IPW60R040C7 [INFINEON]
Power Field-Effect Transistor, 50A I(D), 600V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,;
| 型号： | IPW60R040C7 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 50A I(D), 600V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 局域网 开关 脉冲 晶体管 |
| 文件： | 总15页 (文件大小：1600K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
CoolMOS™ꢀC7
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPW60R040C7
DataꢀSheet
Rev.ꢀ2.0
Final
PowerꢀManagementꢀ&ꢀMultimarket
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPW60R040C7
TO-247
1ꢀꢀꢀꢀꢀDescription
CoolMOS™ꢀC7ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.
600VꢀCoolMOS™ꢀC7ꢀseriesꢀcombinesꢀtheꢀexperienceꢀofꢀtheꢀleadingꢀSJ
MOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.
Theꢀ600VꢀC7ꢀisꢀtheꢀfirstꢀtechnologyꢀeverꢀwithꢀRDS(on)*Aꢀbelowꢀ1Ohm*mm².
Features
•ꢀSuitableꢀforꢀhardꢀandꢀsoftꢀswitchingꢀ(PFCꢀandꢀhighꢀperformanceꢀLLC)
•ꢀIncreasedꢀMOSFETꢀdv/dtꢀruggednessꢀtoꢀ120V/ns
•ꢀIncreasedꢀefficiencyꢀdueꢀtoꢀbestꢀinꢀclassꢀFOMꢀRDS(on)*EossꢀandꢀRDS(on)*Qg
•ꢀBestꢀinꢀclassꢀRDS(on)ꢀ/package
Drain
Pin 2, Tab
•ꢀQualifiedꢀforꢀindustrialꢀgradeꢀapplicationsꢀaccordingꢀtoꢀJEDECꢀ(J-STD20
andꢀJESD22)
Gate
Pin 1
Source
Pin 3
Benefits
•ꢀIncreasedꢀeconomiesꢀofꢀscaleꢀbyꢀuseꢀinꢀPFCꢀandꢀPWMꢀtopologiesꢀinꢀthe
application
•ꢀHigherꢀdv/dtꢀlimitꢀenablesꢀfasterꢀswitchingꢀleadingꢀtoꢀhigherꢀefficiency
•ꢀEnablingꢀhigherꢀsystemꢀefficiencyꢀbyꢀlowerꢀswitchingꢀlosses
•ꢀIncreasedꢀpowerꢀdensityꢀsolutionsꢀdueꢀtoꢀsmallerꢀpackages
•ꢀSuitableꢀforꢀapplicationsꢀsuchꢀasꢀserver,ꢀtelecomꢀandꢀsolar
•ꢀHigherꢀswitchingꢀfrequenciesꢀpossibleꢀwithoutꢀlossꢀinꢀefficiencyꢀdueꢀto
lowꢀEossꢀandꢀQg
Applications
PFCꢀstagesꢀandꢀPWMꢀstagesꢀ(TTF,ꢀLLC)ꢀforꢀhighꢀpower/performance
SMPSꢀe.g.ꢀComputing,ꢀServer,ꢀTelecom,ꢀUPSꢀandꢀSolar.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj,max
RDS(on),max
Qg.typ
Value
650
40
Unit
V
mΩ
nC
A
107
211
ID,pulse
ID,continuous @ Tj<150°C 73
A
Eoss@400V
12.6
450
µJ
Body diode di/dt
A/µs
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPW60R040C7
PG-TO 247
60C7040
see Appendix A
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2015-05-08
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPW60R040C7
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2015-05-08
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPW60R040C7
2ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
-
-
-
-
50
32
TC=25°C
A
Continuous drain current1)
ID
TC=100°C
Pulsed drain current2)
ID,pulse
EAS
EAR
IAS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
211
249
1.24
7.4
120
20
A
TC=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
-
mJ
mJ
A
ID=7.4A; VDD=50V; see table 10
-
ID=7.4A; VDD=50V; see table 10
-
-
dv/dt
VGS
VGS
Ptot
Tstg
Tj
-
V/ns VDS=0...400V
-20
-30
-
V
static;
30
V
AC (f>1 Hz)
227
150
150
60
W
°C
°C
TC=25°C
Storage temperature
-55
-55
-
-
-
Operating junction temperature
Mounting torque
-
Ncm M3 and M3.5 screws
Continuous diode forward current
Diode pulse current2)
IS
-
50
A
A
TC=25°C
TC=25°C
IS,pulse
-
211
VDS=0...400V,ꢀISD<=11.4A,ꢀTj=25°Cꢀꢀ
Reverse diode dv/dt3)
dv/dt
-
-
20
V/ns
see table 8
VDS=0...400V,ꢀISD<=11.4A,ꢀTj=25°Cꢀꢀ
Maximum diode commutation speed
Insulation withstand voltage
dif/dt
-
-
-
-
450
n.a.
A/µs
see table 8
VISO
V
Vrms,ꢀTC=25°C,ꢀt=1min
1) Limited by Tj max
.
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2015-05-08
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPW60R040C7
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
0.55
62
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
°C/W leaded
Thermal resistance, junction - ambient
for SMD version
RthJA
-
-
-
-
-
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
Tsold
260
°C
1.6mm (0.063 in.) from case for 10s
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2015-05-08
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPW60R040C7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
3
Typ.
-
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
V(GS)th
-
V
V
VGS=0V,ꢀID=1mA
3.5
4
VDS=VGS,ꢀID=1.24mA
-
-
-
10
1
-
VDS=600,ꢀVGS=0V,ꢀTj=25°C
VDS=600,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
nA
Ω
IGSS
-
-
100
VGS=20V,ꢀVDS=0V
-
-
0.034 0.040
0.077
VGS=10V,ꢀID=24.9A,ꢀTj=25°C
VGS=10V,ꢀID=24.9A,ꢀTj=150°C
RDS(on)
RG
-
-
0.77
-
Ω
f=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
4340
85
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
Coss
Effective output capacitance, energy
related1)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
158
1640
18.5
11
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...400V
Effective output capacitance, time
related2)
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V
VDD=400V,ꢀVGS=13V,ꢀID=24.9A,
RG=3.3Ω;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=24.9A,
RG=3.3Ω;ꢀseeꢀtableꢀ9
VDD=400V,ꢀVGS=13V,ꢀID=24.9A,
RG=3.3Ω;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
81
VDD=400V,ꢀVGS=13V,ꢀID=24.9A,
RG=3.3Ω;ꢀseeꢀtableꢀ9
3.2
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
22
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=400V,ꢀID=24.9A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=24.9A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=24.9A,ꢀVGS=0ꢀtoꢀ10V
VDD=400V,ꢀID=24.9A,ꢀVGS=0ꢀtoꢀ10V
Qgd
36
Qg
107
5.0
Gate plateau voltage
Vplateau
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2015-05-08
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPW60R040C7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
Diode forward voltage
Reverse recovery time
VSD
trr
-
0.9
-
V
VGS=0V,ꢀIF=24.9A,ꢀTj=25°C
VR=400V,ꢀIF=24.9A,ꢀdiF/dt=100A/µs;
see table 8
-
-
-
460
9.2
40
-
-
-
ns
VR=400V,ꢀIF=24.9A,ꢀdiF/dt=100A/µs;
see table 8
Reverse recovery charge
Qrr
Irrm
µC
A
VR=400V,ꢀIF=24.9A,ꢀdiF/dt=100A/µs;
see table 8
Peak reverse recovery current
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2015-05-08
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPW60R040C7
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
250
103
1 µs
10 µs
100 µs
1 ms
102
101
10 ms
200
150
100
50
DC
100
10-1
10-2
10-3
0
0
25
50
75
100
125
150
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
100
10 µs
1 µs
100 µs
102
1 ms
10 ms
0.5
0.2
DC
101
100
10-1
10-2
10-3
10-1
0.1
0.05
0.02
0.01
single pulse
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2015-05-08
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPW60R040C7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
350
250
20 V
10 V
300
250
200
150
100
50
200
8 V
7 V
20 V
10 V
7 V
8 V
150
100
50
6 V
5.5 V
5 V
6 V
5.5 V
4.5 V
5 V
4.5 V
0
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.13
0.10
5.5 V
6.5 V
6 V
7 V
0.09
0.08
0.07
0.12
0.11
0.10
0.09
0.08
0.07
10 V
20 V
0.06
98%
0.05
typ
0.04
0.03
0.02
0
20
40
60
80
100 120 140 160 180
-50
-25
0
25
50
75
100
125
150
IDꢀ[A]
Tjꢀ[°C]
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=24.9ꢀA;ꢀVGS=10ꢀV
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2015-05-08
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPW60R040C7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
350
12
120 V
300
250
200
150
100
50
10
25 °C
400 V
8
6
4
2
0
150 °C
0
0
2
4
6
8
10
12
0
20
40
60
80
100
120
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=24.9ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
102
250
225
200
175
150
125
100
75
125 °C
101
25 °C
100
50
25
10-1
0
0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80
25
50
75
100
125
150
VSDꢀ[V]
Tjꢀ[°C]
IF=f(VSD);ꢀparameter:ꢀTj
EAS=f(Tj);ꢀID=7.4ꢀA;ꢀVDD=50ꢀV
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2015-05-08
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPW60R040C7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
700
105
680
660
640
620
600
580
560
540
520
104
Ciss
103
Coss
102
101
Crss
100
-60
-30
0
30
60
90
120
150
0
100
200
300
400
Tjꢀ[°C]
VDSꢀ[V]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
14
12
10
8
6
4
2
0
0
100
200
300
400
VDSꢀ[V]
Eoss=f(VDS
)
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2015-05-08
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPW60R040C7
6ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V,I
VDS
Rg1
VDS(peak)
VDS
trr
VDS
IF
tF
tS
dIF / dt
Rg 2
IF
t
10%Irrm
Q
F
Q
S
IF
dI / dt
rr
trr =tF +tS
rr
Irrm
Q =QF +Q
S
Rg1 = Rg 2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VGS
VGS
td(off)
tf
td(on)
ton
tr
toff
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
VDS
ID
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2015-05-08
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPW60R040C7
7ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ247,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2015-05-08
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPW60R040C7
8ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolMOSTMꢀC7ꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolMOSTMꢀC7ꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolMOSTMꢀC7ꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2015-05-08
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPW60R040C7
RevisionꢀHistory
IPW60R040C7
Revision:ꢀ2015-05-08,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2015-05-08
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Final Data Sheet
15
Rev.ꢀ2.0,ꢀꢀ2015-05-08
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