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IPW50R350CP [INFINEON]

CoolMOSTM Power Transistor Features Ultra low gate charge Extreme dv/dt rated; CoolMOSTM功率晶体管特点超低栅极电荷至尊的dv / dt评分
IPW50R350CP
型号： IPW50R350CP
厂家： Infineon    Infineon
描述：

CoolMOSTM Power Transistor Features Ultra low gate charge Extreme dv/dt rated
CoolMOSTM功率晶体管特点超低栅极电荷至尊的dv / dt评分

晶体 栅极 晶体管 功率场效应晶体管 开关 脉冲 局域网
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IPW50R350CP  
CoolMOSTM Power Transistor  
Features  
Product Summary  
DS @Tjmax  
R DS(on),max  
Q g,typ  
V
550  
0.350  
19  
V
• Lowest figure-of-merit RON x Qg  
• Ultra low gate charge  
Ω
nC  
• Extreme dv/dt rated  
• High peak current capability  
• Pb-free lead plating; RoHS compliant  
• Quailfied according to JEDEC1) for target applications  
TO247-3-1  
CoolMOS CP is designed for:  
• Hard- & soft switching SMPS topologies  
• CCM PFC for Lamp Ballast, LCD & PDP TV  
• PWM for Lamp Ballast, LCD & PDP TV  
Type  
Package  
Marking  
IPW50R350CP  
PG-TO247  
5R350P  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
10  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
Continuous drain current  
A
6
Pulsed drain current2)  
22  
I D,pulse  
E AS  
I D=3.7 A, V DD=50 V  
I D=3.7 A, V DD=50 V  
Avalanche energy, single pulse  
Avalanche energy, repetitive t AR  
246  
0.37  
3.7  
mJ  
2),3)  
2),3)  
E AR  
I AR  
A
Avalanche current, repetitive t AR  
MOSFET dv /dt ruggedness  
Gate source voltage  
V
DS=0...400 V  
50  
dv /dt  
V GS  
V/ns  
V
±20  
±30  
89  
static  
AC (f>1 Hz)  
T C=25 °C  
P tot  
Power dissipation  
W
T j, T stg  
-55 ... 150  
60  
Operating and storage temperature  
Mounting torque  
°C  
M3 and M3.5 screws  
page 1  
Ncm  
Rev. 2.0  
2007-11-07  
Please note the new package dimensions arccording to PCN 2009-134-A  
IPW50R350CP  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
5.6  
Parameter  
Symbol Conditions  
Unit  
I S  
Continuous diode forward current  
Diode pulse current2)  
Reverse diode dv /dt 4)  
A
T C=25 °C  
I S,pulse  
22  
dv /dt  
15  
V/ns  
Values  
typ.  
Parameter  
Symbol Conditions  
Unit  
min.  
max.  
Thermal characteristics  
R thJC  
Thermal resistance, junction - case  
Thermal resistance, junction -  
ambient  
-
-
-
-
1.4  
62  
K/W  
R thJA  
leaded  
Soldering temperature,  
wavesoldering only allowed at leads  
1.6 mm (0.063 in.)  
from case for 10 s  
T sold  
-
-
260 °C  
Electrical characteristics, at T j=25 °C, unless otherwise specified  
Static characteristics  
V (BR)DSS  
V GS(th)  
V
V
GS=0 V, I D=250 µA  
DS=V GS, I D=0.37 mA  
Drain-source breakdown voltage  
Gate threshold voltage  
500  
2.5  
-
-
V
3
3.5  
V
DS=500 V, V GS=0 V,  
I DSS  
Zero gate voltage drain current  
-
-
1
-
µA  
T j=25 °C  
V
DS=500 V, V GS=0 V,  
-
-
-
10  
-
T j=150 °C  
I GSS  
V
V
GS=20 V, V DS=0 V  
GS=10 V, I D=5.6 A,  
Gate-source leakage current  
100 nA  
R DS(on)  
Drain-source on-state resistance  
0.32  
0.35  
Ω
T j=25 °C  
V
GS=10 V, I D=5.6 A,  
-
-
0.80  
2.2  
-
T j=150 °C  
R G  
Gate resistance  
f =1 MHz, open drain  
-
Ω
Rev. 2.0  
page 2  
2007-11-07  
Please note the new package dimensions arccording to PCN 2009-134-A  
IPW50R350CP  
Values  
typ.  
Parameter  
Symbol Conditions  
Unit  
min.  
max.  
Dynamic characteristics  
C iss  
Input capacitance  
Output capacitance  
-
-
1020  
46  
-
-
pF  
V
GS=0 V, V DS=100 V,  
f =1 MHz  
C oss  
Effective output capacitance, energy  
related5)  
C o(er)  
-
-
43  
92  
-
-
V
GS=0 V, V DS=0 V  
to 400 V  
Effective output capacitance, time  
related6)  
C o(tr)  
t d(on)  
t r  
t d(off)  
t f  
Turn-on delay time  
Rise time  
-
-
-
-
35  
14  
80  
12  
-
-
-
-
ns  
V
V
DD=400 V,  
GS=10 V, I D=5.6 A,  
Turn-off delay time  
Fall time  
R G=30.9 Ω  
Gate Charge Characteristics  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Q gs  
-
-
-
-
4
6
-
-
nC  
Q gd  
V
V
DD=400 V, I D=5.6 A,  
GS=0 to 10 V  
Q g  
19  
5.2  
25  
-
V plateau  
Gate plateau voltage  
V
V
Reverse Diode  
V
GS=0 V, I F=5.6 A,  
V SD  
Diode forward voltage  
-
0.9  
1.2  
T j=25 °C  
t rr  
Reverse recovery time  
-
-
-
250  
2.3  
19  
-
-
-
ns  
µC  
A
V R=400 V, I F=I S,  
di F/dt =100 A/µs  
Q rr  
I rrm  
Reverse recovery charge  
Peak reverse recovery current  
1) J-STD20 and JESD22  
2) Pulse width t p limited by T j,max  
3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.  
4) I SD≤I D, di /dt ≤400A/µs, V DClink=400V, V peak<V (BR)DSS, T j<T jmax, identical low and high side switch  
5) C o(tr) is a fixed capacitance that gives the same charging time asC oss while V DS is rising from 0 to 80% V DSS.  
6) C o(tr) is a fixed capacitance that gives the same charging time asC oss while V DS is rising from 0 to 80% V DSS.  
Rev. 2.0  
page 3  
2007-11-07  
Please note the new package dimensions arccording to PCN 2009-134-A  
IPW50R350CP  
1 Power dissipation  
2 Safe operating area  
I D=f(V DS); T C=25 °C; D =0  
parameter: t p  
P
tot=f(T C)  
102  
100  
limited by on-state  
resistance  
1 µs  
80  
60  
40  
20  
10 µs  
101  
100 µs  
1 ms  
10 ms  
DC  
100  
10-1  
0
0
100  
101  
102  
103  
25  
50  
75  
T
100  
C [°C]  
125  
150  
175  
V
DS [V]  
3 Max. transient thermal impedance  
(thJC)=f(tp);  
4 Typ. output characteristics  
I D=f(V DS); T j=25 °C  
Z
parameter: D=t p/T  
parameter: V GS  
101  
30  
25  
20 V  
10 V  
8 V  
7 V  
100  
20  
15  
10  
5
0.5  
0.2  
6 V  
0.1  
0.05  
10-1  
0.02  
5.5 V  
0.01  
single pulse  
5 V  
4.5 V  
10-2  
0
10-5  
10-4  
10-3  
10-2  
10-1  
100  
0
5
10  
DS [V]  
15  
20  
t
p [s]  
V
Rev. 2.0  
page 4  
2007-11-07  
Please note the new package dimensions arccording to PCN 2009-134-A  
IPW50R350CP  
5 Typ. output characteristics  
I D=f(V DS); T j=150 °C  
parameter: V GS  
6 Typ. drain-source on-state resistance  
DS(on)=f(I D); T j=150 °C  
R
parameter: V GS  
1.6  
18  
15  
12  
9
20 V  
10 V  
8 V  
7 V  
6 V  
1.4  
1.2  
1
10 V  
6.5 V  
7 V  
6 V  
5.5 V  
5.5 V  
5 V  
6
4.5 V  
0.8  
3
0.6  
0
0
5
10  
15  
20  
0
5
10  
15  
20  
V
DS [V]  
ID [A]  
7 Drain-source on-state resistance  
8 Typ. transfer characteristics  
I D=f(V GS); |V DS|>2|I D|R DS(on)max  
parameter: T j  
R
DS(on)=f(T j); I D=5.6 A; V GS=10 V  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
35  
30  
25  
20  
15  
10  
5
25 °C  
150 °C  
0.3  
98 %  
typ  
0.2  
0.1  
0
0
-60  
-20  
20  
60  
T j [°C]  
100  
140  
180  
0
2
4
6
8
10  
V
GS [V]  
Rev. 2.0  
page 5  
2007-11-07  
Please note the new package dimensions arccording to PCN 2009-134-A  
IPW50R350CP  
9 Typ. gate charge  
GS=f(Q gate); I D=5.6 A pulsed  
10 Forward characteristics of reverse diode  
I F=f(V SD  
V
)
parameter: V DD  
parameter: T j  
102  
10  
25 °C, 98%  
8
6
4
2
150 °C, 98%  
100 V  
101  
150 °C  
25 °C  
400 V  
100  
10-1  
0
0
0
0.5  
1
1.5  
2
5
10  
gate [nC]  
15  
20  
Q
V
SD [V]  
11 Avalanche energy  
12 Drain-source breakdown voltage  
E
AS=f(T j); I D=3.7 A; V DD=50 V  
V
BR(DSS)=f(T j); I D=0.25 mA  
250  
580  
560  
540  
520  
500  
480  
460  
440  
200  
150  
100  
50  
0
25  
75  
125  
175  
-60  
-20  
20  
60  
100  
140  
180  
T j [°C]  
T j [°C]  
Rev. 2.0  
page 6  
2007-11-07  
Please note the new package dimensions arccording to PCN 2009-134-A  
IPW50R350CP  
13 Typ. capacitances  
14 Typ. Coss stored energy  
C =f(V DS); V GS=0 V; f =1 MHz  
E oss= f(V DS)  
104  
5
4
3
2
1
Ciss  
103  
102  
Coss  
101  
Crss  
100  
0
0
0
100  
200  
300  
DS [V]  
400  
500  
100  
200  
300  
DS [V]  
400  
500  
V
V
Rev. 2.0  
page 7  
2007-11-07  
Please note the new package dimensions arccording to PCN 2009-134-A  
IPW50R350CP  
Definition of diode switching characteristics  
Rev. 2.0  
page 8  
2007-11-07  
Please note the new package dimensions arccording to PCN 2009-134-A  
IPW50R350CP  
PG-TO247 Outline  
Rev. 2.0  
page 9  
2007-11-07  
Please note the new package dimensions arccording to PCN 2009-134-A  
IPW50R350CP  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
© 2007 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of  
conditions or characteristics. With respect to any examples or hints given herein, any typical  
values stated herein and/or any information regarding the application of the device,  
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,  
including without limitation, warranties of non-infringement of intellectual property rights  
of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please  
contact the nearest Infineon Technologies Office  
(www.infineon.com).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information  
on the types in question, please contact the nearest Infineon Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems only with  
the express written approval of Infineon Technologies, if a failure of such components can  
reasonably be expected to cause the failure of that life-support device or system or to affect  
the safety or effectiveness of that device or system. Life support devices or systems are  
intended to be implanted in the human body or to support and/or maintain and sustain  
and/or protect human life. If they fail, it is reasonable to assume that the health of the user  
or other persons may be endangered.  
Rev. 2.0  
page 10  
2007-11-07  
Please note the new package dimensions arccording to PCN 2009-134-A  
Data sheet erratum  
PCN 2009-134-A  
New package outlines TO-247  
1
New package outlines TO-247  
Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package  
PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.)  
Figure 1  
Outlines TO-247, dimensions in mm/inches  
Final Data Sheet Erratum  
Rev. 2.0, 2010-02-01  

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