IPW60R024CFD7 [INFINEON]

Power Field-Effect Transistor,;
IPW60R024CFD7
型号: IPW60R024CFD7
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor,

文件: 总14页 (文件大小:1025K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IPW60R024CFD7  
MOSFET  
PG-TOꢀ247-3  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower  
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand  
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀTheꢀlatestꢀCoolMOS™ꢀCFD7ꢀisꢀthe  
successorꢀtoꢀtheꢀCoolMOS™ꢀCFD2ꢀseriesꢀandꢀisꢀanꢀoptimizedꢀplatform  
tailoredꢀtoꢀtargetꢀsoftꢀswitchingꢀapplicationsꢀsuchꢀasꢀphase-shiftꢀfull-bridge  
(ZVS)ꢀandꢀLLC.ꢀResultingꢀfromꢀreducedꢀgateꢀchargeꢀ(Qg),ꢀbest-in-class  
reverseꢀrecoveryꢀchargeꢀ(Qrr)ꢀandꢀimprovedꢀturnꢀoffꢀbehaviorꢀCoolMOS™  
CFD7ꢀoffersꢀhighestꢀefficiencyꢀinꢀresonantꢀtopologies.ꢀAsꢀpartꢀofꢀInfineon’s  
fastꢀbodyꢀdiodeꢀportfolio,ꢀthisꢀnewꢀproductꢀseriesꢀblendsꢀallꢀadvantagesꢀof  
aꢀfastꢀswitchingꢀtechnologyꢀtogetherꢀwithꢀsuperiorꢀhardꢀcommutation  
robustness,ꢀwithoutꢀsacrificingꢀeasyꢀimplementationꢀinꢀtheꢀdesign-in  
process.ꢀTheꢀCoolMOS™ꢀCFD7ꢀtechnologyꢀmeetsꢀhighestꢀefficiencyꢀand  
reliabilityꢀstandardsꢀandꢀfurthermoreꢀsupportsꢀhighꢀpowerꢀdensity  
solutions.ꢀAltogether,ꢀCoolMOS™ꢀCFD7ꢀmakesꢀresonantꢀswitching  
topologiesꢀmoreꢀefficient,ꢀmoreꢀreliable,ꢀlighterꢀandꢀcooler.  
Drain  
Pin 2  
Gate  
Pin 1  
Features  
•ꢀUltra-fastꢀbodyꢀdiode  
Source  
Pin 3  
•ꢀLowꢀgateꢀcharge  
•ꢀBest-in-classꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)  
•ꢀImprovedꢀMOSFETꢀreverseꢀdiodeꢀdv/dtꢀandꢀdiF/dtꢀruggedness  
•ꢀLowestꢀFOMꢀRDS(on)*QgꢀandꢀRDS(on)*Eoss  
•ꢀBest-in-classꢀRDS(on)ꢀinꢀSMDꢀandꢀTHDꢀpackages  
Benefits  
•ꢀExcellentꢀhardꢀcommutationꢀruggedness  
•ꢀHighestꢀreliabilityꢀforꢀresonantꢀtopologies  
•ꢀHighestꢀefficiencyꢀwithꢀoutstandingꢀease-of-useꢀ/ꢀperformanceꢀtradeoff  
•ꢀEnablingꢀincreasedꢀpowerꢀdensityꢀsolutions  
Potentialꢀapplications  
SuiteableꢀforꢀSoftꢀSwitchingꢀtopologies  
Optimizedꢀforꢀphase-shiftꢀfull-bridgeꢀ(ZVS),ꢀLLCꢀApplicationsꢀ–ꢀServer,  
Telecom,ꢀEVꢀCharging  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
Value  
Unit  
650  
V
24  
m  
nC  
A
Qg,typ  
183  
ID,pulse  
360  
Eoss @ 400V  
Body diode diF/dt  
21.1  
1300  
µJ  
A/µs  
Typeꢀ/ꢀOrderingꢀCode  
IPW60R024CFD7  
Package  
Marking  
RelatedꢀLinks  
PG-TO 247-3  
60R024F7  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2019-02-28  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPW60R024CFD7  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2019-02-28  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPW60R024CFD7  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
77  
49  
TC=25°C  
A
Continuous drain current1)  
ID  
TC=100°C  
Pulsed drain current2)  
ID,pulse  
EAS  
EAR  
IAS  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
360  
424  
2.12  
8.6  
120  
20  
A
TC=25°C  
Avalanche energy, single pulse  
Avalanche energy, repetitive  
Avalanche current, single pulse  
MOSFET dv/dt ruggedness  
Gate source voltage (static)  
Gate source voltage (dynamic)  
Power dissipation  
-
mJ  
mJ  
A
ID=8.6A; VDD=50V; see table 10  
-
ID=8.6A; VDD=50V; see table 10  
-
-
dv/dt  
VGS  
VGS  
Ptot  
Tstg  
Tj  
-
V/ns VDS=0...400V  
-20  
-30  
-
V
static;  
30  
V
AC (f>1 Hz)  
320  
150  
150  
60  
W
°C  
°C  
TC=25°C  
Storage temperature  
-55  
-55  
-
-
-
Operating junction temperature  
Mounting torque  
-
Ncm M3 and M3.5 screws  
Continuous diode forward current  
Diode pulse current2)  
IS  
-
77  
A
A
TC=25°C  
TC=25°C  
IS,pulse  
-
360  
VDS=0...400V,ꢀISD<=77A,ꢀTj=25°Cꢀꢀꢀꢀꢀ  
see table 8  
Reverse diode dv/dt3)  
dv/dt  
-
-
70  
V/ns  
VDS=0...400V,ꢀISD<=77A,ꢀTj=25°Cꢀꢀꢀꢀꢀ  
see table 8  
Maximum diode commutation speed  
Insulation withstand voltage  
diF/dt  
-
-
-
-
1300 A/µs  
n.a.  
VISO  
V
Vrms,ꢀTC=25°C,ꢀt=1min  
1) Limited by Tj,max  
.
2) Pulse width tp limited by Tj,max  
3) Identical low side and high side switch with identical RG  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2019-02-28  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPW60R024CFD7  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
0.39  
62  
Thermal resistance, junction - case  
RthJC  
-
-
-
-
°C/W -  
Thermal resistance, junction - ambient RthJA  
°C/W leaded  
Thermal resistance, junction - ambient  
for SMD version  
RthJA  
-
-
-
-
-
°C/W n.a.  
Soldering temperature, wavesoldering  
only allowed at leads  
Tsold  
260  
°C  
1.6mm (0.063 in.) from case for 10s  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2019-02-28  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPW60R024CFD7  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
600  
3.5  
Typ.  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
V(GS)th  
-
V
V
VGS=0V,ꢀID=1mA  
4
4.5  
VDS=VGS,ꢀID=2.12mA  
-
-
-
44  
1
176  
VDS=600V,ꢀVGS=0V,ꢀTj=25°C  
VDS=600V,ꢀVGS=0V,ꢀTj=125°C  
Zero gate voltage drain current1)  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance  
IDSS  
µA  
nA  
IGSS  
-
-
100  
VGS=20V,ꢀVDS=0V  
-
-
0.019 0.024  
0.043  
VGS=10V,ꢀID=42.4A,ꢀTj=25°C  
VGS=10V,ꢀID=42.4A,ꢀTj=150°C  
RDS(on)  
RG  
-
-
3.1  
-
f=1MHz,ꢀopenꢀdrain  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance  
Ciss  
-
-
7268  
143  
-
-
pF  
pF  
VGS=0V,ꢀVDS=400V,ꢀf=250kHz  
VGS=0V,ꢀVDS=400V,ꢀf=250kHz  
Coss  
Effective output capacitance, energy  
related2)  
Co(er)  
Co(tr)  
td(on)  
tr  
-
-
-
-
-
-
264  
2729  
59  
-
-
-
-
-
-
pF  
pF  
ns  
ns  
ns  
ns  
VGS=0V,ꢀVDS=0...400V  
Effective output capacitance, time  
related3)  
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V  
VDD=400V,ꢀVGS=10V,ꢀID=19.0A,  
RG=1.8;ꢀseeꢀtableꢀ9  
Turn-on delay time  
Rise time  
VDD=400V,ꢀVGS=10V,ꢀID=19.0A,  
RG=1.8;ꢀseeꢀtableꢀ9  
32  
VDD=400V,ꢀVGS=10V,ꢀID=19.0A,  
RG=1.8;ꢀseeꢀtableꢀ9  
Turn-off delay time  
Fall time  
td(off)  
tf  
170.6  
9.6  
VDD=400V,ꢀVGS=10V,ꢀID=19.0A,  
RG=1.8;ꢀseeꢀtableꢀ9  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  
Values  
Typ.  
39  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
V
VDD=400V,ꢀID=19.0A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=19.0A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=19.0A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=19.0A,ꢀVGS=0ꢀtoꢀ10V  
Qgd  
66  
Qg  
183  
5.3  
Gate plateau voltage  
Vplateau  
1) Maximum specification is defined by calculated six sigma upper confidence bound  
2)Co(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
3)Co(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2019-02-28  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPW60R024CFD7  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics  
Values  
Typ.  
1.0  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Diode forward voltage  
Reverse recovery time  
VSD  
trr  
-
-
V
VGS=0V,ꢀIF=42.4A,ꢀTj=25°C  
VR=400V,ꢀIF=19.0A,ꢀdiF/dt=100A/µs;  
see table 8  
-
-
-
175.3 263  
ns  
VR=400V,ꢀIF=19.0A,ꢀdiF/dt=100A/µs;  
see table 8  
Reverse recovery charge  
Qrr  
Irrm  
1.3  
2.6  
-
µC  
A
VR=400V,ꢀIF=19.0A,ꢀdiF/dt=100A/µs;  
see table 8  
Peak reverse recovery current  
11.57  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2019-02-28  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPW60R024CFD7  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea  
350  
103  
1 µs  
300  
250  
200  
150  
100  
50  
10 µs  
102  
101  
100 µs  
1 ms  
100  
10-1  
10-2  
10-3  
10 ms  
DC  
0
0
25  
50  
75  
100  
125  
150  
100  
101  
102  
103  
TCꢀ[°C]  
VDSꢀ[V]  
Ptot=f(TC)  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
100  
1 µs  
102  
101  
10 µs  
0.5  
10-1  
100 µs  
0.2  
0.1  
100  
1 ms  
0.05  
10-1  
10-2  
10-3  
10-2  
0.02  
10 ms  
DC  
0.01  
single pulse  
10-3  
100  
101  
102  
103  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2019-02-28  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPW60R024CFD7  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics  
500  
350  
20 V  
10 V  
20 V  
300  
250  
200  
150  
100  
50  
8 V  
10 V  
400  
8 V  
7 V  
300  
7 V  
200  
6 V  
5.5 V  
5 V  
100  
6 V  
5.5 V  
4.5 V 5 V  
4.5 V  
0
0
0
5
10  
15  
20  
0
5
10  
15  
20  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance  
0.080  
2.5  
2.0  
1.5  
1.0  
0.5  
7 V  
5.5 V  
0.065  
6.5 V  
20 V  
6 V  
10 V  
0.050  
0.035  
0
50  
100  
150  
200  
250  
300  
350  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
IDꢀ[A]  
Tjꢀ[°C]  
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(Tj);ꢀID=42.4ꢀA;ꢀVGS=10ꢀV  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2019-02-28  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPW60R024CFD7  
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge  
500  
12  
10  
8
400  
25 °C  
400 V  
120 V  
300  
150 °C  
6
200  
100  
0
4
2
0
0
2
4
6
8
10  
12  
0
30  
60  
90  
120  
150  
180  
210  
240  
VGSꢀ[V]  
Qgateꢀ[nC]  
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj  
VGS=f(Qgate);ꢀID=19.0ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
Diagramꢀ12:ꢀAvalancheꢀenergy  
103  
500  
400  
300  
200  
100  
0
102  
25 °C  
101  
125 °C  
100  
10-1  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
25  
50  
75  
100  
125  
150  
VSDꢀ[V]  
Tjꢀ[°C]  
IF=f(VSD);ꢀparameter:ꢀTj  
EAS=f(Tj);ꢀID=8.6ꢀA;ꢀVDD=50ꢀV  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2019-02-28  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPW60R024CFD7  
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagramꢀ14:ꢀTyp.ꢀcapacitances  
690  
106  
105  
104  
660  
630  
600  
570  
540  
Ciss  
103  
102  
101  
100  
Coss  
Crss  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
100  
200  
300  
400  
500  
Tjꢀ[°C]  
VDSꢀ[V]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz  
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy  
30  
25  
20  
15  
10  
5
0
0
100  
200  
300  
400  
500  
VDSꢀ[V]  
Eoss=f(VDS  
)
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2019-02-28  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPW60R024CFD7  
5ꢀꢀꢀꢀꢀTestꢀCircuits  
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics  
Test circuit for diode characteristics  
Diode recovery waveform  
Rg1  
VDS  
Rg 2  
IF  
Rg1 = Rg 2  
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes  
Switching times test circuit for inductive load  
Switching times waveform  
VDS  
90%  
10%  
VDS  
VGS  
VGS  
td(off)  
tf  
td(on)  
ton  
tr  
toff  
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload  
Unclamped inductive load test circuit  
Unclamped inductive waveform  
V(BR)DS  
ID  
VDS  
VDS  
VDS  
ID  
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2019-02-28  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPW60R024CFD7  
6ꢀꢀꢀꢀꢀPackageꢀOutlines  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ247-3,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
12  
Rev.ꢀ2.0,ꢀꢀ2019-02-28  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPW60R024CFD7  
7ꢀꢀꢀꢀꢀAppendixꢀA  
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks  
IFXꢀCoolMOSꢀCFD7ꢀWebpage:ꢀwww.infineon.com  
IFXꢀCoolMOSꢀCFD7ꢀapplicationꢀnote:ꢀwww.infineon.com  
IFXꢀCoolMOSꢀCFD7ꢀsimulationꢀmodel:ꢀwww.infineon.com  
IFXꢀDesignꢀtools:ꢀwww.infineon.com  
Final Data Sheet  
13  
Rev.ꢀ2.0,ꢀꢀ2019-02-28  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor  
IPW60R024CFD7  
RevisionꢀHistory  
IPW60R024CFD7  
Revision:ꢀ2019-02-28,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
Release of final version  
2.0  
2019-02-28  
Trademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
WeꢀListenꢀtoꢀYourꢀComments  
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improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
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81726ꢀMünchen,ꢀGermany  
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
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Final Data Sheet  
14  
Rev.ꢀ2.0,ꢀꢀ2019-02-28  

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