IPW65R110CFDAFKSA1 [INFINEON]
Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3;
| 型号： | IPW65R110CFDAFKSA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 |
| 文件： | 总16页 (文件大小：2324K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CFDA Automotive
650V CoolMOS™ CFDA Power Transistor
IPx65R110CFDA
Data Sheet
Rev. 2.0
Final
Automotive
650V CoolMOS™ CFDA Power Transistor
IPW65R110CFDA, IPB65R110CFDA
IPP65R110CFDA
TO-247
D²PAK
TO-220
1
Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle and
pioneered by Infineon Technologies. 650V CoolMOS™ CFDA series
combines the experience of the leading SJ MOSFET supplier with high
class innovation. The resulting devices provide all benefits of a fast
switching SJ MOSFET while offering an extremely fast and robust body
diode. This combination of extremely low switching, commutation and
conduction losses together with highest robustness make especially
resonant switching applications more reliable, more efficient, lighter, and
cooler.
drain
pin 2
gate
pin 1
Features
• Ultra-fast body diode
source
pin 3
• Very high commutation ruggedness
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Easy to use/drive
• Qualified according to AEC Q101
• Green package (RoHS compliant), Pb-free plating, halogen free for mold
compound
Applications
650V CoolMOS™ CFDA is designed for switching applications.
Table 1 Key Performance Parameters
Parameter
Value
650
0.11
118
99.6
9.2
Unit
V‡»
V
RDS(on),max
Qg,typ
Â
nC
A
ID,pulse
Eoss @ 400V
Body diode di/dt
Qrr
µJ
A/µs
µC
ns
A
900
0.8
trr
150
8.3
Irrm
Type / Ordering Code
IPW65R110CFDA
IPB65R110CFDA
IPP65R110CFDA
Package
Marking
Related Links
-
PG-TO 247
PG-TO 263
PG-TO 220
65F6110A
Final Data Sheet
Rev. 2.0, 2012-03-28
2
650V CoolMOS™ CFDA Power Transistor
IPW65R110CFDA, IPB65R110CFDA
IPP65R110CFDA
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Final Data Sheet
Rev. 2.0, 2012-03-28
3
650V CoolMOS™ CFDA Power Transistor
IPW65R110CFDA, IPB65R110CFDA
IPP65R110CFDA
2
Maximum ratings
at TÎ = 25°C, unless otherwise specified
Table 2 Maximum ratings
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Continuous drain current1)
I ‡
31.2
19.7
99.6
A
T† = 25°C
T† = 100°C
T† = 25°C
Pulsed drain current2)
I ‡‚ÔÛÐÙþ
Eƒ»
A
I ‡ = 6.2A, V‡‡ = 50V
(see table 19)
Avalanche energy, single pulse
845
mJ
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
Eƒ¸
I ƒ¸
dv/dt
V•»
1.3
6.2
50
20
30
mJ I ‡ = 6.2A, V‡‡ = 50V
A
V/ns V‡» = 0 ... 400V
-20
-30
V
static
AC (f > 1 Hz)
Power dissipation (non FullPAK, SMD)
TO-247, TO-220, D²PAK
PÚÓÚ
277.8 W
T† = 25°C
Operating and storage temperature
T΂TÙÚÃ
-40
150
60
°C
Ncm M3 and M3.5 screws
Mounting torque (non FullPAK)
TO-247, TO-220
Continuous diode forward current
Diode pulse current
I »
31.2
99.6
A
A
T† = 25°C
T† = 25°C
I »‚ÔÛÐÙþ
V‡» = 0 ... 400V, I »‡ ù I ‡,
TÎ = 25°C
(see table 17)
Reverse diode dv/dt3)
dv/dt
diË/dt
50
V/ns
A/µs
Maximum diode commutation speed
900
1) Limited by TÎ ÑÈà.
2) Pulse width tÔ limited by TÎ ÑÈà
3) Identical low side and high side switch with identical R•
Final Data Sheet
Rev. 2.0, 2012-03-28
4
650V CoolMOS™ CFDA Power Transistor
IPW65R110CFDA, IPB65R110CFDA
IPP65R110CFDA
3
Thermal characteristics
Table 3 Thermal characteristics TO-247, TO-220
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Thermal resistance, junction - case
Thermal resistance, junction - ambient
RÚÌœ†
RÚÌœƒ
0.45 K/W
62
K/W leaded
Soldering temperature, wavesoldering only
allowed at leads
1.6 mm (0.063 in.) from case for
10s
TÙÓÐÁ
260
°C
Table 4 Thermal characteristics D²PAK
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Thermal resistance, junction - case
RÚÌœ†
RÚÌœƒ
0.45 K/W
SMD version, device on PCB,
minimal footprint
Thermal resistance, junction - ambient1)
62
K/W
°C
SMD version, device on PCB,
6cm² cooling area
35
Soldering temperature, wave- &
reflowsoldering allowed
TÙÓÐÁ
260
reflow MSL
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection.
PCB is vertical without air stream cooling.
Final Data Sheet
Rev. 2.0, 2012-03-28
5
650V CoolMOS™ CFDA Power Transistor
IPW65R110CFDA, IPB65R110CFDA
IPP65R110CFDA
4
Electrical characteristics
at TÎ = 25°C, unless otherwise specified
Table 5 Static characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Drain-source breakdown voltage1)
Gate threshold voltage
Vñ…¸ò‡»» 650
V
V•» = 0V, I ‡ = 1mA
V•»ñÚÌò
I ‡»»
3.5
4
4.5
1.5
V
V‡» = V•», I ‡ = 1.3mA
V‡» = 650V, V•» = 0V, TÎ = 25°C
Zero gate voltage drain current
µA
V‡» = 650V, V•» = 0V,
TÎ = 150°C
400
Gate-source leakage current
I •»»
100
nA
Â
V•» = 20V, V‡» = 0V
Drain-source on-state resistance
R‡»ñÓÒò
0.099 0.11
0.257
V•» = 10V, I ‡ = 12.7A, TÎ = 25°C
V•» = 10V, I ‡ = 12.7A,
TÎ = 150°C
Gate resistance
R•
1.3
Â
f = 1MHz, open drain
Table 6 Dynamic characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Input capacitance
CÍÙÙ
3240
160
pF
pF
V•» = 0V, V‡» = 100V, f = 1MHz
Output capacitance
CÓÙÙ
Effective output capacitance, energy
related2)
CÓñþØò
120
553
pF
pF
V•» = 0V, V‡» = 0 ... 400V
I ‡ = constant, V•» = 0V,
V‡» = 0 ... 400V
Effective output capacitance, time related3) CÓñÚØò
Turn-on delay time
Rise time
tÁñÓÒò
tØ
16
11
68
6
ns
ns
ns
ns
V‡‡ = 400V, V•» = 13V,
I ‡ = 19.1A, R• = 1.8Â
(see table 18)
Turn-off delay time
Fall time
tÁñÓËËò
tË
Table 7 Gate charge characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Gate to source charge
Gate to drain charge
Gate charge total
QÃÙ
21
nC
nC
nC
V
V‡‡ = 480V, I ‡ = 19.1A,
V•» = 0 to 10V
QÃÁ
64
QÃ
118
6.4
Gate plateau voltage
VÔÐÈÚþÈÛ
1) For applications with applied blocking voltage > 65% of the specified blocking voltage, we recommend to
evaluate the impact of the cosmic radiation effect in early design phase. For assessment please contact local
Infineon sales office.
2) CÓñþØò is a fixed capacitance that gives the same stored energy as CÓÙÙ while V‡» is rising from 0 to 400V
3) CÓñÚØò is a fixed capacitance that gives the same charging time as CÓÙÙ while V‡» is rising from 0 to 400V
Final Data Sheet
Rev. 2.0, 2012-03-28
6
650V CoolMOS™ CFDA Power Transistor
IPW65R110CFDA, IPB65R110CFDA
IPP65R110CFDA
Table 8 Reverse diode characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min. Typ. Max.
Diode forward voltage
V»‡
tØØ
0.9
150
0.8
8.3
V
V•» = 0V, I Œ = 19.1A, TÎ = 25°C
Reverse recovery time
ns
µC
A
V¸ = 400V, I Œ = 19.1A,
di Œ/dt = 100A/µs
(see table 17)
Reverse recovery charge
Peak reverse recovery current
QØØ
I ØØÑ
Final Data Sheet
Rev. 2.0, 2012-03-28
7
650V CoolMOS™ CFDA Power Transistor
IPW65R110CFDA, IPB65R110CFDA
IPP65R110CFDA
5
Electrical characteristics diagrams
Table 9
Power dissipation
Max. transient thermal impedance
300
101
250
200
150
100
0.5
0.2
0.1
P
P
P
P
Z
Z
Z
Z
0.05
100
50
0
10-1
0.02
0.01
single pulse
10-2
0
40
80
TC [°C]
120
160
10-5
10-4
10-3
tp [s]
10-2
10-1
Ptot=f(TC)
ZthJC =f(tP); parameter: D=tp/T
Table 10
Typ. output characteristics
Typ. output characteristics
120
80
20 V
20 V
10 V
10 V
70
100
8 V
8 V
60
7 V
7 V
80
60
40
20
0
6 V
5.5 V
5 V
6 V
50
5.5 V
5 V
40
I
I
I
I
II
II
4.5 V
4.5 V
30
20
10
0
0
5
10
VDS [V]
15
20
0
5
10
VDS [V]
15
20
I D=f(VDS); Tj=25 °C; parameter: VGS
Final Data Sheet
I D=f(VDS); Tj=125 °C; parameter: VGS
Rev. 2.0, 2012-03-28
8
650V CoolMOS™ CFDA Power Transistor
IPW65R110CFDA, IPB65R110CFDA
IPP65R110CFDA
Table 11
Typ. drain-source on-state resistance
Typ. drain-source on-state resistance
0.40
0.30
0.25
0.20
0.15
0.30
0.20
5 V
5.5 V
6 V
R
R
R
R
RR
RR
6.5 V
7 V
0.10
0.05
0.00
0.10
0.00
10 V
0
10
20
I D [A]
30
40
-40
0
40
80
120
160
Tj [°C]
RDS(on)=f(I D); Tj=125 °C; parameter: VGS
RDS(on)=f(Tj); I D=18.1 A; VGS=10 V
Table 12
Typ. transfer characteristics
Safe operating area
120
103
150 °C
1 µs
25 °C
10 µs
100
100 µs
102
1 ms
80
60
10 ms
101
DC
I
I
I
I
II
II
100
10-1
10-2
40
20
0
0
2
4
6
8
10
100
101
102
103
VGS [V]
VDS [V]
I D=f(VGS); |VDS|>2|I D|RDS(on)max; parameter: Tj
I D=f(VDS); TC=25 °C; D=0; parameter: tp
Final Data Sheet
Rev. 2.0, 2012-03-28
9
650V CoolMOS™ CFDA Power Transistor
IPW65R110CFDA, IPB65R110CFDA
IPP65R110CFDA
Table 13
Safe operating area
Typ. gate charge
102
10
1 µs
9
10 µs
100 µs
8
120 V
101
1 ms
7
480 V
10 ms
DC
6
5
100
I
I
I
I
V
V
V
V
4
3
2
1
0
10-1
10-2
100
101
102
103
0
50
100
150
VDS [V]
Qgate [nC]
I D=f(VDS); TC=80 °C; D=0; parameter: tp
VGS=f(Qgate); I D=19.2 A pulsed; parameter: VDD
Table 14
Typ. forward characteristics of reverse diode
Avalanche energy
102
900
125 °C
800
700
600
500
400
25 °C
101
I
I
I
I
E
E
E
E
100
300
200
100
0
10-1
0.0
0.5
1.0
1.5
25
75
125
VSD [V]
Tj [°C]
I F=f(VSD); parameter: Tj
EAS=f(Tj); I D=6.6 A; VDD=50 V
Final Data Sheet
Rev. 2.0, 2012-03-28
10
650V CoolMOS™ CFDA Power Transistor
IPW65R110CFDA, IPB65R110CFDA
IPP65R110CFDA
Table 15
Drain-source breakdown voltage
Typ. capacitances
760
104
Ciss
740
720
700
680
660
640
Coss
Crss
103
102
C
C
C
C
V
V
V
V
620
600
580
560
540
101
100
-40
0
40
80
120
0
100
200
300
VDS [V]
400
500
600
Tj [°C]
VBR(DSS)=f(Tj); I D=0.25 mA
C=f(VDS); VGS=0 V; f=1 MHz
Table 16
Typ. Coss stored energy
18
16
14
12
10
8
E
E
E
E
6
4
2
0
0
100
200
300
VDS [V]
400
500
600
Eoss=f(VDS
)
Final Data Sheet
Rev. 2.0, 2012-03-28
11
650V CoolMOS™ CFDA Power Transistor
IPW65R110CFDA, IPB65R110CFDA
IPP65R110CFDA
6
Test Circuits
Table 17 Diode characteristics
Test circuit for diode characteristics
Diode recovery waveform
ID
RG1
VDS
RG2
RG1 = RG2
Table 18 Switching times
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
10%
VGS
td(off)
tf
td(on)
ton
tr
toff
Table 19 Unclamped inductive
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
VD
ID
VDS
VDS
VDS
ID
Final Data Sheet
Rev. 2.0, 2012-03-28
12
650V CoolMOS™ CFDA Power Transistor
IPW65R110CFDA, IPB65R110CFDA
IPP65R110CFDA
7
Package Outlines
Figure 1 Outline PG-TO 247, dimensions in mm/inches
Final Data Sheet
Rev. 2.0, 2012-03-28
13
650V CoolMOS™ CFDA Power Transistor
IPW65R110CFDA, IPB65R110CFDA
IPP65R110CFDA
Figure 2 Outline PG-TO 263, dimensions in mm/inches
Final Data Sheet
Rev. 2.0, 2012-03-28
14
650V CoolMOS™ CFDA Power Transistor
IPW65R110CFDA, IPB65R110CFDA
IPP65R110CFDA
Figure 3 Outline PG-TO 220, dimensions in mm/inches
Final Data Sheet
Rev. 2.0, 2012-03-28
15
650V CoolMOS™ CFDA Power Transistor
IPW65R110CFDA, IPB65R110CFDA
IPP65R110CFDA
Revision History
IPW65R110CFDA, IPB65R110CFDA, IPP65R110CFDA
Revision: 2012-03-28, Rev. 2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Final datasheet
2012-03-28
Disclaimer ATV
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to
continuously improve the quality of this document. Please send your proposal (including a reference to this document) to:
erratum@infineon.com
Edition 2011-09-30
Published by
Infineon Technologies AG
81726 München, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (
).
www.infineon.com
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
Rev. 2.0, 2012-03-28
16
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