.6
1
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
mJ
mJ
A
ID=0.2A; VDD=50V
ID=0.2A; VDD=50V
-
EAR
0.02
0.2
100
IAR
dv/dt
V/ns VDS=0ꢀtoꢀ400V
-20
-30
-
-
20
30
static;
V
Gate source voltage
VGS
AC (f>1 Hz)
Power dissipation
Ptot
-
-
-
-
-
-
-
13
150
1
W
°C
A
TC=25°C
-
Operating and storage temperature
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt3)
Maximum diode commutation speed3) dif/dt
Tj,ꢀTstg
IS
-55
-
-
-
-
TC=25°C
TC=25°C
IS,pulse
2.6
1
A
dv/dt
V/ns VDS=0ꢀtoꢀ400V,ꢀISD<=0.2A,ꢀTj=25°C
A/µs VDS=0ꢀtoꢀ400V,ꢀISD<=0.2A,ꢀTj=25°C
50
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
9.4
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
62
°C/W leaded
Thermal resistance, junction - ambient
for SMD version
RthJA
-
-
-
-
-
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
Tsold
260
°C
1.6 mm (0.063 in.) from case for 10s
1) Limited by Tj max. Maximum duty cycle D=0.5
2) Pulse width tp limited by Tj,max
3)ꢀVDClink=400V;ꢀVDS,peak<V(BR)DSS;ꢀidenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG;ꢀꢀtcond<2µs
Final Data Sheet
3
Rev.ꢀ2.2,ꢀꢀ2022-01-13
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPU80R4K5P7
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
800
2.5
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
V
V
VGS=0V,ꢀID=1mA
3
3.5
VDS=VGS,ꢀID=0.02mA
-
-
-
10
1
-
VDS=800V,ꢀVGS=0V,ꢀTj=25°C
VDS=800V,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
IDSS
µA
Gate-source leakage curent incl. zener
diode
IGSS
RDS(on)
RG
-
-
1
µA
VGS=20V,ꢀVDS=0V
-
-
3.8
10
4.5
-
VGS=10V,ꢀID=0.4A,ꢀTj=25°C
VGS=10V,ꢀID=0.4A,ꢀTj=150°C
Drain-source on-state resistance
Gate resistance
Ω
Ω
-
5.0
-
f=250kHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
80
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=500V,ꢀf=250kHz
VGS=0V,ꢀVDS=500V,ꢀf=250kHz
Coss
3
Effective output capacitance, energy
related1)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
3
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0ꢀtoꢀ500V
Effective output capacitance, time
related2)
30
15
15
60
80
ID=constant,ꢀVGS=0V,ꢀVDS=0ꢀtoꢀ500V
VDD=400V,ꢀVGS=13V,ꢀID=0.4A,
RG=50Ω
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=0.4A,
RG=50Ω
VDD=400V,ꢀVGS=13V,ꢀID=0.4A,
RG=50Ω
Turn-off delay time
Fall time
td(off)
tf
VDD=400V,ꢀVGS=13V,ꢀID=0.4A,
RG=50Ω
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
0.6
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=640V,ꢀID=0.4A,ꢀVGS=0ꢀtoꢀ10V
VDD=640V,ꢀID=0.4A,ꢀVGS=0ꢀtoꢀ10V
VDD=640V,ꢀID=0.4A,ꢀVGS=0ꢀtoꢀ10V
VDD=640V,ꢀID=0.4A,ꢀVGS=0ꢀtoꢀ10V
Qgd
1.8
Qg
4.0
Gate plateau voltage
Vplateau
4.5
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ500V
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ500V
Final Data Sheet
4
Rev.ꢀ2.2,ꢀꢀ2022-01-13
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPU80R4K5P7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
VSD
trr
-
-
-
-
-
-
-
-
V
VGS=0V,ꢀIF=0.4A,ꢀTf=25°C
Reverse recovery time
600
ns
µC
A
VR=400V,ꢀIF=0.2A,ꢀdiF/dt=50A/µs
VR=400V,ꢀIF=0.2A,ꢀdiF/dt=50A/µs
VR=400V,ꢀIF=0.2A,ꢀdiF/dt=50A/µs
Reverse recovery charge
Peak reverse recovery current
Qrr
Irrm
1.6
3.6
Final Data Sheet
5
Rev.ꢀ2.2,ꢀꢀ2022-01-13
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPU80R4K5P7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
14
101
10 µs
100 µs
1 ms
10 ms
1 µs
12
10
8
100
DC
10-1
6
10-2
10-3
10-4
4
2
0
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
101
101
0.5
10 µs
100 µs
1 ms
10 ms
1 µs
100
0.2
0.1
DC
0.05
0.02
10-1
0.01
single pulse
100
10-2
10-3
10-4
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.2,ꢀꢀ2022-01-13
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPU80R4K5P7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
3.5
2.00
20 V
10 V
20 V
10 V
8 V
7 V
1.80
1.60
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00
8 V
7 V
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6 V
6 V
5.5 V
5 V
5.5 V
4.5 V
5 V
4.5 V
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
16
11
5 V
5.5 V
6 V
10
9
15
14
13
12
11
10
9
6.5 V
7 V
8
10 V
7
6
5
4
3
2
1
98%
typ
8
7
0.0
0.5
1.0
1.5
2.0
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=0.4ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
7
Rev.ꢀ2.2,ꢀꢀ2022-01-13
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPU80R4K5P7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
3.0
10
9
8
7
25 °C
2.5
2.0
120 V
640 V
6
1.5
5
4
3
2
1
0
150 °C
1.0
0.5
0.0
0
2
4
6
8
10
12
0
1
2
3
4
5
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=0.4ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
101
1.2
25 °C
125 °C
1.0
0.8
0.6
0.4
0.2
0.0
100
10-1
0.0
0.5
1.0
1.5
2.0
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=0.2ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
8
Rev.ꢀ2.2,ꢀꢀ2022-01-13
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPU80R4K5P7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
950
104
900
850
800
750
700
103
Ciss
102
101
Coss
100
Crss
10-1
-75 -50 -25
0
25
50
75 100 125 150 175
0
100
200
300
400
500
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
0
100
200
300
400
500
600
700
800
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
9
Rev.ꢀ2.2,ꢀꢀ2022-01-13
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPU80R4K5P7
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
10
Rev.ꢀ2.2,ꢀꢀ2022-01-13
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPU80R4K5P7
6ꢀꢀꢀꢀꢀPackageꢀOutlines
PACKAGE - GROUP
NUMBER:
PG-TO251-3-U04
REVISION: 01
DATE: 12.10.2021
MILLIMETERS
DIMENSIONS
MIN.
MAX.
2.41
1.14
0.89
1.15
5.50
0.60
0.89
6.22
5.77
6.73
5.21
A
A1
b
2.16
0.90
0.64
0.65
4.95
0.46
0.46
5.97
5.04
6.35
4.70
b1
b2
c
c1
D
D1
E
E1
e
2.29
4.58
3
e1
N
H
15.74
8.89
0.85
0.88
17.24
9.65
2.29
1.37
L
L1
L2
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO251-3,ꢀdimensionsꢀinꢀmm
Final Data Sheet
11
Rev.ꢀ2.2,ꢀꢀ2022-01-13
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPU80R4K5P7
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSꢀWebpage:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
12
Rev.ꢀ2.2,ꢀꢀ2022-01-13
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPU80R4K5P7
RevisionꢀHistory
IPU80R4K5P7
Revision:ꢀ2022-01-13,ꢀRev.ꢀ2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2.2
Release of final version
Corrected front page text
Updated Package Outlines
2016-07-05
2018-02-09
2022-01-13
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Final Data Sheet
13
Rev.ꢀ2.2,ꢀꢀ2022-01-13
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